专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20060080633A1 Method for performing full-chip manufacturing reliability checking and correction 有权
标题翻译：执行全芯片制造可靠性检查和校正的方法
公开(公告)号：US20060080633A1
公开(公告)日：2006-04-13
申请号：US11225888
申请日：2005-09-14
申请人： Michael Hsu , Thomas Laidig , Kurt Wampler , Duan-Fu Hsu , Xuelong Shi
发明人： Michael Hsu , Thomas Laidig , Kurt Wampler , Duan-Fu Hsu , Xuelong Shi
IPC分类号： G06F17/50 , G03F1/00
CPC分类号： G03F7/705 , G03F1/36 , G03F7/70433 , G03F7/70441
摘要： A method of generating a mask for use in an imaging process pattern. The method includes the steps of: (a) obtaining a desired target pattern having a plurality of features to be imaged on a substrate; (b) simulating a wafer image utilizing the target pattern and process parameters associated with a defined process; (c) defining at least one feature category; (d) identifying features in the target pattern that correspond to the at least one feature category, and recording an error value for each feature identified as corresponding to the at least one feature category; and (e) generating a statistical summary which indicates the error value for each feature identified as corresponding to the at least one feature category.
摘要翻译：一种生成用于成像处理模式的掩模的方法。该方法包括以下步骤：（a）获得具有要在基底上成像的多个特征的期望目标图案; （b）使用目标图案模拟晶片图像并处理与定义的工艺相关的参数; （c）定义至少一个要素类别; （d）识别与所述至少一个特征类别相对应的所述目标图案中的特征，以及记录与所述至少一个特征类别相对应的每个特征的错误值; 和（e）生成统计摘要，其指示被识别为对应于所述至少一个特征类别的每个特征的误差值。

2. 发明申请

US20070117030A1 Method of two dimensional feature model calibration and optimization 有权
标题翻译：二维特征模型校准和优化方法
公开(公告)号：US20070117030A1
公开(公告)日：2007-05-24
申请号：US11655868
申请日：2007-01-22
申请人： Thomas Laidig , Jang Chen , Xuelong Shi , Ralph Schlief , Uwe Hollerbach , Kurt Wampler
发明人： Thomas Laidig , Jang Chen , Xuelong Shi , Ralph Schlief , Uwe Hollerbach , Kurt Wampler
IPC分类号： G03F1/00
CPC分类号： G03F1/36 , G03F1/68
摘要： A method for generating a photolithography mask for optically transferring a pattern formed in the mask onto a substrate utilizing an imaging system. The method includes the steps of: (a) defining a set of calibration patterns, which are represented in a data format; (b) printing the calibration patterns on a substrate utilizing the given imaging system; (c) determining a first set of contour patterns corresponding to the calibration patterns imaged on the substrate; (d) generating a system pseudo-intensity function, which approximates the imaging performance of the imaging system; (e) determining a second set of contour patterns by utilizing the system pseudo-intensity function to define how the calibration patterns will be imaged in the substrate; (f) comparing the first set of contour patterns and the second set of contour patterns to determine the difference therebetween; (g) adjusting the system pseudo-intensity function until the difference between the first set of contour patterns and the second set of contour patterns is below a predefined criteria; and (h) utilizing the adjusted system pseudo-intensity function to modify the mask so as to provide for optical proximity correction.
摘要翻译：一种用于产生用于使用成像系统将形成在掩模中的图案光学转印到基板上的光刻掩模的方法。该方法包括以下步骤：（a）定义以数据格式表示的一组校准图案; （b）使用给定的成像系统在校准图案上印刷校准图案; （c）确定与在所述基板上成像的所述校准图案相对应的第一组轮廓图案; （d）产生近似成像系统的成像性能的系统伪强度函数; （e）通过利用所述系统伪强度函数来确定所述校准图案将如何在所述衬底中成像而确定第二组轮廓图案; （f）比较第一组轮廓图案和第二组轮廓图案以确定它们之间的差异; （g）调整所述系统伪强度函数，直到所述第一组轮廓图案与所述第二组轮廓图案之间的差低于预定标准; 和（h）利用调整后的系统伪强度函数来修改掩模，以提供光学邻近校正。

