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1. 发明授权

US4361887A Semiconductor light emitting element 失效
标题翻译：半导体发光元件
公开(公告)号：US4361887A
公开(公告)日：1982-11-30
申请号：US125779
申请日：1980-02-29
申请人： Michiharu Nakamura , Motohisa Hirao , Shigeo Yamashita , Tadashi Fukuzawa , Junichi Umeda
发明人： Michiharu Nakamura , Motohisa Hirao , Shigeo Yamashita , Tadashi Fukuzawa , Junichi Umeda
IPC分类号： H01L29/80 , H01L21/338 , H01L27/095 , H01L27/15 , H01L29/812 , H01S5/00 , H01S5/026 , H01S5/042 , H01S3/19
CPC分类号： H01S5/0265
摘要： A semiconductor laser light emitting element comprises a semiconductor substrate, a laminate region of semiconductor layers having at least a first, a second and a third semiconductor layer formed over the substrate and having a p-n junction defined therein. The first and third semiconductor layers have smaller refractive indices and greater forbidden band gaps than the second semiconductor layer and are opposite in conductivity type to each other. Provided are on the substrate a field effect transistor section having first and second electrodes and a gate electrode disposed between the first and second electrodes, a means for serving as an optical resonator for emitting light in the lengthwise direction of the p-n junction. A means is formed on one surface of the laminate region for injecting current into the third semiconductor layer, the current injection means is short-circuited with the first electrode of the field transistor section and a means is formed on the substrate for receiving the current injected from the current injecting means.
摘要翻译：半导体激光发光元件包括半导体衬底，半导体层的层叠区域，其至少形成在衬底上并具有限定在其中的p-n结的第一，第二和第三半导体层。第一和第三半导体层具有比第二半导体层更小的折射率和更大的禁带宽度，并且与导电类型相反。在基板上设置有具有第一和第二电极的场效应晶体管部分和设置在第一和第二电极之间的栅电极，用作用于在p-n结的长度方向上发光的光谐振器的装置。在层叠区域的一个表面上形成用于将电流注入到第三半导体层中的装置，电流注入装置与场晶体管部分的第一电极短路，并且在基板上形成用于接收注入电流的装置从目前的注射手段。

2. 发明授权

US4775980A Distributed-feedback semiconductor laser device 失效
标题翻译：分布式反馈半导体激光器件
公开(公告)号：US4775980A
公开(公告)日：1988-10-04
申请号：US759136
申请日：1985-07-26
申请人： Naoki Chinone , Shinji Tsuji , Yoshihisa Fujisaki , Yasutoshi Kashiwada , Motohisa Hirao , Hitoshi Nakamura , Akio Oishi , Kenji Hiruma , Tadashi Fukuzawa , Hiroyoshi Matumura
发明人： Naoki Chinone , Shinji Tsuji , Yoshihisa Fujisaki , Yasutoshi Kashiwada , Motohisa Hirao , Hitoshi Nakamura , Akio Oishi , Kenji Hiruma , Tadashi Fukuzawa , Hiroyoshi Matumura
IPC分类号： H01S5/10 , H01S5/12 , H01S5/183 , H01S3/08 , H01S3/19
CPC分类号： H01S5/18305 , H01S5/12 , H01S5/106 , H01S5/1206 , H01S5/1215 , H01S5/1225 , H01S5/18308 , H01S5/2072
摘要： A distributed feedback semiconductor laser provided with a grating which effects optical feedback by means of periodic corrugation disposed inside an optical resonator. The optical resonator has at least two regions having different Bragg wavelengths, and these regions are arranged longitudinally in the direction of an optical axis. The laser device can realize stable single longitudinal mode oscillation through variation of the refractive indexes of the regions nonuniformly around an average value.
摘要翻译：一种配置有光栅的分布式反馈半导体激光器，其通过设置在光学谐振器内部的周期性波纹来实现光学反馈。光谐振器具有至少两个具有不同布拉格波长的区域，并且这些区域沿光轴方向纵向布置。激光装置可以通过使区域的折射率不均匀地围绕平均值变化来实现稳定的单纵模振荡。

