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1. 发明授权

US06515491B1 Structural body having a stochastic surface patterning as well as a capacitive sensor having such a structural body 有权
标题翻译：具有随机表面图案化的结构体以及具有这种结构体的电容传感器
公开(公告)号：US06515491B1
公开(公告)日：2003-02-04
申请号：US09569212
申请日：2000-05-11
申请人： Michael Kupzig , Andrea Schilp , Karsten Funk
发明人： Michael Kupzig , Andrea Schilp , Karsten Funk
IPC分类号： G01R2726
CPC分类号： G01N27/221 , G01N27/226 , G01R27/2605
摘要： A structural body which, at least region-wise, has at least one area which is in contact with a liquid or a gas flowing past, and which, at least to a great extent, is provided with a surface patterning made of a plurality of randomly or irregularly distributed geometric forms, in particular pyramids. At least one such structural body be used in a capacitive sensor with which, in particular, the dielectric constants or the conductance of a liquid or a gas can be determined.
摘要翻译：至少在区域上具有与液体或流过的气体接触的至少一个区域的结构体，并且至少在很大程度上具有由多个区域形成的表面图案随机或不规则分布的几何形式，特别是金字塔。在电容式传感器中至少使用一个这样的结构体，尤其可以确定液体或气体的介电常数或电导率。

2. 发明授权

US06324910B1 Method and device for measuring a physical variable 有权
标题翻译：用于测量物理变量的方法和装置
公开(公告)号：US06324910B1
公开(公告)日：2001-12-04
申请号：US09284907
申请日：1999-06-22
申请人： Karsten Funk , Hans-Martin Kulcke , Franz Laermer , Andrea Schilp
发明人： Karsten Funk , Hans-Martin Kulcke , Franz Laermer , Andrea Schilp
IPC分类号： G01H1300
CPC分类号： G01P15/097 , G01C19/5726 , G01P2015/0814
摘要： A method for measuring a physical variable in which a structure is put in resonant oscillations and a change in the oscillation frequency of the structure as a result of a change in the physical variable to be measured is detected, and a frequency-analog signal is provided. A structure oscillating with a resonance frequency receives an electrostatic force.
摘要翻译：检测结构被置于共振振荡中的物理变量的测量方法以及由待测物理变化引起的结构振荡频率的变化的方法，并提供频率模拟信号。以共振频率振荡的结构接收静电力。

3. 发明授权

US06062082A Micromechanical acceleration or coriolis rotation-rate sensor 失效
标题翻译：微机械加速度或科里奥利旋转速率传感器
公开(公告)号：US06062082A
公开(公告)日：2000-05-16
申请号：US913598
申请日：1997-09-18
申请人： Gero Guenther , Karsten Funk , Franz Laermer , Andrea Schilp
发明人： Gero Guenther , Karsten Funk , Franz Laermer , Andrea Schilp
IPC分类号： G01C19/5712 , G01P15/14 , G01P15/08 , G01P9/04
CPC分类号： G01C19/5712
摘要： An acceleration sensor, particularly a Coriolis rotation-rate sensor, having a swinging structure that is movably suspended on a substrate (base) and can be deflected due to an acceleration effect, the sensor further having an arrangement for generating a planar swinging movement of the swinging structure, particularly a rotational swinging movement, and an evaluating arrangement for detecting a deflection of the swinging structure that is stipulated by acceleration, particularly for detecting a Coriolis acceleration. The swinging structure (12) is rotatably suspended so as to perform a planar swinging movement, and should perform a planar, rotational swinging movement.
摘要翻译： PCT No.PCT / DE96 / 00248 Sec。 371日期：1997年9月18日 102（e）1997年9月18日PCT PCT 1996年2月17日PCT公布。出版物WO97 / 02467 日期1997年1月23日具有摆动结构的加速度传感器，特别是科里奥利旋转速率传感器，其可移动地悬挂在基板（基座）上并且可由于加速效应而偏转，该传感器还具有用于产生摆动结构的平面摆动运动，特别是旋转摆动运动，以及用于检测由加速度规定的摆动结构的偏转的评估装置，特别是用于检测科里奥利加速度。摆动结构（12）可旋转地悬挂以便进行平面摆动，并且应该进行平面旋转摆动。