3. 发明申请

US20050142449A1 Method and apparatus for performing model based placement of phase-balanced scattering bars for sub-wavelength optical lithography 有权
标题翻译：用于亚波长光学光刻的相位平衡散射棒的基于模型的放置方法和装置
公开(公告)号：US20050142449A1
公开(公告)日：2005-06-30
申请号：US10933496
申请日：2004-09-03
申请人： Xuelong Shi , Jang Chen , Thomas Laidig , Kurt Wampler , Douglas Broeke
发明人： Xuelong Shi , Jang Chen , Thomas Laidig , Kurt Wampler , Douglas Broeke
IPC分类号： G03F1/00 , G03F1/36 , G03F9/00 , G06F17/50 , H01L21/027
CPC分类号： G03F7/705 , G03F1/36
摘要： A method of generating a mask design having optical proximity correction features disposed therein. The methods includes the steps of obtaining a desired target pattern having features to be imaged on a substrate; determining a first interference map based on the target pattern, which defines areas of constructive interference between at least one of the features to be imaged and a field area adjacent the at least one feature; placing a first set of assist features having a first phase in the mask design based on the areas of constructive interference defined by the first interference map; determining a second interference map based on the first set of assist features, which defines areas of constructive interference between assist features of the first set of assist features and a field area adjacent at least one of the assist features of the first set of assist features; and placing a second set of assist features having a second phase in the mask design based on the areas of constructive interference defined by the second interference map, wherein the first phase does not equal the second phase.
摘要翻译：一种产生具有设置在其中的光学邻近校正特征的掩模设计的方法。所述方法包括以下步骤：获得具有要在基底上成像的特征的期望目标图案; 基于所述目标图案来确定第一干涉图，所述目标图案定义要成像的至少一个要素与邻近所述至少一个特征的场区域之间的建构性干扰的区域; 基于由第一干涉图定义的建构性干扰的区域，在掩模设计中放置具有第一相位的第一组辅助特征; 基于所述第一组辅助特征确定第二干涉图，所述第一组辅助特征限定所述第一组辅助特征的辅助特征之间的建构性干扰的区域和与所述第一组辅助特征的所述辅助特征中的至少一个邻近的场区域; 以及基于由所述第二干涉图定义的构成性干扰的区域，将具有第二相位的第二组辅助特征放置在所述掩模设计中，其中所述第一相位不等于所述第二相位。

4. 发明授权

US07434195B2 Method for performing full-chip manufacturing reliability checking and correction 有权
标题翻译：执行全芯片制造可靠性检查和校正的方法
公开(公告)号：US07434195B2
公开(公告)日：2008-10-07
申请号：US11225888
申请日：2005-09-14
申请人： Michael Hsu , Thomas Laidig , Kurt E. Wampler , Duan-Fu Stephen Hsu , Xuelong Shi
发明人： Michael Hsu , Thomas Laidig , Kurt E. Wampler , Duan-Fu Stephen Hsu , Xuelong Shi
IPC分类号： G06F17/50 , G06K9/00 , G03F1/00
CPC分类号： G03F7/705 , G03F1/36 , G03F7/70433 , G03F7/70441
摘要： A method of generating a mask for use in an imaging process pattern. The method includes the steps of: (a) obtaining a desired target pattern having a plurality of features to be imaged on a substrate; (b) simulating a wafer image utilizing the target pattern and process parameters associated with a defined process; (c) defining at least one feature category; (d) identifying features in the target pattern that correspond to the at least one feature category, and recording an error value for each feature identified as corresponding to the at least one feature category; and (e) generating a statistical summary which indicates the error value for each feature identified as corresponding to the at least one feature category.
摘要翻译：一种生成用于成像处理模式的掩模的方法。该方法包括以下步骤：（a）获得具有要在基底上成像的多个特征的期望目标图案; （b）使用目标图案模拟晶片图像并处理与定义的工艺相关的参数; （c）定义至少一个要素类别; （d）识别与所述至少一个特征类别相对应的所述目标图案中的特征，以及记录与所述至少一个特征类别相对应的每个特征的错误值; 和（e）生成统计摘要，其指示被识别为对应于所述至少一个特征类别的每个特征的误差值。

