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    • 3. 发明授权
    • Member for removing foreign matter adhering to probe tip and method of manufacturing the probe tip, method of cleaning foreign matter adhering to probe tip, probe, and probing apparatus
    • 用于除去附着于探针尖端的异物的部件和制造探针尖端的方法,清洁附着在探针尖端的异物的方法,探针和探测装置
    • US06741086B2
    • 2004-05-25
    • US10126982
    • 2002-04-22
    • Shigeki MaekawaMegumi TakemotoYoshihiro Kashiba
    • Shigeki MaekawaMegumi TakemotoYoshihiro Kashiba
    • B08B100
    • B08B1/00G01R1/06738G01R3/00
    • The present invention provides a member for removing foreign matter adhering to the spherical tip portion of a test probe which is put into contact with the bonding pads of a semiconductor chip to test the action of the semiconductor chip. The member includes four essential layers of a base plate, a first elastic member on the base plate and flexibly deformable upon contact of the probe, specifically, a predetermined Young's modulus, a second elastic member on the first elastic member and having a tensile strength and a thickness responding to contact stress produced by the contact of the probe, and an abrasive layer on the second elastic member and made of hard particles and a binding material in a volume ratio providing a smooth sliding action of the probe and producing a high abrasive efficiency to any adhering foreign matter. The removing member can smoothly slide the probe to effectively remove the foreign matter adhering to the probe tip.
    • 本发明提供了一种用于去除与半导体芯片的接合焊盘接触的测试探针的球形尖端部分的异物的元件,以测试半导体芯片的作用。 所述构件包括基板的四个基本层,所述基板上的第一弹性构件,并且在所述探针接触时可挠曲,特别是预定的杨氏模量,所述第一弹性构件上的第二弹性构件, 响应于由探针接触产生的接触应力的厚度和第二弹性构件上的研磨层,由硬颗粒和结合材料制成的体积比提供了探针的平滑滑动作用并产生高的研磨效率 任何粘附的异物。 移除构件可以平滑地滑动探针,以有效地去除粘附到探针尖端的异物。
    • 4. 发明授权
    • Semiconductor device test probe
    • 半导体器件测试探头
    • US07274195B2
    • 2007-09-25
    • US10645595
    • 2003-08-22
    • Megumi TakemotoShigeki MaekawaYoshihiro KashibaYoshinori DeguchiKazunobu Miki
    • Megumi TakemotoShigeki MaekawaYoshihiro KashibaYoshinori DeguchiKazunobu Miki
    • G01R31/00
    • G01R1/06738G01R1/06711H01L2224/48463H01L2924/01037H01L2924/01057H01L2924/01079
    • A semiconductor device test probe having a tip portion for being urged against an electrode pad of an integrated semiconductor device to establish an electrical contact against the electrode pad for testing functions of the semiconductor device. The spherical tip portion has a radius of curvature r expressed by 9t≦r≦35t, where r is the radius of curvature of the spherical surface and t is the thickness of the electrode pad. The tip portion may have a first curved surface substantially positioned in the direction of slippage of the probe when the probe is urged against the electrode pad and slipped relative to the electrode pad and a second curved surface opposite to the first curved surface. The first curved surface has a radius of curvature of from 7 μm to 30 μm and larger than that of the second curved surface. The test probe may be manufactured by a method comprising the steps of roughing the tip portion of the curved surface by abrasing by means of electrolyte abrasion or abrasing particles to form a symmetrical spherical curved surface, and finishing the tip portion by sliding it on an abrasive member comprising an elastically deformable thick film fixed to a substrate and having abrasive particles therein or thereon directly or through a metallic film.
