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1. 发明授权

US5478774A Method of fabricating patterned-mirror VCSELs using selective growth 失效
标题翻译：使用选择性生长制造图案镜VCSEL的方法
公开(公告)号：US5478774A
公开(公告)日：1995-12-26
申请号：US261276
申请日：1994-06-15
申请人： Donald E. Ackley , Piotr Grodzinski , Michael S. Lebby , Hsing-Chung Lee , Chan-Long Shieh
发明人： Donald E. Ackley , Piotr Grodzinski , Michael S. Lebby , Hsing-Chung Lee , Chan-Long Shieh
IPC分类号： H01S5/00 , H01S5/042 , H01S5/183 , H01S5/22 , H01L21/20
CPC分类号： H01S5/18308 , H01S5/18305 , H01S5/18327 , H01S5/2214 , Y10S438/969
摘要： A method of fabricating VCSELs including the steps of epitaxially growing a first mirror stack of a first conductivity type, an active region on the first mirror stack, and a first portion of a second mirror stack of a second conductivity type on the active region. A dielectric layer is then formed on the first portion of the second mirror stack, patterned to define an operating region and a remaining portion of the second mirror stack is epitaxially grown on the first portion to form a complete second mirror stack. Portions of the second mirror stack overlying the dielectric layer are polycrystalline in formation and substantially limit the remaining portion of the second mirror stack to the operating region. The polycrystalline layers can then be removed and electrical contacts formed.
摘要翻译：一种制造VCSEL的方法，包括以下步骤：在有源区上外延生长第一导电类型的第一反射镜叠层，第一反射镜叠层上的有源区和第二导电类型的第二反射镜叠层的第一部分。然后在第二反射镜叠层的第一部分上形成电介质层，其被图案化以限定操作区域，并且在第一部分上外延生长第二反射镜叠层的剩余部分以形成完整的第二反射镜叠层。覆盖在介电层上的第二反射镜叠层的部分在形成时是多晶的，并且基本上将第二反射镜叠层的剩余部分限制到操作区域。然后可以去除多晶层并形成电接触。

2. 发明授权

US5446752A VCSEL with current blocking layer offset 失效
标题翻译： VCSEL具有当前阻塞层偏移
公开(公告)号：US5446752A
公开(公告)日：1995-08-29
申请号：US271534
申请日：1994-07-07
申请人： Donald E. Ackley , Chan-Long Shieh , Michael S. Lebby , Hsing-Chung Lee , Piotr Grodzinski
发明人： Donald E. Ackley , Chan-Long Shieh , Michael S. Lebby , Hsing-Chung Lee , Piotr Grodzinski
IPC分类号： H01S5/02 , H01S5/183 , H01S3/19
CPC分类号： H01S5/18308 , H01S5/0207 , H01S5/18327 , H01S5/1833 , H01S5/18358 , H01S5/2063 , H01S5/2222
摘要： A top-emitting vertical cavity surface emitting laser with a current blocking layer at the substrate and offset layers in the mirror stack providing an optical waveguide aligned to the injected current distribution.
摘要翻译：在衬底上具有电流阻挡层的顶发射垂直腔表面发射激光器和反射镜堆叠中的偏移层，提供与注入的电流分布对准的光波导。

3. 发明授权

US5530715A Vertical cavity surface emitting laser having continuous grading 失效
标题翻译：具有连续分级的垂直腔表面发射激光
公开(公告)号：US5530715A
公开(公告)日：1996-06-25
申请号：US346559
申请日：1994-11-29
申请人： Chan-Long Shieh , Michael S. Lebby , Hsing-Chung Lee , Piotr Grodzinski
发明人： Chan-Long Shieh , Michael S. Lebby , Hsing-Chung Lee , Piotr Grodzinski
IPC分类号： H01S5/00 , H01S5/183 , H01S3/08
CPC分类号： H01S5/183 , B82Y20/00 , H01S5/3054 , H01S5/3215 , H01S5/34313
摘要： A first stack of distributed Bragg mirrors having alternating layers of aluminum gallium arsenide differing in concentrations of an aluminum are disposed on a surface of a substrate with a first plurality of continuous gradient layers positioned between the alternating layers of differing aluminum concentrations to dynamically move the aluminum concentration from one of the alternating layer to another alternating layers. A first cladding region is disposed on the first stack of distributed Bragg mirrors. An active region is disposed on the first cladding region with a second cladding region being dispose on the active region. A second stack of distributed Bragg mirrors having alternating layers of aluminum gallium arsenide differing concentrations of aluminum are disposed on the second cladding region with a second plurality of continuous gradient layers being positioned between the alternating layers of differing aluminum concentrations to dynamically change the aluminum concentration from one of the altering layers to another alternating layers.
摘要翻译：具有不同于铝浓度的铝砷化镓的交替层的分布布拉格反射镜的第一堆叠被布置在基板的表面上，其中第一多个连续梯度层位于不同铝浓度的交替层之间以动态地移动铝从交替层之一到另一个交替层的浓度。第一包层区域布置在分布布拉格反射镜的第一堆叠上。有源区设置在第一包层区上，第二包层区设置在有源区上。具有不同浓度的铝的交替铝砷化镓层的第二层布拉格反射镜布置在第二覆层区域上，第二多个连续梯度层位于不同铝浓度的交替层之间以动态地将铝浓度从另一个交替层的改变层之一。

