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1. 发明授权

US06303907B1 Radiant chamber and method for lid seal in ceramic packaging 有权
标题翻译：陶瓷包装中的盖子密封的辐射室和方法
公开(公告)号：US06303907B1
公开(公告)日：2001-10-16
申请号：US09585054
申请日：2000-06-01
申请人： Ming-Jang Hwang , Kevin Dennis , Steve K. Groothuis
发明人： Ming-Jang Hwang , Kevin Dennis , Steve K. Groothuis
IPC分类号： F27D1102
CPC分类号： H01L21/67126 , H01L2224/48091 , H01L2224/48472 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： In integrated semiconductor manufacturing, semiconductor dies may be packaged in ceramic packages. Such packages typically have a base into which the semiconductor die is placed and typically have a lid which seals the package. A halagen lamp radiant chamber significantly reduces the time it takes to seal the package.
摘要翻译：在集成半导体制造中，半导体管芯可以封装在陶瓷封装中。这样的封装通常具有放置半导体管芯的基底，并且通常具有密封封装的盖子。卤素灯辐射室显着缩短了密封包装所需的时间。

2. 发明授权

US08088659B2 Method of forming capacitors 有权
标题翻译：形成电容器的方法
公开(公告)号：US08088659B2
公开(公告)日：2012-01-03
申请号：US12769306
申请日：2010-04-28
申请人： Jiong-Ping Lu , Ming-Jang Hwang
发明人： Jiong-Ping Lu , Ming-Jang Hwang
IPC分类号： H01L21/8242
CPC分类号： C23C16/34 , C23C16/56 , H01L21/31604 , H01L21/31637 , H01L21/31683 , H01L27/1085 , H01L28/40 , H01L28/57
摘要： High dielectric films of mixed transition metal oxides of titanium and tungsten, or titanium and tantalum, are formed by sequential chemical vapor deposition (CVD) of the respective nitrides and annealing in the presence of oxygen to densify and oxidize the nitrides. The resulting film is useful as a capacitative cell and resists oxygen diffusion to the underlying material, has high capacitance and low current leakage.
摘要翻译：通过相应氮化物的顺序化学气相沉积（CVD）形成钛和钨或钛和钽的混合过渡金属氧化物的高介电膜，并在氧的存在下退火以致密化和氧化氮化物。所得到的膜可用作电容性电池并且抵抗向下层材料的氧扩散，具有高电容和低电流泄漏。

3. 发明授权

US07544987B2 High-k dielectric materials and processes for manufacturing them 有权
公开(公告)号：US07544987B2
公开(公告)日：2009-06-09
申请号：US11070415
申请日：2005-03-02
申请人： Jiong-Ping Lu , Ming-Jang Hwang
发明人： Jiong-Ping Lu , Ming-Jang Hwang
IPC分类号： H01L27/108
CPC分类号： C23C16/34 , C23C16/56 , H01L21/31604 , H01L21/31637 , H01L21/31683 , H01L27/1085 , H01L28/40 , H01L28/57
摘要： High dielectric films of mixed transition metal oxides of titanium and tungsten, or titanium and tantalum, are formed by sequential chemical vapor deposition (CVD) of the respective nitrides and annealing in the presence of oxygen to densify and oxidize the nitrides. The resulting film is useful as a capacitative cell and resists oxygen diffusion to the underlying material, has high capacitance and low current leakage.

4. 发明授权

US06641867B1 Methods for chemical vapor deposition of tungsten on silicon or dielectric 有权
标题翻译：在硅或电介质上钨化学气相沉积的方法
公开(公告)号：US06641867B1
公开(公告)日：2003-11-04
申请号：US09276043
申请日：1999-03-25
申请人： Wei-Yung Hsu , Jiong-Ping Lu , August J. Fischer , Ming-Jang Hwang
发明人： Wei-Yung Hsu , Jiong-Ping Lu , August J. Fischer , Ming-Jang Hwang
IPC分类号： B05D512
CPC分类号： H01L21/76843 , C23C16/08 , H01L21/28061 , H01L21/28556 , H01L21/32051 , H01L21/76856 , H01L21/76876 , H01L21/76877
摘要： In situ nitridation of a thin layer of either silicon or tungsten provides an adhesive layer for bulk deposition of tungsten. Alternatively, a thin layer of silicon can be deposited directly on a dielectric, then reacted with WF6 to replace the silicon with tungsten, which provides a nucleation layer for bulk tungsten deposition.
摘要翻译：硅或钨的薄层的原位氮化提供了用于钨的体积沉积的粘合剂层。或者，可以将薄的硅层沉积在电介质上，然后与WF6反应以用钨代替硅，其提供用于体钨沉积的成核层。

