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1. 发明授权

US5959401A Light-emitting semiconductor device using group III nitride compound 失效
标题翻译：使用III族氮化物化合物的发光半导体器件
公开(公告)号：US5959401A
公开(公告)日：1999-09-28
申请号：US861116
申请日：1997-05-21
申请人： Shinya Asami , Masayoshi Koike
发明人： Shinya Asami , Masayoshi Koike
IPC分类号： H01L33/06 , H01L33/32 , H01L33/42 , H01S5/343 , H01J1/62
CPC分类号： H01L33/32 , H01L33/325
摘要： A light-emitting semiconductor device consecutively includes a sapphire substrate, an AlN buffer layer, a silicon (Si) doped n.sup.+ -layer GaN, a Si-doped n-type GaN, a zinc (Zn) and Si-doped In.sub.0.20 Ga.sub.0.80 N emission layer, a magnesium (Mg) doped p-type Al.sub.0.08 Ga.sub.0.92 N layer as a cladding layer, an Mg-doped p-type GaN layer as a first contact layer, and an Mg-doped p.sup.+ -type GaN layer as a second contact layer. The cladding layer and the first and second contact layers have a total thickness of 10 nm to 150 nm which is thinner than that of a conventional p-layers by a half to one thirtieth. The emission layer is exposed to high growth temperature for 1.3 min. to 20 min. which is shorter than that of the conventional emission layer by a half to one thirtieth. As a result, crystallinity of the emission layer is improved, because it is prevented that In of the emission layer diffuses into the cladding and the contact layers, that N of the emission layer evaporates, and that Mg of the cladding and the contact layers diffuses into the emission layer.
摘要翻译：发光半导体器件连续地包括蓝宝石衬底，AlN缓冲层，掺杂硅（Si）的n +层GaN，Si掺杂的n型GaN，锌（Zn）和掺杂Si的In0.GaGa。 80N发射层，作为包覆层的Mg（Mg）掺杂的p型Al0.08Ga0.92N层，作为第一接触层的Mg掺杂的p型GaN层，以及Mg掺杂的p +型GaN层作为第二接触层。包覆层和第一和第二接触层的总厚度为10nm至150nm，其比常规p层薄至半至第三十分之一。发射层暴露于高生长温度1.3分钟。至20分钟其比常规发射层短一半至三十分之一。结果，发光层的结晶度提高，因为防止发光层的In扩散到包层和接触层中，发光层的N蒸发，并且包层和接触层的Mg扩散进入发射层。

2. 发明授权

US5945689A Light-emitting semiconductor device using group III nitride compound 失效
公开(公告)号：US5945689A
公开(公告)日：1999-08-31
申请号：US616884
申请日：1996-03-18
申请人： Masayoshi Koike , Shinya Asami
发明人： Masayoshi Koike , Shinya Asami
IPC分类号： H01L33/06 , H01L33/32 , H01L33/00
CPC分类号： H01L33/325 , B82Y20/00 , H01L33/06
摘要： An emission layer (5) for a light source device is formed to have a multi-layer structure, doped with an acceptor and a donor impurity. The multi-layer structure may include a quantum well (QW) structure or a multi quantum well (MQW) structure (50). With such a structure, a peak wavelength of the light source can be controlled, because the distances between atoms of the acceptor and the donor impurities are widened. Several arrangements can be made by, e.g., altering the thickness of each composite layer of the multi-layer structure, altering their composition ratio, forming undoped layer 5 between the impurity doped layers, and so forth. Further, luminous intensity of ultra violet color can be improved, because doping the donor impurity and the acceptor impurity realizes a donor-acceptor emission mechanism and abundant carriers. Several arrangements can be made by, e.g., optimizing the materials of the composite layers, optimizing their composition ratios, optimizing their lattice constants, and so forth to further enhance the luminous intensity of the light source.