4. 发明授权

US5547898A Method for p-doping of a light-emitting device 失效
标题翻译：发光装置的p掺杂方法
公开(公告)号：US5547898A
公开(公告)日：1996-08-20
申请号：US529468
申请日：1995-09-18
申请人： Piotr Grodzinski , Hsing-Chung Lee , Chan-Long Shieh
发明人： Piotr Grodzinski , Hsing-Chung Lee , Chan-Long Shieh
IPC分类号： C23C16/18 , H01L21/205 , H01S5/00 , H01S5/183 , H01S5/30 , H01L21/20
CPC分类号： H01S5/3054 , H01S5/18361
摘要： A method for controlling carbon doping levels in a Distributed Bragg Reflectors (DBRs) for a Vertical Cavity Surface Emitting Laser (VCSELs) devices is provided. A first stack of mirrors (105) is deposited on the surface (101) of the substrate (102). A first cladding region (106) is deposited on the first stack of mirrors (105). An active layer (108) is deposited on the first cladding layer (106). A second cladding layer (109) is deposited on the active layer (108). A second stack of mirrors (111) is deposited on the second cladding layer (109) having a carbon doping level controlled by ratio of Group V containing organometallic (tertiarybutylarsine) to Group III organometallics (trimethylgallium and trimethylaluminum).
摘要翻译：提供了一种用于控制用于垂直腔面发射激光器（VCSEL））的分布式布拉格反射器（DBR）中的碳掺杂水平的方法。在衬底（102）的表面（101）上沉积第一叠反射镜（105）。第一包层区域（106）沉积在第一反射镜叠层（105）上。有源层（108）沉积在第一覆层（106）上。第二覆层（109）沉积在有源层（108）上。第二堆叠反射镜（111）沉积在具有由含有有机金属（叔丁基胂）至III族有机金属（三甲基镓和三甲基铝）的V族的比例控制的碳掺杂浓度的第二包覆层上。

5. 发明授权

US5432809A VCSEL with Al-free cavity region 失效
标题翻译： VCSEL具有无空腔区域
公开(公告)号：US5432809A
公开(公告)日：1995-07-11
申请号：US261502
申请日：1994-06-15
申请人： Piotr Grodzinski , Michael S. Lebby , Donald E. Ackley
发明人： Piotr Grodzinski , Michael S. Lebby , Donald E. Ackley
IPC分类号： H01S5/00 , H01S5/042 , H01S5/183 , H01S3/085 , H01S3/131
CPC分类号： H01S5/18327 , H01S5/209
摘要： Patterned-mirrors for VCSELs are fabricated by forming a first mirror stack of a plurality of pairs of relatively high and low index of refraction layers of AlGaAs, forming an active region of aluminum-free material on the first mirror stack, and forming a second mirror stack of a plurality of pairs of relatively high and low index of refraction layers of AlGaAs. The second mirror stack can be selectively etched to the active region by utilizing the aluminum-free active region as an etch stop.
摘要翻译：通过形成多对相对较高和较低折射率的AlGaAs折射率层的第一反射镜叠层，在第一反射镜叠层上形成无铝材料的有源区，并形成第二反射镜，制造用于VCSEL的图案反射镜堆叠的多对相对较高和较低折射率的AlGaAs层。通过利用无铝活性区域作为蚀刻停止，可以将第二反射镜堆叠选择性地蚀刻到有源区域。

