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1. 发明申请

US20070041410A1 Apparatus for fabricating a display device 审中-公开
标题翻译：用于制造显示装置的装置
公开(公告)号：US20070041410A1
公开(公告)日：2007-02-22
申请号：US11588387
申请日：2006-10-27
申请人： Mikio Hongo , Sachio Uto , Mineo Nomoto , Toshihiko Nakata , Mutsuko Hatano , Shinya Yamaguchi , Makoto Ohkura
发明人： Mikio Hongo , Sachio Uto , Mineo Nomoto , Toshihiko Nakata , Mutsuko Hatano , Shinya Yamaguchi , Makoto Ohkura
IPC分类号： H01S3/10 , G02B27/10
CPC分类号： H01L21/02683 , H01L21/0268 , H01L21/02691 , H01L21/2026 , H01L21/268 , H01L27/1285 , H01L29/04 , H01L29/66757
摘要： Apparatus for fabricating a display device includes a stage capable of mounting an insulating substrate of the display device and moving the insulating substrate, linear scales which detect a position or moving distance of the substrate, a laser oscillator which generates continuous-waves laser light, a modulator which turns ON/OFF the continuous-wave laser light, a beam forming optic which shapes the continuous-wave laser light passing through the modulator into a linear or rectangular form, an objective lens which projects the at least one of the laser light on the insulating substrate so as to irradiate the insulating substrate with the laser light. The controller counts signals generated by the linear scales for every movement of the stage for a given distance, causes the modulator to turn the generated continuous-wave laser light in an ON state at time when a position of the insulating substrate on which the laser light irradiation is to be started reaches an area on which the laser light is projected, and causes the modulator to turn the generated continuous-wave laser light in an OFF state at another time.
摘要翻译：用于制造显示装置的装置包括能够安装显示装置的绝缘基板并移动绝缘基板的台，检测基板的位置或移动距离的线性标尺，产生连续波激光的激光振荡器，将连续波激光切换为ON / OFF的调制器，将通过调制器的连续波激光成形为直线或矩形的光束形成光学器件，将至少一个激光投射到的物镜绝缘基板，以激光照射绝缘基板。控制器对于给定距离的级的每次移动来对由线性标尺产生的信号进行计数，使得调制器将产生的连续波激光在其上的激光的绝缘基板的位置处于接通状态照射开始到达投射激光的区域，并且使得调制器在另一时间将所产生的连续波激光转为OFF状态。

2. 发明授权

US07326623B2 Method of manufacturing display device 有权
标题翻译：显示装置的制造方法
公开(公告)号：US07326623B2
公开(公告)日：2008-02-05
申请号：US11209742
申请日：2005-08-24
申请人： Mikio Hongo , Sachio Uto , Mineo Nomoto , Toshihiko Nakata , Mutsuko Hatano , Shinya Yamaguchi , Makoto Ohkura
发明人： Mikio Hongo , Sachio Uto , Mineo Nomoto , Toshihiko Nakata , Mutsuko Hatano , Shinya Yamaguchi , Makoto Ohkura
IPC分类号： H01L21/336 , H01L23/58
CPC分类号： H01L29/04 , B23K26/0622 , B23K26/064 , B23K26/0648 , B23K26/066 , B23K26/0665 , B23K26/0732 , H01L21/02422 , H01L21/02532 , H01L21/02678 , H01L21/02683 , H01L21/268 , H01L27/1285 , H01L27/1296 , H01L29/66757 , H01L29/78675
摘要： Arrangements (e.g., methods) for manufacturing a display device, including irradiating an amorphous semiconductor film formed on a substrate with an excimer laser beam to convert the amorphous semiconductor film into a polycrystalline semiconductor film; and irradiating predetermined areas of the polycrystalline semiconductor film intermittently with a continuous wave laser beam while a position of the substrate with respect to the continuous wave laser beam is scanned, crystal grains larger than those of the polycrystalline semiconductor film other than the predetermined areas are formed in each of the predetermined areas locally in the polycrystalline semiconductor film, wherein first thin film transistors are formed in the predetermined areas while second thin film transistors are formed in the polycrystalline semiconductor film other than the predetermined areas thereof.
摘要翻译：包括用于制造显示装置的布置（例如，方法），包括用准分子激光束照射形成在衬底上的非晶半导体膜，以将非晶半导体膜转换为多晶半导体膜; 并且在扫描基板相对于连续波激光束的位置时，用连续波激光束间歇地照射多晶半导体膜的预定区域，形成比除了预定区域以外的多晶半导体膜的晶粒大的晶粒在多晶半导体膜中局部的每个预定区域中，其中第一薄膜晶体管形成在预定区域中，而第二薄膜晶体管形成在除了其预定区域之外的多晶半导体膜中。

