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1. 发明申请

US20080076058A1 Luminescent photoresist 审中-公开
标题翻译：发光光刻胶
公开(公告)号：US20080076058A1
公开(公告)日：2008-03-27
申请号：US11502916
申请日：2006-08-11
申请人： Michael J. Leeson , Heidi B. Cao , Wang Yueh , Jeanette M. Roberts
发明人： Michael J. Leeson , Heidi B. Cao , Wang Yueh , Jeanette M. Roberts
IPC分类号： G03F7/004
CPC分类号： G03F7/0045 , G03F7/2022 , G03F7/38
摘要： A photoresist composition (phosphoresist) including a resist capable of activation when exposed to electromagnetic energy within a first bandwidth, but relatively insensitive to electromagnetic energy within a second bandwidth and a third bandwidth, and also including a phosphor material included in the photoresist and capable of activation when exposed to electromagnetic energy within the second bandwidth. Photo-luminescent centers included in the phosphoresist are associated with the phosphor material and are capable of emitting luminescence within the first bandwidth in response to exposure to electromagnetic energy within the third bandwidth. The phosphoresist may be disposed as a relatively thin and uniform layer at a surface of a substrate, such as a semiconductor substrate.
摘要翻译：一种光致抗蚀剂组合物（磷光阻剂），其包括当在第一带宽内暴露于电磁能量时能够激活但在第二带宽和第三带宽内对电磁能量相对不敏感的抗蚀剂，并且还包括包含在光致抗蚀剂中的磷光体材料，在第二个带宽内暴露于电磁能时激活。包含在磷光抗蚀剂中的光致发光中心与磷光体材料相关联并且能够响应于在第三带宽内的电磁能量的暴露而在第一带宽内发射发光。磷光阻剂可以在诸如半导体衬底的衬底的表面处设置为相对薄且均匀的层。

2. 发明授权

US07226718B2 Non-outgassing low activation energy resist 失效
标题翻译：非除气低活化能抵抗
公开(公告)号：US07226718B2
公开(公告)日：2007-06-05
申请号：US11228589
申请日：2005-09-15
申请人： Heidi B. Cao , Wang Yueh , Jeanette M. Roberts
发明人： Heidi B. Cao , Wang Yueh , Jeanette M. Roberts
IPC分类号： G03F7/039 , G03F7/38 , G03F7/30
CPC分类号： G03F7/0392 , G03F7/2004 , Y10S430/106
摘要： Numerous embodiments of a method to prevent outgassing from a low activation energy photoresist are described. In one embodiment of the present invention, a photoresist material is dispensed over a substrate to form a photoresist layer. The photoresist layer includes branched polymers coupled with acetal or ketal linkages. An exposed portion of the photoresist layer is exposed to a radiation treatment to cleave the acetal or ketal linkages and separate the branched polymers. The photoresist layer is baked at a temperature below about 100° C., and the separated branched polymers are too large to outgass from the photoresist layer.
摘要翻译：描述了防止从低活化能光致抗蚀剂脱气的方法的许多实施方案。在本发明的一个实施例中，将光致抗蚀剂材料分配在衬底上以形成光致抗蚀剂层。光致抗蚀剂层包括与缩醛或缩酮键连接的支链聚合物。将光致抗蚀剂层的暴露部分暴露于辐射处理以切割缩醛或缩酮键并分离支化聚合物。光致抗蚀剂层在低于约100℃的温度下烘烤，并且分离的支化聚合物太大而不能从光致抗蚀剂层逸出。

3. 发明授权

US07147986B2 Resist compounds including acid labile groups attached to polymeric chains at anhydride linkages 有权
标题翻译：抗酸化合物包括在酸酐键连接到聚合物链上的酸不稳定基团
公开(公告)号：US07147986B2
公开(公告)日：2006-12-12
申请号：US10815606
申请日：2004-03-31
申请人： Wang Yueh , Heidi B. Cao
发明人： Wang Yueh , Heidi B. Cao
IPC分类号： G03F7/004
CPC分类号： G03F7/0397
摘要： A compound including a polymeric chain, and an acid labile group attached to the polymeric chain at an anhydride linkage is disclosed. Compositions including the compound, and methods of using the compositions are also disclosed.
摘要翻译：公开了包含聚合物链的化合物和在酸酐键连接到聚合物链上的酸不稳定基团。还公开了包括该化合物的组合物和使用该组合物的方法。

4. 发明授权

US07166413B2 Enabling chain scission of branched photoresist 失效
标题翻译：支持支链光致抗蚀剂的链式切割
公开(公告)号：US07166413B2
公开(公告)日：2007-01-23
申请号：US10964200
申请日：2004-10-12
申请人： Heidi B. Cao , Robert P. Meagley
发明人： Heidi B. Cao , Robert P. Meagley
IPC分类号： G03F7/039
CPC分类号： G03F7/039 , G03F7/0392 , Y10S430/106 , Y10S430/109 , Y10S430/111 , Y10S522/914
摘要： By using a branched long chained chain scission polymer as a photoresist for EUV and 157 nanometer applications, a relatively higher molecular weight polymer with good mechanical properties may be achieved. In addition, by using chain scission technology, line edge roughness and resolution may be improved at the same time.
摘要翻译：通过使用支链长链断裂聚合物作为EUV和157纳米应用的光致抗蚀剂，可以实现具有良好机械性能的相对较高分子量的聚合物。另外，通过使用断链技术，线边缘粗糙度和分辨率可以同时提高。

