专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20050142449A1 Method and apparatus for performing model based placement of phase-balanced scattering bars for sub-wavelength optical lithography 有权
标题翻译：用于亚波长光学光刻的相位平衡散射棒的基于模型的放置方法和装置
公开(公告)号：US20050142449A1
公开(公告)日：2005-06-30
申请号：US10933496
申请日：2004-09-03
申请人： Xuelong Shi , Jang Chen , Thomas Laidig , Kurt Wampler , Douglas Broeke
发明人： Xuelong Shi , Jang Chen , Thomas Laidig , Kurt Wampler , Douglas Broeke
IPC分类号： G03F1/00 , G03F1/36 , G03F9/00 , G06F17/50 , H01L21/027
CPC分类号： G03F7/705 , G03F1/36
摘要： A method of generating a mask design having optical proximity correction features disposed therein. The methods includes the steps of obtaining a desired target pattern having features to be imaged on a substrate; determining a first interference map based on the target pattern, which defines areas of constructive interference between at least one of the features to be imaged and a field area adjacent the at least one feature; placing a first set of assist features having a first phase in the mask design based on the areas of constructive interference defined by the first interference map; determining a second interference map based on the first set of assist features, which defines areas of constructive interference between assist features of the first set of assist features and a field area adjacent at least one of the assist features of the first set of assist features; and placing a second set of assist features having a second phase in the mask design based on the areas of constructive interference defined by the second interference map, wherein the first phase does not equal the second phase.
摘要翻译：一种产生具有设置在其中的光学邻近校正特征的掩模设计的方法。所述方法包括以下步骤：获得具有要在基底上成像的特征的期望目标图案; 基于所述目标图案来确定第一干涉图，所述目标图案定义要成像的至少一个要素与邻近所述至少一个特征的场区域之间的建构性干扰的区域; 基于由第一干涉图定义的建构性干扰的区域，在掩模设计中放置具有第一相位的第一组辅助特征; 基于所述第一组辅助特征确定第二干涉图，所述第一组辅助特征限定所述第一组辅助特征的辅助特征之间的建构性干扰的区域和与所述第一组辅助特征的所述辅助特征中的至少一个邻近的场区域; 以及基于由所述第二干涉图定义的构成性干扰的区域，将具有第二相位的第二组辅助特征放置在所述掩模设计中，其中所述第一相位不等于所述第二相位。

2. 发明申请

US20070117030A1 Method of two dimensional feature model calibration and optimization 有权
标题翻译：二维特征模型校准和优化方法
公开(公告)号：US20070117030A1
公开(公告)日：2007-05-24
申请号：US11655868
申请日：2007-01-22
申请人： Thomas Laidig , Jang Chen , Xuelong Shi , Ralph Schlief , Uwe Hollerbach , Kurt Wampler
发明人： Thomas Laidig , Jang Chen , Xuelong Shi , Ralph Schlief , Uwe Hollerbach , Kurt Wampler
IPC分类号： G03F1/00
CPC分类号： G03F1/36 , G03F1/68
摘要： A method for generating a photolithography mask for optically transferring a pattern formed in the mask onto a substrate utilizing an imaging system. The method includes the steps of: (a) defining a set of calibration patterns, which are represented in a data format; (b) printing the calibration patterns on a substrate utilizing the given imaging system; (c) determining a first set of contour patterns corresponding to the calibration patterns imaged on the substrate; (d) generating a system pseudo-intensity function, which approximates the imaging performance of the imaging system; (e) determining a second set of contour patterns by utilizing the system pseudo-intensity function to define how the calibration patterns will be imaged in the substrate; (f) comparing the first set of contour patterns and the second set of contour patterns to determine the difference therebetween; (g) adjusting the system pseudo-intensity function until the difference between the first set of contour patterns and the second set of contour patterns is below a predefined criteria; and (h) utilizing the adjusted system pseudo-intensity function to modify the mask so as to provide for optical proximity correction.
摘要翻译：一种用于产生用于使用成像系统将形成在掩模中的图案光学转印到基板上的光刻掩模的方法。该方法包括以下步骤：（a）定义以数据格式表示的一组校准图案; （b）使用给定的成像系统在校准图案上印刷校准图案; （c）确定与在所述基板上成像的所述校准图案相对应的第一组轮廓图案; （d）产生近似成像系统的成像性能的系统伪强度函数; （e）通过利用所述系统伪强度函数来确定所述校准图案将如何在所述衬底中成像而确定第二组轮廓图案; （f）比较第一组轮廓图案和第二组轮廓图案以确定它们之间的差异; （g）调整所述系统伪强度函数，直到所述第一组轮廓图案与所述第二组轮廓图案之间的差低于预定标准; 和（h）利用调整后的系统伪强度函数来修改掩模，以提供光学邻近校正。