4. 发明授权

US6012341A Force sensor having an adjustable distance between an operating point and a point of mechanical instability 有权
标题翻译：力传感器在工作点和机械不稳定点之间具有可调节的距离
公开(公告)号：US6012341A
公开(公告)日：2000-01-11
申请号：US91315
申请日：1998-09-23
申请人： Karsten Funk , Hans-Martin Kulcke , Franz Laermer , Werner Uhler , Andrea Schilp
发明人： Karsten Funk , Hans-Martin Kulcke , Franz Laermer , Werner Uhler , Andrea Schilp
IPC分类号： G01L1/10 , G01L9/00 , G01P15/097 , G01P15/10
CPC分类号： G01P15/097 , G01L1/10 , G01L9/0008
摘要： A force sensor, especially an acceleration sensor or a pressure sensor, has a structure that vibrates in resonance, and its oscillation frequency is variable due to an acting force which is to be detected. The distance of an operating point of the force sensor from the point of its mechanical instability can be adjusted by applying an electric voltage.
摘要翻译： PCT No.PCT / DE96 / 02070 Sec。 371日期：1998年9月23日 102（e）1998年9月23日PCT PCT 1996年10月31日PCT公布。公开号WO97 / 22864 日期：1997年6月26日力传感器，特别是加速度传感器或压力传感器具有振动的结构，其振动频率由于待检测的作用力而变化。可以通过施加电压来调节力传感器的操作点与其机械不稳定性的距离。

5. 发明授权

US6030850A Method for manufacturing a sensor 失效
标题翻译：制造传感器的方法
公开(公告)号：US6030850A
公开(公告)日：2000-02-29
申请号：US030414
申请日：1998-02-25
申请人： Juergen Kurle , Karsten Funk , Franz Laermer , Michael Offenberg , Andrea Schilp
发明人： Juergen Kurle , Karsten Funk , Franz Laermer , Michael Offenberg , Andrea Schilp
IPC分类号： G01L1/18 , B81B3/00 , B81C1/00 , G01P15/08 , G01P15/125 , H01L29/84 , G01L1/00 , H01L21/461
CPC分类号： B81B7/007 , B81C1/0019 , G01P15/0802 , G01P15/125 , B81B2201/0235 , B81B2203/033 , B81C2201/0136 , B81C2203/0118 , G01P2015/0814
摘要： In a sensor and a method for manufacturing a sensor, a movable element is patterned out of a silicon layer and is secured to a substrate. The conducting layer is subdivided into various regions, which are electrically insulated from one another. The electrical connection between the various regions of the silicon layer is established by a conducting layer, which is arranged between a first and a second insulating layer.
摘要翻译：在传感器和制造传感器的方法中，可移动元件被图案化为硅层并固定到基底。导电层被细分成彼此电绝缘的各个区域。通过布置在第一和第二绝缘层之间的导电层来建立硅层的各个区域之间的电连接。

6. 发明授权

US5756901A Sensor and method for manufacturing a sensor 失效
标题翻译：用于制造传感器的传感器和方法
公开(公告)号：US5756901A
公开(公告)日：1998-05-26
申请号：US718603
申请日：1996-09-24
申请人： Juergen Kurle , Karsten Funk , Franz Laermer , Michael Offenberg , Andrea Schilp
发明人： Juergen Kurle , Karsten Funk , Franz Laermer , Michael Offenberg , Andrea Schilp
IPC分类号： G01L1/18 , B81B3/00 , B81C1/00 , G01P15/08 , G01P15/125 , H01L29/84 , G01L1/00
CPC分类号： B81B7/007 , B81C1/0019 , G01P15/0802 , G01P15/125 , B81B2201/0235 , B81B2203/033 , B81C2201/0136 , B81C2203/0118 , G01P2015/0814
摘要： In a sensor and a method for manufacturing a sensor, a movable element is patterned out of a silicon layer and is secured to a substrate. The conducting layer is subdivided into various regions, which are electrically insulated from one another. The electrical connection between the various regions of the silicon layer is established by a conducting layer, which is arranged between a first and a second insulating layer.
摘要翻译：在传感器和制造传感器的方法中，可移动元件被图案化为硅层并固定到基底。导电层被细分成彼此电绝缘的各个区域。通过布置在第一和第二绝缘层之间的导电层来建立硅层的各个区域之间的电连接。

