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1. 发明授权

US5753939A Light-emitting semiconductor device using a Group III nitride compound and having a contact layer upon which an electrode is formed 失效
标题翻译：使用III族氮化物化合物并具有形成电极的接触层的发光半导体器件
公开(公告)号：US5753939A
公开(公告)日：1998-05-19
申请号：US813393
申请日：1997-03-07
申请人： Michinari Sassa , Naoki Shibata , Shinya Asami , Masayoshi Koike , Junichi Umezaki , Takahiro Kozawa
发明人： Michinari Sassa , Naoki Shibata , Shinya Asami , Masayoshi Koike , Junichi Umezaki , Takahiro Kozawa
IPC分类号： H01L21/205 , H01L33/02 , H01L33/32 , H01L33/38 , H01L33/40 , H01L33/00
CPC分类号： H01L33/38 , H01L33/025 , H01L33/32 , H01L33/325 , H01L33/382 , H01L2933/0016 , H01L33/40
摘要： A light-emitting semiconductor device having an improved metal electrode and semiconductor structure that lowers the driving voltage of the device. The device has a hetero p-n junction structure. This structure includes: (1) an n-layer having n-type conduction and a Group III nitride compound semiconductor satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0, and x=y=0; (2) a p-layer having p-type conduction and a Group III nitride compound semiconductor satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0, and x=y=0; and (3) an emission layer disposed between the n-layer and the p-layer. The device also has a metal electrode and a contact layer that is disposed between the p-layer and the metal electrode. The contact layer is doped with an acceptor impurity more heavily that is the p-layer. The acceptor impurity may be magnesium (Mg). The contact layer may be doped within the range of 1.times.10.sup.20 /cm.sup.3 to 1.times.10.sup.2l /cm.sup.3 and may comprise a first and a second contact layer.
摘要翻译：一种具有改善的金属电极和半导体结构的发光半导体器件，其降低了器件的驱动电压。该器件具有异质p-n结结构。该结构包括：（1）具有n型导电的n层和满足式Al x Ga y In 1-x-y N的III族氮化物半导体，包括x = 0，y = 0，x = y = 0; （2）具有p型导电的p层和满足式Al x Ga y In 1-x-y N的III族氮化物半导体，包括x = 0，y = 0，x = y = 0; 和（3）设置在n层和p层之间的发射层。该器件还具有设置在p层和金属电极之间的金属电极和接触层。接触层掺杂较多的受体杂质，即p层。受主杂质可以是镁（Mg）。接触层可以掺杂在1×10 20 / cm 3至1×102l / cm 3的范围内，并且可以包括第一和第二接触层。