3. 发明授权

US06645785B2 Light-emitting semiconductor device using group III nitride compound 失效
标题翻译：使用III族氮化物化合物的发光半导体器件
公开(公告)号：US06645785B2
公开(公告)日：2003-11-11
申请号：US09909895
申请日：2001-07-23
申请人： Masayoshi Koike , Shinya Asami
发明人： Masayoshi Koike , Shinya Asami
IPC分类号： H01L2100
CPC分类号： H01L33/325 , B82Y20/00 , H01L33/06
摘要： An emission layer (5) for a light source device is formed to have a multi-layer structure, doped with an acceptor and a donor impurity. The multi-layer structure may include a quantum well (QW) structure or a multi quantum well (MQW) structure (50). With such a structure, a peak wavelength of the light source can be controlled, because the distances between atoms of the acceptor and the donor impurities are widened. Several arrangements can be made by, e.g., altering the thickness of each composite layer of the multi-layer structure, altering their composition ratio, forming undoped layer 5 between the impurity doped layers, and so forth. Further, luminous intensity of ultra violet color can be improved, because doping the donor impurity and the acceptor impurity realizes a donor-acceptor emission mechanism and abundant carriers. Several arrangements can be made by, e.g., optimizing the materials of the composite layers, optimizing their composition ratios, optimizing their lattice constants, and so forth to further enhance the luminous intensity of the light source.
摘要翻译：用于光源器件的发射层（5）形成为具有掺杂有受主和施主杂质的多层结构。多层结构可以包括量子阱（QW）结构或多量子阱（MQW）结构（50）。通过这样的结构，可以控制光源的峰值波长，因为受主的原子与供体杂质之间的距离变宽。可以通过例如改变多层结构的每个复合层的厚度，改变它们的组成比，在杂质掺杂层之间形成未掺杂的层5等来进行几种布置。此外，可以提高紫外线的发光强度，因为掺杂施主杂质和受主杂质实现了供体 - 受体发射机制和丰富的载体。可以通过例如优化复合层的材料，优化其组成比，优化其晶格常数等来进行若干布置，以进一步增强光源的发光强度。

4. 发明授权

US6040588A Semiconductor light-emitting device 失效
标题翻译：半导体发光装置
公开(公告)号：US6040588A
公开(公告)日：2000-03-21
申请号：US925325
申请日：1997-09-08
申请人： Norikatsu Koide , Shinya Asami , Junichi Umezaki , Masayoshi Koike , Shiro Yamasaki , Seiji Nagai
发明人： Norikatsu Koide , Shinya Asami , Junichi Umezaki , Masayoshi Koike , Shiro Yamasaki , Seiji Nagai
IPC分类号： H01L29/15 , H01L33/06 , H01L33/32 , H01L33/40 , H01S5/00 , H01S5/323 , H01S5/343 , H01L29/06 , H01L33/00
CPC分类号： H01L33/32 , B82Y20/00 , H01L29/155 , H01L33/06 , Y10S438/933
摘要： A semiconductor light-emitting device involving the steps of: forming a first semiconductor layer; forming a light-emitting layer of superlattice structure by laminating a barrier layer being made of In.sub.Y1 Ga.sub.1-Y1 N (Y1.gtoreq.0) and a quantum well layer being made of In.sub.Y2 Ga.sub.1-Y1 N (Y2>Y1 and Y2>0) on the first semiconductor layer; and forming a second semiconductor layer on the light-emitting layer, an uppermost barrier layer, which will become an uppermost layer of the light-emitting layer, is made thicker than the other barrier layers. Further, at the time of forming the second semiconductor layer, an upper surface of such uppermost barrier layer is caused to disappear so that the thickness of the uppermost barrier layer becomes substantially equal to those of the other barrier layers.
摘要翻译：一种半导体发光器件，包括以下步骤：形成第一半导体层; 通过层叠由InY1Ga1-Y1N（Y1> / = 0）构成的阻挡层和由InY2Ga1-Y1N（Y2> Y1和Y2> 0）构成的量子阱层，在第一层上形成超晶格结构的发光层半导体层; 并且在发光层上形成第二半导体层，使作为发光层的最上层的最上层的阻挡层比其他阻挡层厚。此外，在形成第二半导体层时，使最上层势垒层的上表面消失，使得最上阻挡层的厚度变得基本上等于其它势垒层的厚度。

5. 发明授权

US5753939A Light-emitting semiconductor device using a Group III nitride compound and having a contact layer upon which an electrode is formed 失效
标题翻译：使用III族氮化物化合物并具有形成电极的接触层的发光半导体器件
公开(公告)号：US5753939A
公开(公告)日：1998-05-19
申请号：US813393
申请日：1997-03-07
申请人： Michinari Sassa , Naoki Shibata , Shinya Asami , Masayoshi Koike , Junichi Umezaki , Takahiro Kozawa
发明人： Michinari Sassa , Naoki Shibata , Shinya Asami , Masayoshi Koike , Junichi Umezaki , Takahiro Kozawa
IPC分类号： H01L21/205 , H01L33/02 , H01L33/32 , H01L33/38 , H01L33/40 , H01L33/00
CPC分类号： H01L33/38 , H01L33/025 , H01L33/32 , H01L33/325 , H01L33/382 , H01L2933/0016 , H01L33/40
摘要： A light-emitting semiconductor device having an improved metal electrode and semiconductor structure that lowers the driving voltage of the device. The device has a hetero p-n junction structure. This structure includes: (1) an n-layer having n-type conduction and a Group III nitride compound semiconductor satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0, and x=y=0; (2) a p-layer having p-type conduction and a Group III nitride compound semiconductor satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0, and x=y=0; and (3) an emission layer disposed between the n-layer and the p-layer. The device also has a metal electrode and a contact layer that is disposed between the p-layer and the metal electrode. The contact layer is doped with an acceptor impurity more heavily that is the p-layer. The acceptor impurity may be magnesium (Mg). The contact layer may be doped within the range of 1.times.10.sup.20 /cm.sup.3 to 1.times.10.sup.2l /cm.sup.3 and may comprise a first and a second contact layer.
摘要翻译：一种具有改善的金属电极和半导体结构的发光半导体器件，其降低了器件的驱动电压。该器件具有异质p-n结结构。该结构包括：（1）具有n型导电的n层和满足式Al x Ga y In 1-x-y N的III族氮化物半导体，包括x = 0，y = 0，x = y = 0; （2）具有p型导电的p层和满足式Al x Ga y In 1-x-y N的III族氮化物半导体，包括x = 0，y = 0，x = y = 0; 和（3）设置在n层和p层之间的发射层。该器件还具有设置在p层和金属电极之间的金属电极和接触层。接触层掺杂较多的受体杂质，即p层。受主杂质可以是镁（Mg）。接触层可以掺杂在1×10 20 / cm 3至1×102l / cm 3的范围内，并且可以包括第一和第二接触层。