7. 发明授权

US06531031B1 Plasma etching installation 有权
标题翻译：等离子刻蚀安装
公开(公告)号：US06531031B1
公开(公告)日：2003-03-11
申请号：US09623734
申请日：2000-11-22
申请人： Volker Becker , Franz Laermer , Andrea Schilp , Thomas Beck
发明人： Volker Becker , Franz Laermer , Andrea Schilp , Thomas Beck
IPC分类号： H01L2100
CPC分类号： H01J37/321
摘要： A plasma processing system for etching a substrate using a highly dense plasma in a reactor. An ICP coil having a first coil end and a second coil end generating a high-frequency electromagnetic alternating field in the reactor which acts on a reactive gas and, as an inductively coupled plasma source, produces the highly dense plasma from reactive particles and ions. The two coil ends each communicate via a feed point with a high-frequency infeed, which applies in each case a high-frequency a.c. voltage of the same frequency to the first coil end and to the second coil end (21, 21′). The two high-frequency a.c. voltages applied at the two coil ends are connected to a symmetrical, capacitive network via a &lgr;2 -delay line linking the first feed point and the second feed point and are, at least nearly in phase opposition to one another, and have at least nearly the same amplitudes.
摘要翻译：一种用于在反应器中使用高密度等离子体蚀刻衬底的等离子体处理系统。具有第一线圈端和第二线圈端的ICP线圈，其在反应器中产生作用于反应气体的高频电磁交变场，并且作为电感耦合等离子体源，从反应性粒子和离子产生高密度等离子体。两个线圈端各自通过馈电点与高频电源进行通信，每种情况都适用于高频电源。相同频率的电压到第一线圈端和第二线圈端（21,21'）。两个高频a.c. 施加在两个线圈端处的电压通过连接第一馈电点和第二馈电点的lambd2 - 线路连接到对称的电容网络，并且至少几乎相互相反地并且具有至少接近于相同的幅度。

8. 发明授权

US5501893A Method of anisotropically etching silicon 失效
标题翻译：各向异性蚀刻硅的方法
公开(公告)号：US5501893A
公开(公告)日：1996-03-26
申请号：US284490
申请日：1994-08-05
申请人： Franz Laermer , Andrea Schilp
发明人： Franz Laermer , Andrea Schilp
IPC分类号： H01L21/302 , B81C1/00 , H01L21/3065 , H01L21/308 , C25F3/12 , B44C1/22
CPC分类号： H01L21/3085 , B81C1/00619 , H01L21/3065 , H01L21/30655 , B81C2201/0112 , Y10T428/24521
摘要： A method of anisotropic plasma etching of silicon to provide laterally defined recess structures therein through an etching mask employing a plasma, the method including anisotropic plasma etching in an etching step a surface of the silicon by contact with a reactive etching gas to removed material from the surface of the silicon and provide exposed surfaces; polymerizing in a polymerizing step at least one polymer former contained in the plasma onto the surface of the silicon during which the surfaces that were exposed in a preceding etching step are covered by a polymer layer thereby forming a temporary etching stop; and alternatingly repeating the etching step and the polymerizing step. The method provides a high mask selectivity simultaneous with a very high anisotropy of the etched structures.
摘要翻译： PCT No.PCT / DE93 / 01129 Sec。 371日期：1994年8月5日 102（e）日期1994年8月5日PCT提交1993年11月27日PCT公布。出版物WO94 / 14187 日期：1994年6月23日。一种通过使用等离子体的蚀刻掩模在其中提供横向限定的凹陷结构的硅的各向异性等离子体蚀刻的方法，所述方法包括在蚀刻步骤中的各向异性等离子体蚀刻，所述硅的表面通过与反应性蚀刻气体以从硅表面去除材料并提供暴露的表面; 在聚合步骤中将包含在等离子体中的至少一种聚合物前体聚合到硅的表面上，在该表面处，在前面的蚀刻步骤中暴露的表面被聚合物层覆盖，从而形成临时蚀刻停止; 并交替重复蚀刻步骤和聚合步骤。该方法与蚀刻结构的非常高的各向异性同时提供高掩模选择性。