5. 发明授权

US07247574B2 Method and apparatus for providing optical proximity features to a reticle pattern for deep sub-wavelength optical lithography 有权
标题翻译：用于将深度亚波长光学光刻的掩模版图案提供光学邻近特征的方法和装置
公开(公告)号：US07247574B2
公开(公告)日：2007-07-24
申请号：US10756830
申请日：2004-01-14
申请人： Douglas Van Den Broeke , Jang Fung Chen , Thomas Laidig , Kurt E. Wampler , Stephen Duan-Fu Hsu
发明人： Douglas Van Den Broeke , Jang Fung Chen , Thomas Laidig , Kurt E. Wampler , Stephen Duan-Fu Hsu
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： G03F1/36 , G03F7/70441
摘要： A method of generating a mask design having optical proximity correction features disposed therein. The methods includes the steps of obtaining a desired target pattern having features to be imaged on a substrate; determining an interference map based on the target pattern, the interference map defining areas of constructive interference and areas of destructive interference between at least one of the features to be imaged and a field area adjacent the at least one feature; and placing assist features in the mask design based on the areas of constructive interference and the areas of destructive interference.
摘要翻译：一种产生具有设置在其中的光学邻近校正特征的掩模设计的方法。所述方法包括以下步骤：获得具有要在基底上成像的特征的期望目标图案; 确定基于所述目标图案的干涉图，所述干涉图定义建构性干扰的区域和要成像的至少一个要素与邻近所述至少一个特征的场区之间的相消干涉的区域; 并且基于建设性干扰的区域和破坏性干扰的区域将辅助特征放置在掩模设计中。

6. 发明申请

US20070031740A1 Method, program product and apparatus for performing mask feature pitch decomposition for use in a multiple exposure process 有权
标题翻译：用于进行多次曝光处理中使用的掩模特征间距分解的方法，程序产品和装置
公开(公告)号：US20070031740A1
公开(公告)日：2007-02-08
申请号：US11472544
申请日：2006-06-22
申请人： Jang Chen , Duan-Fu Hsu , Douglas Van Den Broeke , Thomas Laidig
发明人： Jang Chen , Duan-Fu Hsu , Douglas Van Den Broeke , Thomas Laidig
IPC分类号： G03F1/00
CPC分类号： G03F7/70466 , G03F1/70
摘要： A method for forming exposure masks for imaging a target pattern having features to be imaged on a substrate in a multi-exposure process. The method includes the steps of generating a set of decomposition rules defining whether a given feature of the target pattern is assigned to a first exposure mask or a second exposure mask; applying the decomposition rules to each of the features in the target pattern so as to assign each of the features in the target pattern to one of the first exposure mask or second exposure mask; and generating the first exposure mask and the second exposure mask containing the respective features assigned to each mask.
摘要翻译：一种形成曝光掩模的方法，用于在多曝光过程中对具有要被成像的特征的目标图案进行成像。该方法包括以下步骤：产生一组分解规则，定义目标图案的给定特征是否被分配给第一曝光掩模或第二曝光掩模; 将分解规则应用于目标图案中的每个特征，以将目标图案中的每个特征分配给第一曝光掩模或第二曝光掩模之一; 以及生成包含分配给每个掩模的各个特征的第一曝光掩模和第二曝光掩模。

