专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06399922B2 Single-substrate-heat-treating apparatus for semiconductor process system 失效
标题翻译：用于半导体工艺系统的单基板热处理装置
公开(公告)号：US06399922B2
公开(公告)日：2002-06-04
申请号：US09777875
申请日：2001-02-07
申请人： Wataru Okase , Masaaki Hasei
发明人： Wataru Okase , Masaaki Hasei
IPC分类号： F27D1102
CPC分类号： C23C14/083 , C23C16/56
摘要： A heat-treating apparatus is arranged to perform a reforming process and a crystallizing process for tantalum oxide deposited on a semiconductor wafer. The apparatus includes a worktable with a heater incorporated therein. Under the worktable, there is a heat-compensating member formed of a thin plate and having a counter surface facing the bottom surface of the worktable along the periphery. The counter surface is formed of a mirror surface having a surface roughness of Rmax=25 &mgr;m or less. Heat rays and radiant heat are reflected by the counter surface and applied to the periphery of the worktable, thereby compensating the periphery for heat loss.
摘要翻译：热处理装置被布置成对沉积在半导体晶片上的氧化钽进行重整处理和结晶处理。该装置包括其中结合有加热器的工作台。在工作台下方有一个由薄板形成的热补偿部件，其沿着周边具有面向工作台的底面的相对表面。反面由Rmax =25μm或更小的表面粗糙度的镜面形成。热射线和辐射热被相对表面反射并施加到工作台的周边，从而补偿周边的热损失。

2. 发明授权

US06683281B2 Means and method for heating 有权
标题翻译：加热方法和方法
公开(公告)号：US06683281B2
公开(公告)日：2004-01-27
申请号：US10182981
申请日：2002-11-08
申请人： Mats Sundberg , Lars-Goran Johansson , Helena Johansson , Jan Andersson
发明人： Mats Sundberg , Lars-Goran Johansson , Helena Johansson , Jan Andersson
IPC分类号： F27D1102
CPC分类号： C21D1/34 , C21D9/0081 , F27B17/0016 , F27D11/02 , F27D2099/0008 , F27D2099/0011
摘要： The present invention is for a method for heating of blanks and other heating of metallic materials in a furnace before working where heat is transferred to a blank in the furnace by radiation. According to the method of the invention an important part of the radiation hits the walls of the furnace and are reflected there before it is transferred to the blank. Preferably the furnace is designed so that head radiation is reflected also at the bottom of the furnace. At least 50% of the radiation which reaches the blank ought to be reflected radiation. The invention is also for a furnace for heating of blanks and other comprising at least one furnace bottom part (1) and at least one furnace top part (4) having side walls (5, 6, 7, 8) where at least parts of the side walls of the top parts are inclined so that opposite walls are inclined towards each other.
摘要翻译：本发明涉及一种用于加热坯料的方法以及在加热之前的炉子中金属材料的其它加热方法，其中通过辐射将热量转移到炉中的坯料。根据本发明的方法，辐射的重要部分撞击炉壁，并在其被转移到坯料之前被反射。优选地，炉被设计成使得头部辐射也在炉底部被反射。到达空白的辐射的至少50％应该是反射辐射。本发明还涉及用于加热坯料和其它的炉子，其包括至少一个炉底部分（1）和至少一个具有侧壁（5,6,7,8）的炉顶部分（4），其中至少部分顶部的侧壁倾斜，使得相对的壁相对于彼此倾斜。

3. 发明授权

US06426486B1 Optical apparatus and method for shrinking heat shrink tubing, fusing wires and solder and unsolder packaged electronic components 有权
标题翻译：用于收缩热缩管的光学装置和方法，熔丝和焊料以及非电镀包装的电子部件
公开(公告)号：US06426486B1
公开(公告)日：2002-07-30
申请号：US09596254
申请日：2000-06-16
申请人： Stephen Bartok
发明人： Stephen Bartok
IPC分类号： F27D1102
CPC分类号： H01L21/67115 , B23K3/04 , B23K2101/40
摘要： Optical heat-generating apparatus and methods that rapidly, controllably deliver energy (heat) to heat shrink tubing disposed over wires or other components and that may be used to fuse insulated wires together, and solder and unsolder packaged IC chips. In general, the apparatus comprises a housing having one or more reflective cavities that each comprise a linear elliptical reflective surface having first and second focal lines, and into which the heatable component is inserted and disposed along the first focal line. One or more optical heat-generating elements are disposed along the second focal line of each respective linear elliptical reflective surface that emit energy that is focused by the one or more linear elliptical reflective surfaces onto the heatable component disposed along the first focal line. A number of different embodiments of the apparatus have been developed. Lengths of heat shrink tubing may be readily shrunk using various embodiments of the present invention in less than one second.
摘要翻译：光学发热装置和方法，其快速，可控地将能量（热）传递到设置在电线或其它部件上的热收缩管，并且可用于将绝缘电线熔合在一起，以及焊接和未焊接的封装IC芯片。通常，该装置包括具有一个或多个反射腔的壳体，每个反射腔包括具有第一和第二焦线的线性椭圆形反射表面，并且可加热部件沿着第一焦线插入并设置在该壳体中。一个或多个光学发热元件沿着每个相应的线性椭圆形反射表面的第二焦线设置，其发射由一个或多个线性椭圆形反射表面聚焦到沿着第一焦线设置的可加热部件上的能量。已经开发了该装置的许多不同实施例。热收缩管的长度可以在不到一秒的时间内使用本发明的各种实施例容易地收缩。