5. 发明授权

US06559050B1 Process for high thermal stable contact formation in manufacturing sub-quarter-micron CMOS devices 有权
标题翻译：制造亚微米级CMOS器件的高热稳定接触形成工艺
公开(公告)号：US06559050B1
公开(公告)日：2003-05-06
申请号：US09691907
申请日：2000-10-19
申请人： William R. McKee , Jiong-Ping Lu , Ming-Jang Hwang , Dirk N. Anderson , Wei Lee
发明人： William R. McKee , Jiong-Ping Lu , Ming-Jang Hwang , Dirk N. Anderson , Wei Lee
IPC分类号： H01L2144
CPC分类号： H01L21/76843 , H01L21/76855 , H01L21/76856 , H01L21/76867
摘要： A conducting plug/contact structure for use with integrated circuit includes a tungsten conducting plug formed in the via with a tungsten-silicon-nitride (WSiYNZ) region providing the interface between the tungsten conducting plug and the substrate (silicon) layer. The interface region is formed providing a nitrided surface layer over the exposed dielectric surfaces and the exposed substrate surface (i.e., exposed by a via in the dielectric layer) prior to the formation of tungsten/tungsten nitride layer filling the via. The structure is annealed forming a tungsten conducting plug with a tungsten-silicon-nitride interface between the conducting plug and the substrate. According to another embodiment, a tungsten nitride surface layer is formed over the nitrided surface layer prior to the formation of a tungsten layer to fill the via. According to another embodiment, a silicon surface layer is applied to the exposed surface of the dielectric layer and to the exposed surface of the substrate prior to formation of the nitrided surface layer. A layer of tungsten, tungsten/tungsten nitride, or tungsten nitride is formed to fill the via. After annealing, a tungsten conducting plug is formed with a tungsten-silicon-nitride interface region with the substrate.
摘要翻译：与集成电路一起使用的导电插头/接触结构包括形成在通孔中的钨导电插塞，其中钨硅氮化物（WSiYNZ）区域提供钨导电插塞和衬底（硅）层之间的界面。在形成填充通孔的钨/氮化钨层之前，形成界面区域，在暴露的电介质表面和暴露的衬底表面上（即，通过电介质层中的通孔暴露）提供氮化表面层。该结构退火形成导电插塞和基板之间的钨 - 氮化硅界面的钨导电塞。根据另一个实施例，在形成钨层以填充通孔之前，氮化表面层上形成氮化钨表面层。根据另一实施例，在形成氮化表面层之前，将硅表面层施加到介电层的暴露表面和衬底的暴露表面。形成一层钨，钨/氮化钨或氮化钨以填充通孔。在退火之后，形成具有与基板的钨 - 氮化硅界面区域的钨导电塞。

6. 发明授权

US06861695B2 High-k dielectric materials and processes for manufacturing them 有权
标题翻译：高k电介质材料及其制造方法
公开(公告)号：US06861695B2
公开(公告)日：2005-03-01
申请号：US10190428
申请日：2002-07-03
申请人： Jiong-Ping Lu , Ming-Jang Hwang
发明人： Jiong-Ping Lu , Ming-Jang Hwang
IPC分类号： H01L21/02 , H01L21/316 , H01L21/8242 , H01L27/108
CPC分类号： C23C16/34 , C23C16/56 , H01L21/31604 , H01L21/31637 , H01L21/31683 , H01L27/1085 , H01L28/40 , H01L28/57
摘要： High dielectric films of mixed transition metal oxides of titanium and tungsten, or titanium and tantalum, are formed by sequential chemical vapor deposition (CVD) of the respective nitrides and annealing in the presence of oxygen to densify and oxidize the nitrides. The resulting film is useful as a capacitative cell and resists oxygen diffusion to the underlying material, has high capacitance and low current leakage.
摘要翻译：通过相应氮化物的顺序化学气相沉积（CVD）形成钛和钨或钛和钽的混合过渡金属氧化物的高介电膜，并在氧的存在下退火以致密化和氧化氮化物。所得到的膜可用作电容性电池并且抵抗向下层材料的氧扩散，具有高电容和低电流泄漏。

7. 发明授权

US06350311B1 Method for forming an epitaxial silicon-germanium layer 有权
标题翻译：用于形成外延硅 - 锗层的方法
公开(公告)号：US06350311B1
公开(公告)日：2002-02-26
申请号：US09515017
申请日：2000-02-29
申请人： Albert Feng-Der Chin , Ming-Jang Hwang
发明人： Albert Feng-Der Chin , Ming-Jang Hwang
IPC分类号： C30B110
CPC分类号： H01L21/28255 , C30B25/02 , C30B29/08 , C30B29/52 , H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/02631 , H01L21/02658 , H01L29/1054
摘要： A method for growing an epitaxial silicon-germanium layer is described. The method includes removing a native oxide layer on the silicon substrate surface. A HF vapor treatment process is then conducted on the silicon substrate. Thereafter, a germanium layer is formed on the silicon substrate, followed by performing a rapid thermal anneal process under an inert gas to form a silicon-germanium alloy layer on the surface of the silicon substrate.
摘要翻译：描述了用于生长外延硅 - 锗层的方法。该方法包括去除硅衬底表面上的自然氧化物层。然后在硅衬底上进行HF蒸气处理工艺。此后，在硅衬底上形成锗层，然后在惰性气体下进行快速热退火工艺，以在硅衬底的表面上形成硅 - 锗合金层。

