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1. 发明申请

US20140045317A1 Methods Of Forming An Array Of Memory Cells, Methods Of Forming A Plurality Of Field Effect Transistors, Methods Of Forming Source/Drain Regions And Isolation Trenches, And Methods Of Forming A Series Of Spaced Trenches Into A Substrate 有权
标题翻译：形成记忆体阵列的方法，形成多个场效应晶体管的方法，形成源极/漏极区域的方法和隔离沟槽以及将一系列间距沟槽形成基板的方法
公开(公告)号：US20140045317A1
公开(公告)日：2014-02-13
申请号：US14053665
申请日：2013-10-15
申请人： Micron Technology, Inc.
发明人： Neal L. Davis , Richard T. Housley , Ranjan Khurana
IPC分类号： H01L21/762
CPC分类号： H01L21/76224 , H01L21/3065 , H01L21/3086 , H01L21/823412 , H01L21/823431 , H01L21/823437 , H01L21/823462 , H01L27/105 , H01L27/1052
摘要： A method of forming a series of spaced trenches into a substrate includes forming a plurality of spaced lines over a substrate. Anisotropically etched sidewall spacers are formed on opposing sides of the spaced lines. Individual of the lines have greater maximum width than minimum width of space between immediately adjacent of the spacers between immediately adjacent of the lines. The spaced lines are removed to form a series of alternating first and second mask openings between the spacers. The first mask openings are located where the spaced lines were located and are wider than the second mask openings. Alternating first and second trenches are simultaneously etched into the substrate through the alternating first and second mask openings, respectively, to form the first trenches to be wider and deeper within the substrate than are the second trenches. Other implementations and embodiments are disclosed.
摘要翻译：将一系列间隔开的沟槽形成到衬底中的方法包括在衬底上形成多个间隔开的线。各向异性蚀刻的侧壁间隔物形成在间隔开的线的相对侧上。这些线的个体具有比在紧邻线之间的紧邻的间隔物之间的最小宽度的最大宽度。去除间隔的线以在间隔件之间形成一系列交替的第一和第二掩模开口。第一掩模开口位于间隔开的线的位置并且比第二掩模开口更宽。交替的第一和第二沟槽分别通过交替的第一和第二掩模开口同时蚀刻到衬底中，以形成比第二沟槽在衬底内更宽和更深的第一沟槽。公开了其他实现和实施例。

2. 发明授权

US09229328B2 Methods of forming semiconductor device structures, and related semiconductor device structures 有权
标题翻译：形成半导体器件结构的方法以及相关的半导体器件结构
公开(公告)号：US09229328B2
公开(公告)日：2016-01-05
申请号：US13875918
申请日：2013-05-02
申请人： Micron Technology, Inc.
发明人： Ranjan Khurana , Gurpreet S. Lugani , Dan B. Millward
IPC分类号： G03F7/40
CPC分类号： G03F7/40 , G03F7/0002
摘要： A method of forming a semiconductor device structure comprises forming a template material over a substrate, the template material exhibiting preferential wetting to a polymer block of a block copolymer. A positive tone photoresist material is formed over the template material. The positive tone photoresist material is exposed to radiation to form photoexposed regions and non-photoexposed regions of the positive tone photoresist material. The non-photoexposed regions of the positive tone photoresist material are removed with a negative tone developer to form a pattern of photoresist features. The pattern of photoresist features and unprotected portions of the template material are exposed to an oxidizing plasma to form trimmed photoresist features and a pattern of template features. The trimmed photoresist features are removed with a positive tone developer. Other methods of forming a semiconductor device structure, and a semiconductor device structure are also described.
摘要翻译：形成半导体器件结构的方法包括在衬底上形成模板材料，该模板材料对嵌段共聚物的聚合物嵌段表现优先润湿。在模板材料上形成正色调光致抗蚀剂材料。正色光致抗蚀剂材料暴露于辐射以形成正色调光致抗蚀剂材料的光引射区域和非光照区域。用负色调显影剂除去正色调光致抗蚀剂材料的非光引射区域以形成光刻胶特征图案。模板材料的光致抗蚀剂特征图案和未保护部分的图案暴露于氧化等离子体以形成修整的光致抗蚀剂特征和模板特征图案。用正色调显影剂除去修剪的光致抗蚀剂特征。还描述了形成半导体器件结构的其它方法以及半导体器件结构。

