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    • 5. 发明申请
    • High pixel count short-wave to infrared image sensor
    • 高像素数量短波至红外图像传感器
    • US20160181325A1
    • 2016-06-23
    • US14544326
    • 2014-12-23
    • Paul JohnsonLawrence Sverdrup
    • Paul JohnsonLawrence Sverdrup
    • H01L27/30H01L51/42
    • H01L27/307H01L27/14649H01L51/0046H01L51/4213Y02E10/549
    • A CMOS image sensor combining CMOS read-out integrated circuits (ROICs) and photodiode on active pixel (POAP) technology with quantum dot (PbS-CQD) detector material. This approach provides sensors and systems that are easily manufacturable with high yields The approach dramatically lowers the cost per pixel, reduces the pixel size, and increases the pixel count of SWIR sensors and cameras. The PbS-CQD detector material provides optical performance approaching that of InGaAs, and outperforms it in some respects. PbS-CQD detectors include multi-layered conformal thin-films, applied to the ROICs in liquid form. The films are perfectly suited for application over wide surface areas, limited only by wafer or substrate size.
    • CMOS图像传感器组合了CMOS读出集成电路(ROIC)和光电二极管在有源像素(POAP)技术上与量子点(PbS-CQD)检测器材料。 这种方法提供了可以高产量易于制造的传感器和系统。该方法大大降低了每像素的成本,减少了像素大小,并增加了SWIR传感器和摄像机的像素数量。 PbS-CQD检测器材料提供接近InGaAs的光学性能,并且在某些方面优于其。 PbS-CQD检测器包括以液体形式施加到ROIC的多层保形薄膜。 这些膜非常适合在宽的表面区域上应用,仅受到晶片或基板尺寸的限制。