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1. 发明申请

US20060125460A1 Reference current generator 有权
标题翻译：参考电流发生器
公开(公告)号：US20060125460A1
公开(公告)日：2006-06-15
申请号：US11299188
申请日：2005-12-09
申请人： Bong Mheen , Min Cho , Chong Kwon , Jin Kang
发明人： Bong Mheen , Min Cho , Chong Kwon , Jin Kang
IPC分类号： G05F3/16 , G05F3/20
CPC分类号： G05F3/30 , G05F3/262
摘要： Provided is a low-reference-current generator that includes a circuit employing two feedback loops enabling it to operate even at a low voltage, has a high power supply rejection ratio (PSRR) to control power supply noise, and simply forms a voltage without a voltage-to-current converter used in a conventional general reference current generator. The reference current generator includes: a first voltage generator receiving a predetermined current and generating a first voltage that decreases as temperature increases; a second voltage generator generating a second voltage that increases as temperature increases; a first current generator generating a first current corresponding to the first voltage; a second current generator generating a second current corresponding to the second voltage; and a reference current generator receiving the first current and the second current and generating a reference current that is the sum of the first current and the second current.
摘要翻译：提供了一种低参考电流发生器，其包括使用两个反馈回路的电路，使得其能够在低电压下操作，具有高电源抑制比（PSRR）以控制电源噪声，并且简单地形成电压，而不需要用于常规通用参考电流发生器的电压 - 电流转换器。参考电流发生器包括：接收预定电流并产生随温度升高而降低的第一电压的第一电压发生器; 产生随着温度升高而增加的第二电压的第二电压发生器; 产生对应于第一电压的第一电流的第一电流发生器; 产生对应于第二电压的第二电流的第二电流发生器; 以及参考电流发生器，接收第一电流和第二电流，并产生作为第一电流和第二电流之和的参考电流。

2. 发明申请

US20060108613A1 CMOS image sensor 审中-公开
标题翻译： CMOS图像传感器
公开(公告)号：US20060108613A1
公开(公告)日：2006-05-25
申请号：US11166639
申请日：2005-06-24
申请人： Young Joo Song , Bong Mheen , Jin Kang
发明人： Young Joo Song , Bong Mheen , Jin Kang
IPC分类号： H01L27/148
CPC分类号： H01L27/14603 , H01L27/14601
摘要： Provided is a CMOS image sensor including a pinned photodiode and a transfer transistor. The CMOS image sensor includes: a substrate; a gate electrode disposed on the substrate and electrically isolated from the substrate by a gate insulating layer; a first floating region disposed in the substrate of one side of the gate electrode; a first impurity region for a photodiode disposed in the substrate of the other side of the gate electrode; a second floating region disposed in the substrate between the first impurity region for the photodiode and the gate electrode; and a second impurity region for the photodiode disposed in a surface portion of the substrate including the first impurity region for the photodiode and the second floating region.
摘要翻译：提供了包括钉扎光电二极管和转移晶体管的CMOS图像传感器。 CMOS图像传感器包括：基板; 栅电极，设置在所述基板上，并通过栅极绝缘层与所述基板电隔离; 设置在所述栅电极的一侧的基板中的第一浮置区域; 用于设置在栅极电极的另一侧的基板中的光电二极管的第一杂质区域; 布置在所述基板中的用于所述光电二极管的所述第一杂质区域和所述栅电极之间的第二浮置区域; 以及用于光电二极管的第二杂质区域，设置在包括用于光电二极管的第一杂质区域和第二浮动区域的基板的表面部分中。

3. 发明申请

US20150150464A1 Systems and Methods for Real-Time Tracking of Photoacoustic Sensing 有权
标题翻译：光声感测实时跟踪系统与方法
公开(公告)号：US20150150464A1
公开(公告)日：2015-06-04
申请号：US14561087
申请日：2014-12-04
申请人： Emad Boctor , Behnoosh Tavakoli , Hyun-Jae Kang , Xiaoyu Guo , Jin Kang
发明人： Emad Boctor , Behnoosh Tavakoli , Hyun-Jae Kang , Xiaoyu Guo , Jin Kang
IPC分类号： A61B5/00 , A61B8/08 , A61B19/00 , A61B5/01
CPC分类号： A61B5/0095 , A61B5/0084 , A61B5/015 , A61B5/4509 , A61B5/7246 , A61B5/7275 , A61B5/7282 , A61B8/12 , A61B8/485 , A61B8/5253 , A61B34/20 , A61B2034/2051 , A61B2034/2055 , A61B2576/02
摘要： Systems and methods for real-time tracking of photoacoustic sensing are provided. In one aspect, a method for performing in vivo analysis of a subject is provided. The method includes directing an electromagnetic excitation toward a subject to be analyzed, and acquiring, with an ultrasound probe, data about resultant waves caused by the electromagnetic excitation. The method also includes processing the acquired data to extract information related to properties of tissues in the subject, and comparing the information related to the properties of tissues in the subject using a set of criteria. The method also includes generating a report about a condition of the subject based on the comparison of the information related to properties of the tissues in the subject.
摘要翻译：提供了用于光声感测的实时跟踪的系统和方法。一方面，提供了一种用于进行受试者体内分析的方法。该方法包括向被分析对象引导电磁激励，并用超声波探头获取由电磁激励引起的合成波的数据。该方法还包括处理所获取的数据以提取与受试者中组织的属性相关的信息，并且使用一组标准来比较与对象中的组织的属性相关的信息。该方法还包括基于与对象中的组织的属性相关的信息的比较来生成关于对象的状况的报告。

