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1. 发明申请

US20070065733A1 CPL mask and a method and program product for generating the same 有权
标题翻译： CPL掩码和用于生成CPL掩码的方法和程序产品
公开(公告)号：US20070065733A1
公开(公告)日：2007-03-22
申请号：US11501916
申请日：2006-08-10
申请人： Jang Chen , Duan-Fu Hsu , Douglas Van Den Broeke , Jung Park , Thomas Laidig
发明人： Jang Chen , Duan-Fu Hsu , Douglas Van Den Broeke , Jung Park , Thomas Laidig
IPC分类号： G03C5/00 , G06F17/50 , G03F1/00
CPC分类号： G03F1/34 , G03F1/32
摘要： A method of generating a mask for printing a pattern including a plurality of features. The method includes the steps of obtaining data representing the plurality of features; and forming at least one of the plurality of features by etching a substrate to form a mesa and depositing a chrome layer over the entire upper surface of the mesa, where said mesa has a predetermined height.
摘要翻译：一种生成用于打印包括多个特征的图案的掩模的方法。该方法包括获取表示多个特征的数据的步骤; 以及通过蚀刻基底以形成台面并在所述台面的整个上表面上沉积铬层，形成所述多个特征中的至少一个，其中所述台面具有预定高度。

2. 发明申请

US20070031740A1 Method, program product and apparatus for performing mask feature pitch decomposition for use in a multiple exposure process 有权
标题翻译：用于进行多次曝光处理中使用的掩模特征间距分解的方法，程序产品和装置
公开(公告)号：US20070031740A1
公开(公告)日：2007-02-08
申请号：US11472544
申请日：2006-06-22
申请人： Jang Chen , Duan-Fu Hsu , Douglas Van Den Broeke , Thomas Laidig
发明人： Jang Chen , Duan-Fu Hsu , Douglas Van Den Broeke , Thomas Laidig
IPC分类号： G03F1/00
CPC分类号： G03F7/70466 , G03F1/70
摘要： A method for forming exposure masks for imaging a target pattern having features to be imaged on a substrate in a multi-exposure process. The method includes the steps of generating a set of decomposition rules defining whether a given feature of the target pattern is assigned to a first exposure mask or a second exposure mask; applying the decomposition rules to each of the features in the target pattern so as to assign each of the features in the target pattern to one of the first exposure mask or second exposure mask; and generating the first exposure mask and the second exposure mask containing the respective features assigned to each mask.
摘要翻译：一种形成曝光掩模的方法，用于在多曝光过程中对具有要被成像的特征的目标图案进行成像。该方法包括以下步骤：产生一组分解规则，定义目标图案的给定特征是否被分配给第一曝光掩模或第二曝光掩模; 将分解规则应用于目标图案中的每个特征，以将目标图案中的每个特征分配给第一曝光掩模或第二曝光掩模之一; 以及生成包含分配给每个掩模的各个特征的第一曝光掩模和第二曝光掩模。

3. 发明申请

US20080069432A1 Method and apparatus for performing model-based OPC for pattern decomposed features 有权
标题翻译：用于模式分解特征执行基于模型的OPC的方法和装置
公开(公告)号：US20080069432A1
公开(公告)日：2008-03-20
申请号：US11898646
申请日：2007-09-13
申请人： Duan-Fu Hsu , Jung Park , Douglas Van Den Broeke , Jang Chen
发明人： Duan-Fu Hsu , Jung Park , Douglas Van Den Broeke , Jang Chen
IPC分类号： G06K9/00
CPC分类号： G06T7/0004 , G03F1/36 , G03F1/70 , G03F7/70466 , G03F7/70475
摘要： A method for decomposing a target circuit pattern containing features to be imaged into multiple patterns. The process includes the steps of separating the features to be printed into a first pattern and a second pattern; performing a first optical proximity correction process on the first pattern and the second pattern; determining an imaging performance of the first pattern and the second pattern; determining a first error between the first pattern and the imaging performance of the first pattern, and a second error between the second pattern and the imaging performance of said second pattern; utilizing the first error to adjust the first pattern to generate a modified first pattern; utilizing the second error to adjust the second pattern to generate a modified second pattern; and applying a second optical proximity correction process to the modified first pattern and the modified second pattern.
摘要翻译：一种用于将包含要成像的特征的目标电路图案分解为多个图案的方法。该方法包括将待印刷的特征分离成第一图案和第二图案的步骤; 对所述第一图案和所述第二图案执行第一光学邻近校正处理; 确定所述第一图案和所述第二图案的成像性能; 确定所述第一图案和所述第一图案的成像性能之间的第一误差，以及所述第二图案和所述第二图案的成像性能之间的第二误差; 利用第一误差来调整第一图案以产生修改的第一图案; 利用第二误差来调整第二图案以产生修改的第二图案; 以及对修改的第一图案和修改的第二图案应用第二光学邻近校正处理。