3. 发明申请

US20140162459A1 Methods of Forming A Pattern On A Substrate 有权
标题翻译：在基板上形成图案的方法
公开(公告)号：US20140162459A1
公开(公告)日：2014-06-12
申请号：US13712830
申请日：2012-12-12
申请人： MICRON TECHNOLOGY, INC.
发明人： Shane J. Trapp , Ranjan Khurana , Kevin R. Shea
IPC分类号： H01L21/308
CPC分类号： H01L21/308 , H01L21/0337 , H01L21/266 , H01L21/31144 , H01L21/76816 , Y10S438/947
摘要： A method of forming a pattern on a substrate includes forming spaced first material-comprising pillars projecting elevationally outward of first openings formed in second material. Sidewall spacers are formed over sidewalls of the first material-comprising pillars. The sidewall spacers form interstitial spaces laterally outward of the first material-comprising pillars. The interstitial spaces are individually surrounded by longitudinally-contacting sidewall spacers that are over sidewalls of four of the first material-comprising pillars.
摘要翻译：在衬底上形成图案的方法包括在第二材料中形成的第一开口的高度向外突出形成间隔开的第一材料包括柱。在第一含材料柱的侧壁上形成侧壁间隔物。侧壁间隔物在第一含材料柱的横向向外形成间隙空间。间隙空间由四个第一材料包括柱的侧壁上的纵向接触的侧壁间隔单独包围。

4. 发明申请

US20140162458A1 Methods of Forming A Pattern On A Substrate 有权
标题翻译：在基板上形成图案的方法
公开(公告)号：US20140162458A1
公开(公告)日：2014-06-12
申请号：US13712820
申请日：2012-12-12
申请人： MICRON TECHNOLOGY, INC.
发明人： Ranjan Khurana , Anton J. DeVillers , Kevin J. Torek , Shane J. Trapp , Scott L. Light , James M. Buntin
IPC分类号： H01L21/308 , H01L21/302
CPC分类号： H01L21/3086 , H01L21/0273 , H01L21/0337 , H01L21/22 , H01L21/266 , H01L21/302 , H01L21/31138 , H01L21/31144 , H01L21/32 , H01L21/76816
摘要： A method of forming a pattern on a substrate includes forming openings in material of a substrate. The openings are widened to join with immediately adjacent of the openings to form spaced pillars comprising the material after the widening. Other embodiments are disclosed.
摘要翻译：在衬底上形成图案的方法包括在衬底的材料中形成开口。开口被加宽以与紧邻的开口接合以在扩宽之后形成包括材料的间隔的柱。公开了其他实施例。

5. 发明授权

US08999852B2 Substrate mask patterns, methods of forming a structure on a substrate, methods of forming a square lattice pattern from an oblique lattice pattern, and methods of forming a pattern on a substrate 有权
标题翻译：基板掩模图案，在基板上形成结构的方法，从倾斜格子图案形成正方形格子图案的方法，以及在基板上形成图案的方法
公开(公告)号：US08999852B2
公开(公告)日：2015-04-07
申请号：US13712806
申请日：2012-12-12
申请人： Micron Technology, Inc.
发明人： Vishal Sipani , Anton J. deVillers , William R. Brown , Shane J. Trapp , Ranjan Khurana , Kevin R. Shea
IPC分类号： H01L21/302 , H01L21/027 , H01L21/033 , H01L21/311
CPC分类号： H01L21/308 , H01L21/02642 , H01L21/0273 , H01L21/0337 , H01L21/22 , H01L21/266 , H01L21/31138 , H01L21/31144 , H01L21/32 , H01L21/76816
摘要： A method of forming a pattern on a substrate comprises forming spaced, upwardly-open, cylinder-like structures projecting longitudinally outward of a base. Sidewall lining is formed over inner and over outer sidewalls of the cylinder-like structures, and that forms interstitial spaces laterally outward of the cylinder-like structures. The interstitial spaces are individually surrounded by longitudinally-contacting sidewall linings that are over outer sidewalls of four of the cylinder-like structures. Other embodiments are disclosed, including structure independent of method.
摘要翻译：在衬底上形成图案的方法包括形成间隔开的向上开口的圆柱状结构，其纵向向外突出。侧壁衬里形成在圆柱状结构的内侧和上侧外侧上，并且在圆柱状结构的横向外侧形成间隙空间。间隙空间被四个圆柱状结构的外侧壁上的纵向接触的侧壁衬里分开包围。公开了其他实施例，包括与方法无关的结构。