    • 一种半导体器件测试探针,其具有尖端部分,用于抵抗集成半导体器件的电极焊盘,以建立与电极焊盘的电接触,以测试半导体器件的功能。 球形尖端部分具有由9t <= r <= 35t表示的曲率半径r,其中r是球面的曲率半径,t是电极焊盘的厚度。 尖端部分可以具有基本上位于探头滑动方向上的第一弯曲表面,当探头被推靠在电极垫上并相对于电极焊盘滑动时,第一弯曲表面与第一弯曲表面相对的第二弯曲表面。 第一曲面的曲率半径为7μm〜30μm,大于第二曲面的曲率半径。 测试探针可以通过以下方法制造,该方法包括以下步骤:通过利用电解质磨损或磨损颗粒进行磨损来粗糙化弯曲表面的尖端部分以形成对称的球形曲面,并且通过将其磨削在磨料上来完成尖端部分 其包括固定到基底的可弹性变形的厚膜,其上直接或通过金属膜在其中或其上具有磨料颗粒。
    • 5. 发明申请
    • Semiconductor device test probe
    • 半导体器件测试探头
    • US20060038575A1
    • 2006-02-23
    • US11206167
    • 2005-08-18
    • Megumi TakemotoShigeki MaekawaYoshihiro KashibaYoshinori DeguchiKazunobu Miri
    • Megumi TakemotoShigeki MaekawaYoshihiro KashibaYoshinori DeguchiKazunobu Miri
    • G01R31/02
    • G01R1/06738G01R1/06711H01L2224/48463H01L2924/01037H01L2924/01057H01L2924/01079
    • A semiconductor device test probe having a tip portion for being urged against an electrode pad of an integrated semiconductor device to establish an electrical contact against the electrode pad for testing functions of the semiconductor device. The spherical tip portion has a radius of curvature r expressed by 9t≦r≦35t where r is the radius of curvature of the spherical surface and t is the thickness of the electrode pad. The tip portion may have a first curved surface substantially positioned in the direction of slippage of the probe when the probe is urged against the electrode pad and slipped relative to the electrode pad and a second curved surface opposite to the first curved surface. The first curved surface has a radius of curvature of from 7 μm to 30 μm and larger than that of the second curved surface. The test probe may be manufactured by a method comprising the steps of roughing the tip portion of the curved surface by abrasing by means of electrolyte abrasion or abrasing particles to form a symmetrical spherical curved surface, and finishing the tip portion by sliding it on an abrasive member comprising an elastically deformable thick film fixed to a substrate and having abrasive particles therein or thereon directly or through a metallic film.
    • 一种半导体器件测试探针,其具有尖端部分,用于抵抗集成半导体器件的电极焊盘,以建立与电极焊盘的电接触,以测试半导体器件的功能。 球形尖端部分具有由9t <= r <= 35t表示的曲率半径r,其中r是球面的曲率半径,t是电极焊盘的厚度。 尖端部分可以具有基本上位于探头滑动方向上的第一弯曲表面,当探头被推靠在电极垫上并相对于电极焊盘滑动时,第一弯曲表面与第一弯曲表面相对的第二弯曲表面。 第一曲面的曲率半径为7μm〜30μm,大于第二曲面的曲率半径。 测试探针可以通过以下方法制造,该方法包括以下步骤:通过利用电解质磨损或磨损颗粒进行磨损来粗糙化弯曲表面的尖端部分以形成对称的球形曲面,并且通过将其磨削在磨料上来完成尖端部分 其包括固定到基底的可弹性变形的厚膜,其上直接或通过金属膜在其中或其上具有磨料颗粒。
    • 6. 发明授权
    • Semiconductor device test probe having improved tip portion and manufacturing method thereof
    • 具有改进的尖端部分的半导体器件测试探针及其制造方法
    • US06633176B2
    • 2003-10-14
    • US09810247
    • 2001-03-19
    • Megumi TakemotoShigeki MaekawaYoshihiro KashibaYoshinori DeguchiKazunobu Miki
    • Megumi TakemotoShigeki MaekawaYoshihiro KashibaYoshinori DeguchiKazunobu Miki
    • G01R3100
    • G01R1/06738G01R1/06711H01L2224/48463H01L2924/01037H01L2924/01057H01L2924/01079
    • A semiconductor device test probe having a tip portion for being urged against an electrode pad of an integrated semiconductor device to establish an electrical contact against the electrode pad for testing functions of the semiconductor device. The spherical tip portion has a radius of curvature r expressed by 8t≦r≦23t, where r is the radius of curvature of the spherical surface and t is the thickness of the electrode pad. The tip portion may have a first curved surface substantially positioned in the direction of slippage of the probe when the probe is urged against the electrode pad and slipped relative to the electrode pad and a second curved surface opposite to the first curved surface. The first curved surface has a radius of curvature of from 7 &mgr;m to 30 &mgr;m and larger than that of the second curved surface. The test probe may be manufactured by a method comprising the steps of roughing the tip portion of the curved surface by abrasing by means of electrolyte abrasion or abrasing particles to form a symmetrical spherical curved surface, and finishing the tip portion by sliding it on an abrasive member comprising an elastically deformable thick film fixed to a substrate and having abrasive particles therein or thereon directly or through a metallic film.