4. 发明授权

US07774736B2 Method and apparatus for providing optical proximity features to a reticle pattern for deep sub-wavelength optical lithography 有权
标题翻译：用于将深度亚波长光学光刻的掩模版图案提供光学邻近特征的方法和装置
公开(公告)号：US07774736B2
公开(公告)日：2010-08-10
申请号：US11714147
申请日：2007-03-06
申请人： Douglas Van Den Broeke , Jang Fung Chen , Thomas Laidig , Kurt E. Wampler , Stephen Duan-Fu Hsu
发明人： Douglas Van Den Broeke , Jang Fung Chen , Thomas Laidig , Kurt E. Wampler , Stephen Duan-Fu Hsu
IPC分类号： G06F17/50
CPC分类号： G03F1/36 , G03F7/70441
摘要： A method of generating a mask design having optical proximity correction features disposed therein. The methods includes the steps of obtaining a desired target pattern having features to be imaged on a substrate; determining an interference map based on the target pattern, the interference map defining areas of constructive interference and areas of destructive interference between at least one of the features to be imaged and a field area adjacent the at least one feature; and placing assist features in the mask design based on the areas of constructive interference and the areas of destructive interference.
摘要翻译：一种产生具有设置在其中的光学邻近校正特征的掩模设计的方法。所述方法包括以下步骤：获得具有要在基底上成像的特征的期望目标图案; 确定基于所述目标图案的干涉图，所述干涉图定义建构性干扰的区域和要成像的至少一个要素与邻近所述至少一个特征的场区域之间的相消干涉区域; 并且基于建设性干扰的区域和破坏性干扰的区域将辅助特征放置在掩模设计中。

5. 发明授权

US07247574B2 Method and apparatus for providing optical proximity features to a reticle pattern for deep sub-wavelength optical lithography 有权
标题翻译：用于将深度亚波长光学光刻的掩模版图案提供光学邻近特征的方法和装置
公开(公告)号：US07247574B2
公开(公告)日：2007-07-24
申请号：US10756830
申请日：2004-01-14
申请人： Douglas Van Den Broeke , Jang Fung Chen , Thomas Laidig , Kurt E. Wampler , Stephen Duan-Fu Hsu
发明人： Douglas Van Den Broeke , Jang Fung Chen , Thomas Laidig , Kurt E. Wampler , Stephen Duan-Fu Hsu
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： G03F1/36 , G03F7/70441
摘要： A method of generating a mask design having optical proximity correction features disposed therein. The methods includes the steps of obtaining a desired target pattern having features to be imaged on a substrate; determining an interference map based on the target pattern, the interference map defining areas of constructive interference and areas of destructive interference between at least one of the features to be imaged and a field area adjacent the at least one feature; and placing assist features in the mask design based on the areas of constructive interference and the areas of destructive interference.
摘要翻译：一种产生具有设置在其中的光学邻近校正特征的掩模设计的方法。所述方法包括以下步骤：获得具有要在基底上成像的特征的期望目标图案; 确定基于所述目标图案的干涉图，所述干涉图定义建构性干扰的区域和要成像的至少一个要素与邻近所述至少一个特征的场区之间的相消干涉的区域; 并且基于建设性干扰的区域和破坏性干扰的区域将辅助特征放置在掩模设计中。

