会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Method for fabricating a DRAM capacitor
    • 制造DRAM电容器的方法
    • US6133089A
    • 2000-10-17
    • US314201
    • 1999-05-19
    • Tse Yao HuangShih-Chi HsuYinan ChenHsing-Chuan Tsai
    • Tse Yao HuangShih-Chi HsuYinan ChenHsing-Chuan Tsai
    • H01L21/02H01L21/8242
    • H01L28/91H01L27/10852
    • A method for fabricating a DRAM capacitor is described. First, a semiconductor substrate having a capacitor contact is provided. Next, a first polysilicon layer is formed. Then, an oxide layer and a silicon oxy-nitride layer are sequentially formed over the first polysilicon layer. Next, the silicon oxy-nitride layer, the oxide layer, and the first polysilicon layer are selectively etched to leave a rectangular stack layer. Afterwards, the oxide layer and the first polysilicon layer of the rectangular stack layer are etched from the sidewall direction to leave a double T-shaped stack layer. Then, second polysilicon layer is formed on the upper surface and the sidewall of the double T-shaped stack layer. Next, the second polysilicon layer is selectively removed. The remaining second and first polysilicon layer are used as the bottom electrode. Afterwards, a dielectric layer and an upper electrode are formed on the bottom electrode.
    • 描述制造DRAM电容器的方法。 首先,提供具有电容器触点的半导体衬底。 接下来,形成第一多晶硅层。 然后,在第一多晶硅层上依次形成氧化物层和氮氧化硅层。 接下来,选择性地蚀刻硅氮氧化物层,氧化物层和第一多晶硅层以留下矩形堆叠层。 然后,从侧壁方向蚀刻矩形堆叠层的氧化物层和第一多晶硅层,留下双T型堆叠层。 然后,在双T型堆叠层的上表面和侧壁上形成第二多晶硅层。 接下来,选择性地去除第二多晶硅层。 剩余的第二和第一多晶硅层用作底部电极。 之后,在底部电极上形成电介质层和上部电极。
    • 2. 发明授权
    • Method for fabricating a cylindrical capacitor
    • 圆柱形电容器的制造方法
    • US6066541A
    • 2000-05-23
    • US66566
    • 1998-04-27
    • Ming-Teng HsiehTsu-An LinPei-Ying LeeHsing-Chuan Tsai
    • Ming-Teng HsiehTsu-An LinPei-Ying LeeHsing-Chuan Tsai
    • H01L21/02H01L21/8242H01L21/20
    • H01L27/10852H01L28/82
    • A method for fabricating a cylindrical capacitor is provided. This invention uses a composite structure composed of stacked barrier/scarificing/mask layers to prevent the contact plug of the capacitor from being attacked by wet etchants. An insulating layer is formed over a substrate having a source region, a drain region, and a gate electrode. Then a barrier layer, a sacrificing layer and a mask layer are sequentially formed over the insulating layer. Next, a contact hole is formed over the source region and spacers are formed on the sidewalls of the contact hole. After a storage electrode of the capacitor is formed and exposed portions of the mask layer are removed, the sacrificing layer is isotropically etched using the spacers and the barrier layer as stopping layers. Thereafter, a capacitor dielectric layer and an opposite electrode are formed over the storage electrode thereby completing the capacitor.
    • 提供一种制造圆柱形电容器的方法。 本发明使用由堆叠的阻挡/清除/掩模层组成的复合结构,以防止电容器的接触塞被湿蚀刻剂侵蚀。 在具有源极区域,漏极区域和栅极电极的衬底上形成绝缘层。 然后在绝缘层上依次形成阻挡层,牺牲层和掩模层。 接下来,在源极区域上形成接触孔,并且在接触孔的侧壁上形成间隔物。 在形成电容器的存储电极并且去除掩模层的暴露部分之后,使用间隔物和阻挡层作为停止层进行各向同性蚀刻。 此后,在存储电极上形成电容器电介质层和相对电极,从而完成电容器。