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    • 8. 发明授权
    • Nitride semiconductor light emitting device with magnetic film
    • 氮化物半导体发光器件带磁性膜
    • US08536614B2
    • 2013-09-17
    • US13339388
    • 2011-12-29
    • Chih-Hao HsuRong XuanYu-Hsiang ChangJung-Chun HuangChun-Ying Chen
    • Chih-Hao HsuRong XuanYu-Hsiang ChangJung-Chun HuangChun-Ying Chen
    • H01L33/00
    • H01L33/38H01L33/14H01L33/22H01L33/40
    • A nitride semiconductor light emitting device including an n-type nitride semiconductor layer, a p-type nitride semiconductor layer, a light emitting semiconductor layer, a first metal pad, a second metal pad, and a first magnetic material layer is provided. The light emitting semiconductor layer is disposed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer. The first metal pad is electrically connected to the n-type nitride semiconductor layer. The second metal pad is electrically connected to the p-type nitride semiconductor layer. The first magnetic material layer is disposed between the first metal pad and the n-type nitride semiconductor layer. A distribution area of the first magnetic material layer parallel to a (0001) plane of the n-type nitride semiconductor layer is greater than or equal to an area of the first metal pad parallel to the (0001) plane.
    • 提供了包括n型氮化物半导体层,p型氮化物半导体层,发光半导体层,第一金属焊盘,第二金属焊盘和第一磁性材料层的氮化物半导体发光器件。 发光半导体层设置在n型氮化物半导体层和p型氮化物半导体层之间。 第一金属焊盘电连接到n型氮化物半导体层。 第二金属焊盘电连接到p型氮化物半导体层。 第一磁性材料层设置在第一金属焊盘和n型氮化物半导体层之间。 与n型氮化物半导体层的(0001)面平行的第一磁性体层的分布面积大于或等于平行于(0001)面的第一金属焊盘的面积。