6. 发明申请

US20080092106A1 Method for performing pattern pitch-split decomposition utilizing anchoring features 失效
标题翻译：使用锚固特征进行图案间距分解分解的方法
公开(公告)号：US20080092106A1
公开(公告)日：2008-04-17
申请号：US11898647
申请日：2007-09-13
申请人： Duan-Fu Hsu , Noel Corcoran , Jang Chen , Douglas Van Den Broeke
发明人： Duan-Fu Hsu , Noel Corcoran , Jang Chen , Douglas Van Den Broeke
IPC分类号： G06F17/50
CPC分类号： G03F7/70466 , G03F1/70 , G03F7/70433
摘要： A method for decomposing a target pattern containing features to be printed on a wafer into multiple patterns. The method includes the steps of: (a) determining a minimum critical dimension and pitch associated with a process to be utilized to image the multiple patterns; (b) generating an anchoring feature; (c) disposing the anchoring feature adjacent a first feature of the target pattern; (d) growing the anchoring feature a predetermined amount so as to define a first area; (e) assigning any feature within the first area to a first pattern; (f) disposing the anchoring feature adjacent a second feature of the target pattern; (g) growing the anchoring feature the predetermined amount so as to define a second area; and (h) assigning any feature within the second area to a second pattern. Steps (c)-(h) are then repeated until the densely spaced features within the target pattern have been assigned to either the first or second pattern.
摘要翻译：一种用于将包含要印刷在晶片上的特征的目标图案分解为多个图案的方法。该方法包括以下步骤：（a）确定与要用于对多个图案成像的过程相关联的最小临界尺寸和间距; （b）产生锚固特征; （c）将所述锚定特征设置在所述目标图案的第一特征附近; （d）使锚定特征增长预定量以限定第一区域; （e）将第一区域内的任何特征分配给第一模式; （f）将所述锚定特征设置在所述目标图案的第二特征附近; （g）使锚定特征增长预定量以限定第二区域; 和（h）将第二区域内的任何特征分配给第二模式。然后重复步骤（c） - （h），直到目标图案内密集间隔的特征被分配给第一或第二图案。

7. 发明申请

US20080020296A1 Method and apparatus for performing dark field double dipole lithography (DDL) 有权
标题翻译：用于进行暗场双偶极子光刻（DDL）的方法和装置
公开(公告)号：US20080020296A1
公开(公告)日：2008-01-24
申请号：US11783261
申请日：2007-04-06
申请人： Duan-Fu Hsu , Sangbong Park , Douglas Van Den Broeke , Jang Chen
发明人： Duan-Fu Hsu , Sangbong Park , Douglas Van Den Broeke , Jang Chen
IPC分类号： G03C5/00 , G03F1/00
CPC分类号： G03F1/36 , G03F1/70 , G03F7/70125 , G03F7/70466
摘要： A method of generating complementary masks for use in a dark field double dipole imaging process. The method includes the steps of identifying a target pattern having a plurality of features, including horizontal and vertical features; generating a horizontal mask based on the target pattern, where the horizontal mask includes low contrast vertical features. The generation of the horizontal mask includes the steps of optimizing the bias of the low contrast vertical features contained in the horizontal mask; and applying assist features to the horizontal mask. The method further includes generating a vertical mask based on the target pattern, where the vertical mask contains low contrast horizontal features. The generation of the vertical mask includes the steps of optimizing the bias of low contrast horizontal features contained in the vertical mask; and applying assist features to the vertical mask.
摘要翻译：一种产生用于暗场双偶极成像过程的互补掩模的方法。该方法包括以下步骤：识别具有多个特征的目标图案，包括水平和垂直特征; 基于目标图案生成水平掩模，其中水平掩模包括低对比度垂直特征。水平掩模的生成包括优化包含在水平掩模中的低对比度垂直特征的偏压的步骤; 并将辅助特征应用于水平掩模。该方法还包括基于目标图案生成垂直掩模，其中垂直掩模包含低对比度水平特征。垂直掩模的产生包括优化垂直掩模中包含的低对比度水平特征的偏差的步骤; 并将辅助特征应用于垂直掩模。

