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1. 发明授权

US3940288A Method of making a semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US3940288A
公开(公告)日：1976-02-24
申请号：US468876
申请日：1974-05-10
申请人： Mikio Takagi , Hajime Kamioka , Kazufumi Nakayama , Haruo Shimoda
发明人： Mikio Takagi , Hajime Kamioka , Kazufumi Nakayama , Haruo Shimoda
IPC分类号： H01L21/00 , H01L21/033 , H01L21/225 , H01L23/485 , H01L29/00 , H01L21/265
CPC分类号： H01L23/485 , H01L21/00 , H01L21/033 , H01L21/2257 , H01L29/00 , H01L2924/0002 , H01L2924/3011 , Y10S148/111 , Y10S148/124 , Y10S148/141 , Y10S148/143 , Y10S148/145
摘要： A method of making a semiconductor device capable of high-speed operation is disclosed in which when the current gain-bandwidth is increased by the formation of a shallow base region. A side etching process is used to decrease the base spreading resistance and to allow ease in the formation of an emitter region of fine pattern. When the emitter region is formed by using polycrystalline silicon as a source of impurity diffusion, that area of an insulating film on a semiconductor substrate which adjoins the polycrystalline silicon is removed before the impurity diffusion so as to prevent an abnormal diffusion phenomenon.BACKGROUND OF THE INVENTION
摘要翻译：公开了一种制造能够高速运行的半导体器件的方法，其中当通过形成浅的基极区域增加电流增益带宽时。使用侧蚀刻工艺来降低基极扩散电阻并且容易形成精细图案的发射极区域。当通过使用多晶硅作为杂质扩散源形成发射极区域时，在杂质扩散之前去除邻接多晶硅的半导体衬底上的绝缘膜的面积，以防止异常扩散现象。

2. 发明授权

US4210473A Process for producing a semiconductor device 失效
标题翻译：半导体装置的制造方法
公开(公告)号：US4210473A
公开(公告)日：1980-07-01
申请号：US955754
申请日：1978-10-30
申请人： Mikio Takagi , Hajime Kamioka , Haruo Shimoda , Hidekazu Miyamoto
发明人： Mikio Takagi , Hajime Kamioka , Haruo Shimoda , Hidekazu Miyamoto
IPC分类号： H01L29/78 , H01L21/223 , H01L21/3215 , H01L21/336
CPC分类号： H01L29/66575 , H01L21/223 , H01L21/32155
摘要： Disclosed is a process for producing a semiconductor device, especially, a high speed silicon gate field effect semiconductor device, by diffusing an impurity substance, such as arsenic or phosphorus, into a polycrystalline silicon layer to be converted into a silicon gate having a high electroconductivity and into portions of a single crystal silicon substrate to be converted into source and drain regions, in a sealed capsule, at an elevated temperature, under a vacuum. During the above-mentioned diffusing operation, the impurity substance can diffuse into the polycrystalline silicon layer at a higher diffusing speed than into the single crystal silicon substrate.
摘要翻译：公开了通过将诸如砷或磷的杂质物质扩散到多晶硅层中以形成具有高导电性的硅栅极的半导体器件，特别是高速硅栅极场效应半导体器件的制造方法并且在真空下在高温下将其转化成密封胶囊中的单晶硅衬底的一部分以转化为源区和漏区。在上述扩散操作期间，杂质物质可以以比单晶硅衬底更高的扩散速度扩散到多晶硅层中。