6. 发明授权

US5557626A Patterned mirror VCSEL with adjustable selective etch region 失效
标题翻译：带可调选择性蚀刻区域的图案镜VCSEL
公开(公告)号：US5557626A
公开(公告)日：1996-09-17
申请号：US261272
申请日：1994-06-15
申请人： Piotr Grodzinski , Michael S. Lebby , Hsing-Chung Lee
发明人： Piotr Grodzinski , Michael S. Lebby , Hsing-Chung Lee
IPC分类号： H01L21/302 , H01L21/3065 , H01S5/00 , H01S5/183 , H01S5/20 , H01S3/19
CPC分类号： H01S5/18327 , H01S5/209
摘要： Patterned-mirrors for VCSELs are fabricated by forming a first mirror stack of a plurality of pairs of relatively high and low index of refraction layers, forming an active region of aluminum-free material on the first mirror stack, and forming a second mirror stack of a plurality of pairs of relatively high and low index of refraction layers. The second mirror stack includes first and second portions of materials selected to provide different rates of etching between the first and second portions. The second portion is selectively etched to the first portion by utilizing the first portion as an etch stop.
摘要翻译：通过形成多对相对较高和较低的折射率折射率层的第一反射镜叠层来形成用于VCSEL的图形反射镜，在第一反射镜叠层上形成无铝材料的有源区，并形成第二反射镜叠层多对相对较高和较低的折射率折射率层。第二反射镜叠层包括被选择为在第一和第二部分之间提供不同的蚀刻速率的第一和第二部分材料。通过利用第一部分作为蚀刻停止，第二部分被选择性地蚀刻到第一部分。

7. 发明授权

US5661075A Method of making a VCSEL with passivation 失效
标题翻译：制造具有钝化的VCSEL的方法
公开(公告)号：US5661075A
公开(公告)日：1997-08-26
申请号：US384054
申请日：1995-02-06
申请人： Piotr Grodzinski , Michael S. Lebby
发明人： Piotr Grodzinski , Michael S. Lebby
IPC分类号： H01S5/183 , H01L21/20
CPC分类号： H01S5/18352 , H01S2301/176 , H01S5/2081 , H01S5/2224
摘要： A substrate (103) having a first stack of DBRs (106), an active region (118), and a second stack of DBRs (138) is provided. An etch mask (146) is formed on the second stack of DBRs (138) and etched. The second stack of DBRs (138), the active region (118), and a portion of the first stack of DBRs (106) are subsequently etched. A portion of the etch mask (146) is removed from the etch mask (146). A material layer (202, 302) is then selectively deposited on portions of the second stack of DBRs (138), the active region (118), and the first stack of DBRs (106) by either selective epitaxial over-growth or mass-transfer processes, thereby passivating the VCSEL (101).
摘要翻译：提供了具有第一堆DBR（106），有源区（118）和第二DBR（138）堆叠的衬底（103）。蚀刻掩模（146）形成在DBR（138）的第二叠层上并被蚀刻。随后蚀刻第二堆DBR（138），有源区（118）和第一堆DBR（106）的一部分。蚀刻掩模（146）的一部分从蚀刻掩模（146）移除。然后，材料层（202,302）通过选择性外延过度生长或质量传导层选择性地沉积在第二DBR（138），有源区（118）和第一堆DBR（106）的部分上，转移过程，从而钝化VCSEL（101）。

8. 发明授权

US5638392A Short wavelength VCSEL 失效
标题翻译：短波长VCSEL
公开(公告)号：US5638392A
公开(公告)日：1997-06-10
申请号：US441270
申请日：1995-05-15
申请人： Jamal Ramdani , Michael S. Lebby , Piotr Grodzinski
发明人： Jamal Ramdani , Michael S. Lebby , Piotr Grodzinski
IPC分类号： H01S5/00 , H01S5/02 , H01S5/183 , H01S5/32 , H01S5/323 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/183 , H01S5/0211 , H01S5/0212 , H01S5/3201 , H01S5/32333 , H01S5/34326
摘要： A short wavelength vertical cavity surface emitting laser (101) is provided. A substrate (102) having a surface (103), wherein the substrate (102) includes gallium arsenide phosphide is formed. A first stack of mirrors (106) overlying the first surface (103) of the substrate (102) is formed. A first cladding region (107) is formed overlying the first stack of mirrors (106). An active region (108) is formed overlying the first cladding region (107). A second cladding region (109) is formed overlying the active region (108). A second stack of mirrors (110) is formed overlying the second cladding region (109). A contact region (126) is formed overlying the second stack of mirrors (110).
摘要翻译：提供了一种短波长垂直腔面发射激光器（101）。具有表面（103）的基板（102），其中形成基板（102）包括砷化镓磷化物。形成覆盖衬底（102）的第一表面（103）的第一叠反射镜（106）。第一包层区域（107）形成在第一反射镜叠层（106）上。在第一包层区（107）上形成有源区（108）。第二包层区域（109）形成在有源区域（108）上。在第二包层区域（109）上形成第二层反射镜（110）。接触区域（126）形成在第二反射镜叠层（110）上。