6. 发明申请

US20140370684A1 METHODS FOR FORMING SUB-RESOLUTION FEATURES IN SEMICONDUCTOR DEVICES 有权
标题翻译：在半导体器件中形成分解特征的方法
公开(公告)号：US20140370684A1
公开(公告)日：2014-12-18
申请号：US13918065
申请日：2013-06-14
申请人： Micron Technology, Inc.
发明人： Ranjan Khurana , Michael Hyatt , Scott L. Light , Kevin J. Torek , Anton J. deVilliers
IPC分类号： H01L21/768 , H01L49/02
CPC分类号： H01L21/76816 , G03F7/0035 , G03F7/095 , H01L21/0273 , H01L21/0337 , H01L21/0338 , H01L21/31144 , H01L28/90
摘要： Methods of forming semiconductor devices and features in semiconductor device structures include conducting an anti-spacer process to remove portions of a first mask material to form first openings extending in a first direction. Another anti-spacer process is conducted to remove portions of the first mask material to form second openings extending in a second direction at an angle to the first direction. Portions of the second mask material underlying the first mask material at intersections of the first openings and second openings are removed to form holes in the second mask material and to expose a substrate underlying the second mask material.
摘要翻译：在半导体器件结构中形成半导体器件和特征的方法包括进行防间隔工艺以去除第一掩模材料的部分以形成沿第一方向延伸的第一开口。进行另一个防间隔处理以去除第一掩模材料的部分，以形成沿与第一方向成角度的第二方向延伸的第二开口。去除在第一开口和第二开口的交叉点处的第一掩模材料下面的第二掩模材料的部分，以在第二掩模材料中形成孔并暴露第二掩模材料下面的衬底。

7. 发明授权

US08889558B2 Methods of forming a pattern on a substrate 有权
标题翻译：在基板上形成图案的方法
公开(公告)号：US08889558B2
公开(公告)日：2014-11-18
申请号：US13712820
申请日：2012-12-12
申请人： Micron Technology, Inc.
发明人： Ranjan Khurana , Anton J. deVillers , Kevin J. Torek , Shane J. Trapp , Scott L. Light , James M. Buntin
IPC分类号： H01L21/308 , B44C1/22 , H01L21/302
CPC分类号： H01L21/3086 , H01L21/0273 , H01L21/0337 , H01L21/22 , H01L21/266 , H01L21/302 , H01L21/31138 , H01L21/31144 , H01L21/32 , H01L21/76816
摘要： A method of forming a pattern on a substrate includes forming openings in material of a substrate. The openings are widened to join with immediately adjacent of the openings to form spaced pillars comprising the material after the widening. Other embodiments are disclosed.
摘要翻译：在衬底上形成图案的方法包括在衬底的材料中形成开口。开口被加宽以与紧邻的开口接合以在扩宽之后形成包括材料的间隔柱。公开了其他实施例。

8. 发明申请

US20140162457A1 Substrate Mask Patterns, Methods Of Forming A Structure On A Substrate, Methods Of Forming A Square Lattice Pattern From An Oblique Lattice Pattern, And Methods Of Forming A Pattern On A Substrate 有权
标题翻译：底物掩模图案，在基体上形成结构的方法，从斜面图案形成方形格子图案的方法以及在基板上形成图案的方法
公开(公告)号：US20140162457A1
公开(公告)日：2014-06-12
申请号：US13712806
申请日：2012-12-12
申请人： MICRON TECHNOLOGY, INC.
发明人： Vishal Sipani , Anton J. deVillers , William R. Brown , Shane J. Trapp , Ranjan Khurana , Kevin R. Shea
IPC分类号： H01L21/311 , H01L21/31
CPC分类号： H01L21/308 , H01L21/02642 , H01L21/0273 , H01L21/0337 , H01L21/22 , H01L21/266 , H01L21/31138 , H01L21/31144 , H01L21/32 , H01L21/76816
摘要： A method of forming a pattern on a substrate comprises forming spaced, upwardly-open, cylinder-like structures projecting longitudinally outward of a base. Sidewall lining is formed over inner and over outer sidewalls of the cylinder-like structures, and that forms interstitial spaces laterally outward of the cylinder-like structures. The interstitial spaces are individually surrounded by longitudinally-contacting sidewall linings that are over outer sidewalls of four of the cylinder-like structures. Other embodiments are disclosed, including structure independent of method.
摘要翻译：在衬底上形成图案的方法包括形成间隔开的向上开口的圆柱状结构，其纵向向外突出。侧壁衬里形成在圆柱状结构的内侧和上侧外侧上，并且在圆柱状结构的横向外侧形成间隙空间。间隙空间被四个圆柱状结构的外侧壁上的纵向接触的侧壁衬里分开包围。公开了其他实施例，包括与方法无关的结构。

