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    • 3. 发明申请
    • Hybrid Guided-Mode Resonance Filter And Method Employing Distributed Bragg Reflection
    • 使用分布布拉格反射的混合引导模式谐振滤波器和方法
    • US20110188807A1
    • 2011-08-04
    • US13002763
    • 2008-07-14
    • David A. FattalQianfan XuSagi V. MathaiMichael R. Tan
    • David A. FattalQianfan XuSagi V. MathaiMichael R. Tan
    • G02B6/34
    • G02B6/124G02B6/12007G02B6/29316
    • A hybrid guided-mode resonance (GMR) grating, an optical filter and a method of optical filtering employ distributed Bragg reflection. The hybrid GMR grating includes a waveguide layer that supports a GMR having a GMR resonant frequency. The hybrid GMR grating further includes a diffraction grating that couples a portion of a signal incident on the hybrid GMR grating into the waveguide layer; and a distributed Bragg reflector (DBR) that reflects another portion of the incident signal. The coupled portion of the incident signal has a frequency corresponding to the GMR resonant frequency. The reflected portion has a frequency away from the GMR resonant frequency. The optical filter includes the hybrid GMR grating and a coupler. The method includes coupling an optical signal into the hybrid GMR grating and further coupling a reflected signal out of the hybrid GMR grating.
    • 混合导模共振(GMR)光栅,光学滤波器和光学滤波方法采用分布式布拉格反射。 混合GMR光栅包括支持具有GMR谐振频率的GMR的波导层。 混合GMR光栅还包括将入射在混合GMR光栅上的信号的一部分耦合到波导层中的衍射光栅; 以及反射入射信号的另一部分的分布式布拉格反射器(DBR)。 入射信号的耦合部分具有对应于GMR谐振频率的频率。 反射部分具有远离GMR谐振频率的频率。 光学滤波器包括混合GMR光栅和耦合器。 该方法包括将光信号耦合到混合GMR光栅中,并将来自混合GMR光栅的反射信号进一步耦合。
    • 6. 发明授权
    • Hybrid guided-mode resonance filter and method employing distributed bragg reflection
    • 混合导模谐振滤波器和采用分布式布拉格反射的方法
    • US08369665B2
    • 2013-02-05
    • US13002763
    • 2008-07-14
    • David A. FattalQianfan XuSagi V. MathaiMichael R. Tan
    • David A. FattalQianfan XuSagi V. MathaiMichael R. Tan
    • G02B6/34
    • G02B6/124G02B6/12007G02B6/29316
    • A hybrid guided-mode resonance (GMR) grating, an optical filter and a method of optical filtering employ distributed Bragg reflection. The hybrid GMR grating includes a waveguide layer that supports a GMR having a GMR resonant frequency. The hybrid GMR grating further includes a diffraction grating that couples a portion of a signal incident on the hybrid GMR grating into the waveguide layer; and a distributed Bragg reflector (DBR) that reflects another portion of the incident signal. The coupled portion of the incident signal has a frequency corresponding to the GMR resonant frequency. The reflected portion has a frequency away from the GMR resonant frequency. The optical filter includes the hybrid GMR grating and a coupler. The method includes coupling an optical signal into the hybrid GMR grating and further coupling a reflected signal out of the hybrid GMR grating.
    • 混合导模共振(GMR)光栅,光学滤波器和光学滤波方法采用分布式布拉格反射。 混合GMR光栅包括支持具有GMR谐振频率的GMR的波导层。 混合GMR光栅还包括将入射在混合GMR光栅上的信号的一部分耦合到波导层中的衍射光栅; 以及反射入射信号的另一部分的分布式布拉格反射器(DBR)。 入射信号的耦合部分具有对应于GMR谐振频率的频率。 反射部分具有远离GMR谐振频率的频率。 光学滤波器包括混合GMR光栅和耦合器。 该方法包括将光信号耦合到混合GMR光栅中,并将来自混合GMR光栅的反射信号进一步耦合。
    • 7. 发明申请
    • NANOWIRE-BASED PHOTODIODE
    • 基于纳米级的光刻胶
    • US20110062416A1
    • 2011-03-17
    • US12990939
    • 2008-05-05
    • Shih-Yuan WangMichael R. Tan
    • Shih-Yuan WangMichael R. Tan
    • H01L31/0352H01L31/18
    • H01L31/105B82Y20/00
    • A nanowire-based photodiode and an interdigital p-i-n photodiode use an i-type semiconductor nanowire in an i-region of the photodiode. The nanowire-based photodiode includes a first sidewall of a first semiconductor doped with a p-type dopant, a second sidewall of the first semiconductor doped with an n-type dopant, and an intrinsic semiconductor nanowire that spans a trench between the first and second sidewalls. The trench is wider at a top than at a bottom adjacent to a substrate. The first semiconductor of one or both of the first sidewall and the second sidewall is single crystalline and together the first sidewall, the nanowire and the second sidewall form a p-i-n semiconductor junction of the photodiode.
    • 基于纳米线的光电二极管和指数p-i-n光电二极管在光电二极管的i区域中使用i型半导体纳米线。 纳米线基光电二极管包括掺杂有p型掺杂剂的第一半导体的第一侧壁,掺杂有n型掺杂剂的第一半导体的第二侧壁和跨越第一和第二掺杂剂之间的沟槽的本征半导体纳米线 侧壁 沟槽在顶部比在与衬底相邻的底部更宽。 第一侧壁和第二侧壁中的一个或两个的第一半导体是单晶的,并且第一侧壁,纳米线和第二侧壁一起形成光电二极管的p-i-n半导体结。