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    • 5. 发明申请
    • MEMS CAPACITIVE DEVICE AND METHOD OF FORMING SAME
    • MEMS电容器及其形成方法
    • US20100214716A1
    • 2010-08-26
    • US12391083
    • 2009-02-23
    • Lianjun LiuMelvy F. Miller
    • Lianjun LiuMelvy F. Miller
    • H01G5/16H01L21/20H01L21/02
    • H01G5/011B81B3/0072B81B2201/0221H01G5/18H01L28/40H01L41/0973Y10T29/435
    • A MEMS capacitive device (90) includes a fixed capacitor plate (104) formed on a surface (102) of a substrate (100). A movable capacitor plate (114) is suspended above the fixed capacitor plate (104) by compliant members (116) anchored to the surface (102). A movable element (120) is positioned in spaced apart relationship from the movable capacitor plate (104) and has an actuator (130) formed thereon. Actuation of the actuator (130) causes abutment of a portion of the movable element (120) against a contact surface (136) of the movable plate (114). The abutment moves the movable plate (114) toward the fixed plate (104) to alter a capacitance (112) between the plates (104, 114). Another substrate (118) may be coupled to the substrate (100) such that a surface (126) of the substrate (118) faces the surface (102) of the substrate (100). The movable element (120) may be formed on the surface (126).
    • MEMS电容器件(90)包括形成在衬底(100)的表面(102)上的固定电容器板(104)。 可移动电容器板(114)通过锚固到表面(102)的柔性构件(116)悬置在固定电容器板(104)的上方。 可移动元件(120)与可移动电容器板(104)间隔开并且具有形成在其上的致动器(130)。 致动器(130)的致动导致可移动元件(120)的一部分抵靠可动板(114)的接触表面(136)。 抵靠将可移动板(114)移向固定板(104)以改变板(104,114)之间的电容(112)。 衬底(118)可以耦合到衬底(100),使得衬底(118)的表面(126)面向衬底(100)的表面(102)。 可移动元件(120)可以形成在表面(126)上。
    • 6. 发明授权
    • Method of making a semiconductor device, and semiconductor device made thereby
    • 制造半导体器件的方法和由此制成的半导体器件
    • US07306986B2
    • 2007-12-11
    • US11150499
    • 2005-06-09
    • Thomas P. RemmelSriram KalpatMelvy F. MillerPeter Zurcher
    • Thomas P. RemmelSriram KalpatMelvy F. MillerPeter Zurcher
    • H01L21/8242
    • H01L27/0682H01L23/5223H01L23/5228H01L28/20H01L28/40H01L2924/0002H01L2924/00
    • A method of making a semiconductor device includes the steps of: providing a semiconductor substrate (110, 510, 1010, 1610) having a patterned interconnect layer (120, 520, 1020, 1620) formed thereon; depositing a first dielectric material (130, 530, 1030, 1630) over the interconnect layer; depositing a first electrode material (140, 540, 1040, 1640) over the first dielectric material; depositing a second dielectric material (150, 550, 1050, 1650) over the first electrode material; depositing a second electrode material (160, 560, 1060, 1660) over the second dielectric material; patterning the second electrode material to form a top electrode (211, 611, 1111, 1611) of a first capacitor (210, 710, 1310, 1615); and patterning the first electrode material to form atop electrode (221, 721, 1221, 1621) of a second capacitor (220, 720, 1320, 1625), to form an electrode (212, 712, 1212, 1612) of the first capacitor, and to define a resistor (230, 730, 1330).