8. 发明申请

US20060277521A1 Method, program product and apparatus for performing double exposure lithography 有权
标题翻译：用于进行双曝光光刻的方法，程序产品和装置
公开(公告)号：US20060277521A1
公开(公告)日：2006-12-07
申请号：US11402273
申请日：2006-04-12
申请人： Jang Chen , Duan-Fu Hsu , Douglas Van Den Broeke
发明人： Jang Chen , Duan-Fu Hsu , Douglas Van Den Broeke
IPC分类号： G06F17/50 , G03F1/00 , G21K5/00 , G06F19/00 , A61N5/00 , G21G5/00
CPC分类号： G06F17/5081 , G03F1/144 , G03F1/70 , G03F7/70466 , G06F2217/08 , G06F2217/12
摘要： A method of generating complementary masks based on a target pattern having features to be imaged on a substrate for use in a multiple-exposure lithographic imaging process. The method includes the steps of: defining an initial H-mask corresponding to the target pattern; defining an initial V-mask corresponding to the target pattern; identifying horizontal critical features in the H-mask having a width which is less than a predetermined critical width; identifying vertical critical features in the V-mask having a width which is less than a predetermined critical width; assigning a first phase shift and a first percentage transmission to the horizontal critical features, which are to be formed in the H-mask; and assigning a second phase shift and a second percentage transmission to the vertical critical features, which are to be formed in the V-mask. The method further includes the step of assigning chrome to all non-critical features in the H-mask and the V-mask. The non-critical features are those features having a width which is greater than or equal to the predetermined critical width. The non-critical features are formed in the H-mask and the V-mask utilizing chrome. The target pattern is then imaged on the substrate by imaging both the H-mask and V-mask.
摘要翻译：基于具有要在多曝光光刻成像处理中使用的基板上成像的特征的目标图案产生互补掩模的方法。该方法包括以下步骤：定义对应于目标图案的初始H掩码; 定义对应于目标图案的初始V掩模; 识别具有小于预定临界宽度的宽度的H掩模中的水平临界特征; 识别具有小于预定临界宽度的宽度的V形掩模中的垂直关键特征; 将第一相移和第一百分比传输分配给要在H掩模中形成的水平临界特征; 以及将要在V掩模中形成的垂直关键特征分配第二相移和第二百分比传输。该方法还包括将铬分配给H掩模和V掩模中的所有非关键特征的步骤。非关键特征是具有大于或等于预定临界宽度的宽度的那些特征。非关键特征形成在H掩模和使用铬的V形掩模中。然后通过成像H掩模和V掩模来将目标图案成像在衬底上。

9. 发明授权

US08132130B2 Method, program product and apparatus for performing mask feature pitch decomposition for use in a multiple exposure process 有权
标题翻译：用于进行多次曝光处理中使用的掩模特征间距分解的方法，程序产品和装置
公开(公告)号：US08132130B2
公开(公告)日：2012-03-06
申请号：US11472544
申请日：2006-06-22
申请人： Jang Fung Chen , Duan-Fu Stephen Hsu , Douglas Van Den Broeke , Thomas Laidig
发明人： Jang Fung Chen , Duan-Fu Stephen Hsu , Douglas Van Den Broeke , Thomas Laidig
IPC分类号： G06F17/50
CPC分类号： G03F7/70466 , G03F1/70
摘要： A method for forming exposure masks for imaging a target pattern having features to be imaged on a substrate in a multi-exposure process. The method includes the steps of generating a set of decomposition rules defining whether a given feature of the target pattern is assigned to a first exposure mask or a second exposure mask; applying the decomposition rules to each of the features in the target pattern so as to assign each of the features in the target pattern to one of the first exposure mask or second exposure mask; and generating the first exposure mask and the second exposure mask containing the respective features assigned to each mask.
摘要翻译：一种形成曝光掩模的方法，用于在多曝光过程中对具有要被成像的特征的目标图案进行成像。该方法包括以下步骤：产生一组分解规则，定义目标图案的给定特征是否被分配给第一曝光掩模或第二曝光掩模; 将分解规则应用于目标图案中的每个特征，以将目标图案中的每个特征分配给第一曝光掩模或第二曝光掩模之一; 以及生成包含分配给每个掩模的各个特征的第一曝光掩模和第二曝光掩模。

10. 发明授权

US08039180B2 Scattering bar OPC application method for sub-half wavelength lithography patterning 失效
公开(公告)号：US08039180B2
公开(公告)日：2011-10-18
申请号：US13032590
申请日：2011-02-22
申请人： Thomas Laidig , Kurt E. Wampler , Douglas Van Den Broeke , Jang Fung Chen
发明人： Thomas Laidig , Kurt E. Wampler , Douglas Van Den Broeke , Jang Fung Chen
IPC分类号： G03F9/00
CPC分类号： G03F1/36
摘要： A method of forming a mask having optical proximity correction features, which includes the steps of obtaining a target pattern of features to be imaged, expanding—the width of the features to be imaged, modifying the mask to include assist features which are placed adjacent the edges of the features to be imaged, where the assist features have a length corresponding to the expanded width of the features to be imaged, and returning the features to be imaged from the expanded width to a width corresponding to the target pattern.

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