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1. 发明申请

US20080099807A1 LOW-VOLTAGE IMAGE SENSOR AND METHOD OF DRIVING TRANSFER TRANSISTOR THEREOF 有权
标题翻译：低电压图像传感器及其驱动转换晶体管的方法
公开(公告)号：US20080099807A1
公开(公告)日：2008-05-01
申请号：US11875513
申请日：2007-10-19
申请人： Mi Kim , Bong Mheen , Young Song , Seong Park
发明人： Mi Kim , Bong Mheen , Young Song , Seong Park
IPC分类号： H01L27/146 , H04N5/335
CPC分类号： H01L27/14603 , H01L27/14609 , H04N5/361 , H04N5/365 , H04N5/3745
摘要： Provided are a low-voltage image sensor and a method of driving a transfer transistor thereof, which are obtained by changing the structure and driving method of a typical transfer transistor of a 4-transistor CMOS transistor, and can eliminate the influence of a voltage or physical structure of a diffusion node on a reset or transfer operation of a photodiode. The image sensor includes a light receiving device for detecting light and a signal conversion unit for reading photocharge generated by the light receiving device to an external circuit. The signal conversion unit includes a transfer transistor including at least two gate electrodes. When the photocharge is transferred to a channel of a transfer gate electrode disposed closest to a photodiode, a transfer gate electrode disposed adjacent to a diffusion node remains turned off.
摘要翻译：提供了通过改变4晶体管CMOS晶体管的典型转移晶体管的结构和驱动方法获得的低压图像传感器和驱动其传输晶体管的方法，并且可以消除电压或在光电二极管复位或传输操作时扩散节点的物理结构。图像传感器包括用于检测光的光接收装置和用于将由光接收装置产生的光电荷读取到外部电路的信号转换单元。信号转换单元包括至少两个栅电极的转移晶体管。当光电荷转移到最靠近光电二极管设置的传输栅电极的沟道时，与扩散节点相邻设置的传输栅电极保持关闭。

2. 发明申请

US20070158710A1 Low-noise image sensor and transistor for image sensor 审中-公开
标题翻译：低噪声图像传感器和图像传感器晶体管
公开(公告)号：US20070158710A1
公开(公告)日：2007-07-12
申请号：US11633887
申请日：2006-12-05
申请人： Bong Mheen , Mi Kim , Young Song
发明人： Bong Mheen , Mi Kim , Young Song
IPC分类号： H01L31/113 , H01L31/062
CPC分类号： H01L27/14614 , H01L27/14601 , H01L27/14603
摘要： Provided are a low-noise image sensor capable of improving the efficiency of charge transfer from a photodiode to a diffusion node region and effectively suppressing the generation of dark current, and a transistor for the image sensor. The image sensor includes: a photosensitive pixel having a transfer transistor formed in a structure which causes hole accumulation in a part or all regions of a gate oxide; and a sensing control part applying a negative offset potential to the gate during a part or whole of a turn-off period of the transfer transistor. When the transfer transistor is off, the image sensor may form a sufficient barrier and accumulate electrons in the photodiode, and when the transistor is on, the sensor sufficiently lowers a barrier, fully depletes the photodiode before the transfer transistor reaches a threshold voltage, and inactivates a trap in a predetermined region for a certain time, and thus the dark current can be reduced.
摘要翻译：提供了能够提高从光电二极管到扩散节点区域的电荷转移效率并有效抑制暗电流的产生的低噪声图像传感器，以及用于图像传感器的晶体管。图像传感器包括：具有转移晶体管的感光像素，该转移晶体管形成为在栅极氧化物的一部分或全部区域中引起空穴积累的结构; 以及在转移晶体管的关断周期的一部分或全部期间向栅极施加负偏移电位的感测控制部分。当转移晶体管截止时，图像传感器可能形成足够的势垒并在光电二极管中积聚电子，并且当晶体管导通时，传感器充分降低势垒，在转移晶体管达到阈值电压之前完全耗尽光电二极管，使预定区域中的陷阱钝化一定时间，从而可以减小暗电流。