8. 发明申请

US20100227450A1 NOVEL HIGH-K DIELECTRIC MATERIALS AND PROCESSES FOR MANUFACTURING THEM 有权
标题翻译：新型高K电介质材料及其制造工艺
公开(公告)号：US20100227450A1
公开(公告)日：2010-09-09
申请号：US12769306
申请日：2010-04-28
申请人： Jiong-Ping Lu , Ming-Jang Hwang
发明人： Jiong-Ping Lu , Ming-Jang Hwang
IPC分类号： H01L21/02
CPC分类号： C23C16/34 , C23C16/56 , H01L21/31604 , H01L21/31637 , H01L21/31683 , H01L27/1085 , H01L28/40 , H01L28/57
摘要： High dielectric films of mixed transition metal oxides of titanium and tungsten, or titanium and tantalum, are formed by sequential chemical vapor deposition (CVD) of the respective nitrides and annealing in the presence of oxygen to densify and oxidize the nitrides. The resulting film is useful as a capacitative cell and resists oxygen diffusion to the underlying material, has high capacitance and low current leakage.
摘要翻译：通过相应氮化物的顺序化学气相沉积（CVD）形成钛和钨或钛和钽的混合过渡金属氧化物的高介电膜，并在氧的存在下退火以致密化和氧化氮化物。所得到的膜可用作电容性电池并且抵抗向下层材料的氧扩散，具有高电容和低电流泄漏。

9. 发明申请

US20060270148A1 Novel high-k dielectric materials and processes for manufacturing them 有权
公开(公告)号：US20060270148A1
公开(公告)日：2006-11-30
申请号：US11499308
申请日：2006-08-03
申请人： Jiong-Ping Lu , Ming-Jang Hwang
发明人： Jiong-Ping Lu , Ming-Jang Hwang
IPC分类号： H01L21/473 , H01L21/8242
CPC分类号： C23C16/34 , C23C16/56 , H01L21/31604 , H01L21/31637 , H01L21/31683 , H01L27/1085 , H01L28/40 , H01L28/57
摘要： High dielectric films of mixed transition metal oxides of titanium and tungsten, or titanium and tantalum, are formed by sequential chemical vapor deposition (CVD) of the respective nitrides and annealing in the presence of oxygen to densify and oxidize the nitrides. The resulting film is useful as a capacitative cell and resists oxygen diffusion to the underlying material, has high capacitance and low current leakage.

10. 发明授权

US06365517B1 Process for depositing thin films containing titanium and nitrogen 失效
标题翻译：用于沉积含有钛和氮的薄膜的方法
公开(公告)号：US06365517B1
公开(公告)日：2002-04-02
申请号：US09010373
申请日：1998-01-21
申请人： Jiong-Ping Lu , Ming-Jang Hwang
发明人： Jiong-Ping Lu , Ming-Jang Hwang
IPC分类号： H01L21443
CPC分类号： H01L21/76843 , C23C16/30 , C23C16/34 , C23C16/56 , H01L21/28061 , H01L21/28556 , H01L21/76856 , H01L27/1085 , H01L28/75 , H01L28/82 , H01L28/90
摘要： An embodiment of the instant invention is a method of depositing a TiN-based film over a semiconductor wafer, the method comprising the steps of: substantially simultaneously subjecting the semiconductor wafer to TiCl4, H2, and N2; and subjecting the semiconductor wafer to a plasma, such that the combination of the TiCl4, H2, and N2 and the plasma cause the deposition of a TiN based film to form over the semiconductor wafer. Another embodiment of the instant invention involves additionally subjecting the semiconductor wafer to SiH4 so as to form a TiSixNy film over the semiconductor wafer. Another embodiment of the instant invention involves additionally subjecting the semiconductor wafer to B2H6 so as to form a TiNxBy layer over the semiconductor wafer.
摘要翻译：本发明的一个实施方案是在半导体晶片上沉积TiN基膜的方法，该方法包括以下步骤：基本上同时使半导体晶片经历TiCl 4，H 2和N 2; 并且使半导体晶片经受等离子体，使得TiCl 4，H 2和N 2与等离子体的组合导致在半导体晶片上形成TiN基膜的沉积。本发明的另一实施例涉及另外对半导体晶片进行SiH4的处理，以便在半导体晶片上形成TiSixNy膜。本发明的另一实施例涉及另外对半导体晶片进行B2H6的处理，以在半导体晶片上形成TiNxBy层。

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