7. 发明授权

US07774736B2 Method and apparatus for providing optical proximity features to a reticle pattern for deep sub-wavelength optical lithography 有权
标题翻译：用于将深度亚波长光学光刻的掩模版图案提供光学邻近特征的方法和装置
公开(公告)号：US07774736B2
公开(公告)日：2010-08-10
申请号：US11714147
申请日：2007-03-06
申请人： Douglas Van Den Broeke , Jang Fung Chen , Thomas Laidig , Kurt E. Wampler , Stephen Duan-Fu Hsu
发明人： Douglas Van Den Broeke , Jang Fung Chen , Thomas Laidig , Kurt E. Wampler , Stephen Duan-Fu Hsu
IPC分类号： G06F17/50
CPC分类号： G03F1/36 , G03F7/70441
摘要： A method of generating a mask design having optical proximity correction features disposed therein. The methods includes the steps of obtaining a desired target pattern having features to be imaged on a substrate; determining an interference map based on the target pattern, the interference map defining areas of constructive interference and areas of destructive interference between at least one of the features to be imaged and a field area adjacent the at least one feature; and placing assist features in the mask design based on the areas of constructive interference and the areas of destructive interference.
摘要翻译：一种产生具有设置在其中的光学邻近校正特征的掩模设计的方法。所述方法包括以下步骤：获得具有要在基底上成像的特征的期望目标图案; 确定基于所述目标图案的干涉图，所述干涉图定义建构性干扰的区域和要成像的至少一个要素与邻近所述至少一个特征的场区域之间的相消干涉区域; 并且基于建设性干扰的区域和破坏性干扰的区域将辅助特征放置在掩模设计中。

8. 发明申请

US20070065733A1 CPL mask and a method and program product for generating the same 有权
标题翻译： CPL掩码和用于生成CPL掩码的方法和程序产品
公开(公告)号：US20070065733A1
公开(公告)日：2007-03-22
申请号：US11501916
申请日：2006-08-10
申请人： Jang Chen , Duan-Fu Hsu , Douglas Van Den Broeke , Jung Park , Thomas Laidig
发明人： Jang Chen , Duan-Fu Hsu , Douglas Van Den Broeke , Jung Park , Thomas Laidig
IPC分类号： G03C5/00 , G06F17/50 , G03F1/00
CPC分类号： G03F1/34 , G03F1/32
摘要： A method of generating a mask for printing a pattern including a plurality of features. The method includes the steps of obtaining data representing the plurality of features; and forming at least one of the plurality of features by etching a substrate to form a mesa and depositing a chrome layer over the entire upper surface of the mesa, where said mesa has a predetermined height.
摘要翻译：一种生成用于打印包括多个特征的图案的掩模的方法。该方法包括获取表示多个特征的数据的步骤; 以及通过蚀刻基底以形成台面并在所述台面的整个上表面上沉积铬层，形成所述多个特征中的至少一个，其中所述台面具有预定高度。