3. 发明授权

US4503315A Semiconductor device with fuse 失效
标题翻译：带保险丝的半导体器件
公开(公告)号：US4503315A
公开(公告)日：1985-03-05
申请号：US453099
申请日：1982-12-27
申请人： Hajime Kamioka , Mikio Takagi , Noriaki Sato , Motoo Nakano , Takashi Iwai
发明人： Hajime Kamioka , Mikio Takagi , Noriaki Sato , Motoo Nakano , Takashi Iwai
IPC分类号： G11C17/06 , G11C17/14 , H01L21/82 , H01L23/525 , H01L27/10 , H01L23/52
CPC分类号： H01L23/5258 , H01L2924/0002
摘要： A semiconductor device with a fuse including an insulating layer having at least one step. A fusible film on the insulating layer crosses the step and a covering film is formed on the fusible film, the step and the insulating layer. When the portion of the fusible film crossing the step is irradiated with a laser beam the portion of the fusible film on the upper surface of the insulating layer melts and flows onto the lower surface of the insulating layer without forming a hole, thereby separating the fusible film at the step.
摘要翻译：一种具有熔丝的半导体器件，包括具有至少一个台阶的绝缘层。绝缘层上的可熔薄膜穿过该步骤，并且在可熔膜，台阶和绝缘层上形成覆盖膜。当穿过该台阶的可熔膜的部分被激光束照射时，绝缘层上表面上的可熔膜的部分熔化并流到绝缘层的下表面，而不形成孔，从而将可熔体电影在一步。

4. 发明授权

US4412388A Method for drying semiconductor substrates 失效
标题翻译：干燥半导体衬底的方法
公开(公告)号：US4412388A
公开(公告)日：1983-11-01
申请号：US218802
申请日：1980-12-22
申请人： Mikio Takagi , Hajime Kamioka
发明人： Mikio Takagi , Hajime Kamioka
IPC分类号： H01L21/304 , F26B3/347 , F26B21/14 , G03F7/38 , G03F7/40 , H01L21/00 , H01L21/68 , F26B3/34
CPC分类号： H01L21/67034 , F26B21/14 , F26B3/347 , G03F7/38 , G03F7/40 , H01L21/68
摘要： A method for drying semiconductor substrates wherein a plurality of semiconductor substrates are irradiated with electromagnetic waves emitted from a waveguide in a non-reactive atmosphere of normal atmospheric pressure while the semiconductor substrates are positioned so that the predominant faces thereof substantially form right angles to the face of an opening of the waveguide.
摘要翻译：一种用于干燥半导体衬底的方法，其中多个半导体衬底在正常大气压的非反应性气氛中从波导发射的电磁波照射，同时半导体衬底被定位成使得其主要面基本上与面部成直角的波导的开口。

5. 发明授权

US4275094A Process for high pressure oxidation of silicon 失效
标题翻译：硅高压氧化工艺
公开(公告)号：US4275094A
公开(公告)日：1981-06-23
申请号：US955755
申请日：1978-10-30
申请人： Mikio Takagi , Mamoru Maeda , Hajime Kamioka
发明人： Mikio Takagi , Mamoru Maeda , Hajime Kamioka
IPC分类号： C30B33/00 , H01L21/316
CPC分类号： H01L21/02238 , C30B33/005 , H01L21/02255 , H01L21/31662
摘要： A process for high pressure oxidation of silicon comprising the steps of inserting silicon wafers and an oxidizing substance into a quartz capsule sealing the quartz capsule gas-tightly by fusing, and heating the quartz capsule to generate a high pressure oxidizing atmosphere therein and to form an oxide film on the silicon wafers without a flow of the oxidizing atmosphere. In a case where water is used as the oxidizing substance, the water is frozen and the inside space of the quartz capsule is exhausted before the sealing operation. Furthermore, in a case where an oxidizing gas, e.g. oxygen gas, is used as the oxidizing substance, if the pressure of the gas is higher than the ambient pressure, the quartz capsule is cooled to decrease the gas pressure to a pressure below the ambient pressure before the sealing operation.
摘要翻译：一种用于硅的高压氧化的方法，包括以下步骤：将硅晶片和氧化物质插入石英胶囊中，通过熔融气密地密封石英胶囊，并加热石英胶囊以在其中产生高压氧化气氛，并形成硅晶片上的氧化膜，而没有氧化气氛的流动。在使用水作为氧化物质的情况下，水被冻结，石英胶囊的内部空间在密封操作之前被排出。此外，在例如氧化气体的情况下，氧气用作氧化物质，如果气体的压力高于环境压力，则在密封操作之前，将石英胶囊冷却以将气体压力降低到低于环境压力的压力。