4. 发明申请

US20130253313A1 AUTOFOCUSING ENDOSCOPE AND SYSTEM 审中-公开
标题翻译：自动注射内镜和系统
公开(公告)号：US20130253313A1
公开(公告)日：2013-09-26
申请号：US13813896
申请日：2011-08-02
申请人： Jin Kang , Marcin Arkadiusz Balicki , Rajesh Kumar , Russell H. Taylor
发明人： Jin Kang , Marcin Arkadiusz Balicki , Rajesh Kumar , Russell H. Taylor
IPC分类号： A61B1/00 , A61B3/10 , A61B1/07
CPC分类号： A61B1/00188 , A61B1/00004 , A61B1/00165 , A61B1/00172 , A61B1/0669 , A61B1/07 , A61B1/313 , A61B3/102 , A61B3/1225 , A61F9/007
摘要： An autofocusing endoscope includes an objective lens, a relay optical system arranged to relay an image between the objective lens and a proximal end of the autofocusing endoscope, an optical fiber arranged with a distal end proximate the objective lens, a light source arranged to couple light into the optical fiber, an optical detection system arranged to receive and detect light from the optical fiber, and a data processor constructed to communicate with the optical detection system while in operation. The data processor is configured to determine a distance of a surface to be imaged through the objective lens and provide instructions for adjusting a focus of the autofocusing endoscope of the surface.
摘要翻译：一种自动对焦内窥镜，包括：物镜;中继光学系统，被配置为中继所述物镜与所述自聚焦内窥镜的近端之间的图像，配置有靠近所述物镜的远端的光纤;光源，光纤检测系统被布置成接收和检测来自光纤的光;以及数据处理器，被构造成在操作中与光学检测系统进行通信。数据处理器被配置为确定要通过物镜成像的表面的距离，并提供用于调整表面的自动聚焦内窥镜的焦点的指令。

5. 发明申请

US20050017498A1 Pillar anchor and method for manufacturing the same 审中-公开
标题翻译：支柱锚及其制造方法
公开(公告)号：US20050017498A1
公开(公告)日：2005-01-27
申请号：US10897259
申请日：2004-07-22
申请人： Jin Kang
发明人： Jin Kang
IPC分类号： B60R22/24 , B60R22/00
CPC分类号： B21D53/88 , B21D35/00 , B60R22/24
摘要： The present invention relates to an improved pillar anchor and a method for manufacturing the same. According to the pillar anchor of the present invention described as above and the method for manufacturing the same, the rims of the pair of separated base plates abut each other, so that the surface in contact with the belt is formed in a “C”-shape. Thus, it is simple to manufacture the pillar anchor of the present invention, and moreover, the number of processes needed for manufacture is reduced. In addition, since the inner peripheral surfaces of the belt insertion holes around which the belt is wound are generally formed of only a steel plate, the friction coefficient between the belt and the inner peripheral surfaces of the belt insertion holes is reduced. Accordingly, when the belt is subjected to tension, damage caused from wear and tear of the belt due to the friction between the belt and the inner peripheral surfaces of the belt insertion holes is effectively reduced. Moreover, the belt can smoothly moves on the inner peripheral surfaces of the belt insertion holes.
摘要翻译：本发明涉及一种改进的支柱锚及其制造方法。根据如上所述的本发明的支柱锚及其制造方法，一对分离的基板的边缘彼此邻接，使得与带接触的表面形成为“C”形，形状。因此，制造本发明的支柱锚固件变得简单，此外，减少制造所需的工序数量。此外，由于带卷绕的带插入孔的内周面通常仅由钢板形成，所以带与带插入孔的内周面之间的摩擦系数降低。因此，当带受到张力时，由于带与带插入孔的内周面之间的摩擦而导致的带的磨损造成的损伤被有效地减少。此外，带可以在带插入孔的内周面上平滑地移动。