9. 发明申请

US20060160205A1 DEVICES AND METHODS FOR BIOCHIP MULTIPLEXING 有权
标题翻译： BIOCHIP MULTIPLEXING的装置和方法
公开(公告)号：US20060160205A1
公开(公告)日：2006-07-20
申请号：US09993342
申请日：2001-11-05
申请人： Gary Blackburn , Hau Duong , Piotr Grodzinski , Jon Kayyem , Stephen O'Connor , Robert Pietri , Robert Terbrueggen , Frederic Zenhausern , Gary Olsen
发明人： Gary Blackburn , Hau Duong , Piotr Grodzinski , Jon Kayyem , Stephen O'Connor , Robert Pietri , Robert Terbrueggen , Frederic Zenhausern , Gary Olsen
IPC分类号： C12M1/34
CPC分类号： B82Y30/00 , B01F13/0059 , B01F13/0079 , B01F13/0222 , B01L3/5027 , B01L3/502715 , B01L7/52 , B01L7/525 , B01L2300/023 , B01L2300/024 , B01L2300/0636 , B01L2300/0645 , B01L2300/0816 , B01L2300/0877 , B01L2300/1822 , B01L2300/1827 , B01L2300/1883 , B01L2400/0415 , B01L2400/0439 , B01L2400/0442 , B01L2400/0478 , B01L2400/0487 , B01L2400/0611 , B01L2400/0638 , B01L2400/0644 , B01L2400/0661 , B82Y15/00 , B82Y40/00 , G01N35/00871 , G01N2001/021 , G01N2035/00158 , G01N2035/00326
摘要： The invention is directed to devices that allow for simultaneous multiple biochip analysis. In particular, the devices are configured to hold multiple cartridges comprising biochips comprising arrays such as nucleic acid arrays, and allow for high throughput analysis of samples.
摘要翻译：本发明涉及允许同时进行多个生物芯片分析的装置。特别地，这些装置被配置为容纳包含生物芯片的多个盒，所述生物芯片包括诸如核酸阵列之类的阵列，并允许样品的高通量分析。

10. 发明授权

US06984516B2 Multilayered microfluidic DNA analysis system and method 失效
公开(公告)号：US06984516B2
公开(公告)日：2006-01-10
申请号：US10340057
申请日：2003-01-10
申请人： Cynthia G. Briscoe , Huinan Yu , Piotr Grodzinski , Robert Marrero , Jeremy W. Burdon , Rong-Fong Huang
发明人： Cynthia G. Briscoe , Huinan Yu , Piotr Grodzinski , Robert Marrero , Jeremy W. Burdon , Rong-Fong Huang
IPC分类号： C12M1/34 , C12P19/34 , B01J19/08
CPC分类号： G01N30/6069 , B01J19/0093 , B01J2219/00317 , B01J2219/00351 , B01J2219/00495 , B01J2219/00783 , B01J2219/00835 , B01J2219/00873 , B01J2219/00966 , B01L3/502707 , B01L3/50273 , B01L3/502738 , B01L7/00 , B01L7/52 , B01L2200/0689 , B01L2200/12 , B01L2300/0627 , B01L2300/0645 , B01L2300/0874 , B01L2300/0883 , B01L2300/0887 , B01L2300/12 , B01L2300/18 , B01L2300/1822 , B01L2400/0415 , B01L2400/0439 , B32B18/00 , B32B2038/042 , B32B2311/06 , B32B2311/08 , B32B2315/02 , B81B2201/058 , B81C1/00119 , B81C2201/019 , C04B2235/6562 , C04B2237/341 , C04B2237/343 , C04B2237/348 , C04B2237/50 , C04B2237/62 , C04B2237/68 , C04B2237/704 , C40B60/14 , F04B19/006 , F28D9/00 , F28D2021/0029 , F28F13/00 , F28F2260/02 , G01N30/60 , G01N30/6004 , G01N30/6095 , G01N2030/025 , G01N2030/528 , G01N2035/00158 , G01N2035/00237 , H05K1/0272 , H05K1/0306 , H05K3/4611 , H05K3/4629
摘要： A multilayered microfluidic DNA analysis system includes a cell lysis chamber, a DNA separation chamber, a DNA amplification chamber, and a DNA detection system. The multilayered microfluidic DNA analysis system is provided as a substantially monolithic structure formed from a plurality of green-sheet layers sintered together. The substantially monolithic structure has defined therein a means for heating the DNA amplification chamber and a means for cooling the DNA amplification chamber. The means for heating and means for cooling operate to cycle the temperature of the DNA amplification chamber as required for performing a DNA amplification process, such as PCR.

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