6. 发明授权

US4293590A Process for high pressure oxidation of silicon 失效
公开(公告)号：US4293590A
公开(公告)日：1981-10-06
申请号：US192813
申请日：1980-10-01
申请人： Mikio Takagi , Mamoru Maeda , Hajime Kamioka
发明人： Mikio Takagi , Mamoru Maeda , Hajime Kamioka
IPC分类号： C30B33/00 , H01L21/316
CPC分类号： H01L21/02238 , C30B33/005 , H01L21/02255 , H01L21/31662
摘要： A process for high pressure oxidation of silicon comprising the steps of inserting silicon wafers and an oxidizing substance into a quartz capsule sealing the quartz capsule gas-tightly by fusing, and heating the quartz capsule to generate a high pressure oxidizing atmosphere therein and to form an oxide film on the silicon wafers without a flow of the oxidizing atmosphere. In a case where water is used as the oxidizing substance, the water is frozen and the inside space of the quartz capsule is exhausted before the sealing operation. Furthermore, in a case where an oxidizing gas, e.g. oxygen gas, is used as the oxidizing substance, if the pressure of the gas is higher than the ambient pressure, the quartz capsule is cooled to decrease the gas pressure to a pressure below the ambient pressure before the sealing operation.

7. 发明授权

US4293589A Process for high pressure oxidation of silicon 失效
公开(公告)号：US4293589A
公开(公告)日：1981-10-06
申请号：US192812
申请日：1980-10-01
申请人： Mikio Takagi , Mamoru Maeda , Hajime Kamioka
发明人： Mikio Takagi , Mamoru Maeda , Hajime Kamioka
IPC分类号： C30B33/00 , H01L21/316
CPC分类号： H01L21/02238 , C30B33/005 , H01L21/02255 , H01L21/31662
摘要： A process for high pressure oxidation of silicon comprising the steps of inserting silicon wafers and an oxidizing substance into a quartz capsule sealing the quartz capsule gas-tightly by fusing, and heating the quartz capsule to generate a high pressure oxidizing atmosphere therein and to form an oxide film on the silicon wafers without a flow of the oxidizing atmosphere. In a case where water is used as the oxidizing substance, the water is frozen and the inside space of the quartz capsule is exhausted before the sealing operation. Furthermore, in a case where an oxidizing gas, e.g. oxygen gas, is used as the oxidizing substance, if the pressure of the gas is higher than the ambient pressure, the quartz capsule is cooled to decrease the gas pressure to a pressure below the ambient pressure before the sealing operation.

8. 发明申请

US20100184297A1 METHOD FOR PROTECTING SEMICONDUCTOR WAFER AND PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：用于保护半导体晶体管的方法和用于生产半导体器件的方法
公开(公告)号：US20100184297A1
公开(公告)日：2010-07-22
申请号：US12665529
申请日：2008-06-20
申请人： Mikio Takagi , Seiichi Takahashi
发明人： Mikio Takagi , Seiichi Takahashi
IPC分类号： H01L21/306
CPC分类号： H01L21/02063 , H01J37/3244 , H01J37/32449 , H01L21/67069
摘要： [Task] In a proposed protection method, re-oxidation of a semiconductor wafer is prevented. The method is appropriate for fine patterned semiconductor device. A wafer is dry etched and is subjected to a next step of forming an electrode material film. The dry-etched wafer is maintained not re-oxidized until the next step. The dry etching reaction products are appropriately removed.[Means for Solution] A wafer, on which the dry etching reaction products remain, is protected by the reaction products. The wafer is held in an inert gas protective atmosphere having a pressure of 50 Pa or more and an atmospheric pressure or less, or is held in air equivalent to the air of a clean room or in a gas-mixture atmosphere of said air and an inert gas. The reaction products are decomposed and removed by heating immediately before the formation of an electrode-material film.
摘要翻译： [任务]在所提出的保护方法中，防止了半导体晶片的再氧化。该方法适用于精细图案化半导体器件。将晶片干蚀刻，并进行形成电极材料膜的下一步骤。干蚀刻的晶片保持不再氧化直到下一步骤。适当地除去干蚀刻反应产物。 [解决方案]残留有干蚀刻反应产物的晶片被反应产物保护。将晶片保持在压力为50Pa以上且大气压以下的惰性气体保护气氛中，或者保持在与洁净室的空气或空气的气体混合气氛相当的空气中，惰性气体。反应产物在形成电极材料膜之前立即加热分解和除去。

