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1. 发明申请

US20110274234A1 SHIFT REGISTER 审中-公开
标题翻译：移位寄存器
公开(公告)号：US20110274234A1
公开(公告)日：2011-11-10
申请号：US12998686
申请日：2009-11-19
申请人： Mayuko Sakamoto , Masao Moriguchi , Yasuaki Iwase , Yuhichi Saitoh , Tokuo Yoshida , Yohsuke Kanzaki
发明人： Mayuko Sakamoto , Masao Moriguchi , Yasuaki Iwase , Yuhichi Saitoh , Tokuo Yoshida , Yohsuke Kanzaki
IPC分类号： G11C19/00
CPC分类号： H01L29/78696 , G09G3/20 , G09G2310/0267 , G09G2310/0286 , G11C19/184 , H01L27/12 , H01L29/04 , H01L29/41733 , H01L29/78618
摘要： A shift register of at least one embodiment of the present invention is a shift register supported by an insulative substrate, wherein: the shift register includes a plurality of stages each sequentially outputting output signals; each of the plurality of stages includes a first transistor for outputting the output signals, and a plurality of second transistors whose source region or drain region is electrically connected to a gate electrode of the first transistor; and the plurality of second transistors include a multi-channel transistor having an active layer including at least two channel regions, a source region and a drain region. This improves characteristics of a shift register forming a monolithic gate driver.
摘要翻译：本发明的至少一个实施例的移位寄存器是由绝缘衬底支持的移位寄存器，其中：移位寄存器包括顺序地输出输出信号的多个级; 多个级中的每一个包括用于输出输出信号的第一晶体管和源极区或漏极区电连接到第一晶体管的栅电极的多个第二晶体管; 并且所述多个第二晶体管包括具有包括至少两个沟道区的有源层，源极区和漏极区的多沟道晶体管。这改善了形成单片栅极驱动器的移位寄存器的特性。

2. 发明授权

US08575615B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08575615B2
公开(公告)日：2013-11-05
申请号：US13119210
申请日：2009-09-01
申请人： Yuichi Saito , Masao Moriguchi , Tokuo Yoshida , Yasuaki Iwase , Yohsuke Kanzaki , Mayuko Sakamoto
发明人： Yuichi Saito , Masao Moriguchi , Tokuo Yoshida , Yasuaki Iwase , Yohsuke Kanzaki , Mayuko Sakamoto
IPC分类号： H01L31/00 , H01L29/10 , H01L29/04 , H01L31/036
CPC分类号： H01L27/12 , G02F1/136204 , H01L27/1225
摘要： A diode 201 includes a gate electrode 2, a gate insulating layer 5 provided on the gate electrode 2, at least one semiconductor layer 6, 7 provided on the gate insulating layer 5 and which includes a first region 6a and a second region 7b, a first electrode 10 which is provided on the first region 6a and which is electrically coupled to the first region 6a and the gate electrode 2, and a second electrode 12 which is provided on the second region 7b and which is electrically coupled to the second region 7b. The at least one semiconductor layer 6, 7 includes a channel region 6c which extends above the gate electrode 2 with the intervention of the gate insulating layer 5 therebetween, and a resistor region 7d which does not extend above the gate electrode 2. When the diode 201 is in an ON state, an electric current path is formed between the first electrode 10 and the second electrode 12, the electric current path including the channel region 6c and the resistor region 7d.
摘要翻译：二极管201包括栅极电极2，设置在栅极电极2上的栅极绝缘层5，设置在栅极绝缘层5上的至少一个半导体层6,7，其包括第一区域6a和第二区域7b，第一电极10设置在第一区域6a上并且电耦合到第一区域6a和栅极电极2;以及第二电极12，其设置在第二区域7b上并且电耦合到第二区域7b 。至少一个半导体层6,7包括在栅极电极2上方延伸的沟道区域6c，其中介于其间的栅极绝缘层5以及不在栅极电极2上方延伸的电阻器区域7d。当二极管 201处于导通状态，在第一电极10和第二电极12之间形成电流路径，电流路径包括沟道区6c和电阻区7d。