6. 发明授权

US06326236B1 Semiconductor light-emitting device and manufacturing method thereof 有权
公开(公告)号：US06326236B1
公开(公告)日：2001-12-04
申请号：US09497814
申请日：2000-02-03
申请人： Norikatsu Koide , Shinya Asami , Junichi Umezaki , Masayoshi Koike , Shiro Yamasaki , Seiji Nagai
发明人： Norikatsu Koide , Shinya Asami , Junichi Umezaki , Masayoshi Koike , Shiro Yamasaki , Seiji Nagai
IPC分类号： H01L2144
CPC分类号： H01L33/32 , B82Y20/00 , H01L29/155 , H01L33/06 , Y10S438/933
摘要： In a method of manufacturing a semiconductor light-emitting device involving the steps of: forming a first semiconductor layer; forming a light-emitting layer of superlattice structure by laminating a barrier layer being made of InY1Ga1−Y1N (Y1≧0) and a quantum well layer being made of InY2Ga1−Y2N (Y2>Y1 and Y2>0) on the first semiconductor layer; and forming a second semiconductor layer on the light-emitting layer, an uppermost barrier layer, which will become an uppermost layer of the light-emitting layer, is made thicker than the other barrier layers. Further, at the time of forming the second semiconductor layer, an upper surface of such uppermost barrier layer is caused to disappear so that the thickness of the uppermost barrier layer becomes substantially equal to those of the other barrier layers.

7. 发明授权

US06288416B1 Light-emitting semiconductor device using group III nitride compound 失效
公开(公告)号：US06288416B1
公开(公告)日：2001-09-11
申请号：US09346935
申请日：1999-07-02
申请人： Masayoshi Koike , Shinya Asami
发明人： Masayoshi Koike , Shinya Asami
IPC分类号： H01L3300
CPC分类号： H01L33/325 , B82Y20/00 , H01L33/06
摘要： An emission layer (5) for a light source device is formed to have a multi-layer structure, doped with an acceptor and a donor impurity. The multi-layer structure may include a quantum well (QW) structure or a multi quantum well (MQW) structure (50). With such a structure, a peak wavelength of the light source can be controlled, because the distances between atoms of the acceptor and the donor impurities are widened. Several arrangements can be made by, e.g., altering the thickness of each composite layer of the multi-layer structure, altering their composition ratio, forming undoped layer 5 between the impurity doped layers, and so forth. Further, luminous intensity of ultra violet color can be improved, because doping the donor impurity and the acceptor impurity realizes a donor-acceptor emission mechanism and abundant carriers. Several arrangements can be made by, e.g., optimizing the materials of the composite layers, optimizing their composition ratios, optimizing their lattice constants, and so forth to further enhance the luminous intensity of the light source.

8. 发明授权

US07045829B2 Light-emitting semiconductor device using Group III nitride compound 失效
标题翻译：使用III族氮化物的发光半导体器件
公开(公告)号：US07045829B2
公开(公告)日：2006-05-16
申请号：US08681412
申请日：1996-07-23
申请人： Masayoshi Koike , Shinya Asami
发明人： Masayoshi Koike , Shinya Asami
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01S5/3213 , H01S5/32341
摘要： A Group III nitride compound semiconductor includes a multiple layer structure having an emission layer between an n-type cladding layer and a p-type cladding layer. The n-type cladding layer may be below the emission layer, having been formed on another n-type layer which was formed over a buffer Layer and a sapphire substrate. The emission layer has a thickness which is wider than the diffusion length of holes within the emission layer. The n-type cladding layer is doped with a donor impurity and has a lattice constant Substantially equal to a lattice constant of the emission layer. The p-type cladding layer is doped with an acceptor impurity and has a forbidden band sufficiently wider than the forbidden band of the emission layer in ordor to confine electrons injected into the emission layer.
摘要翻译： III族氮化物化合物半导体包括在n型包覆层和p型包覆层之间具有发射层的多层结构。 n型覆层可以在形成在缓冲层和蓝宝石衬底上的另一n型层上形成的发光层之下。发光层的厚度比发光层内的孔的扩散长度宽。 n型包覆层掺杂有施主杂质，其晶格常数基本上等于发光层的晶格常数。 p型覆层被掺杂有受主杂质，并且具有比限制发射层中的发射层的禁带宽度更宽的禁带，以限制注入到发射层中的电子。

