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    • 8. 发明申请
    • NANOWIRE-BASED PHOTODIODE
    • 基于纳米级的光刻胶
    • US20110062416A1
    • 2011-03-17
    • US12990939
    • 2008-05-05
    • Shih-Yuan WangMichael R. Tan
    • Shih-Yuan WangMichael R. Tan
    • H01L31/0352H01L31/18
    • H01L31/105B82Y20/00
    • A nanowire-based photodiode and an interdigital p-i-n photodiode use an i-type semiconductor nanowire in an i-region of the photodiode. The nanowire-based photodiode includes a first sidewall of a first semiconductor doped with a p-type dopant, a second sidewall of the first semiconductor doped with an n-type dopant, and an intrinsic semiconductor nanowire that spans a trench between the first and second sidewalls. The trench is wider at a top than at a bottom adjacent to a substrate. The first semiconductor of one or both of the first sidewall and the second sidewall is single crystalline and together the first sidewall, the nanowire and the second sidewall form a p-i-n semiconductor junction of the photodiode.
    • 基于纳米线的光电二极管和指数p-i-n光电二极管在光电二极管的i区域中使用i型半导体纳米线。 纳米线基光电二极管包括掺杂有p型掺杂剂的第一半导体的第一侧壁,掺杂有n型掺杂剂的第一半导体的第二侧壁和跨越第一和第二掺杂剂之间的沟槽的本征半导体纳米线 侧壁 沟槽在顶部比在与衬底相邻的底部更宽。 第一侧壁和第二侧壁中的一个或两个的第一半导体是单晶的,并且第一侧壁,纳米线和第二侧壁一起形成光电二极管的p-i-n半导体结。