3. 发明授权

US4366567A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US4366567A
公开(公告)日：1982-12-28
申请号：US204231
申请日：1980-11-05
申请人： Tadashi Fukuzawa , Michiharu Nakamura , Susumu Takahashi
发明人： Tadashi Fukuzawa , Michiharu Nakamura , Susumu Takahashi
IPC分类号： H01L27/15 , H01S5/00 , H01S5/026 , H01S5/062 , H01S5/0625 , H01S3/19
CPC分类号： H01S5/0625 , H01S5/0261 , H01S5/06213
摘要： Disclosed is a semiconductor laser device comprising a layered semiconductor region capable of laser oscillation and including at least an optical confinement region consisting of stacked semiconductor layers, means for injecting current into the optical confinement region, and means for constructing an optical resonator; switching means for supplying the layered semiconductor region capable of laser oscillation with a current having a value near a threshold current value for the laser oscillation; and switching means for feeding a current to be superposed on the current supplied to the layered semiconductor region capable of laser oscillation, this switching means being capable of controlling the current to be superposed through an external input thereof.
摘要翻译：公开了一种半导体激光器件，其包括能够进行激光振荡的层状半导体区域，并且至少包括由堆叠半导体层构成的光限制区域，用于将电流注入光限制区域的装置以及用于构造光学谐振器的装置; 切换装置，用于以激光振荡的阈值电流值附近的电流供给能够进行激光振荡的分层半导体区域; 以及切换装置，用于馈送要叠加在提供给能够激光振荡的层状半导体区域的电流上的电流，该切换装置能够通过其外部输入来控制要叠加的电流。

4. 发明授权

US4772925A High speed switching field effect transistor 失效
标题翻译：高速开关场效应晶体管
公开(公告)号：US4772925A
公开(公告)日：1988-09-20
申请号：US935171
申请日：1986-11-26
申请人： Tadashi Fukuzawa , Ken Yamaguchi , Susumu Takahashi , Hisao Nakashima , Michiharu Nakamura
发明人： Tadashi Fukuzawa , Ken Yamaguchi , Susumu Takahashi , Hisao Nakashima , Michiharu Nakamura
IPC分类号： H01L29/80 , H01L21/331 , H01L21/338 , H01L29/10 , H01L29/73 , H01L29/778 , H01L29/812 , H01L27/12 , H01L29/161 , H01L29/205
CPC分类号： H01L29/7783 , H01L29/1075
摘要： The semiconductor device of this invention consists at least of a laminate of a semi-insulating or p-type first semiconductor layer having a forbidden band width E.sub.g1, an undoped or p.sup.- -type second semiconductor layer having a forbidden band width E.sub.g2 and an n-type third semiconductor layer having forbidden band width E.sub.g3. The laminate is deposited on a predetermined semiconductor substrate and the forbidden band width has the relation E.sub.g2
摘要翻译：本发明的半导体器件至少包括具有禁带宽度Eg1的半绝缘或p型第一半导体层的层压体，具有禁带宽度Eg2的未掺杂或p型第二半导体层，以及n 具有禁带宽度Eg3的第三半导体层。层压体沉积在预定的半导体衬底上，禁带宽度具有关系Eg2

5. 发明授权

US4430741A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US4430741A
公开(公告)日：1984-02-07
申请号：US225399
申请日：1981-01-15
申请人： Tadashi Fukuzawa , Michiharu Nakamura , Susumu Takahashi
发明人： Tadashi Fukuzawa , Michiharu Nakamura , Susumu Takahashi
IPC分类号： H01S5/00 , H01L27/15 , H01S5/026 , H01S5/06 , H01S5/062 , H01S5/227 , H01S3/19
CPC分类号： H01S5/06203 , H01L27/15 , H01S5/227 , H01S5/0622 , H01S5/2275
摘要： Disclosed is a semiconductor laser device comprising a semiconductor assembly which serves to effect laser oscillation and in which first, second and third semiconductor layers are successively stacked on a predetermined semiconductor body, at least the first and third semiconductor layers being small in the refractive index relative to the second semiconductor layer and great in the forbidden band gap relative thereto and having conductivity types opposite to each other, and means to spread depletion regions within at least a part of a current path for effecting the laser oscillation and in a manner to intersect with the current path. A small-sized semiconductor laser device capable of fast modulation can be realized.
摘要翻译：公开了一种半导体激光器件，其包括用于实现激光振荡的半导体组件，并且其中第一，第二和第三半导体层被连续堆叠在预定半导体本体上，至少第一和第三半导体层的折射率相对较小并且相对于第二半导体层具有大的禁带宽度，并且具有彼此相反的导电类型，以及在电流路径的至少一部分内扩散耗尽区以实现激光振荡并以与当前路径。能够实现能够进行快速调制的小型半导体激光装置。