2. 发明授权

US5650641A Semiconductor device having group III nitride compound and enabling control of emission color, and flat display comprising such device 失效
标题翻译：具有III族氮化物化合物并且能够控制发光颜色的半导体器件，以及包括这种器件的平面显示器
公开(公告)号：US5650641A
公开(公告)日：1997-07-22
申请号：US522110
申请日：1995-08-31
申请人： Michinari Sassa , Masayoshi Koike , Katsuhide Manabe , Norikatsu Koide , Hisaki Kato , Naoki Shibata , Makoto Asai , Shinya Asami
发明人： Michinari Sassa , Masayoshi Koike , Katsuhide Manabe , Norikatsu Koide , Hisaki Kato , Naoki Shibata , Makoto Asai , Shinya Asami
IPC分类号： H01L33/02 , H01L33/32 , H01L33/00
CPC分类号： H01L33/325 , H01L33/025
摘要： A light-emitting semiconductor device (100) suitable for use in multi-color flat panel displays includes a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n.sup.+ -layer (3) of high carrier (n-type) concentration, a Si-doped (Al.sub.x2 Ga.sub.1 -x.sub.2).sub.y2 In.sub.1-2 N n.sup.+ -layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped p-type (Al.sub.x1 Ga.sub.1-x1).sub.y1 In.sub.1-y1 N emission layer (5), and a Mg-doped (Al.sub.x2 Ga.sub.1-x2).sub.y2 In.sub.1-y2 N p-layer (6). The AlN layer (2) has a 500 .ANG. thickness. The GaN n.sup.+ -layer (3) is about a 2.0 .mu.m thick and has a 2.times.10.sup.18 /cm.sup.3 electron concentration. The n.sup.+ -layer (4) is about a 2.0 .mu.m in thickness and has a 2.times.10.sup.18 /cm.sup.3 electron concentration. The emission layer (5) is about 0.5 .mu.m thick. The p-layer 6 is about 1.0 .mu.m thick and has a 2.times.10.sup.17 /cm.sup.3 hole concentration. Nickel electrodes (7, 8) are connected to the p-layer (6) and n.sup.+ -layer (4), respectively. A groove (9) electrically insulates the electrodes (7, 8). Green light emission is obtained by this constitution. Further, only doping Zn of 5.times.10.sup.19 /cm.sup.3 into the emission layer (5) enables red light emission.
摘要翻译：适用于多色平板显示器的发光半导体器件（100）包括蓝宝石衬底（1），AlN缓冲层（2），掺杂硅（Si）的GaN n +层（3）载流子（n型）浓度，高载流子（n型）浓度的Si掺杂（Alx2Ga1-x2）y2In1-2Nn +层（4），锌（Zn）和掺杂Si的p型（Al x Ga 1 -x1）y1In1-y1N发射层（5）和Mg掺杂（Alx2Ga1-x2）y2In1-y2N p层（6）。 AlN层（2）具有500厚度。 GaN n +层（3）的厚度约为2.0μm，电子浓度为2×10 18 / cm 3。 n +层（4）的厚度约为2.0μm，电子浓度为2×10 18 / cm 3。发射层（5）厚约0.5μm。 p层6的厚度约为1.0μm，空穴浓度为2×10 17 / cm 3。镍电极（7,8）分别连接到p层（6）和n +层（4）。一个凹槽（9）使电极（7,8）电绝缘。通过这种结构获得绿色发光。此外，仅向发射层（5）掺杂5×10 19 / cm 3的Zn使得能够发红光。

3. 发明授权

US6040588A Semiconductor light-emitting device 失效
标题翻译：半导体发光装置
公开(公告)号：US6040588A
公开(公告)日：2000-03-21
申请号：US925325
申请日：1997-09-08
申请人： Norikatsu Koide , Shinya Asami , Junichi Umezaki , Masayoshi Koike , Shiro Yamasaki , Seiji Nagai
发明人： Norikatsu Koide , Shinya Asami , Junichi Umezaki , Masayoshi Koike , Shiro Yamasaki , Seiji Nagai
IPC分类号： H01L29/15 , H01L33/06 , H01L33/32 , H01L33/40 , H01S5/00 , H01S5/323 , H01S5/343 , H01L29/06 , H01L33/00
CPC分类号： H01L33/32 , B82Y20/00 , H01L29/155 , H01L33/06 , Y10S438/933
摘要： A semiconductor light-emitting device involving the steps of: forming a first semiconductor layer; forming a light-emitting layer of superlattice structure by laminating a barrier layer being made of In.sub.Y1 Ga.sub.1-Y1 N (Y1.gtoreq.0) and a quantum well layer being made of In.sub.Y2 Ga.sub.1-Y1 N (Y2>Y1 and Y2>0) on the first semiconductor layer; and forming a second semiconductor layer on the light-emitting layer, an uppermost barrier layer, which will become an uppermost layer of the light-emitting layer, is made thicker than the other barrier layers. Further, at the time of forming the second semiconductor layer, an upper surface of such uppermost barrier layer is caused to disappear so that the thickness of the uppermost barrier layer becomes substantially equal to those of the other barrier layers.
摘要翻译：一种半导体发光器件，包括以下步骤：形成第一半导体层; 通过层叠由InY1Ga1-Y1N（Y1> / = 0）构成的阻挡层和由InY2Ga1-Y1N（Y2> Y1和Y2> 0）构成的量子阱层，在第一层上形成超晶格结构的发光层半导体层; 并且在发光层上形成第二半导体层，使作为发光层的最上层的最上层的阻挡层比其他阻挡层厚。此外，在形成第二半导体层时，使最上层势垒层的上表面消失，使得最上阻挡层的厚度变得基本上等于其它势垒层的厚度。