3. 发明申请

US20110169005A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110169005A1
公开(公告)日：2011-07-14
申请号：US13119210
申请日：2009-09-01
申请人： Yuichi Saito , Masao Moriguchi , Tokuo Yoshida , Yasuaki Iwase , Yohsuke Kanzaki , Mayuko Sakamoto
发明人： Yuichi Saito , Masao Moriguchi , Tokuo Yoshida , Yasuaki Iwase , Yohsuke Kanzaki , Mayuko Sakamoto
IPC分类号： H01L29/04
CPC分类号： H01L27/12 , G02F1/136204 , H01L27/1225
摘要： A diode 201 includes a gate electrode 2, a gate insulating layer 5 provided on the gate electrode 2, at least one semiconductor layer 6, 7 provided on the gate insulating layer 5 and which includes a first region 6a and a second region 7b, a first electrode 10 which is provided on the first region 6a and which is electrically coupled to the first region 6a and the gate electrode 2, and a second electrode 12 which is provided on the second region 7b and which is electrically coupled to the second region 7b. The at least one semiconductor layer 6, 7 includes a channel region 6c which extends above the gate electrode 2 with the intervention of the gate insulating layer 5 therebetween, and a resistor region 7d which does not extend above the gate electrode 2. When the diode 201 is in an ON state, an electric current path is formed between the first electrode 10 and the second electrode 12, the electric current path including the channel region 6c and the resistor region 7d.
摘要翻译：二极管201包括栅极电极2，设置在栅极电极2上的栅极绝缘层5，设置在栅极绝缘层5上的至少一个半导体层6,7，其包括第一区域6a和第二区域7b，第一电极10设置在第一区域6a上并且电耦合到第一区域6a和栅极电极2;以及第二电极12，其设置在第二区域7b上并且电耦合到第二区域7b 。至少一个半导体层6,7包括在栅极电极2上方延伸的沟道区域6c，其中介于其间的栅极绝缘层5以及不在栅极电极2上方延伸的电阻器区域7d。当二极管 201处于导通状态，在第一电极10和第二电极12之间形成电流路径，电流路径包括沟道区6c和电阻区7d。

4. 发明申请

US20120224118A1 LIQUID CRYSTAL DISPLAY DEVICE 审中-公开
标题翻译：液晶显示装置
公开(公告)号：US20120224118A1
公开(公告)日：2012-09-06
申请号：US13509369
申请日：2010-06-18
申请人： Yohsuke Kanzaki , Yuhichi Saitoh
发明人： Yohsuke Kanzaki , Yuhichi Saitoh
IPC分类号： G02F1/1337 , G02F1/1339
CPC分类号： G02F1/133711 , G02F1/13458
摘要： On the surface of a first substrate on the side of a liquid crystal layer, an alignment film formed by curing a resin material having fluidity is provided so as to expand from a pixel region to a part of a terminal region through a connection region. At least between mounting terminals and the pixel region, a restriction structure portion for restricting the flow of the resin material that has not cured yet is formed. Each of the plurality of mounting terminals exposed to outside from the alignment film.
摘要翻译：在液晶层侧的第一基板的表面上，通过固化具有流动性的树脂材料形成的取向膜，通过连接区域从像素区域扩展到端子区域的一部分。至少在安装端子和像素区域之间，形成用于限制尚未固化的树脂材料的流动的限制结构部分。多个安装端子中的每一个暴露于取向膜的外部。

5. 发明授权

US08623681B2 Thin film transistor substrate, method for manufacturing the same, and liquid crystal display panel 有权
标题翻译：薄膜晶体管基板，其制造方法和液晶显示面板
公开(公告)号：US08623681B2
公开(公告)日：2014-01-07
申请号：US13808375
申请日：2011-07-01
申请人： Yoshiki Nakatani , Yuhichi Saitoh , Tetsuya Okamoto , Yohsuke Kanzaki , Yudai Takanishi
发明人： Yoshiki Nakatani , Yuhichi Saitoh , Tetsuya Okamoto , Yohsuke Kanzaki , Yudai Takanishi
IPC分类号： H01L21/00
CPC分类号： H01L27/1255 , G02F1/136213 , G02F1/13624 , G02F1/1368 , G02F2001/133397 , G02F2001/13606 , G02F2001/136236 , H01L27/1225 , H01L27/1259 , H01L27/1288
摘要： An auxiliary capacitor (6a) includes a capacitor line (11ba), a gate insulating film (12) provided so as to cover the capacitor line (11ba), a semiconductor layer (13b) provided on the gate insulating film (12) so as to overlap with the capacitor line (11b), and a drain electrode (14ba) provided on the semiconductor layer (13b) and connected to a pixel electrode (16a). The semiconductor layer (13b) made of an oxide semiconductor and the pixel electrode (16a) made of an oxide conductor contact each other.
摘要翻译：辅助电容器（6a）包括电容器线（11ba），设置为覆盖电容器线（11ba）的栅极绝缘膜（12），设置在栅极绝缘膜（12）上的半导体层（13b）与电容器线（11b）重叠，以及设置在半导体层（13b）上并连接到像素电极（16a）的漏电极（14ba）。由氧化物半导体构成的半导体层（13b）和由氧化物导体构成的像素电极（16a）彼此接触。

