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    • 5. 发明申请
    • TRANSISTOR COMPONENT HAVING A SHIELDING STRUCTURE
    • 具有屏蔽结构的晶体管元件
    • US20100264467A1
    • 2010-10-21
    • US12426008
    • 2009-04-17
    • Dethard PetersPeter FriedrichsRudolf ElpeltLarissa Wehrhahn-KilianMichael TreuRoland Rupp
    • Dethard PetersPeter FriedrichsRudolf ElpeltLarissa Wehrhahn-KilianMichael TreuRoland Rupp
    • H01L29/812
    • H01L29/8083H01L29/0657H01L29/1066H01L29/8122
    • A transistor component having a shielding structure. One embodiment provides a source terminal, a drain terminal and control terminal. A source zone of a first conductivity type is connected to the source terminal. A drain zone of the first conductivity type is connected to the drain terminal. A drift zone is arranged between the source zone and the drain zone. A junction control structure is provided for controlling a junction zone in the drift zone between the drain zone and the source zone, at least including one control zone. A shielding structure is arranged in the drift zone between the junction control structure and the drain zone and at least includes a shielding zone of a second conductivity type being complementarily to the first conductivity type. The shielding zone is connected to a terminal for a shielding potential. The at least one control zone and the at least one shielding zone have different geometries or different orientations in a plain that is perpendicular to a current flow direction of the component.
    • 具有屏蔽结构的晶体管组件。 一个实施例提供了源极端子,漏极端子和控制端子。 第一导电类型的源极区域连接到源极端子。 第一导电类型的漏极区域连接到漏极端子。 漂移区设置在源区和排水区之间。 提供了结点控制结构,用于控制在漏区和源区之间的漂移区中的接合区,至少包括一个控制区。 屏蔽结构布置在结点控制结构和漏区之间的漂移区中,并且至少包括与第一导电类型互补的第二导电类型的屏蔽区。 屏蔽区域与屏蔽电位端子相连。 所述至少一个控制区域和所述至少一个屏蔽区域在垂直于所述部件的当前流动方向的平原中具有不同的几何形状或不同取向。
    • 7. 发明授权
    • Method for adjusting the data transmission rate in a fieldbus system
    • 调整现场总线系统数据传输速率的方法
    • US07020711B2
    • 2006-03-28
    • US10071035
    • 2002-02-08
    • Roland RuppKlaus WohnhaasHans Schwenkel
    • Roland RuppKlaus WohnhaasHans Schwenkel
    • G06F15/16
    • H04L12/4013G05B2219/31135H04L12/403H04L2012/40215H04L2012/4026Y02D50/10
    • The invention relates to a method for adjusting the data transmission rate in a fieldbus system (10) which is suitable to control safety-critical processes and which comprises at least one subscriber (12, 14) connected to a fieldbus (20), wherein in a first phase the subscriber/subscribers log on at a unit (30/central unit) centrally connected to the fieldbus with a first low data transmission rate. In a second phase the central unit (30) sets the data transmission rate at the subscriber/subscribers (12, 14) to a predetermined higher second value. In a third phase the subscriber/subscribers (12, 14) log on again at the central unit with a higher data transmission rate; and the central unit (30) shuts down the fieldbus (20) if it detects a deviation of the number of subscribers (12, 14) logged on in the first and the third phase. The invention also relates to a fieldbus system for implementing said method
    • 本发明涉及一种用于调整现场总线系统(10)中的数据传输速率的方法,其适用于控制安全关键过程,并且包括至少一个连接到现场总线(20)的用户(12,14),其中, 用户/用户以与第一低数据传输速率集中连接到现场总线的单元(30 /中央单元)登录的第一阶段。 在第二阶段,中央单元(30)将用户/订户(12,14)处的数据传输速率设置为预定的较高的第二值。 在第三阶段,用户/用户(12,14)在中央单元上再次登录具有较高的数据传输速率; 并且如果中央单元(30)检测到在第一和第三阶段中登录的用户数量(12,14)的偏差,则中央单元(30)关闭现场总线(20)。 本发明还涉及一种用于实现所述方法的现场总线系统
    • 9. 发明授权
    • Temperature sensor having a p-n junction
    • 具有p-n结的温度传感器
    • US5821599A
    • 1998-10-13
    • US571867
    • 1996-01-05
    • Roland Rupp
    • Roland Rupp
    • G01K7/01H01L31/058H01L31/0312
    • G01K7/01H01L2924/0002
    • A temperature sensor has a doped first semiconductor region having a band gap greater than 2 eV and an oppositely doped second semiconductor region also having a band gap greater than 2 eV. The second semiconductor region is adjacent to the first semiconductor region, forming a p-n junction. A source and a drain electrode are connected to each other through the first semiconductor region. The electrical characteristics of the sensor are affected by temperature. Temperature is measured by applying a specified voltage across the electrodes and measuring the resulting current, or by applying a specified current and measuring the resulting voltage.
    • PCT No.PCT / DE94 / 00347 Sec。 371日期1996年1月5日 102(e)日期1996年1月5日PCT 1994年3月28日PCT公布。 公开号WO95 / 02172 日期1995年1月19日温度传感器具有带隙大于2eV的掺杂的第一半导体区域以及也具有大于2eV的带隙的相对掺杂的第二半导体区域。 第二半导体区域与第一半导体区域相邻,形成p-n结。 源极和漏极通过第一半导体区域彼此连接。 传感器的电气特性受温度的影响。 通过在电极两端施加规定的电压并测量所得到的电流,或者通过施加指定的电流并测量所得到的电压来测量温度。