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    • 1. 发明申请
    • Image sensor and method of driving transfer transistor of image sensor
    • 图像传感器和驱动图像传感器传输晶体管的方法
    • US20070145239A1
    • 2007-06-28
    • US11635174
    • 2006-12-07
    • Bong MheenMi KimYoung Song
    • Bong MheenMi KimYoung Song
    • H01L27/00
    • H04N5/3597H01L27/14603H01L27/14609H04N5/357H04N5/361H04N5/3745
    • Provided is a 4-transistor CMOS image in which a driving condition or a pixel structure is changed so that a transfer transistor in a pixel operates in a pinch-off condition during reset and transfer operations in order to reduce dark current and fixed-pattern noise caused by a change in an operation condition of the transfer transistor and inter-pixel characteristic discrepancy. The image sensor includes a photosensitive pixel including a transfer transistor for transferring photon-induced charges created in a photodiode; and a voltage control unit for controlling a turn-on voltage applied to a gate of the transfer transistor to be lower than a floating diffusion node voltage plus the threshold voltage of the transfer transistor during a partial or entire section of a turn-on section of the transfer transistor such that the transfer transistor operates in a pseudo pinch-off mode.
    • 提供了一种4晶体管CMOS图像,其中改变驱动条件或像素结构,使得像素在复位和传输操作期间在夹断状态下工作,以减少暗电流和固定图案噪声 由转移晶体管的操作条件的变化和像素间特性差异引起。 图像传感器包括光敏像素,其包括用于传输在光电二极管中产生的光子感应电荷的转移晶体管; 以及电压控制单元,用于在所述转移晶体管的导通部分的部分或整个部分期间将施加到所述转移晶体管的栅极的导通电压控制为低于浮置扩散节点电压加上所述转移晶体管的阈值电压 转移晶体管使得转移晶体管以伪夹断模式工作。
    • 2. 发明申请
    • LOW-VOLTAGE IMAGE SENSOR AND METHOD OF DRIVING TRANSFER TRANSISTOR THEREOF
    • 低电压图像传感器及其驱动转换晶体管的方法
    • US20080099807A1
    • 2008-05-01
    • US11875513
    • 2007-10-19
    • Mi KimBong MheenYoung SongSeong Park
    • Mi KimBong MheenYoung SongSeong Park
    • H01L27/146H04N5/335
    • H01L27/14603H01L27/14609H04N5/361H04N5/365H04N5/3745
    • Provided are a low-voltage image sensor and a method of driving a transfer transistor thereof, which are obtained by changing the structure and driving method of a typical transfer transistor of a 4-transistor CMOS transistor, and can eliminate the influence of a voltage or physical structure of a diffusion node on a reset or transfer operation of a photodiode. The image sensor includes a light receiving device for detecting light and a signal conversion unit for reading photocharge generated by the light receiving device to an external circuit. The signal conversion unit includes a transfer transistor including at least two gate electrodes. When the photocharge is transferred to a channel of a transfer gate electrode disposed closest to a photodiode, a transfer gate electrode disposed adjacent to a diffusion node remains turned off.
    • 提供了通过改变4晶体管CMOS晶体管的典型转移晶体管的结构和驱动方法获得的低压图像传感器和驱动其传输晶体管的方法,并且可以消除电压或 在光电二极管复位或传输操作时扩散节点的物理结构。 图像传感器包括用于检测光的光接收装置和用于将由光接收装置产生的光电荷读取到外部电路的信号转换单元。 信号转换单元包括至少两个栅电极的转移晶体管。 当光电荷转移到最靠近光电二极管设置的传输栅电极的沟道时,与扩散节点相邻设置的传输栅电极保持关闭。
    • 3. 发明申请
    • Low-noise image sensor and transistor for image sensor
    • 低噪声图像传感器和图像传感器晶体管
    • US20070158710A1
    • 2007-07-12
    • US11633887
    • 2006-12-05
    • Bong MheenMi KimYoung Song
    • Bong MheenMi KimYoung Song
    • H01L31/113H01L31/062
    • H01L27/14614H01L27/14601H01L27/14603
    • Provided are a low-noise image sensor capable of improving the efficiency of charge transfer from a photodiode to a diffusion node region and effectively suppressing the generation of dark current, and a transistor for the image sensor. The image sensor includes: a photosensitive pixel having a transfer transistor formed in a structure which causes hole accumulation in a part or all regions of a gate oxide; and a sensing control part applying a negative offset potential to the gate during a part or whole of a turn-off period of the transfer transistor. When the transfer transistor is off, the image sensor may form a sufficient barrier and accumulate electrons in the photodiode, and when the transistor is on, the sensor sufficiently lowers a barrier, fully depletes the photodiode before the transfer transistor reaches a threshold voltage, and inactivates a trap in a predetermined region for a certain time, and thus the dark current can be reduced.
    • 提供了能够提高从光电二极管到扩散节点区域的电荷转移效率并有效抑制暗电流的产生的低噪声图像传感器,以及用于图像传感器的晶体管。 图像传感器包括:具有转移晶体管的感光像素,该转移晶体管形成为在栅极氧化物的一部分或全部区域中引起空穴积累的结构; 以及在转移晶体管的关断周期的一部分或全部期间向栅极施加负偏移电位的感测控制部分。 当转移晶体管截止时,图像传感器可能形成足够的势垒并在光电二极管中积聚电子,并且当晶体管导通时,传感器充分降低势垒,在转移晶体管达到阈值电压之前完全耗尽光电二极管, 使预定区域中的陷阱钝化一定时间,从而可以减小暗电流。
    • 8. 发明申请
    • Template type electrophoretic display and method of manufacturing the same
    • 模板型电泳显示器及其制造方法
    • US20080007516A1
    • 2008-01-10
    • US11901417
    • 2007-09-17
    • Seong AhnKyung SuhSeung KangYong LeeChul KimMeyoung JoungMi KimGun Lee
    • Seong AhnKyung SuhSeung KangYong LeeChul KimMeyoung JoungMi KimGun Lee
    • G09G3/34
    • G02F1/167
    • An electrophoretic display and a method of manufacturing the electrophoretic display are provided. The electrophoretic display includes an lower electrode formed on an under layer, an lower electrode protection layer formed on the lower electrode, an insulating template formed on the lower electrode protection layer and having a plurality of holes of smaller size than the wavelength of visible rays region, a dielectric fluid filling the holes and having a color, a plurality of charged particles suspended in the dielectric fluid filling each of the plurality of holes having a color different from the color of the dielectric fluid, and an upper electrode formed on the insulating template in sequential order. Accordingly, a problem of agglomeration of the charged particles can be solved by the insulating template having holes of smaller size than the wavelength of visible rays region, and thus a reliable electrophoretic display emitting light of one color or natural colors is achieved.
    • 提供电泳显示器和制造电泳显示器的方法。 电泳显示器包括形成在下层上的下电极,形成在下电极上的下电极保护层,形成在下电极保护层上的绝缘模板,并且具有比可见光区域的波长小的多个孔 填充所述孔并具有颜色的电介质流体,悬浮在所述介电流体中的多个带电粒子填充所述多个孔中的每一个具有不同于所述介电流体的颜色的颜色;以及形成在所述绝缘模板上的上电极 按顺序排列。 因此,可以通过具有比可见光区域的波长小的孔的绝缘模板来解决带电粒子的聚集问题,从而实现发出一种颜色或自然色的光的可靠的电泳显示。