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1. 发明授权

US07459365B2 Method for fabricating a semiconductor component 有权
标题翻译：半导体部件的制造方法
公开(公告)号：US07459365B2
公开(公告)日：2008-12-02
申请号：US11540922
申请日：2006-09-29
申请人： Michael Rüb , Herbert Schäfer , Armin Willmeroth , Anton Mauder , Stefan Sedlmaier , Roland Rupp , Manfred Pippan , Hans Weber , Frank Pfirsch , Franz Hirler , Hans-Joachim Schulze
发明人： Michael Rüb , Herbert Schäfer , Armin Willmeroth , Anton Mauder , Stefan Sedlmaier , Roland Rupp , Manfred Pippan , Hans Weber , Frank Pfirsch , Franz Hirler , Hans-Joachim Schulze
IPC分类号： H01L21/336
CPC分类号： H01L29/7813 , H01L21/76224 , H01L29/0653 , H01L29/165 , H01L29/66734 , H01L29/7804 , H01L29/7849
摘要： The fabrication of a semiconductor component having a semiconductor body in which is arranged a very thin dielectric layer having sections which run in the vertical direction and which extend very deeply into the semiconductor body is disclosed. In one method a trench is formed in a drift zone region proceeding from the front side of a semiconductor body, a sacrificial layer is produced on at least a portion of the sidewalls of the trench and at least a portion of the trench is filled with a semiconductor material which is chosen such that the quotient of the net dopant charge of the semiconductor material in the trench and the total area of the sacrificial layer on the sidewalls of the trench between the semiconductor material and the drift zone region is less than the breakdown charge of the semiconductor material, and the sacrificial layer is replaced with a dielectric.
摘要翻译：公开了具有半导体主体的半导体部件的制造，其中布置有具有在垂直方向上延伸并且非常深地延伸到半导体本体中的截面的非常薄的电介质层。在一种方法中，在从半导体主体的前侧开始的漂移区域中形成沟槽，在沟槽的至少一部分侧壁上产生牺牲层，并且沟槽的至少一部分填充有半导体材料被选择为使得沟槽中的半导体材料的净掺杂剂电荷的商和半导体材料和漂移区域之间的沟槽的侧壁上的牺牲层的总面积小于击穿电荷的半导体材料，并且牺牲层被电介质代替。

2. 发明授权

US08431988B2 Lateral trench transistor, as well as a method for its production 有权
标题翻译：横向沟槽晶体管，以及其生产方法
公开(公告)号：US08431988B2
公开(公告)日：2013-04-30
申请号：US11262483
申请日：2005-10-28
申请人： Franz Hirler , Uwe Wahl , Thorsten Meyer , Michael Rüb , Armin Willmeroth , Markus Schmitt , Carolin Tolksdorf , Carsten Schäffer
发明人： Franz Hirler , Uwe Wahl , Thorsten Meyer , Michael Rüb , Armin Willmeroth , Markus Schmitt , Carolin Tolksdorf , Carsten Schäffer
IPC分类号： H01L29/66
CPC分类号： H01L29/66689 , H01L21/26586 , H01L29/0696 , H01L29/1045 , H01L29/1095 , H01L29/41758 , H01L29/4236 , H01L29/42368 , H01L29/66666 , H01L29/66704 , H01L29/78 , H01L29/7825
摘要： A lateral trench transistor has a semiconductor body having a source region, a source contact, a body region, a drain region, and a gate trench, in which a gate electrode which is isolated from the semiconductor body is embedded. A heavily doped semiconductor region is provided within the body region or adjacent to it, and is electrically connected to the source contact, and whose dopant type corresponds to that of the body region.
摘要翻译：横向沟槽晶体管具有半导体本体，其具有嵌入与半导体本体隔离的栅电极的源极区，源极接触，体区，漏极区和栅极沟槽。重掺杂半导体区域设置在体区内或与其相邻，并且与源极接触电连接，并且其掺杂剂类型对应于身体区域。

3. 发明授权

US08492771B2 Heterojunction semiconductor device and method 有权
标题翻译：异质结半导体器件及方法
公开(公告)号：US08492771B2
公开(公告)日：2013-07-23
申请号：US11862661
申请日：2007-09-27
申请人： Michael Rüb , Michael Treu , Armin Willmeroth , Franz Hirler
发明人： Michael Rüb , Michael Treu , Armin Willmeroth , Franz Hirler
IPC分类号： H01L29/15 , H01L31/0312
CPC分类号： H01L29/7802 , H01L29/0634 , H01L29/0878 , H01L29/1095 , H01L29/165 , H01L29/267 , H01L29/41775 , H01L29/66068
摘要： A semiconductor device includes a first semiconductor substrate of a first band-gap material and a second semiconductor substrate of a second band-gap material. The second band-gap material has a lower band-gap than the first band-gap material. A heterojunction is formed between the first semiconductor substrate and the second semiconductor substrate substantially in a first plane. The semiconductor device further includes, in a cross-section which is perpendicular to the first plane, a first semiconductor region of a first conductivity type and a second semiconductor region of the first conductivity type both of which extend from the second semiconductor substrate at least partially into the first semiconductor substrate. The first and second semiconductor regions are spaced in the first semiconductor substrate from each other in a direction parallel to the first plane by a first distance which is arranged in an area proximate to the heterojunction and which is larger than a second distance which is arranged in an area distal to the heterojunction.
摘要翻译：半导体器件包括第一带隙材料的第一半导体衬底和第二带隙材料的第二半导体衬底。第二带隙材料具有比第一带隙材料低的带隙。基本上在第一平面中，在第一半导体衬底和第二半导体衬底之间形成异质结。所述半导体器件还包括垂直于所述第一平面的横截面，所述第一导电类型的第一半导体区域和所述第一导电类型的第二半导体区域从所述第二半导体衬底至少部分地延伸进入第一半导体衬底。第一和第二半导体区域在第一半导体衬底中沿平行于第一平面的方向彼此间隔开第一距离，第一距离布置在接近异质结的区域中，并且大于第二距离远离异质结的区域。

4. 发明授权

US06649459B2 Method for manufacturing a semiconductor component 有权
标题翻译：半导体部件的制造方法
公开(公告)号：US06649459B2
公开(公告)日：2003-11-18
申请号：US09817594
申请日：2001-03-26
申请人： Gerald Deboy , Wolfgang Friza , Oliver Häberlen , Michael Rüb , Helmut Strack
发明人： Gerald Deboy , Wolfgang Friza , Oliver Häberlen , Michael Rüb , Helmut Strack
IPC分类号： H01L21338
CPC分类号： H01L29/7802 , H01L21/26586 , H01L29/0619 , H01L29/0623 , H01L29/0634 , H01L29/0649 , H01L29/0653 , H01L29/1095 , H01L29/41766
摘要： The invention relates to a method for producing a semiconductor component including semiconductor areas of different conductivity types which are alternately positioned in a semiconductor body. The semiconductor areas of different conductivity types extend at least from one first zone to a position near a second zone. Because of variable doping in trenches and in the trench fillings, an electric field is generated which increases from both the first zone and the second zone.
摘要翻译：本发明涉及一种用于制造半导体元件的方法，该半导体元件包括交替地位于半导体本体中的不同导电类型的半导体区域。不同导电类型的半导体区域至少从一个第一区延伸到靠近第二区的位置。由于沟槽和沟槽填充中的可变掺杂，产生从第一区和第二区两者增加的电场。

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