6. 发明授权

US5001536A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US5001536A
公开(公告)日：1991-03-19
申请号：US298764
申请日：1989-01-17
申请人： Tadashi Fukuzawa , Michiharu Nakamura , Eizaburo Yamada
发明人： Tadashi Fukuzawa , Michiharu Nakamura , Eizaburo Yamada
IPC分类号： H01L27/06 , H01L29/267 , H01L29/51 , H01L29/778
CPC分类号： H01L29/517 , H01L27/0605 , H01L29/267 , H01L29/7783 , H01L29/7787
摘要： In a semiconductor device having, at least, a first semiconductor layer which contains substantially no impurity, a second semiconductor layer which has a band gap greater than that of the first semiconductor layer and which contains an impurity, an interface between the first and second semiconductor layers forming a heterojunction, at least one pair of electrodes which are electronically connected with the first semiconductor layer, and means to control carriers developing at the heterojunction interface; a semiconductor device characterized in that the first semiconductor layer is a Ge layer, while the second semiconductor layer is a group III-V compound semiconductor layer.
摘要翻译：在具有至少包含基本上不含杂质的第一半导体层的半导体器件中，具有大于第一半导体层的带隙的第二半导体层并且含有杂质的第二半导体层在第一和第二半导体之间的界面形成异质结的层，与第一半导体层电子连接的至少一对电极，以及控制在异质结界面处显影的载体的装置; 其特征在于，所述第一半导体层为Ge层，所述第二半导体层为III-V族化合物半导体层。

7. 发明申请

US20070137254A1 OPTICAL TRANSMISSION SUBSTRATE, METHOD FOR MANUFACTURING OPTICAL TRANSMISSION SUBSTRATE AND OPTOELECTRONIC INTEGRATED CIRCUIT 有权
标题翻译：光传输基板，制造光传输基板和光电集成电路的方法
公开(公告)号：US20070137254A1
公开(公告)日：2007-06-21
申请号：US11679460
申请日：2007-02-27
申请人： Tadashi Fukuzawa , Masaki Hasegawa
发明人： Tadashi Fukuzawa , Masaki Hasegawa
IPC分类号： C03B37/022
CPC分类号： G02B6/30 , G02B6/125 , G02B6/4214 , G02B6/43 , G02B2006/12104 , H05K1/0274 , H05K1/144
摘要： Provided is an optical transmission substrate including: a first substrate; an optical waveguide which has clad covering a core and a periphery of the core and extends on an upper surface of the first substrate; a second substrate provided parallel to the first substrate so that a lower surface thereof contacts an upper surface of the optical waveguide; a reflection surface which is provided on a cross section of the core at an end of the optical waveguide and reflects light, which travels through the core of the optical waveguide, toward the second substrate; and a light guide which is provided in the second substrate and guides the light, which is reflected toward the second substrate, toward an upper surface of the second substrate from a position closer to the core than an upper surface of the clad.
摘要翻译：提供一种光传输基板，包括：第一基板; 光波导，其具有包覆芯和芯的周边并且在第一基板的上表面上延伸的光导体; 第二基板，其平行于第一基板设置，使得其下表面接触光波导的上表面; 在所述光波导的端部设置在所述芯的截面上并反射穿过所述光波导的芯的光朝向所述第二基板的反射面; 以及导光体，其设置在所述第二基板中，并且从所述包层的上表面的距离更靠近所述芯的位置将从所述第二基板反射的光导向所述第二基板的上表面。

8. 发明申请

US20050284180A1 Optical link module, optical interconnection method, information processor including the optical link module, signal transfer method, prism and method of manufacturing the prism 失效
公开(公告)号：US20050284180A1
公开(公告)日：2005-12-29
申请号：US11151890
申请日：2005-06-13
申请人： Kazuo Sekiya , Tadashi Fukuzawa
发明人： Kazuo Sekiya , Tadashi Fukuzawa
IPC分类号： G02B6/32 , G02B6/38 , G02B6/42 , G02B6/43 , H01L31/0232 , H01L33/00 , H01L33/08 , H01L33/58 , H01S5/022 , C03B19/00
CPC分类号： G02B6/4209 , G02B6/32 , G02B6/3885 , G02B6/4214 , G02B6/4249 , G02B6/4292 , G02B6/43
摘要： An optical link module of the present invention for connecting light beams by deflection and including light-emitting devices arranged in a planar manner; an optical fiber bundle that is an optical waveguide for receiving the light beams from the light-emitting devices, and an optical turn which includes a plurality of aspherical lenses which are disposed between the light-emitting devices and the optical fiber bundle and are formed while corresponding to the number of the light-emitting devices and the number of optical fibers.