4. 发明授权

US06326236B1 Semiconductor light-emitting device and manufacturing method thereof 有权
公开(公告)号：US06326236B1
公开(公告)日：2001-12-04
申请号：US09497814
申请日：2000-02-03
申请人： Norikatsu Koide , Shinya Asami , Junichi Umezaki , Masayoshi Koike , Shiro Yamasaki , Seiji Nagai
发明人： Norikatsu Koide , Shinya Asami , Junichi Umezaki , Masayoshi Koike , Shiro Yamasaki , Seiji Nagai
IPC分类号： H01L2144
CPC分类号： H01L33/32 , B82Y20/00 , H01L29/155 , H01L33/06 , Y10S438/933
摘要： In a method of manufacturing a semiconductor light-emitting device involving the steps of: forming a first semiconductor layer; forming a light-emitting layer of superlattice structure by laminating a barrier layer being made of InY1Ga1−Y1N (Y1≧0) and a quantum well layer being made of InY2Ga1−Y2N (Y2>Y1 and Y2>0) on the first semiconductor layer; and forming a second semiconductor layer on the light-emitting layer, an uppermost barrier layer, which will become an uppermost layer of the light-emitting layer, is made thicker than the other barrier layers. Further, at the time of forming the second semiconductor layer, an upper surface of such uppermost barrier layer is caused to disappear so that the thickness of the uppermost barrier layer becomes substantially equal to those of the other barrier layers.

5. 发明授权

US06821800B2 Semiconductor light-emitting device and manufacturing method thereof 失效
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US06821800B2
公开(公告)日：2004-11-23
申请号：US10326398
申请日：2002-12-23
申请人： Norikatsu Koide , Shinya Asami , Junichi Umezaki , Masayoshi Koike , Shiro Yamasaki , Seiji Nagai
发明人： Norikatsu Koide , Shinya Asami , Junichi Umezaki , Masayoshi Koike , Shiro Yamasaki , Seiji Nagai
IPC分类号： H01L2100
CPC分类号： H01L33/32 , B82Y20/00 , H01L29/155 , H01L33/06 , Y10S438/933
摘要： In a method of manufacturing a semiconductor light-emitting device involving the steps of: forming a first semiconductor layer; forming a light-emitting layer of superlattice structure by laminating a barrier layer being made of InY1Ga1-Y1N (Y1≧0) and a quantum well layer being made of InY2Ga1-Y2N (Y2>Y1 and Y2>0) on the first semiconductor layer; and forming a second semiconductor layer on the light-emitting layer, an uppermost barrier layer, which will become an uppermost layer of the light-emitting layer, is made thicker than the other barrier layers. Further, at the time of forming the second semiconductor layer, an upper surface of such uppermost barrier layer is caused to disappear so that the thickness of the uppermost barrier layer becomes substantially equal to those of the other barrier layers.
摘要翻译：在制造半导体发光器件的方法中，包括以下步骤：形成第一半导体层; 通过将由InY1Ga1-Y1N（Y1> = 0）构成的阻挡层和由InY2Ga1-Y2N（Y2> Y1和Y2> 0）构成的量子阱层层叠在第一半导体上形成超晶格结构的发光层层; 并且在发光层上形成第二半导体层，使作为发光层的最上层的最上层的阻挡层比其他阻挡层厚。此外，在形成第二半导体层时，使最上层势垒层的上表面消失，使得最上阻挡层的厚度变得基本上等于其它势垒层的厚度。