    • 一种半导体器件测试探针,其具有尖端部分,用于抵抗集成半导体器件的电极焊盘,以建立与电极焊盘的电接触,以测试半导体器件的功能。 球形尖端部分具有由8t <= r <= 23t表示的曲率半径r,其中r是球面的曲率半径,t是电极焊盘的厚度。 尖端部分可以具有基本上位于探头滑动方向上的第一弯曲表面,当探头被推靠在电极垫上并相对于电极焊盘滑动时,第一弯曲表面与第一弯曲表面相对的第二弯曲表面。 第一曲面的曲率半径为7μm〜30μm,大于第二曲面的曲率半径。 测试探针可以通过以下方法制造,该方法包括以下步骤:通过利用电解质磨损或磨损颗粒进行磨损来粗糙化弯曲表面的尖端部分以形成对称的球形曲面,并且通过将其磨削在磨料上来完成尖端部分 其包括固定到基底上的可弹性变形的厚膜,其中直接或通过金属膜在其中或通过金属膜上具有研磨颗粒。
    • 7. 发明申请
    • SEMICONDUCTOR DEVICE TEST PROBE HAVING IMPROVED TIP PORTION
    • 具有改进提示部分的半导体器件测试探针
    • US20050189955A1
    • 2005-09-01
    • US10645595
    • 2003-08-22
    • Megumi TakemotoShigeki MaekawaYoshihiro KashibaYoshinori DeguchiKazunobu Miki
    • Megumi TakemotoShigeki MaekawaYoshihiro KashibaYoshinori DeguchiKazunobu Miki
    • G01R1/067H01L21/66G01R31/02
    • G01R1/06738G01R1/06711H01L2224/48463H01L2924/01037H01L2924/01057H01L2924/01079
    • A semiconductor device test probe having a tip portion for being urged against an electrode pad of an integrated semiconductor device to establish an electrical contact against the electrode pad for testing functions of the semiconductor device. The spherical tip portion has a radius of curvature r expressed by 9t≦r≦35t, where r is the radius of curvature of the spherical surface and t is the thickness of the electrode pad. The tip portion may have a first curved surface substantially positioned in the direction of slippage of the probe when the probe is urged against the electrode pad and slipped relative to the electrode pad and a second curved surface opposite to the first curved surface. The first curved surface has a radius of curvature of from 7 μm to 30 μm and larger than that of the second curved surface. The test probe may be manufactured by a method comprising the steps of roughing the tip portion of the curved surface by abrasing by means of electrolyte abrasion or abrasing particles to form a symmetrical spherical curved surface, and finishing the tip portion by sliding it on an abrasive member comprising an elastically deformable thick film fixed to a substrate and having abrasive particles therein or thereon directly or through a metallic film.
    • 一种半导体器件测试探针,其具有尖端部分,用于抵抗集成半导体器件的电极焊盘,以建立与电极焊盘的电接触,以测试半导体器件的功能。 球形尖端部分具有由9t <= r <= 35t表示的曲率半径r,其中r是球面的曲率半径,t是电极焊盘的厚度。 尖端部分可以具有基本上位于探头滑动方向上的第一弯曲表面,当探头被推靠在电极垫上并相对于电极焊盘滑动时,第一弯曲表面与第一弯曲表面相对的第二弯曲表面。 第一曲面的曲率半径为7μm〜30μm,大于第二曲面的曲率半径。 测试探针可以通过以下方法制造,该方法包括以下步骤:通过利用电解质磨损或磨损颗粒进行磨损来粗糙化弯曲表面的尖端部分以形成对称的球形曲面,并且通过将其磨削在磨料上来完成尖端部分 其包括固定到基底的可弹性变形的厚膜,其上直接或通过金属膜在其中或其上具有磨料颗粒。
    • 8. 发明授权
    • Test probe for semiconductor devices, method of manufacturing of the same, and member for removing foreign matter
    • 用于半导体器件的测试探针,其制造方法和用于除去异物的部件
    • US06646455B2
    • 2003-11-11
    • US09121870
    • 1998-07-24
    • Shigeki MaekawaMegumi TakemotoKazunobu MikiMutsumi KanoTakahiro NagataYoshihiro Kashiba
    • Shigeki MaekawaMegumi TakemotoKazunobu MikiMutsumi KanoTakahiro NagataYoshihiro Kashiba
    • B08B100
    • G01R1/06738G01R1/06755G01R3/00
    • A test probe for semiconductor devices, the test probe having a tip portion which is pressed against a test pad of a semiconductor device to establish electrical contact between the tip portion and the pad for testing the operation of the semiconductor device, wherein the probe is formed to have a tip shape with an angle of not less than 15 degrees formed at the surface of the pad between a tangential line with respect to a tip face of the probe and the pad surface when the probe is pressed against the pad, the tip shape of the probe having a spherical surface meeting the relationship of: &thgr;=cos−1(1−t/R)≧15° where the radius of curvature of the spherical surface is R, the thickness of the pad is t, and the angle formed at the pad surface between the tangential line with respect to the probe tip face and the pad surface when the probe is pressed against the pad is &thgr;, the probe have a flat portion at an end of the tip portion. Accordingly, a contact surface can be established between the probe trip and the pad with a sufficient degree of electrical continuity, and when the the probe level is adjusted in the probing, a time required for positioning the probe prior to the start of measurement is cut down and variation in measurement are reduced.