9. 发明授权

US09460998B2 Semiconductor constructions and methods of forming semiconductor constructions 有权
标题翻译：半导体结构和形成半导体结构的方法
公开(公告)号：US09460998B2
公开(公告)日：2016-10-04
申请号：US14259313
申请日：2014-04-23
申请人： Micron Technology, Inc.
发明人： Justin B. Dorhout , Ranjan Khurana , David Swindler , Jianming Zhou
IPC分类号： H01L23/52 , H01L23/528 , H01L21/033 , H01L21/311 , H01L21/768
CPC分类号： H01L23/528 , H01L21/0337 , H01L21/0338 , H01L21/31144 , H01L21/76816 , H01L2924/0002 , H01L2924/00
摘要： Some embodiments include a semiconductor construction having a pair of lines extending primarily along a first direction, and having a pair of contacts between the lines. The contacts are spaced from one another by a lithographic dimension, and are spaced from the lines by sub-lithographic dimensions. Some embodiments include a method of forming a semiconductor construction. Features are formed over a base. Each feature has a first type sidewall and a second type sidewall. The features are spaced from one another by gaps. Some of the gaps are first type gaps between first type sidewalls, and others of the gaps are second type gaps between second type sidewalls. Masking material is formed to selectively fill the first type gaps relative to the second type gaps. Excess masking material is removed to leave a patterned mask. A pattern is transferred from the patterned mask into the base.
摘要翻译：一些实施例包括具有主要沿着第一方向延伸的一对线并且在线之间具有一对接触的半导体结构。触点通过光刻尺寸彼此间隔开，并且通过亚光刻尺寸与线间隔开。一些实施例包括形成半导体结构的方法。特征形成在一个基地上。每个特征具有第一类型侧壁和第二类型侧壁。这些特征通过间隙彼此间隔开。一些间隙是第一类型侧壁之间的第一类型间隙，而其它间隙是第二类型侧壁之间的第二类型间隙。形成掩模材料以相对于第二类型间隙选择性地填充第一类型的间隙。去除过量的掩模材料以留下图案化掩模。图案从图案化掩模转移到基底中。

10. 发明申请

US20140329179A1 METHODS OF FORMING SEMICONDUCTOR DEVICE STRUCTURES, AND RELATED SEMICONDUCTOR DEVICE STRUCTURES 有权
标题翻译：形成半导体器件结构的方法和相关半导体器件结构
公开(公告)号：US20140329179A1
公开(公告)日：2014-11-06
申请号：US13875918
申请日：2013-05-02
申请人： MICRON TECHNOLOGY, INC.
发明人： Ranjan Khurana , Gurpreet S. Lugani , Dan B. Millward
IPC分类号： G03F7/40
CPC分类号： G03F7/40 , G03F7/0002
摘要： A method of forming a semiconductor device structure comprises forming a template material over a substrate, the template material exhibiting preferential wetting to a polymer block of a block copolymer. A positive tone photoresist material is formed over the template material. The positive tone photoresist material is exposed to radiation to form photoexposed regions and non-photoexposed regions of the positive tone photoresist material. The non-photoexposed regions of the positive tone photoresist material are removed with a negative tone developer to form a pattern of photoresist features. The pattern of photoresist features and unprotected portions of the template material are exposed to an oxidizing plasma to form trimmed photoresist features and a pattern of template features. The trimmed photoresist features are removed with a positive tone developer. Other methods of forming a semiconductor device structure, and a semiconductor device structure are also described.
摘要翻译：形成半导体器件结构的方法包括在衬底上形成模板材料，该模板材料对嵌段共聚物的聚合物嵌段表现优先润湿。在模板材料上形成正色调光致抗蚀剂材料。正色光致抗蚀剂材料暴露于辐射以形成正色调光致抗蚀剂材料的光引射区域和非光照区域。用负色调显影剂除去正色调光致抗蚀剂材料的非光引射区域以形成光刻胶特征图案。模板材料的光致抗蚀剂特征图案和未保护部分的图案暴露于氧化等离子体以形成修整的光致抗蚀剂特征和模板特征图案。用正色调显影剂除去修剪的光致抗蚀剂特征。还描述了形成半导体器件结构的其它方法以及半导体器件结构。

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