3. 发明申请

US20070162889A1 Method and apparatus for providing optical proximity features to a reticle pattern for deep sub-wavelength optical lithography 有权
公开(公告)号：US20070162889A1
公开(公告)日：2007-07-12
申请号：US11714147
申请日：2007-03-06
申请人： Douglas Broeke , Jang Chen , Thomas Laidig , Kurt Wampler , Stephen Hsu
发明人： Douglas Broeke , Jang Chen , Thomas Laidig , Kurt Wampler , Stephen Hsu
IPC分类号： H01L21/302 , H01L21/461 , G06F17/50 , G03F1/00
CPC分类号： G03F1/36 , G03F7/70441
摘要： A method of generating a mask design having optical proximity correction features disposed therein. The methods includes the steps of obtaining a desired target pattern having features to be imaged on a substrate; determining an interference map based on the target pattern, the interference map defining areas of constructive interference and areas of destructive interference between at least one of the features to be imaged and a field area adjacent the at least one feature; and placing assist features in the mask design based on the areas of constructive interference and the areas of destructive interference.

4. 发明申请

US20050074677A1 Scattering bar OPC application method for sub-half wavelength lithography patterning 有权
标题翻译：散射棒用于半波长光刻图案的OPC应用方法
公开(公告)号：US20050074677A1
公开(公告)日：2005-04-07
申请号：US10880376
申请日：2004-06-30
申请人： Thomas Laidig , Kurt Wampler , Douglas Broeke , Jang Chen
发明人： Thomas Laidig , Kurt Wampler , Douglas Broeke , Jang Chen
IPC分类号： G03F1/00 , G03F1/36 , G03F7/20 , G03F9/00 , G06F17/00 , G06F17/50 , H01L21/00 , H01L21/027
CPC分类号： G03F1/36
摘要： A method of forming a mask having optical proximity correction features, which includes the steps of obtaining a target pattern of features to be imaged, expanding the width of the features to be imaged, modifying the mask to include assist features which are placed adjacent the edges of the features to be imaged, where the assist features have a length corresponding to the expanded width of the features to be imaged, and returning the features to be imaged from the expanded width to a width corresponding to the target pattern.
摘要翻译：一种形成具有光学邻近校正特征的掩模的方法，其包括以下步骤：获得要成像的特征的目标图案，扩大要成像的特征的宽度，修改掩模以包括邻近边缘的辅助特征的要成像的特征，其中辅助特征具有对应于要成像的特征的扩展宽度的长度，以及将要成像的特征从扩展宽度返回到对应于目标图案的宽度。

5. 发明申请

US20050053848A1 Method, program product and apparatus for generating assist features utilizing an image field map 有权
标题翻译：用于利用图像场图产生辅助特征的方法，程序产品和装置
公开(公告)号：US20050053848A1
公开(公告)日：2005-03-10
申请号：US10878490
申请日：2004-06-29
申请人： Kurt Wampler , Douglas Van Den Broeke , Uwe Hollerbach , Xuelong Shi , Jang Chen
发明人： Kurt Wampler , Douglas Van Den Broeke , Uwe Hollerbach , Xuelong Shi , Jang Chen
IPC分类号： G03F1/00 , G03F1/36 , G03F7/20 , G03F9/00 , G06F17/00 , H01L21/00 , H01L21/027
CPC分类号： G03F1/36 , G03F7/70433 , G03F7/70441
摘要： Disclosed concepts include a method, program product and apparatus for generating assist features for a pattern to be formed on the surface of a substrate by generating an image field map corresponding to the pattern. Characteristics are extracted from the image field map, and assist features are generated for the pattern in accordance with the characteristics extracted in step. The assist features may be oriented relative to a dominant axis of a contour of the image field map. Also, the assist features may be polygon-shaped and sized to surround the contour or relative to the inside of the contour. Moreover, the assist features may be placed in accordance with extrema identified from the image field map. Utilizing the image field map, a conventional and complex two-dimensional rules-based approach for generating assist feature can be obviated.
摘要翻译：所公开的概念包括通过产生对应于图案的图像场图来产生要形成在基板的表面上的图案的辅助特征的方法，程序产品和装置。从图像场图中提取特征，并根据步骤中提取的特征为图案生成辅助特征。辅助特征可以相对于图像场图的轮廓的主轴定向。此外，辅助特征可以是多边形形状并且尺寸设计成围绕轮廓或相对于轮廓的内部。此外，可以根据从图像场地图识别的极值放置辅助特征。利用图像场图，可以避免用于产生辅助特征的常规和复杂的基于二维规则的方法。