4. 发明授权

US06310327B1 Rapid thermal processing apparatus for processing semiconductor wafers 失效
标题翻译：用于处理半导体晶片的快速热处理装置
公开(公告)号：US06310327B1
公开(公告)日：2001-10-30
申请号：US09642973
申请日：2000-08-18
申请人： Gary M. Moore , Katsuhito Nishikawa
发明人： Gary M. Moore , Katsuhito Nishikawa
IPC分类号： F27D1102
CPC分类号： H01L21/68735 , C23C16/4404 , C23C16/4405 , C23C16/45565 , C23C16/45589 , C23C16/45591 , C23C16/4581 , C23C16/4585 , C23C16/4586 , C23C16/46 , C23C16/481 , C23C16/54 , C30B25/02 , C30B25/10 , C30B25/105 , C30B25/12 , C30B25/14 , C30B31/12 , C30B31/14 , H01L21/67115 , H01L21/6719 , H01L21/68764 , H01L21/68771 , H01L21/68785 , H05B3/0047
摘要： A novel rapid thermal process (RTP) reactor processes a multiplicity of wafers or a single large wafer, e.g., 200 mm (8 inches), 250 mm (10 inches), 300 mm (12 inches) diameter wafers, using either a single or dual heat source. The wafers or wafer are mounted on a rotatable susceptor supported by a susceptor support. A susceptor position control rotates the wafers during processing and raises and lowers the susceptor to various positions for loading and processing of wafers. A heat controller controls either a single heat source or a dual heat source that heats the wafers to a substantially uniform temperature during processing. A gas flow controller regulates flow of gases into the reaction chamber. Instead of the second heat source, a passive heat distribution is used, in one embodiment, to achieve a substantially uniform temperature throughout the wafers. Further, a novel susceptor is used that includes a silicon carbide cloth enclosed in quartz.
摘要翻译：一种新型的快速热处理（RTP）反应器使用单个或多个晶圆处理多个晶片或单个大晶片，例如200mm（8英寸），250mm（10英寸），300mm（12英寸）双重热源。晶片或晶片安装在由感受器支撑件支撑的可转动的基座上。基座位置控制在处理期间旋转晶片，并且将基座升高并降低到用于加载和处理晶片的各种位置。加热控制器控制单个热源或在加工期间将晶片加热至基本均匀的温度的双重热源。气流控制器调节进入反应室的气体流。代替第二热源，在一个实施例中，使用无源热分布来实现整个晶片的基本均匀的温度。此外，使用包含石英包裹的碳化硅布的新颖感受器。

5. 发明授权

US06173643B1 Multifunctional electric pressure cooker 失效
标题翻译：多功能电动压力锅
公开(公告)号：US06173643B1
公开(公告)日：2001-01-16
申请号：US09369356
申请日：1999-08-06
申请人： Anguo Qian , Chunde Tang
发明人： Anguo Qian , Chunde Tang
IPC分类号： F27D1102
CPC分类号： A47J27/0802 , A47J27/086
摘要： A multifunctional electric pressure cooker includes a pot cover, a turning handle, a pot body composed of an inner pot and an outer pot, a housing enveloping the whole pot and devices for controlling temperature, pressure and cooking duration. At the outer side of the pot cover is provided a hollow turning handle. Inside the handle are a lever mechanism and a button cam mechanism for forced pressure release and steam exhaust. When cooking, it is only necessary to turn an indicating cam on a cooking duration and temperature selecting panel. Fuzzy control to cooking will then be achieved.
摘要翻译：一种多功能电动压力锅，包括锅盖，转向手柄，由内锅和外锅组成的锅体，包围整个锅的壳体和用于控制温度，压力和烹饪持续时间的装置。在锅盖的外侧设置有中空的转动手柄。在手柄内部有一个杠杆机构和一个用于强制释放压力和蒸汽排放的纽扣凸轮机构。烹饪时，仅需要在烹饪时间和温度选择面板上转动指示凸轮。然后可以实现对烹饪的模糊控制。