5. 发明授权

US07723008B2 Photoactive adhesion promoter in a slam 失效
标题翻译：光敏助粘剂
公开(公告)号：US07723008B2
公开(公告)日：2010-05-25
申请号：US11087181
申请日：2005-03-22
申请人： Robert P. Meagley , Heidi B. Cao , Kevin P. O'Brien
发明人： Robert P. Meagley , Heidi B. Cao , Kevin P. O'Brien
IPC分类号： G03C1/00
CPC分类号： G03F7/091 , G03F7/0045
摘要： A semiconductor process technique to help reduce semiconductor process effects, such as undesired line edge roughness, insufficient lithographical resolution, and limited depth of focus problems associated with the removal of a photoresist layer. More particularly, embodiments of the invention use a photoacid generator (PAG) material in conjunction with a sacrificial light absorbing material (SLAM) to help reduce these and other undesired effects associated with the removal of photoresist in a semiconductor manufacturing process. Furthermore, embodiments of the invention allow a PAG to be applied in a semiconductor manufacturing process in an efficient manner, requiring fewer processing operations than typical prior art techniques.
摘要翻译：有助于减少半导体工艺效应的半导体工艺技术，例如不期望的线边缘粗糙度，光刻分辨率不足以及与去除光致抗蚀剂层相关的有限的焦深问题。更具体地，本发明的实施例使用光致酸产生剂（PAG）材料结合牺牲光吸收材料（SLAM）来帮助减少在半导体制造过程中与去除光致抗蚀剂有关的这些和其它不期望的影响。此外，本发明的实施例允许PAG以有效的方式应用于半导体制造过程中，与典型的现有技术相比需要较少的处理操作。

6. 发明授权

US07718528B2 Photoactive adhesion promoter in a SLAM 有权
标题翻译： SLAM中的光敏粘合促进剂
公开(公告)号：US07718528B2
公开(公告)日：2010-05-18
申请号：US11620516
申请日：2007-01-05
申请人： Robert P. Meagley , Heidi B. Cao , Kevin P. O'Brien
发明人： Robert P. Meagley , Heidi B. Cao , Kevin P. O'Brien
IPC分类号： H01L21/302
CPC分类号： G03F7/091 , G03F7/0045
摘要： A semiconductor process technique to help reduce semiconductor process effects, such as undesired line edge roughness, insufficient lithographical resolution, and limited depth of focus problems associated with the removal of a photoresist layer. More particularly, embodiments of the invention use a photoacid generator (PAG) material in conjunction with a sacrificial light absorbing material (SLAM) to help reduce these and other undesired effects associated with the removal of photoresist in a semiconductor manufacturing process. Furthermore, embodiments of the invention allow a PAG to be applied in a semiconductor manufacturing process in an efficient manner, requiring fewer processing operations than typical prior art techniques.
摘要翻译：有助于减少半导体工艺效应的半导体工艺技术，例如不期望的线边缘粗糙度，光刻分辨率不足以及与去除光致抗蚀剂层相关的有限的焦深问题。更具体地，本发明的实施例使用光致酸产生剂（PAG）材料结合牺牲光吸收材料（SLAM）来帮助减少在半导体制造过程中与去除光致抗蚀剂有关的这些和其它不期望的影响。此外，本发明的实施例允许PAG以有效的方式应用于半导体制造过程中，与典型的现有技术相比需要较少的处理操作。

7. 发明授权

US06872505B1 Enabling chain scission of branched photoresist 失效
标题翻译：支持支链光致抗蚀剂的链式切割
公开(公告)号：US06872505B1
公开(公告)日：2005-03-29
申请号：US10663583
申请日：2003-09-16
申请人： Heidi B. Cao , Robert P. Meagley
发明人： Heidi B. Cao , Robert P. Meagley
IPC分类号： G03C1/492 , G03C1/76 , G03F7/004 , G03F7/039
CPC分类号： G03F7/039 , G03F7/0392 , Y10S430/106 , Y10S430/109 , Y10S430/111 , Y10S522/914
摘要： By using a branched long chained chain scission polymer as a photoresist for EUV and 157 nanometer applications, a relatively higher molecular weight polymer with good mechanical properties may be achieved. In addition, by using chain scission technology, line edge roughness and resolution may be improved at the same time.
摘要翻译：通过使用支链长链断裂聚合物作为EUV和157纳米应用的光致抗蚀剂，可以实现具有良好机械性能的相对较高分子量的聚合物。另外，通过使用断链技术，线边缘粗糙度和分辨率可以同时提高。

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