6. 发明授权

US6107396A Method of preparing a composite of organic and inorganic compounds 有权
标题翻译：制备有机和无机化合物复合物的方法
公开(公告)号：US6107396A
公开(公告)日：2000-08-22
申请号：US192864
申请日：1998-11-16
申请人： Ho-jin Kweon , Sung-soo Kim , Dong-gon Park , Jin Kang , Hye-young Kwon
发明人： Ho-jin Kweon , Sung-soo Kim , Dong-gon Park , Jin Kang , Hye-young Kwon
IPC分类号： C08K3/22 , C07C29/70 , C08F2/00 , C08L83/02 , C08J5/05
CPC分类号： C07C29/70
摘要： A method of preparing a composite of organic and inorganic compounds includes the steps of reacting a mixed solution of a metal alkoxide and a silicon-containing compound with a catalyst to produce an alcogel of a metal oxide or a complex metal oxide. The metal alkoxide is prepared by reacting at least one metal with an alcohol and the mixed solution is prepared by mixing the metal alkoxide with the silicon-containing compound. An alcogel is produced from the reacting step and alcohol is impregnated within the inorganic oxide lattice structure of the alcogel. Furthermore, the method of preparing a composite of an organic and an inorganic compound includes the steps of centrifuging the alcogel to separate any alcohol from the alcogel to form a gel, adding an organic monomer the gel and polymerizing the organic monomer in-situ to form an organic polymer. The resulting composite has characteristics of both the parent organic and inorganic compounds.
摘要翻译：制备有机和无机化合物复合物的方法包括使金属醇盐和含硅化合物的混合溶液与催化剂反应以产生金属氧化物或复合金属氧化物的醇酸盐的步骤。金属醇盐通过使至少一种金属与醇反应制备，并且通过将金属醇盐与含硅化合物混合来制备混合溶液。由反应步骤产生酸酐，并将醇浸渍在铝酸盐的无机氧化物晶格结构内。此外，制备有机和无机化合物的复合物的方法包括以下步骤：离心凝胶以从凝胶中分离任何醇以形成凝胶，加入有机单体凝胶并原位聚合有机单体以形成有机聚合物。所得复合材料具有母体有机和无机化合物的特征。

7. 发明授权

US09723995B2 Systems and methods for real-time tracking of photoacoustic sensing 有权
公开(公告)号：US09723995B2
公开(公告)日：2017-08-08
申请号：US14561087
申请日：2014-12-04
申请人： Emad Boctor , Behnoosh Tavakoli , Hyun-Jae Kang , Xiaoyu Guo , Jin Kang
发明人： Emad Boctor , Behnoosh Tavakoli , Hyun-Jae Kang , Xiaoyu Guo , Jin Kang
IPC分类号： A61B8/12 , A61B5/00 , A61B8/08 , A61B5/01 , A61B34/20
CPC分类号： A61B5/0095 , A61B5/0084 , A61B5/015 , A61B5/4509 , A61B5/7246 , A61B5/7275 , A61B5/7282 , A61B8/12 , A61B8/485 , A61B8/5253 , A61B34/20 , A61B2034/2051 , A61B2034/2055 , A61B2576/02
摘要： Systems and methods for real-time tracking of photoacoustic sensing are provided. In one aspect, a method for performing in vivo analysis of a subject is provided. The method includes directing an electromagnetic excitation toward a subject to be analyzed, and acquiring, with an ultrasound probe, data about resultant waves caused by the electromagnetic excitation. The method also includes processing the acquired data to extract information related to properties of tissues in the subject, and comparing the information related to the properties of tissues in the subject using a set of criteria. The method also includes generating a report about a condition of the subject based on the comparison of the information related to properties of the tissues in the subject.

8. 发明申请

US20070287234A1 Bipolar transistor, BiCMOS device, and method for fabricating thereof 有权
标题翻译：双极晶体管，BiCMOS器件及其制造方法
公开(公告)号：US20070287234A1
公开(公告)日：2007-12-13
申请号：US11797071
申请日：2007-04-30
申请人： Jin Kang , Seung Lee , Kyoung Cho
发明人： Jin Kang , Seung Lee , Kyoung Cho
IPC分类号： H01L21/8249
CPC分类号： H01L21/84 , H01L21/8249 , H01L27/0623 , H01L27/1203 , H01L29/7371 , H01L29/78
摘要： Provided are bipolar transistor, BiCMOS device and method of fabricating thereof, in which an existing sub-collector disposed beneath a collector of a SiGe HBT is removed and a collector plug disposed at a lateral side of the collector is approached to a base when fabricating a Si-based very high-speed device, whereby it is possible to fabricate the SiGe HBT and an SOI CMOS on a single substrate, reduce the size of the device and the number of masks to be used, and implement the device of high density, low power consumption, and wideband performance.
摘要翻译：提供了双极晶体管，BiCMOS器件及其制造方法，其中去除了设置在SiGe HBT的集电极下方的现有子集电极，并且设置在集电极的横向侧的集电极端子在制造时基于Si的非常高速的器件，由此可以在单个衬底上制造SiGe HBT和SOI CMOS，减少器件的尺寸和使用的掩模的数量，并实现高密度的器件，低功耗，宽带性能。