6. 发明授权

US06696672B2 Heating lamp brackets for reaction chambers of evaporation coating machines 有权
标题翻译：蒸发涂布机反应室加热灯支架
公开(公告)号：US06696672B2
公开(公告)日：2004-02-24
申请号：US10029930
申请日：2001-12-31
申请人： Hung-Lin Ke , Hua-Jen Tseng , Chun-Chieh Lee , Muh-Lang Jang
发明人： Hung-Lin Ke , Hua-Jen Tseng , Chun-Chieh Lee , Muh-Lang Jang
IPC分类号： F27D1102
CPC分类号： H05B3/0033
摘要： A heating lamp bracket for reaction chambers of evaporation coating machines. The heating lamp bracket uses paired and insulation devices to mount heating lamps to a chamber wall of a reaction chamber. The bracket includes a mounting frame that has an insulation outer surface and a mounting outer face opposing to the insulation outer surface. The insulation outer surface has at least one insulation member located thereon for fastening the mounting frame to the chamber wall. The mounting outer surface has at least two independent mounting spots for connecting respectively a connection end of the corresponding heating lamp. The independent mounting spots and non-encased type insulation members of the present invention allows for the replacement of the heating lamps and defective insulation.
摘要翻译：一种用于蒸发涂布机反应室的加热灯支架。加热灯支架使用成对和绝缘装置将加热灯安装到反应室的室壁。支架包括具有绝缘外表面和与绝缘外表面相对的安装外表面的安装框架。绝缘外表面具有位于其上的至少一个绝缘构件，用于将安装框架紧固到室壁。安装外表面具有至少两个独立的安装点，用于分别连接相应加热灯的连接端。本发明的独立安装点和非封装型绝缘构件允许更换加热灯和有缺陷的绝缘。

7. 发明授权

US06670586B2 Infrared oven 失效
标题翻译：红外线烤箱
公开(公告)号：US06670586B2
公开(公告)日：2003-12-30
申请号：US10099147
申请日：2002-03-15
申请人： Mats O. Ingemanson , Robert H. LaPrad
发明人： Mats O. Ingemanson , Robert H. LaPrad
IPC分类号： F27D1102
CPC分类号： H05B1/0263 , H05B3/0076
摘要： The disclosed invention relates to an oven for cooking foodstuffs such as pizza by infrared radiation. The oven includes nichrome-quartz heating elements which are governed by a pulse type controller. The pulse type controller cause the heating elements to generate infrared radiation over selected time periods to efficiently cook a foodstuff.
摘要翻译：所公开的发明涉及一种用于通过红外辐射烹饪诸如比萨饼等食品的烤箱。烤箱包括由脉冲型控制器控制的镍铬铁石英加热元件。脉冲型控制器使得加热元件在选定的时间周期内产生红外辐射，以有效地烹饪食物。

8. 发明授权

US06303907B1 Radiant chamber and method for lid seal in ceramic packaging 有权
标题翻译：陶瓷包装中的盖子密封的辐射室和方法
公开(公告)号：US06303907B1
公开(公告)日：2001-10-16
申请号：US09585054
申请日：2000-06-01
申请人： Ming-Jang Hwang , Kevin Dennis , Steve K. Groothuis
发明人： Ming-Jang Hwang , Kevin Dennis , Steve K. Groothuis
IPC分类号： F27D1102
CPC分类号： H01L21/67126 , H01L2224/48091 , H01L2224/48472 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： In integrated semiconductor manufacturing, semiconductor dies may be packaged in ceramic packages. Such packages typically have a base into which the semiconductor die is placed and typically have a lid which seals the package. A halagen lamp radiant chamber significantly reduces the time it takes to seal the package.
摘要翻译：在集成半导体制造中，半导体管芯可以封装在陶瓷封装中。这样的封装通常具有放置半导体管芯的基底，并且通常具有密封封装的盖子。卤素灯辐射室显着缩短了密封包装所需的时间。

9. 发明授权

US06246029B1 High temperature semiconductor crystal growing furnace component cleaning method 失效
标题翻译：高温半导体晶体生长炉组件清洗方法
公开(公告)号：US06246029B1
公开(公告)日：2001-06-12
申请号：US09253815
申请日：1999-02-19
申请人： Kennard K. Addis
发明人： Kennard K. Addis
IPC分类号： F27D1102
CPC分类号： H01L21/67028 , C30B11/003 , C30B15/14 , F27B14/063 , F27B17/00 , F27D7/06 , F27D11/02 , F27D21/02 , H05B3/03 , Y10S438/905
摘要： A method is provided for cleaning deposits from a component of a semiconductor crystal growing furnace, where the furnace includes a hot zone and where the component is positioned outside the hot zone during the crystal growing process. The method typically includes providing the furnace including the component, removing the component from outside the hot zone, placing the component within the hot zone, and heating the hot zone to clean the component. The component may be virtually any furnace component, including a graphite chimney, purge tube, quartz window, or ceramic insulator.
摘要翻译：提供了一种用于从半导体晶体生长炉的部件清洗沉积物的方法，其中炉子包括热区，并且在晶体生长过程中该部件位于热区域的外部。该方法通常包括提供包括组件的炉，从热区外部去除组件，将组件放置在热区内，以及加热热区以清洁组件。该组件可以是几乎任何炉子部件，包括石墨烟囱，吹扫管，石英窗或陶瓷绝缘体。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式