    • 制造半导体器件的方法包括以下步骤:提供具有形成在其上的图案化互连层(120,520,1020,1620)的半导体衬底(110,510,1010,1610) 在所述互连层上沉积第一介电材料(130,530,1030,1630); 在所述第一电介质材料上沉积第一电极材料(140,540,1040,1640); 在所述第一电极材料上沉积第二介电材料(150,550,1050,1650); 在所述第二电介质材料上沉积第二电极材料(160,560,1060,1660); 图案化第二电极材料以形成第一电容器(210,710,1310,1615)的顶部电极(211,611,1111,1611); 以及图案化所述第一电极材料以形成第二电容器(220,720,1320,1625)的顶部电极(221,721,1221,1621),以形成所述第一电容器的电极(212,712,1212,1612) 并且限定电阻器(230,730,1330)。
    • 8. 发明授权
    • Integrated passive device and method of fabrication
    • 集成无源器件及其制造方法
    • US07663196B2
    • 2010-02-16
    • US11673015
    • 2007-02-09
    • Lianjun LiuMelvy F. Miller
    • Lianjun LiuMelvy F. Miller
    • H01L27/14H01L29/82H01L29/84H01L29/00
    • B81C1/00253H01L28/10H01L28/60
    • A device 20 includes substrates 22 and 24 coupled to form a volume 32 between the substrates. A surface 28 of the substrate 22 faces a surface 30 of the substrate 24. A metal-insulator-metal capacitor 34 is formed on one of the surfaces 28 and 30. A conductive element 58 spans between a top electrode 56 of the capacitor 34 and the other surface 28 and 30. Vias 64 and 66 extend through the substrate 22 and are electrically interconnected with the conductive element 58 and a bottom electrode 52 of the capacitor 34. Another device 72 includes an underpass transmission line 92 formed on a surface 80 of a substrate 74 within a volume 84 formed between the substrate 74 and another substrate 76. The line 92 underlies an integrated device 96 formed on a surface 78 of the substrate 74.
    • 装置20包括联接以在基板之间形成体积32的基板22和24。 基板22的表面28面向基板24的表面30.金属 - 绝缘体 - 金属电容器34形成在一个表面28和30上。导电元件58跨越电容器34的顶部电极56和 另一个表面28和30.通道64和66延伸穿过基板22,并与导电元件58和电容器34的底部电极52电互连。另一个装置72包括形成在表面80上的地下通道传输线92 形成在衬底74和另一衬底76之间的体积84内的衬底74.线92位于形成在衬底74的表面78上的集成器件96的下面。
    • 9. 发明授权
    • Re-configurable impedance matching and harmonic filter system
    • 可重配置阻抗匹配和谐波滤波系统
    • US07567782B2
    • 2009-07-28
    • US11494821
    • 2006-07-28
    • Lianjun LiuMelvy F. Miller
    • Lianjun LiuMelvy F. Miller
    • H04B1/04
    • H04B1/0458H04B1/0067
    • Methods and apparatus are provided to enable a transceiver (200) or transmitter including a single PA line-up (210) to transmit signals having frequencies in two or more different frequency bands, and/or having two or more different modulation types, and/or having two or more different RF power levels. The single PA line-up includes at least one variable matching circuit (216) and a variable harmonic filter (240) to tune match and tune filter communication signals prior to transmission. The variable matching circuit and the variable harmonic filter each include at least one variable capacitive element (2160 and 2400) that switches ON/OFF depending on whether a low frequency signal or a high frequency signal is being transmitted. Each variable capacitive element includes separate direct current and radio frequency terminals to enable the single PA line-up to change signal modulation and/or RF power levels in addition to frequencies.
    • 提供了方法和装置,以使包括单个PA阵列(210)的收发机(200)或发射机能够发送具有两个或多个不同频带中的频率和/或具有两个或多个不同调制类型的频率,和/ 或具有两个或更多个不同的RF功率电平。 单个PA阵列包括至少一个可变匹配电路(216)和可变谐波滤波器(240),以在传输之前调谐匹配和调谐滤波器通信信号。 可变匹配电路和可变谐波滤波器各自包括至少一个可变电容元件(2160和2400),其根据是否正在发送低频信号或高频信号来接通/断开。 每个可变电容元件包括单独的直流电和射频终端,以使得单个PA阵列除频率之外还能改变信号调制和/或RF功率电平。