9. 发明授权

US07820341B2 Method of two dimensional feature model calibration and optimization 有权
标题翻译：二维特征模型校准和优化方法
公开(公告)号：US07820341B2
公开(公告)日：2010-10-26
申请号：US11655868
申请日：2007-01-22
申请人： Thomas Laidig , Jang Fung Chen , Xuelong Shi , Ralph Schlief , Uwe Hollerbach , Kurt E. Wampler
发明人： Thomas Laidig , Jang Fung Chen , Xuelong Shi , Ralph Schlief , Uwe Hollerbach , Kurt E. Wampler
IPC分类号： G03F1/00 , G06F17/50
CPC分类号： G03F1/36 , G03F1/68
摘要： A method for generating a photolithography mask for optically transferring a pattern formed in the mask onto a substrate utilizing an imaging system. The method includes the steps of: (a) defining a set of calibration patterns, which are represented in a data format; (b) printing the calibration patterns on a substrate utilizing the given imaging system; (c) determining a first set of contour patterns corresponding to the calibration patterns imaged on the substrate; (d) generating a system pseudo-intensity function, which approximates the imaging performance of the imaging system; (e) determining a second set of contour patterns by utilizing the system pseudo-intensity function to define how the calibration patterns will be imaged in the substrate; (f) comparing the first set of contour patterns and the second set of contour patterns to determine the difference therebetween; (g) adjusting the system pseudo-intensity function until the difference between the first set of contour patterns and the second set of contour patterns is below a predefined criteria; and (h) utilizing the adjusted system pseudo-intensity function to modify the mask so as to provide for optical proximity correction.
摘要翻译：一种用于产生用于使用成像系统将形成在掩模中的图案光学转印到基板上的光刻掩模的方法。该方法包括以下步骤：（a）定义以数据格式表示的一组校准图案; （b）使用给定的成像系统在校准图案上印刷校准图案; （c）确定与在所述基板上成像的所述校准图案相对应的第一组轮廓图案; （d）产生近似成像系统的成像性能的系统伪强度函数; （e）通过利用所述系统伪强度函数来确定所述校准图案将如何在所述衬底中成像而确定第二组轮廓图案; （f）比较第一组轮廓图案和第二组轮廓图案以确定它们之间的差异; （g）调整所述系统伪强度函数，直到所述第一组轮廓图案与所述第二组轮廓图案之间的差低于预定标准; 和（h）利用调整后的系统伪强度函数来修改掩模，以提供光学邻近校正。

10. 发明授权

US07550235B2 Method and apparatus for performing model based placement of phase-balanced scattering bars for sub-wavelength optical lithography 有权
标题翻译：用于亚波长光学光刻的相位平衡散射棒的基于模型的放置方法和装置
公开(公告)号：US07550235B2
公开(公告)日：2009-06-23
申请号：US10933496
申请日：2004-09-03
申请人： Xuelong Shi , Jang Fung Chen , Thomas Laidig , Kurt E. Wampler , Douglas Van Den Broeke
发明人： Xuelong Shi , Jang Fung Chen , Thomas Laidig , Kurt E. Wampler , Douglas Van Den Broeke
IPC分类号： G03F1/02
CPC分类号： G03F7/705 , G03F1/36
摘要： A method of generating a mask design having optical proximity correction features disposed therein. The methods includes the steps of obtaining a desired target pattern having features to be imaged on a substrate; determining a first interference map based on the target pattern, which defines areas of constructive interference between at least one of the features to be imaged and a field area adjacent the at least one feature; placing a first set of assist features having a first phase in the mask design based on the areas of constructive interference defined by the first interference map; determining a second interference map based on the first set of assist features, which defines areas of constructive interference between assist features of the first set of assist features and a field area adjacent at least one of the assist features of the first set of assist features; and placing a second set of assist features having a second phase in the mask design based on the areas of constructive interference defined by the second interference map, wherein the first phase does not equal the second phase.
摘要翻译：一种产生具有设置在其中的光学邻近校正特征的掩模设计的方法。所述方法包括以下步骤：获得具有要在基底上成像的特征的期望目标图案; 基于所述目标图案来确定第一干涉图，所述目标图案定义要成像的至少一个要素与邻近所述至少一个特征的场区域之间的建构性干扰的区域; 基于由第一干涉图定义的建构性干扰的区域，在掩模设计中放置具有第一相位的第一组辅助特征; 基于所述第一组辅助特征确定第二干涉图，所述第一组辅助特征限定所述第一组辅助特征的辅助特征之间的建构性干扰的区域和与所述第一组辅助特征的所述辅助特征中的至少一个邻近的场区域; 以及基于由所述第二干涉图定义的构成性干扰的区域，将具有第二相位的第二组辅助特征放置在所述掩模设计中，其中所述第一相位不等于所述第二相位。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式