9. 发明授权

US06821800B2 Semiconductor light-emitting device and manufacturing method thereof 失效
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US06821800B2
公开(公告)日：2004-11-23
申请号：US10326398
申请日：2002-12-23
申请人： Norikatsu Koide , Shinya Asami , Junichi Umezaki , Masayoshi Koike , Shiro Yamasaki , Seiji Nagai
发明人： Norikatsu Koide , Shinya Asami , Junichi Umezaki , Masayoshi Koike , Shiro Yamasaki , Seiji Nagai
IPC分类号： H01L2100
CPC分类号： H01L33/32 , B82Y20/00 , H01L29/155 , H01L33/06 , Y10S438/933
摘要： In a method of manufacturing a semiconductor light-emitting device involving the steps of: forming a first semiconductor layer; forming a light-emitting layer of superlattice structure by laminating a barrier layer being made of InY1Ga1-Y1N (Y1≧0) and a quantum well layer being made of InY2Ga1-Y2N (Y2>Y1 and Y2>0) on the first semiconductor layer; and forming a second semiconductor layer on the light-emitting layer, an uppermost barrier layer, which will become an uppermost layer of the light-emitting layer, is made thicker than the other barrier layers. Further, at the time of forming the second semiconductor layer, an upper surface of such uppermost barrier layer is caused to disappear so that the thickness of the uppermost barrier layer becomes substantially equal to those of the other barrier layers.
摘要翻译：在制造半导体发光器件的方法中，包括以下步骤：形成第一半导体层; 通过将由InY1Ga1-Y1N（Y1> = 0）构成的阻挡层和由InY2Ga1-Y2N（Y2> Y1和Y2> 0）构成的量子阱层层叠在第一半导体上形成超晶格结构的发光层层; 并且在发光层上形成第二半导体层，使作为发光层的最上层的最上层的阻挡层比其他阻挡层厚。此外，在形成第二半导体层时，使最上层势垒层的上表面消失，使得最上阻挡层的厚度变得基本上等于其它势垒层的厚度。

10. 发明授权

US06541293B2 Semiconductor light-emitting device and manufacturing method thereof 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US06541293B2
公开(公告)日：2003-04-01
申请号：US10158830
申请日：2002-06-03
申请人： Norikatsu Koide , Shinya Asami , Junichi Umezaki , Masayoshi Koike , Shiro Yamasaki , Seiji Nagai
发明人： Norikatsu Koide , Shinya Asami , Junichi Umezaki , Masayoshi Koike , Shiro Yamasaki , Seiji Nagai
IPC分类号： H01L2100
CPC分类号： H01L33/32 , B82Y20/00 , H01L29/155 , H01L33/06 , Y10S438/933
摘要： In a method of manufacturing a semiconductor light-emitting device involving the steps of: forming a first semiconductor layer; forming a light-emitting layer of superlattice structure by laminating a barrier layer being made of InY1Ga1−Y1N (Y1≧0) and a quantum well layer being made of InY2Ga1−Y2N (Y2>Y1 and Y2 >0) on the first semiconductor layer; and forming a second semiconductor layer on the light-emitting layer, an uppermost barrier layer, which will become an uppermost layer of the light-emitting layer, is made thicker than the other barrier layers. Further, at the time of forming the second semiconductor layer, an upper surface of such uppermost barrier layer is caused to disappear so that the thickness of the uppermost barrier layer becomes substantially equal to those of the other barrier layers.
摘要翻译：在制造半导体发光器件的方法中，包括以下步骤：形成第一半导体层; 通过将由InY1Ga1-Y1N（Y1> = 0）构成的阻挡层和由InY2Ga1-Y2N（Y2> Y1和Y2> 0）构成的量子阱层层叠在第一半导体上形成超晶格结构的发光层层; 并且在发光层上形成第二半导体层，使作为发光层的最上层的最上层的阻挡层比其他阻挡层厚。此外，在形成第二半导体层时，使最上层势垒层的上表面消失，使得最上阻挡层的厚度变得基本上等于其它势垒层的厚度。

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