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    • 1. 发明授权
    • Method for fabricating a cylindrical capacitor
    • 圆柱形电容器的制造方法
    • US6066541A
    • 2000-05-23
    • US66566
    • 1998-04-27
    • Ming-Teng HsiehTsu-An LinPei-Ying LeeHsing-Chuan Tsai
    • Ming-Teng HsiehTsu-An LinPei-Ying LeeHsing-Chuan Tsai
    • H01L21/02H01L21/8242H01L21/20
    • H01L27/10852H01L28/82
    • A method for fabricating a cylindrical capacitor is provided. This invention uses a composite structure composed of stacked barrier/scarificing/mask layers to prevent the contact plug of the capacitor from being attacked by wet etchants. An insulating layer is formed over a substrate having a source region, a drain region, and a gate electrode. Then a barrier layer, a sacrificing layer and a mask layer are sequentially formed over the insulating layer. Next, a contact hole is formed over the source region and spacers are formed on the sidewalls of the contact hole. After a storage electrode of the capacitor is formed and exposed portions of the mask layer are removed, the sacrificing layer is isotropically etched using the spacers and the barrier layer as stopping layers. Thereafter, a capacitor dielectric layer and an opposite electrode are formed over the storage electrode thereby completing the capacitor.
    • 提供一种制造圆柱形电容器的方法。 本发明使用由堆叠的阻挡/清除/掩模层组成的复合结构,以防止电容器的接触塞被湿蚀刻剂侵蚀。 在具有源极区域,漏极区域和栅极电极的衬底上形成绝缘层。 然后在绝缘层上依次形成阻挡层,牺牲层和掩模层。 接下来,在源极区域上形成接触孔,并且在接触孔的侧壁上形成间隔物。 在形成电容器的存储电极并且去除掩模层的暴露部分之后,使用间隔物和阻挡层作为停止层进行各向同性蚀刻。 此后,在存储电极上形成电容器电介质层和相对电极,从而完成电容器。