3. 发明授权

US07129124B2 Display device, process of fabricating same, and apparatus for fabricating same 失效
标题翻译：显示装置及其制造方法及其制造装置
公开(公告)号：US07129124B2
公开(公告)日：2006-10-31
申请号：US10628421
申请日：2003-07-29
申请人： Mikio Hongo , Sachio Uto , Mineo Nomoto , Toshihiko Nakata , Mutsuko Hatano , Shinya Yamaguchi , Makoto Ohkura
发明人： Mikio Hongo , Sachio Uto , Mineo Nomoto , Toshihiko Nakata , Mutsuko Hatano , Shinya Yamaguchi , Makoto Ohkura
IPC分类号： H01L21/00 , H01I21/26
CPC分类号： H01L21/02683 , H01L21/0268 , H01L21/02691 , H01L21/2026 , H01L21/268 , H01L27/1285 , H01L29/04 , H01L29/66757
摘要： The active layer (active region) of the thin-film transistor making up the driver circuit is obtained by reformation implemented by scanning the continuous-wave laser light, condensed into a linear form or a rectangle form extremely longer in the longitudinal direction than in the transverse direction, along a given direction crossing the longitudinal direction. This is made up of a poly silicon film containing crystal grains having no grain boundaries crossing the direction of current flow, that is, a band-like polycrystalline silicon film. As a result, it is possible to implement a display device having stable and high quality active elements outside the display region on the insulating substrate.
摘要翻译：构成驱动电路的薄膜晶体管的有源层（有源区）是通过扫描连续波激光而获得的，该连续波激光在纵向方向上比在横向，沿着与纵向相交的给定方向。这是由含有晶界与电流流动相交的晶粒的多晶硅膜，即带状多晶硅膜构成的。结果，可以实现在绝缘基板上的显示区域之外具有稳定且高质量的有源元件的显示装置。

4. 发明授权

US07834353B2 Method of manufacturing display device 有权
标题翻译：显示装置的制造方法
公开(公告)号：US07834353B2
公开(公告)日：2010-11-16
申请号：US12021714
申请日：2008-01-29
申请人： Mikio Hongo , Sachio Uto , Mineo Nomoto , Toshihiko Nakata , Mutsuko Hatano , Shinya Yamaguchi , Makoto Ohkura
发明人： Mikio Hongo , Sachio Uto , Mineo Nomoto , Toshihiko Nakata , Mutsuko Hatano , Shinya Yamaguchi , Makoto Ohkura
IPC分类号： H01L31/0376 , H01L21/00
CPC分类号： H01L29/04 , B23K26/0622 , B23K26/064 , B23K26/0648 , B23K26/066 , B23K26/0665 , B23K26/0732 , H01L21/02422 , H01L21/02532 , H01L21/02678 , H01L21/02683 , H01L21/268 , H01L27/1285 , H01L27/1296 , H01L29/66757 , H01L29/78675
摘要： A TFT device having a pixel portion and a driving circuit portion formed on a glass substrate; wherein at least the active layer (active region) of a transistor constituting said driving circuit comprises polycrystalline silicon including crystals that do not have crystal grain boundaries which cross the direction of current flow.
摘要翻译：一种具有形成在玻璃基板上的像素部分和驱动电路部分的TFT器件; 其中构成所述驱动电路的晶体管的至少有源层（有源区）包括多晶硅，其包括不具有与电流流动方向交叉的晶界的晶体。