9. 发明申请

US20090117747A1 Method for Surface Treating Semiconductor 有权
标题翻译：表面处理半导体的方法
公开(公告)号：US20090117747A1
公开(公告)日：2009-05-07
申请号：US11990440
申请日：2006-08-15
申请人： Mikio Takagi , Seiichi Takahashi , Hiroaki Inoue , Masayuki Satou , Yutaka Miura
发明人： Mikio Takagi , Seiichi Takahashi , Hiroaki Inoue , Masayuki Satou , Yutaka Miura
IPC分类号： H01L21/3065
CPC分类号： H01L21/67109 , H01L21/02046 , H01L21/306 , H01L21/67017 , H01L21/67757
摘要： [Task] Native oxide film on a semiconductor silicon wafer(s) is dry etched at a temperature of 50° C. or less. Hydrogen treatment is then carried out a temperature of 100° C. or more to bond the dangling bonds with hydrogen. A jig 9 that has been used is again used for loading new semiconductor silicon wafer(s) 10. The wafer(s) on the jig 9 is subjected to removal of a native oxide film and then hydrogen bonding. The resultant heat remains in jig and makes it difficult to maintain the wafers to temperature appropriate to removal of a native oxide film.[Means for Solution] After treatment of hydrogen bonding, inert gas having temperature of from 0 to −30° C. is injected into reaction vessel 5 and/or treatment preparing vessel 21, in which a native oxide film has been removed.
摘要翻译： [任务]半导体硅晶片上的天然氧化物膜在50℃以下的温度下进行干法蚀刻。然后进行氢气处理，其温度为100℃以上，以使悬挂键与氢键合。已经使用的夹具9再次用于装载新的半导体硅晶片10.将夹具9上的晶片除去自然氧化膜，然后氢键合。所得到的热量保留在夹具中，并且使得难以将晶片保持适于去除天然氧化物膜的温度。 [解决方案]在氢键合处理之后，将温度为0〜-30℃的惰性气体注入已除去自然氧化膜的反应容器5和/或处理制备容器21中。

10. 发明授权

US06248672B1 Method of producing a semiconductor device in a heating furnace having a reaction tube with a temperature-equalizing zone 失效
标题翻译：在具有温度均衡区的反应管的加热炉中制造半导体器件的方法
公开(公告)号：US06248672B1
公开(公告)日：2001-06-19
申请号：US09310760
申请日：1999-05-13
申请人： Mikio Takagi
发明人： Mikio Takagi
IPC分类号： C23C16455
CPC分类号： C23C16/45521 , C23C16/4401 , C23C16/4412 , C23C16/455 , C23C16/45591 , C23C16/4584 , H01L21/67017 , H01L21/67109 , H01L21/67115
摘要： In a method for producing a semiconductor device using a dual tube reactor, inert gas is fed into the vertical reaction-tube, a reaction gas is introduced into the vertical reaction-tube, the inert gas is exhausted through the annular channel formed between the inner tube and the outer tube at a bottom portion of the vertical reaction-tube; and, a wafer is heat treated in the vertical reaction-tube by means of a heating furnace. In order to decrease the number and size of the particles, the wafer is displaced upward and then positioned at a level substantially the same as or above the top end of the inner tube, and the reaction gas is introduced into the vertical reaction-tube at or above the position of the wafer. Furthermore, the inert gas is caused to flow from a bottom portion of the inner tube toward the wafer positioned as above. As a result, inflow of the reaction gas into the inner tube is impeded, and the generation of particles there can be lessened.
摘要翻译：在使用双管反应器的半导体器件的制造方法中，将惰性气体供给到垂直反应管中，将反应气体引入到垂直反应管中，惰性气体通过内部形成的环状通路排出管和外管在垂直反应管的底部; 并且通过加热炉在垂直反应管中对晶片进行热处理。为了减小颗粒的数量和尺寸，将晶片向上移位，然后定位在与内管的顶端基本相同或高于内管的水平上，并将反应气体引入垂直反应管中或高于晶片的位置。此外，使惰性气体从内管的底部朝向如上定位的晶片流动。结果，阻止反应气体进入内管，并且可以减少颗粒的产生。

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