6. 发明授权

US06541293B2 Semiconductor light-emitting device and manufacturing method thereof 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US06541293B2
公开(公告)日：2003-04-01
申请号：US10158830
申请日：2002-06-03
申请人： Norikatsu Koide , Shinya Asami , Junichi Umezaki , Masayoshi Koike , Shiro Yamasaki , Seiji Nagai
发明人： Norikatsu Koide , Shinya Asami , Junichi Umezaki , Masayoshi Koike , Shiro Yamasaki , Seiji Nagai
IPC分类号： H01L2100
CPC分类号： H01L33/32 , B82Y20/00 , H01L29/155 , H01L33/06 , Y10S438/933
摘要： In a method of manufacturing a semiconductor light-emitting device involving the steps of: forming a first semiconductor layer; forming a light-emitting layer of superlattice structure by laminating a barrier layer being made of InY1Ga1−Y1N (Y1≧0) and a quantum well layer being made of InY2Ga1−Y2N (Y2>Y1 and Y2 >0) on the first semiconductor layer; and forming a second semiconductor layer on the light-emitting layer, an uppermost barrier layer, which will become an uppermost layer of the light-emitting layer, is made thicker than the other barrier layers. Further, at the time of forming the second semiconductor layer, an upper surface of such uppermost barrier layer is caused to disappear so that the thickness of the uppermost barrier layer becomes substantially equal to those of the other barrier layers.
摘要翻译：在制造半导体发光器件的方法中，包括以下步骤：形成第一半导体层; 通过将由InY1Ga1-Y1N（Y1> = 0）构成的阻挡层和由InY2Ga1-Y2N（Y2> Y1和Y2> 0）构成的量子阱层层叠在第一半导体上形成超晶格结构的发光层层; 并且在发光层上形成第二半导体层，使作为发光层的最上层的最上层的阻挡层比其他阻挡层厚。此外，在形成第二半导体层时，使最上层势垒层的上表面消失，使得最上阻挡层的厚度变得基本上等于其它势垒层的厚度。

7. 发明授权

US06420733B2 Semiconductor light-emitting device and manufacturing method thereof 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US06420733B2
公开(公告)日：2002-07-16
申请号：US09922687
申请日：2001-08-07
申请人： Norikatsu Koide , Shinya Asami , Junichi Umezaki , Masayoshi Koike , Shiro Yamasaki , Seiji Nagai
发明人： Norikatsu Koide , Shinya Asami , Junichi Umezaki , Masayoshi Koike , Shiro Yamasaki , Seiji Nagai
IPC分类号： H01L3300
CPC分类号： H01L33/32 , B82Y20/00 , H01L29/155 , H01L33/06 , Y10S438/933
摘要： In a method of manufacturing a semiconductor light-emitting device involving the steps of: forming a first semiconductor layer; forming a light-emitting layer of superlattice structure by laminating a barrier layer being made of InY1Ga1−Y1N (Y1≧0) and a quantum well layer being made of InY2Ga1−Y2N (Y2>Y1 and Y2>0) on the first semiconductor layer; and forming a second semiconductor layer on the light- emitting layer, an uppermost barrier layer, which will become an uppermost layer of the light-emitting layer, is made thicker than the other barrier layers. Further, at the time of forming the second semiconductor layer, an upper surface of such uppermost barrier layer is caused to disappear so that the thickness of the uppermost barrier layer becomes substantially equal to those of the other barrier layers.
摘要翻译：在制造半导体发光器件的方法中，包括以下步骤：形成第一半导体层; 通过将由InY1Ga1-Y1N（Y1> = 0）构成的阻挡层和由InY2Ga1-Y2N（Y2> Y1和Y2> 0）构成的量子阱层层叠在第一半导体上形成超晶格结构的发光层层; 并且在发光层上形成第二半导体层，使作为发光层的最上层的最上层的阻挡层比其他势垒层厚。此外，在形成第二半导体层时，使最上层势垒层的上表面消失，使得最上阻挡层的厚度变得基本上等于其它势垒层的厚度。

8. 发明授权

US5587593A Light-emitting semiconductor device using group III nitrogen compound 失效
标题翻译：使用III族氮化合物的发光半导体器件
公开(公告)号：US5587593A
公开(公告)日：1996-12-24
申请号：US423938
申请日：1995-04-19
申请人： Norikatsu Koide , Shiro Yamazaki , Junichi Umezaki , Shinya Asami
发明人： Norikatsu Koide , Shiro Yamazaki , Junichi Umezaki , Shinya Asami
IPC分类号： H01L33/12 , H01L33/16 , H01L33/32 , H01L33/00
CPC分类号： H01L33/325 , H01L33/16
摘要： A light-emitting semiconductor device includes a sapphire substrate whose main surface orientation is tilted by 1 to 4 degrees from its axis "a" , and layers epitaxially formed thereon. Tilting the surface orientation of the sapphire substrate enables uniform doping of a p-type impurity into the layers epitaxially grown thereon. As a result, the luminous intensity of the light-emitting semiconductor device is improved.
摘要翻译：发光半导体器件包括其主表面取向从其轴线“a”<11 + E，ov2 + EE0>倾斜1至4度的蓝宝石衬底，以及外延形成于其上的层。倾斜蓝宝石衬底的表面取向使得能够均匀地将p型杂质掺杂到其外延生长的层中。结果，提高了发光半导体器件的发光强度。