5. 发明申请

US20080121894A1 METHOD OF MANUFACTURING DISPLAY DEVICE 有权
标题翻译：制造显示装置的方法
公开(公告)号：US20080121894A1
公开(公告)日：2008-05-29
申请号：US12021714
申请日：2008-01-29
申请人： Mikio HONGO , Sachio Uto , Mineo Nomoto , Toshihiko Nakata , Mutsuko Hatano , Shinya Yamaguchi , Makoto Ohkura
发明人： Mikio HONGO , Sachio Uto , Mineo Nomoto , Toshihiko Nakata , Mutsuko Hatano , Shinya Yamaguchi , Makoto Ohkura
IPC分类号： H01L33/00
CPC分类号： H01L29/04 , B23K26/0622 , B23K26/064 , B23K26/0648 , B23K26/066 , B23K26/0665 , B23K26/0732 , H01L21/02422 , H01L21/02532 , H01L21/02678 , H01L21/02683 , H01L21/268 , H01L27/1285 , H01L27/1296 , H01L29/66757 , H01L29/78675
摘要： A TFT device having a pixel portion and a driving circuit portion formed on a glass substrate; wherein at least the active layer (active region) of a transistor constituting said driving circuit comprises polycrystalline silicon including crystals that do not have crystal grain boundaries which cross the direction of current flow.
摘要翻译：一种具有形成在玻璃基板上的像素部分和驱动电路部分的TFT器件; 其中构成所述驱动电路的晶体管的至少有源层（有源区）包括多晶硅，其包括不具有与电流方向交叉的晶界的晶体。

6. 发明授权

US06943086B2 Laser annealing apparatus, TFT device and annealing method of the same 有权
标题翻译：激光退火装置，TFT器件及退火方法相同
公开(公告)号：US06943086B2
公开(公告)日：2005-09-13
申请号：US10267680
申请日：2002-10-10
申请人： Mikio Hongo , Sachio Uto , Mineo Nomoto , Toshihiko Nakata , Mutsuko Hatano , Shinya Yamaguchi , Makoto Ohkura
发明人： Mikio Hongo , Sachio Uto , Mineo Nomoto , Toshihiko Nakata , Mutsuko Hatano , Shinya Yamaguchi , Makoto Ohkura
IPC分类号： G02F1/1368 , B23K26/06 , B23K26/073 , G09F9/30 , H01L21/20 , H01L21/26 , H01L21/268 , H01L21/324 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/04 , H01L29/786 , H01S3/00 , B66C21/00
CPC分类号： H01L29/04 , B23K26/0622 , B23K26/064 , B23K26/0648 , B23K26/066 , B23K26/0665 , B23K26/0732 , H01L21/02422 , H01L21/02532 , H01L21/02678 , H01L21/02683 , H01L21/268 , H01L27/1285 , H01L27/1296 , H01L29/66757 , H01L29/78675
摘要： A laser beam is concentrated using an objective lens and radiated on a amorphous silicon film or polycrystalline silicon film having a grain size of one micron or less, the laser beam being processed from a continuous wave laser beam (1) to be pulsed using an EO modulator and to have arbitrary temporal energy change while pulsing ; (2) to have an arbitrary spatial energy distribution using a beam-homogenizer, filter having an arbitrary transmittance distribution, and rectangular slit; and (3) to eliminate coherency thereof using a high-speed rotating diffuser. In this manner, it is possible to realize a liquid crystal display device in which a driving circuit comprising a polycrystalline silicon film having substantially the same properties as a single crystal is incorporated in a TFT panel device.
摘要翻译：使用物镜将激光束集中并照射在具有1微米或更小的晶粒尺寸的非晶硅膜或多晶硅膜上，激光束从连续波激光束（1）处理以使用EO脉冲并且在脉冲时具有任意的时间能量变化; （2）使用束均化器，具有任意透射率分布的滤光器和矩形狭缝具有任意的空间能量分布; 和（3）消除使用高速旋转扩散器的相干性。以这种方式，可以实现一种液晶显示装置，其中包括具有与单晶基本上相同性质的多晶硅膜的驱动电路并入TFT面板装置中。