6. 发明申请

US20050142470A1 Feature optimization using interference mapping lithography 有权
标题翻译：使用干涉映射光刻技术进行特征优化
公开(公告)号：US20050142470A1
公开(公告)日：2005-06-30
申请号：US10975342
申请日：2004-10-29
申请人： Robert Socha , Xuelong Shi , Douglas Broeke , Jang Chen
发明人： Robert Socha , Xuelong Shi , Douglas Broeke , Jang Chen
IPC分类号： G03F1/14 , G06F17/50 , G03C5/00
CPC分类号： G03F7/70441 , G03F1/36 , G03F7/70125
摘要： Disclosed concepts include a method of, and program product for, optimizing an illumination profile of a pattern to be formed in a surface of a substrate relative to a given mask. Steps include mathematically representing resolvable feature(s) from the given mask, generating an interference map representation from the previous step, modifying the interference map representation to maximize intensity corresponding to the resolvable features, and determining assist feature size(s) such that intensity side lobes do not print.
摘要翻译：公开的概念包括用于优化相对于给定掩模在衬底表面中形成的图案的照明轮廓的方法和程序产品。步骤包括在数学上表示来自给定掩码的可解析特征，从前一步骤生成干涉图表示，修改干涉图表示以最大化对应于可解析特征的强度，以及确定辅助特征尺寸，使强度侧裂片不打印。

7. 发明申请

US20080067143A1 CPL mask and a method and program product for generating the same 有权
标题翻译： CPL掩码和用于生成CPL掩码的方法和程序产品
公开(公告)号：US20080067143A1
公开(公告)日：2008-03-20
申请号：US11822538
申请日：2007-07-06
申请人： Douglas Broeke , Kurt Wampler , Jang Chen
发明人： Douglas Broeke , Kurt Wampler , Jang Chen
IPC分类号： C25F3/00
CPC分类号： G03F1/32 , G03F1/34
摘要： A method of generating a mask for printing a pattern including a plurality of features. The method includes the steps of depositing a layer of transmissive material having a predefined percentage transmission on a substrate; depositing a layer of opaque material on the transmissive material; etching a portion of the substrate, the substrate being etched to a depth based on an etching selectivity between the transmissive layer and the substrate; exposing a portion of the transmissive layer by etching the opaque material; etching the exposed portion of the transmissive layer so as to expose an upper surface of the substrate; where the exposed portions of the substrate and the etched portions of the substrate exhibit a predefined phase shift relative to one another with respect to an illumination signal.
摘要翻译：一种生成用于打印包括多个特征的图案的掩模的方法。该方法包括以下步骤：在衬底上沉积具有预定百分比透射率的透射材料层; 在透射材料上沉积不透明材料层; 蚀刻衬底的一部分，基于在透射层和衬底之间的蚀刻选择性，将衬底蚀刻到深度; 通过蚀刻不透明材料暴露透射层的一部分; 蚀刻透射层的暴露部分以暴露衬底的上表面; 其中衬底的暴露部分和衬底的蚀刻部分相对于照明信号相对于彼此表现出预定的相移。

8. 发明申请

US20050125765A1 Method and apparatus for decomposing semiconductor device patterns into phase and chrome regions for chromeless phase lithography 有权
标题翻译：将半导体器件图案分解为无铬相光刻的相位和铬区域的方法和装置
公开(公告)号：US20050125765A1
公开(公告)日：2005-06-09
申请号：US11035737
申请日：2005-01-18
申请人： Doug Broeke , Jang Chen , Thomas Laidig , Kurt Wampler , Stephen Hsu
发明人： Doug Broeke , Jang Chen , Thomas Laidig , Kurt Wampler , Stephen Hsu
IPC分类号： G03F1/00 , G03F7/20 , H01L21/027 , G06F17/50 , G03F9/00 , G21K5/00
CPC分类号： G03F1/34 , G03F1/36 , G03F7/70125 , G03F7/70425 , G03F7/70466 , G03F7/70941
摘要： A method of generating a mask of use in printing a target pattern on a substrate. The method includes the steps of (a) determining a maximum width of features to be imaged on the substrate utilizing phase-structures formed in the mask; (b) identifying all features contained in the target pattern having a width which is equal to or less than the maximum width; (c) extracting all features having a width which is equal to or less than the maximum width from the target pattern; (d) forming phase-structures in the mask corresponding to all features identified in step (b); and (e) forming opaque structures in the mask for all features remaining in target pattern after performing step (c).
摘要翻译：一种生成用于在基板上印刷目标图案的掩模的方法。该方法包括以下步骤：（a）使用形成在掩模中的相位结构来确定要在基板上成像的特征的最大宽度; （b）识别具有等于或小于最大宽度的宽度的目标图案中包含的所有特征; （c）从目标图案提取具有等于或小于最大宽度的宽度的所有特征; （d）在对应于在步骤（b）中识别的所有特征的掩模中形成相位结构; 和（e）在执行步骤（c）之后，在掩模中形成不透明结构以保持目标图案中的所有特征。