    • 一种用于半导体器件的测试探针,所述测试探针具有被压靠在半导体器件的测试焊盘上的尖端部分,以建立所述尖端部分和所述焊盘之间的电接触,以测试所述半导体器件的操作,其中形成所述探针 在探针被压靠在衬垫上时,具有相对于探针的尖端面的切线与衬垫表面之间形成有不小于15度的角度的尖端形状, 所述探针具有满足以下关系的球面的球面:其中球面的曲率半径为R,垫的厚度为t,并且在相对于探针尖端的切线之间形成在垫表面处的角度 当探针被压靠在垫上时,表面和垫表面是θ,探针在尖端部分的端部具有平坦部分。 因此,可以在探针跳闸和焊盘之间建立足够的电连续性的接触表面,并且当在探测中调整探针电平时,切割在测量开始之前定位探针所需的时间被切断 降低了测量的变化。
    • 10. 发明授权
    • Semiconductor device test probe
    • 半导体器件测试探头
    • US07276923B2
    • 2007-10-02
    • US11206167
    • 2005-08-18
    • Megumi TakemotoShigeki MaekawaYoshihiro KashibaYoshinori DeguchiKazunobu Miki
    • Megumi TakemotoShigeki MaekawaYoshihiro KashibaYoshinori DeguchiKazunobu Miki
    • G01R31/00
    • G01R1/06738G01R1/06711H01L2224/48463H01L2924/01037H01L2924/01057H01L2924/01079
    • A semiconductor device test probe having a tip portion for being urged against an electrode pad of an integrated semiconductor device to establish an electrical contact against the electrode pad for testing functions of the semiconductor device. The spherical tip portion has a radius of curvature r expressed by 9t≦r≦35t where r is the radius of curvature of the spherical surface and t is the thickness of the electrode pad. The tip portion may have a first curved surface substantially positioned in the direction of slippage of the probe when the probe is urged against the electrode pad and slipped relative to the electrode pad and a second curved surface opposite to the first curved surface. The first curved surface has a radius of curvature of from 7 μm to 30 μm and larger than that of the second curved surface. The test probe may be manufactured by a method comprising the steps of roughing the tip portion of the curved surface by abrasing by means of electrolyte abrasion or abrasing particles to form a symmetrical spherical curved surface, and finishing the tip portion by sliding it on an abrasive member comprising an elastically deformable thick film fixed to a substrate and having abrasive particles therein or thereon directly or through a metallic film.
    • 一种半导体器件测试探针,其具有尖端部分,用于抵抗集成半导体器件的电极焊盘,以建立与电极焊盘的电接触,以测试半导体器件的功能。 球形尖端部分具有由9t <= r <= 35t表示的曲率半径r,其中r是球面的曲率半径,t是电极焊盘的厚度。 尖端部分可以具有基本上位于探头滑动方向上的第一弯曲表面,当探头被推靠在电极垫上并相对于电极焊盘滑动时,第一弯曲表面与第一弯曲表面相对的第二弯曲表面。 第一曲面的曲率半径为7μm〜30μm,大于第二曲面的曲率半径。 测试探针可以通过以下方法制造,该方法包括以下步骤:通过利用电解质磨损或磨损颗粒进行磨损来粗糙化弯曲表面的尖端部分以形成对称的球形曲面,并且通过将其磨削在磨料上来完成尖端部分 其包括固定到基底的可弹性变形的厚膜,其上直接或通过金属膜在其中或其上具有磨料颗粒。