9. 发明授权

US07166536B1 Methods for plasma etching of silicon 有权
标题翻译：硅等离子体蚀刻方法
公开(公告)号：US07166536B1
公开(公告)日：2007-01-23
申请号：US09720761
申请日：2000-03-16
申请人： Franz Laermer , Andrea Schilp , Bernhard Elsner
发明人： Franz Laermer , Andrea Schilp , Bernhard Elsner
IPC分类号： H01L21/302
CPC分类号： H01L21/3065 , Y02C20/30 , Y02P70/605
摘要： A method of plasma etching, in particular of anisotropic plasma etching, of laterally defined structures in a silicon substrate, using a process gas, includes having at least one passivating material precipitated on the side walls of the laterally defined structures at least from time to time prior to and/or during etching. In an exemplary method, at least one of the compounds selected from the group ClF3, BrF3, or IF5 is added to the process gas as a fluorine-delivering etching gas. In another exemplary method, NF3 is added to the process gas, at least from time to time, as an additive consuming the passivating material. Finally, in another exemplary method, a light and easily ionizable gas, in particular H2, He, or Ne, is added, at least from time to time, to the process gas. The three exemplary methods may be combined.
摘要翻译：使用工艺气体的硅衬底中的横向限定结构的等离子体蚀刻（特别是各向异性等离子体蚀刻）的方法至少包括至少一次在横向限定的结构的侧壁上析出的钝化材料在蚀刻之前和/或期间。在示例性方法中，将至少一种选自ClF 3 3，BrF 3或IF 5的化合物加入到该方法气体作为输送氧气的蚀刻气体。在另一示例性方法中，至少不时地将NF 3 N作为消耗钝化材料的添加剂加入到工艺气体中。最后，在另一示例性方法中，至少不时地向工艺气体添加轻质且易于电离的气体，特别是H 2，He或Ne。可以组合三种示例性方法。

10. 发明授权

US06720273B1 DEVICE AND METHOD FOR THE HIGH-FREQUENCY ETCHING OF A SUBSTRATE USING A PLASMA ETCHING INSTALLATION AND DEVICE AND METHOD FOR IGNITING A PLASMA AND FOR PULSING THE PLASMA OUT PUT OR ADJUSTING THE SAME UPWARDS 有权
标题翻译：使用等离子体蚀刻安装的基板的高频蚀刻的装置和方法以及用于点燃等离子体并用于脉冲等离子体输出或调整相同UPWARDS的方法
公开(公告)号：US06720273B1
公开(公告)日：2004-04-13
申请号：US09763138
申请日：2001-04-20
申请人： Volker Becker , Franz Laermer , Andrea Schilp , Thomas Beck
发明人： Volker Becker , Franz Laermer , Andrea Schilp , Thomas Beck
IPC分类号： H01L213065
CPC分类号： H01J37/32174 , C30B33/12 , H01J37/32082 , H01L21/3065 , H01L21/30655 , H01L21/3085 , H01L21/3086
摘要： A device and a method capable of being carried out therewith for, preferably, anisotropically etching a substrate (10), in particular, a patterned silicon body, with the assistance of a plasma (14), is proposed. In the process, the plasma (14) is produced by a plasma source (13) to which a high-frequency generator (17) is connected for applying a high-frequency power. Moreover, this high-frequency generator is in communication with a first means which periodically changes the high-frequency power applied to the plasma source (13). Besides, provision is preferably made for a second means which adapts the output impedance of the high-frequency generator (17) to the prevailing impedance of the plasma source (13) which changes as a function of the high-frequency power. The proposed anisotropic etching method is carried out in separate and alternating etching and polymerization steps, a higher high-frequency power of up to 5000 watts being, at least temporarily, applied to the plasma source (13) during the etching steps than during the deposition steps. The proposed device is also suitable for igniting a plasma (14) and for adjusting upward or pulsing a plasma power from a starting value to up to 5000 watts.
摘要翻译：提出了一种借助于等离子体（14）能够进行优选地各向异性地蚀刻衬底（10）特别是图案化硅体的装置和方法。在该过程中，等离子体（14）由连接有高频发生器（17）的等离子体源（13）产生，以施加高频电力。此外，该高频发生器与周期性地改变施加到等离子体源（13）的高频功率的第一装置通信。此外，优选地对于将高频发生器（17）的输出阻抗适配为等离子体源（13）的主要阻抗（其随高频功率变化而变化）的第二装置进行设置。所提出的各向异性蚀刻方法在分离和交替的蚀刻和聚合步骤中进行，在蚀刻步骤期间至少暂时施加高达5000瓦特的高频功率至等离子体源（13）比在沉积期间更高脚步。所提出的装置还适用于点燃等离子体（14）并且用于将等离子体功率从起始值向上调节或脉冲至高达5000瓦特。

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