7. 发明授权

US07253864B2 Active matrix display device with active element including a semiconductor film formed of an aggregate of single crystals each extending in the same direction 有权
标题翻译：具有有源元件的有源矩阵显示装置包括由沿相同方向延伸的单晶聚集体形成的半导体膜
公开(公告)号：US07253864B2
公开(公告)日：2007-08-07
申请号：US11246225
申请日：2005-10-11
申请人： Hiroshi Kikuchi , Mikio Hongo , Mutsuko Hatano , Makoto Ohkura
发明人： Hiroshi Kikuchi , Mikio Hongo , Mutsuko Hatano , Makoto Ohkura
IPC分类号： G02F1/136 , H01L29/04 , H01L21/268
CPC分类号： H01L21/02686 , H01L21/0268 , H01L21/2026 , H01L27/1285 , H01L27/1296 , H01L29/66757 , H01L29/66765
摘要： A laser beam is selectively directed to an amorphous silicon film of a pixel portion on an active-matrix substrate of a display device to modify the amorphous silicon film into a polysilicon film. Pixel circuits such as thin film transistors are formed on the modified polysilicon film. Thus, it is possible to realize remarkably economically the display device provided with the active-matrix substrate having the high performance thin film transistor circuits.
摘要翻译：激光束被选择性地引导到显示装置的有源矩阵基板上的像素部分的非晶硅膜，以将非晶硅膜修改为多晶硅膜。像素电路如薄膜晶体管形成在改性多晶硅膜上。因此，可以显着地实现具有高性能薄膜晶体管电路的有源矩阵基板的显示装置。

8. 发明授权

US07023500B2 Display device with active-matrix transistor having silicon film modified by selective laser irradiation 失效
标题翻译：具有通过选择性激光照射改性的硅膜的有源矩阵晶体管的显示装置
公开(公告)号：US07023500B2
公开(公告)日：2006-04-04
申请号：US10345261
申请日：2003-01-16
申请人： Hiroshi Kikuchi , Mikio Hongo , Mutsuko Hatano , Makoto Ohkura
发明人： Hiroshi Kikuchi , Mikio Hongo , Mutsuko Hatano , Makoto Ohkura
IPC分类号： G02F1/136 , H01L21/268
CPC分类号： H01L21/02686 , H01L21/0268 , H01L21/2026 , H01L27/1285 , H01L27/1296 , H01L29/66757 , H01L29/66765
摘要： An active matrix display device is provided which includes an active matrix substrate having a modified region which is formed by applying laser beams selectively to a silicon film formed on an insulating board. Active circuits, which include pixel circuits, are formed in the modified region. The pitch of the pixel circuits formed in a display region of the active matrix substrate, which display region is in the modified region, is set to be substantially equal to a pitch of peripheral circuits formed in the modified region in a peripheral region of the active matrix substrate. In addition, the pitch of the pixel circuits can be set to be substantially twice the pitch of the pixels themselves.
摘要翻译：提供一种有源矩阵显示装置，其包括有源矩阵基板，该有源矩阵基板具有通过选择性地对形成在绝缘板上的硅膜施加激光束而形成的改质区域。包括像素电路在内的有源电路形成在修改区域中。在显示区域处于修改区域的有源矩阵基板的显示区域中形成的像素电路的间距被设定为基本上等于在活动的周边区域中形成在修改区域中的外围电路的间距矩阵基板。此外，像素电路的间距可以被设置为基本上是像素本身的间距的两倍。