9. 发明申请

US20050186491A1 Method for improved lithographic patterning utilizing multiple coherency optimized exposures and high transmission attenuated PSM 有权
公开(公告)号：US20050186491A1
公开(公告)日：2005-08-25
申请号：US11108665
申请日：2005-04-19
申请人： Michael Hsu , Stephen Hsu , Thomas Laidig , Douglas Broeke , Jang Chen
发明人： Michael Hsu , Stephen Hsu , Thomas Laidig , Douglas Broeke , Jang Chen
IPC分类号： G03F1/00 , G03F7/20 , H01L21/027 , G03F7/00
CPC分类号： G03F1/32 , G03F7/70091 , G03F7/70125 , G03F7/70283 , G03F7/70466 , G03F7/70591
摘要： A method for optically transferring a lithographic pattern corresponding to an integrated circuit utilizing a high transmission attenuated phase-shift mask onto a semiconductor substrate by use of an optical exposure tool. The method comprising the steps of generating a diffraction pattern corresponding to the lithographic pattern, where the diffraction pattern indicates a plurality of spatial frequency components corresponding to the lithographic pattern; determining which of the spatial frequency components need to be captured by a lens in the optical exposure tool in order to accurately reproduce the lithographic pattern; determining a set of illumination conditions required for the optical exposure tool to capture the spatial frequency components necessary for accurately reproducing the lithographic pattern; and illuminating the high transmission attenuated phase-shift mask with this set of illumination conditions.

10. 发明申请

US20050034096A1 Method of identifying an extreme interaction pitch region, methods of designing mask patterns and manufacturing masks, device manufacturing methods and computer programs 有权
标题翻译：识别极端相互作用间距区域的方法，设计掩模图案和制造掩模的方法，设备制造方法和计算机程序
公开(公告)号：US20050034096A1
公开(公告)日：2005-02-10
申请号：US10938510
申请日：2004-09-13
申请人： Xuelong Shi , Jang Chen , Duan-Fu Hsu
发明人： Xuelong Shi , Jang Chen , Duan-Fu Hsu
IPC分类号： G03F1/08 , G03F7/20 , H01L21/027 , G06F17/50
CPC分类号： G03F7/705 , G03F7/70125 , G03F7/70433 , G03F7/70441
摘要： Optical proximity effects (OPEs) are a well-known phenomenon in photolithography. OPEs result from the structural interaction between the main feature and neighboring features. It has been determined by the present inventors that such structural interactions not only affect the critical dimension of the main feature at the image plane, but also the process latitude of the main feature. Moreover, it has been determined that the variation of the critical dimension as well as the process latitude of the main feature is a direct consequence of light field interference between the main feature and the neighboring features. Depending on the phase of the field produced by the neighboring features, the main feature critical dimension and process latitude can be improved by constructive light field interference, or degraded by destructive light field interference. The phase of the field produced by the neighboring features is dependent on the pitch as well as the illumination angle. For a given illumination, the forbidden pitch region is the location where the field produced by the neighboring features interferes with the field of the main feature destructively. The present invention provides a method for determining and eliminating the forbidden pitch region for any feature size and illumination condition. Moreover, it provides a method for performing illumination design in order to suppress the forbidden pitch phenomena, and for optimal placement of scattering bar assist features.
摘要翻译：光学邻近效应（OPE）在光刻中是众所周知的现象。 OPE由主要特征和相邻特征之间的结构相互作用产生。本发明人已经确定，这种结构相互作用不仅影响主要特征在图像平面上的临界尺寸，而且还影响主要特征的工艺纬度。此外，已经确定临界尺寸的变化以及主要特征的过程纬度是主要特征和相邻特征之间的光场干扰的直接后果。根据相邻特征产生的场的相位，主要特征临界尺寸和工艺纬度可以通过建设性的光场干涉来改善，或者由于破坏性的光场干扰而降低。由相邻特征产生的场的相位取决于俯仰以及照明角度。对于给定的照明，禁止的音调区域是相邻特征产生的场相当地干扰主要特征的场的位置。本发明提供一种用于确定和消除任何特征尺寸和照明条件的禁止间距区域的方法。此外，它提供了一种用于执行照明设计以便抑制禁止音调现象以及用于散射棒辅助特征的最佳布置的方法。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式