3. 发明申请

US20070145239A1 Image sensor and method of driving transfer transistor of image sensor 有权
标题翻译：图像传感器和驱动图像传感器传输晶体管的方法
公开(公告)号：US20070145239A1
公开(公告)日：2007-06-28
申请号：US11635174
申请日：2006-12-07
申请人： Bong Mheen , Mi Kim , Young Song
发明人： Bong Mheen , Mi Kim , Young Song
IPC分类号： H01L27/00
CPC分类号： H04N5/3597 , H01L27/14603 , H01L27/14609 , H04N5/357 , H04N5/361 , H04N5/3745
摘要： Provided is a 4-transistor CMOS image in which a driving condition or a pixel structure is changed so that a transfer transistor in a pixel operates in a pinch-off condition during reset and transfer operations in order to reduce dark current and fixed-pattern noise caused by a change in an operation condition of the transfer transistor and inter-pixel characteristic discrepancy. The image sensor includes a photosensitive pixel including a transfer transistor for transferring photon-induced charges created in a photodiode; and a voltage control unit for controlling a turn-on voltage applied to a gate of the transfer transistor to be lower than a floating diffusion node voltage plus the threshold voltage of the transfer transistor during a partial or entire section of a turn-on section of the transfer transistor such that the transfer transistor operates in a pseudo pinch-off mode.
摘要翻译：提供了一种4晶体管CMOS图像，其中改变驱动条件或像素结构，使得像素在复位和传输操作期间在夹断状态下工作，以减少暗电流和固定图案噪声由转移晶体管的操作条件的变化和像素间特性差异引起。图像传感器包括光敏像素，其包括用于传输在光电二极管中产生的光子感应电荷的转移晶体管; 以及电压控制单元，用于在所述转移晶体管的导通部分的部分或整个部分期间将施加到所述转移晶体管的栅极的导通电压控制为低于浮置扩散节点电压加上所述转移晶体管的阈值电压转移晶体管使得转移晶体管以伪夹断模式工作。

4. 发明申请

US20060125460A1 Reference current generator 有权
标题翻译：参考电流发生器
公开(公告)号：US20060125460A1
公开(公告)日：2006-06-15
申请号：US11299188
申请日：2005-12-09
申请人： Bong Mheen , Min Cho , Chong Kwon , Jin Kang
发明人： Bong Mheen , Min Cho , Chong Kwon , Jin Kang
IPC分类号： G05F3/16 , G05F3/20
CPC分类号： G05F3/30 , G05F3/262
摘要： Provided is a low-reference-current generator that includes a circuit employing two feedback loops enabling it to operate even at a low voltage, has a high power supply rejection ratio (PSRR) to control power supply noise, and simply forms a voltage without a voltage-to-current converter used in a conventional general reference current generator. The reference current generator includes: a first voltage generator receiving a predetermined current and generating a first voltage that decreases as temperature increases; a second voltage generator generating a second voltage that increases as temperature increases; a first current generator generating a first current corresponding to the first voltage; a second current generator generating a second current corresponding to the second voltage; and a reference current generator receiving the first current and the second current and generating a reference current that is the sum of the first current and the second current.
摘要翻译：提供了一种低参考电流发生器，其包括使用两个反馈回路的电路，使得其能够在低电压下操作，具有高电源抑制比（PSRR）以控制电源噪声，并且简单地形成电压，而不需要用于常规通用参考电流发生器的电压 - 电流转换器。参考电流发生器包括：接收预定电流并产生随温度升高而降低的第一电压的第一电压发生器; 产生随着温度升高而增加的第二电压的第二电压发生器; 产生对应于第一电压的第一电流的第一电流发生器; 产生对应于第二电压的第二电流的第二电流发生器; 以及参考电流发生器，接收第一电流和第二电流，并产生作为第一电流和第二电流之和的参考电流。

5. 发明申请

US20060108613A1 CMOS image sensor 审中-公开
标题翻译： CMOS图像传感器
公开(公告)号：US20060108613A1
公开(公告)日：2006-05-25
申请号：US11166639
申请日：2005-06-24
申请人： Young Joo Song , Bong Mheen , Jin Kang
发明人： Young Joo Song , Bong Mheen , Jin Kang
IPC分类号： H01L27/148
CPC分类号： H01L27/14603 , H01L27/14601
摘要： Provided is a CMOS image sensor including a pinned photodiode and a transfer transistor. The CMOS image sensor includes: a substrate; a gate electrode disposed on the substrate and electrically isolated from the substrate by a gate insulating layer; a first floating region disposed in the substrate of one side of the gate electrode; a first impurity region for a photodiode disposed in the substrate of the other side of the gate electrode; a second floating region disposed in the substrate between the first impurity region for the photodiode and the gate electrode; and a second impurity region for the photodiode disposed in a surface portion of the substrate including the first impurity region for the photodiode and the second floating region.
摘要翻译：提供了包括钉扎光电二极管和转移晶体管的CMOS图像传感器。 CMOS图像传感器包括：基板; 栅电极，设置在所述基板上，并通过栅极绝缘层与所述基板电隔离; 设置在所述栅电极的一侧的基板中的第一浮置区域; 用于设置在栅极电极的另一侧的基板中的光电二极管的第一杂质区域; 布置在所述基板中的用于所述光电二极管的所述第一杂质区域和所述栅电极之间的第二浮置区域; 以及用于光电二极管的第二杂质区域，设置在包括用于光电二极管的第一杂质区域和第二浮动区域的基板的表面部分中。

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