9. 发明授权

US4881235A Semiconductor laser having a multiple quantum well structure doped with impurities 失效
标题翻译：具有掺杂有杂质的多量子阱结构的半导体激光器
公开(公告)号：US4881235A
公开(公告)日：1989-11-14
申请号：US41410
申请日：1987-04-23
申请人： Naoki Chinone , Kazuhisa Uomi , Tadashi Fukuzawa , Hideaki Matsueda , Takashi Kajimura , Tsukuru Ohtoshi
发明人： Naoki Chinone , Kazuhisa Uomi , Tadashi Fukuzawa , Hideaki Matsueda , Takashi Kajimura , Tsukuru Ohtoshi
IPC分类号： H01S5/227 , H01S5/34
CPC分类号： B82Y20/00 , H01S5/227 , H01S5/34 , H01S5/2275 , H01S5/309 , H01S5/3407 , Y10S372/704
摘要： In a well-known semiconductor laser, a multiple quantum well type active layer consisting of barrier layers and active layers or well layers, each of which has a thickness less than the de Broglie wavelength of electrons, is doped with an impurity, and the impurity density is made higher in the barrier layer than in the well layer. Further, in a case where the multiple quantum well active layer is held between p-type and n-type cladding layers, the well layer is undoped, the part of the barrier layer lying in contact with the well layer is undoped, and the other part of the barrier layer close to the p-type cladding layer is put into the n-conductivity type while that of the barrier layer close to the n-type cladding layer is put into the n-conductivity type. Desirably, the impurity density should range from about 1.times.10.sup.18 to about 1.times.10.sup.19 cm.sup.- 3.
摘要翻译：在众所周知的半导体激光器中，掺杂有杂质的由势垒层和活性层或阱层构成的多量子阱型有源层的厚度小于电子的德布罗意波长，在阻挡层中的密度比井层中的密度高。此外，在多量子阱活性层保持在p型和n型覆层之间的情况下，阱层未掺杂，阻挡层与阱层接触的部分未掺杂，另一方面靠近p型包层的阻挡层的一部分被放入n导电型，而靠近n型包覆层的势垒层的部分被放入n导电型。理想地，杂质密度应在约1×1018至约1×1019cm-3的范围内。

10. 发明授权

US4835578A Semiconductor device having a quantum wire and a method of producing the same 失效
标题翻译：具有量子线的半导体装置及其制造方法
公开(公告)号：US4835578A
公开(公告)日：1989-05-30
申请号：US139791
申请日：1987-12-30
申请人： Tsukuru Ohtoshi , Kazuhisa Uomi , Tadashi Fukuzawa , Naoki Chinone
发明人： Tsukuru Ohtoshi , Kazuhisa Uomi , Tadashi Fukuzawa , Naoki Chinone
IPC分类号： H01L27/15 , B82Y10/00 , B82Y20/00 , H01L21/335 , H01L29/06 , H01L29/15 , H01L29/205 , H01L29/775 , H01L29/80 , H01S5/00 , H01S5/34
CPC分类号： H01L33/24 , B82Y10/00 , B82Y20/00 , H01L29/151 , H01L29/205 , H01L29/66469 , H01L29/775 , H01L33/06 , H01S5/341
摘要： A semiconductor device comprises a first superlattice layer consisting of a first semiconductor layer that contains impurities and a second semiconductor layer that contains impurities at a low concentration, said first superlattice layer being formed on a semiconductor substrate; and a second superlattice layer that covers that exposed side walls of said first superlattice layer. A disordered region is formed in the vicinity of the first semiconductor layer of the second superlattice layer in order to realize quantum wires with the conventional manufacturing process. This makes it possible to easily fabricate a laser device, a light-emitting diode and a transistor having quantum wires to enhance their performance.
摘要翻译：半导体器件包括由含有杂质的第一半导体层和含有低浓度杂质的第二半导体层构成的第一超晶格层，所述第一超晶格层形成在半导体衬底上; 以及覆盖所述第一超晶格层的暴露侧壁的第二超晶格层。在第二超晶格层的第一半导体层附近形成无序区域，以通过常规制造工艺实现量子线。这使得可以容易地制造激光器件，发光二极管和具有量子线的晶体管以增强它们的性能。

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