9. 发明授权

US5959401A Light-emitting semiconductor device using group III nitride compound 失效
标题翻译：使用III族氮化物化合物的发光半导体器件
公开(公告)号：US5959401A
公开(公告)日：1999-09-28
申请号：US861116
申请日：1997-05-21
申请人： Shinya Asami , Masayoshi Koike
发明人： Shinya Asami , Masayoshi Koike
IPC分类号： H01L33/06 , H01L33/32 , H01L33/42 , H01S5/343 , H01J1/62
CPC分类号： H01L33/32 , H01L33/325
摘要： A light-emitting semiconductor device consecutively includes a sapphire substrate, an AlN buffer layer, a silicon (Si) doped n.sup.+ -layer GaN, a Si-doped n-type GaN, a zinc (Zn) and Si-doped In.sub.0.20 Ga.sub.0.80 N emission layer, a magnesium (Mg) doped p-type Al.sub.0.08 Ga.sub.0.92 N layer as a cladding layer, an Mg-doped p-type GaN layer as a first contact layer, and an Mg-doped p.sup.+ -type GaN layer as a second contact layer. The cladding layer and the first and second contact layers have a total thickness of 10 nm to 150 nm which is thinner than that of a conventional p-layers by a half to one thirtieth. The emission layer is exposed to high growth temperature for 1.3 min. to 20 min. which is shorter than that of the conventional emission layer by a half to one thirtieth. As a result, crystallinity of the emission layer is improved, because it is prevented that In of the emission layer diffuses into the cladding and the contact layers, that N of the emission layer evaporates, and that Mg of the cladding and the contact layers diffuses into the emission layer.
摘要翻译：发光半导体器件连续地包括蓝宝石衬底，AlN缓冲层，掺杂硅（Si）的n +层GaN，Si掺杂的n型GaN，锌（Zn）和掺杂Si的In0.GaGa。 80N发射层，作为包覆层的Mg（Mg）掺杂的p型Al0.08Ga0.92N层，作为第一接触层的Mg掺杂的p型GaN层，以及Mg掺杂的p +型GaN层作为第二接触层。包覆层和第一和第二接触层的总厚度为10nm至150nm，其比常规p层薄至半至第三十分之一。发射层暴露于高生长温度1.3分钟。至20分钟其比常规发射层短一半至三十分之一。结果，发光层的结晶度提高，因为防止发光层的In扩散到包层和接触层中，发光层的N蒸发，并且包层和接触层的Mg扩散进入发射层。

10. 发明授权

US5945689A Light-emitting semiconductor device using group III nitride compound 失效
公开(公告)号：US5945689A
公开(公告)日：1999-08-31
申请号：US616884
申请日：1996-03-18
申请人： Masayoshi Koike , Shinya Asami
发明人： Masayoshi Koike , Shinya Asami
IPC分类号： H01L33/06 , H01L33/32 , H01L33/00
CPC分类号： H01L33/325 , B82Y20/00 , H01L33/06
摘要： An emission layer (5) for a light source device is formed to have a multi-layer structure, doped with an acceptor and a donor impurity. The multi-layer structure may include a quantum well (QW) structure or a multi quantum well (MQW) structure (50). With such a structure, a peak wavelength of the light source can be controlled, because the distances between atoms of the acceptor and the donor impurities are widened. Several arrangements can be made by, e.g., altering the thickness of each composite layer of the multi-layer structure, altering their composition ratio, forming undoped layer 5 between the impurity doped layers, and so forth. Further, luminous intensity of ultra violet color can be improved, because doping the donor impurity and the acceptor impurity realizes a donor-acceptor emission mechanism and abundant carriers. Several arrangements can be made by, e.g., optimizing the materials of the composite layers, optimizing their composition ratios, optimizing their lattice constants, and so forth to further enhance the luminous intensity of the light source.

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