9. 发明申请

US20050156682A1 Voltage-controlled oscillator using current feedback network 有权
标题翻译：使用电流反馈网络的压控振荡器
公开(公告)号：US20050156682A1
公开(公告)日：2005-07-21
申请号：US10957749
申请日：2004-10-05
申请人： Ja Lee , Sang Lee , Jin Kang , Seung Oh
发明人： Ja Lee , Sang Lee , Jin Kang , Seung Oh
IPC分类号： H03B5/08 , H03B1/00 , H03B5/12
CPC分类号： H03B5/1231 , H03B5/1215 , H03B5/1221 , H03B5/1243
摘要： Provided is a voltage-controlled oscillator (VCO) using a current feedback network for use in a wireless communication terminal. The voltage-controlled oscillator has high input impedance and low output impedance, so that a degree of isolation from the external load is excellent, thereby preventing degradation of the Q-factor by the load in overall oscillation circuit. In the voltage-controlled oscillator of the present invention, an LC resonator is provided to generate positive feedback, and negative resistance may be obtained at a wider frequency range by tuning a varactor of the LC resonator. And a boosting inductor is inserted into the positive feedback loop to have a greater negative resistance, therefore it is possible to prevent a problem in which the oscillation does not occur due to the parasitic resistance components generated during circuit fabrication.
摘要翻译：提供了一种使用电流反馈网络在无线通信终端中使用的压控振荡器（VCO）。压控振荡器具有高输入阻抗和低输出阻抗，使得与外部负载的隔离度优异，从而防止整个振荡电路中的负载对Q因子的劣化。在本发明的压控振荡器中，设置LC谐振器以产生正反馈，并且通过调谐LC谐振器的变容二极管可以在更宽的频率范围内获得负电阻。并且将增压电感器插入到正反馈回路中以具有更大的负电阻，因此可以防止由于在电路制造期间产生的寄生电阻分量而不发生振荡的问题。

10. 发明申请

US20080153294A1 METHOD FOR FORMING SELF ALIGNED CONTACTS FOR INTEGRATED CIRCUIT DEVICES 有权
标题翻译：用于形成用于集成电路设备的自对准接触的方法
公开(公告)号：US20080153294A1
公开(公告)日：2008-06-26
申请号：US11697287
申请日：2007-04-05
申请人： Jin Kang , Mingching Wang
发明人： Jin Kang , Mingching Wang
IPC分类号： H01L21/3065
CPC分类号： H01L21/02063 , H01L21/76831 , H01L21/76897
摘要： A method for processing integrated circuit devices including forming self aligned contact regions. The method includes providing a partially completed semiconductor wafer, the wafer including one or more semiconductor chips, where each of the chips including a plurality of MOS gate structures. Each of the gate structures is formed on a substrate and having a first layer of silicon nitride formed overlying portions including a contact region between the gate structures. Each of the chips has conformal layer of doped silicon glass of a predetermined thickness overlying the silicon nitride layer and the gate structures. The method then applies a plasma etching process to the doped silicon glass to expose a portion of the first silicon nitride layer using an anisotropic etching component to vertically remove portions of the doped silicon glass. A step of cleaning the exposed portion of silicon nitride using an isotropic component is also included. The method forms a second silicon nitride layer on the exposed portion of the second silicon nitride layer and removes the second silicon nitride layer and exposed portion of the first silicon nitride layer to expose the contract region on the substrate. The method processes the exposed contact region using a soft etching technique.
摘要翻译：一种用于处理集成电路器件的方法，包括形成自对准接触区域。该方法包括提供部分完成的半导体晶片，晶片包括一个或多个半导体芯片，其中每个芯片包括多个MOS栅极结构。栅极结构中的每一个形成在衬底上，并且具有形成在栅极结构之间的接触区域的覆盖部分的第一氮化硅层。每个芯片具有覆盖氮化硅层和栅极结构的预定厚度的掺杂硅玻璃的保形层。然后，该方法对掺杂的硅玻璃施加等离子体蚀刻工艺，以使用各向异性蚀刻部件暴露第一氮化硅层的一部分，以垂直去除掺杂的硅玻璃的部分。还包括使用各向同性组分清洁氮化硅的暴露部分的步骤。该方法在第二氮化硅层的暴露部分上形成第二氮化硅层，并且去除第二氮化硅层和第一氮化硅层的暴露部分以暴露衬底上的合约区域。该方法使用软蚀刻技术处理曝光的接触区域。

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