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1. 发明授权

US08536614B2 Nitride semiconductor light emitting device with magnetic film 有权
标题翻译：氮化物半导体发光器件带磁性膜
公开(公告)号：US08536614B2
公开(公告)日：2013-09-17
申请号：US13339388
申请日：2011-12-29
申请人： Chih-Hao Hsu , Rong Xuan , Yu-Hsiang Chang , Jung-Chun Huang , Chun-Ying Chen
发明人： Chih-Hao Hsu , Rong Xuan , Yu-Hsiang Chang , Jung-Chun Huang , Chun-Ying Chen
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/14 , H01L33/22 , H01L33/40
摘要： A nitride semiconductor light emitting device including an n-type nitride semiconductor layer, a p-type nitride semiconductor layer, a light emitting semiconductor layer, a first metal pad, a second metal pad, and a first magnetic material layer is provided. The light emitting semiconductor layer is disposed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer. The first metal pad is electrically connected to the n-type nitride semiconductor layer. The second metal pad is electrically connected to the p-type nitride semiconductor layer. The first magnetic material layer is disposed between the first metal pad and the n-type nitride semiconductor layer. A distribution area of the first magnetic material layer parallel to a (0001) plane of the n-type nitride semiconductor layer is greater than or equal to an area of the first metal pad parallel to the (0001) plane.
摘要翻译：提供了包括n型氮化物半导体层，p型氮化物半导体层，发光半导体层，第一金属焊盘，第二金属焊盘和第一磁性材料层的氮化物半导体发光器件。发光半导体层设置在n型氮化物半导体层和p型氮化物半导体层之间。第一金属焊盘电连接到n型氮化物半导体层。第二金属焊盘电连接到p型氮化物半导体层。第一磁性材料层设置在第一金属焊盘和n型氮化物半导体层之间。与n型氮化物半导体层的（0001）面平行的第一磁性体层的分布面积大于或等于平行于（0001）面的第一金属焊盘的面积。

2. 发明申请

US20120098024A1 NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE WITH MAGNETIC FILM 有权
标题翻译：具有磁性膜的氮化物半导体发光器件
公开(公告)号：US20120098024A1
公开(公告)日：2012-04-26
申请号：US13339388
申请日：2011-12-29
申请人： Chih-Hao Hsu , Rong Xuan , Yu-Hsiang Chang , Jung-Chun Huang , Chun-Ying Chen
发明人： Chih-Hao Hsu , Rong Xuan , Yu-Hsiang Chang , Jung-Chun Huang , Chun-Ying Chen
IPC分类号： H01L33/62
CPC分类号： H01L33/38 , H01L33/14 , H01L33/22 , H01L33/40
摘要： A nitride semiconductor light emitting device including an n-type nitride semiconductor layer, a p-type nitride semiconductor layer, a light emitting semiconductor layer, a first metal pad, a second metal pad, and a first magnetic material layer is provided. The light emitting semiconductor layer is disposed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer. The first metal pad is electrically connected to the n-type nitride semiconductor layer. The second metal pad is electrically connected to the p-type nitride semiconductor layer. The first magnetic material layer is disposed between the first metal pad and the n-type nitride semiconductor layer. A distribution area of the first magnetic material layer parallel to a (0001) plane of the n-type nitride semiconductor layer is greater than or equal to an area of the first metal pad parallel to the (0001) plane.
摘要翻译：提供了包括n型氮化物半导体层，p型氮化物半导体层，发光半导体层，第一金属焊盘，第二金属焊盘和第一磁性材料层的氮化物半导体发光器件。发光半导体层设置在n型氮化物半导体层和p型氮化物半导体层之间。第一金属焊盘电连接到n型氮化物半导体层。第二金属焊盘电连接到p型氮化物半导体层。第一磁性材料层设置在第一金属焊盘和n型氮化物半导体层之间。与n型氮化物半导体层的（0001）面平行的第一磁性体层的分布面积大于或等于平行于（0001）面的第一金属焊盘的面积。

3. 外观设计

USD376438S Head lights of cars 失效
公开(公告)号：USD376438S
公开(公告)日：1996-12-10
申请号：US049965
申请日：1996-02-05
申请人： Jung-Chun Huang
设计人： Jung-Chun Huang

4. 外观设计

USD372995S Additional light for automobiles 失效
公开(公告)号：USD372995S
公开(公告)日：1996-08-20
申请号：US40727
申请日：1995-06-26
申请人： Jung-Chun Huang
设计人： Jung-Chun Huang

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