9. 发明授权

US07183148B2 Display panel and method for manufacturing the same 有权
标题翻译：显示面板及其制造方法
公开(公告)号：US07183148B2
公开(公告)日：2007-02-27
申请号：US10914333
申请日：2004-08-10
申请人： Akio Yazaki , Mikio Hongo , Mutsuko Hatano , Hiroshi Saito , Makoto Ohkura
发明人： Akio Yazaki , Mikio Hongo , Mutsuko Hatano , Hiroshi Saito , Makoto Ohkura
IPC分类号： H01L21/00
CPC分类号： H01L21/02683 , B23K26/032 , B23K26/064 , B23K26/0648 , B23K26/0652 , B23K26/066 , B23K26/0665 , B23K26/0732 , H01L21/02532 , H01L21/02691 , H01L21/2026 , H01L27/1229 , H01L27/1285 , H01L27/1296 , H01L29/04 , H01L29/66757 , H01L29/78675
摘要： An amorphous silicon film on an insulating substrate portion to be formed as an individual display panel in a large-sized insulating substrate is irradiated with a continuous-wave (CW) solid-state laser beam condensed linearly, while being scanned therewith at a fixed speed in the width direction of the condensed laser beam. A pixel portion and a peripheral circuit portion in the same insulating substrate portion are irradiated with the laser beam temporally modulated to have a power density high enough to provide predetermined crystallinity. The amorphous silicon film is transformed into a silicon film having crystallinity corresponding to performance required for thin film transistors to be built in each of the pixel portion and the peripheral circuit portion. In such a manner, a thin film transistor circuit having optimum crystallinity required in the pixel or peripheral circuit portion can be obtained while high throughput is kept. Thus, a product having good display features as a display panel can be provided inexpensively.
摘要翻译：在大尺寸绝缘基板上作为单独显示面板形成的绝缘基板部分上的非晶硅膜用线性冷却的连续波（CW）固态激光束照射，同时以固定速度扫描在聚光激光束的宽度方向上。在同一绝缘基板部分中的像素部分和外围电路部分被照射到时间调制的激光束以具有足够高的功率密度以提供预定的结晶度。将非晶硅膜转变成具有对应于要构建在每个像素部分和外围电路部分中的薄膜晶体管所需的性能的结晶度的硅膜。以这种方式，可以获得在像素或外围电路部分所需的最佳结晶度的薄膜晶体管电路，同时保持高通量。因此，可以廉价地提供具有作为显示面板的良好显示特征的产品。

10. 发明申请

US20060029426A1 Active matrix display device 有权
标题翻译：主动矩阵显示装置
公开(公告)号：US20060029426A1
公开(公告)日：2006-02-09
申请号：US11246225
申请日：2005-10-11
申请人： Hiroshi Kikuchi , Mikio Hongo , Mutsuko Hatano , Makoto Ohkura
发明人： Hiroshi Kikuchi , Mikio Hongo , Mutsuko Hatano , Makoto Ohkura
IPC分类号： G03G15/00 , G03G15/22
CPC分类号： H01L21/02686 , H01L21/0268 , H01L21/2026 , H01L27/1285 , H01L27/1296 , H01L29/66757 , H01L29/66765
摘要： A laser beam is selectively directed to an amorphous silicon film of a pixel portion on an active-matrix substrate of a display device to modify the amorphous silicon film into a polysilicon film. Pixel circuits such as thin film transistors are formed on the modified polysilicon film. Thus, it is possible to realize remarkably economically the display device provided with the active-matrix substrate having the high performance thin film transistor circuits.
摘要翻译：激光束被选择性地引导到显示装置的有源矩阵基板上的像素部分的非晶硅膜，以将非晶硅膜修改为多晶硅膜。像素电路如薄膜晶体管形成在改性多晶硅膜上。因此，可以显着地实现具有高性能薄膜晶体管电路的有源矩阵基板的显示装置。

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