6. 发明申请

US20140028944A1 THIN FILM TRANSISTOR SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, AND LIQUID CRYSTAL DISPLAY PANEL 有权
标题翻译：薄膜晶体管基板，其制造方法和液晶显示面板
公开(公告)号：US20140028944A1
公开(公告)日：2014-01-30
申请号：US13813839
申请日：2011-07-28
申请人： Yohsuke Kanzaki , Yuhichi Saitoh , Yoshiki Nakatani , Tetsuya Okamoto , Yudai Takanishi
发明人： Yohsuke Kanzaki , Yuhichi Saitoh , Yoshiki Nakatani , Tetsuya Okamoto , Yudai Takanishi
IPC分类号： H01L29/786 , G02F1/1368 , H01L29/66
CPC分类号： H01L29/7869 , G02F1/1368 , H01L27/1225 , H01L27/1255 , H01L27/1288 , H01L29/66742 , H01L29/66969
摘要： A TFT substrate (20a) includes a plurality of pixel electrodes (17a) provided in a matrix, a plurality of TFTs (5) each provided for a corresponding one of the pixel electrodes (17a), and a plurality of auxiliary capacitors (6a) each provided for a corresponding one of the pixel electrodes (17a). Each of the auxiliary capacitors (6a) includes a capacitor line (11b) made of a material identical to that of the gate electrode (11aa) of the TFT (5) and provided in a layer identical to that of the gate electrode (11aa) of the TFT (5), the gate insulating film (12) provided so as to cover the capacitor line (11b), and a corresponding one of the pixel electrodes (17a) provided on the gate insulating film (12) so as to overlap with the capacitor line (11b) and being in conduction with a drain electrode (14ca).
摘要翻译： TFT基板（20a）包括以矩阵形式设置的多个像素电极（17a），分别设置在相应的像素电极（17a）中的多个TFT（5）和多个辅助电容器（6a）每个设置用于相应的一个像素电极（17a）。每个辅助电容器（6a）包括由与TFT（5）的栅电极（11aa）相同的材料制成并且设置在与栅电极（11aa）相同的层中的电容器线（11b）设置为覆盖电容线（11b）的TFT（5），栅极绝缘膜（12）和设置在栅极绝缘膜（12）上的相应的像素电极（17a）重叠与电容器线（11b）并且与漏电极（14ca）导通。

7. 发明申请

US20130214272A1 THIN FILM TRANSISTOR SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, AND LIQUID CRYSTAL DISPLAY PANEL 有权
标题翻译：薄膜晶体管基板，其制造方法和液晶显示面板
公开(公告)号：US20130214272A1
公开(公告)日：2013-08-22
申请号：US13808375
申请日：2011-07-01
申请人： Yoshiki Nakatani , Yuhichi Saitoh , Tetsuya Okamoto , Yohsuke Kanzaki , Yudai Takanishi
发明人： Yoshiki Nakatani , Yuhichi Saitoh , Tetsuya Okamoto , Yohsuke Kanzaki , Yudai Takanishi
IPC分类号： H01L27/12
CPC分类号： H01L27/1255 , G02F1/136213 , G02F1/13624 , G02F1/1368 , G02F2001/133397 , G02F2001/13606 , G02F2001/136236 , H01L27/1225 , H01L27/1259 , H01L27/1288
摘要： An auxiliary capacitor (6a) includes a capacitor line (11ba), a gate insulating film (12) provided so as to cover the capacitor line (11ba), a semiconductor layer (13b) provided on the gate insulating film (12) so as to overlap with the capacitor line (11b), and a drain electrode (14ba) provided on the semiconductor layer (13b) and connected to a pixel electrode (16a). The semiconductor layer (13b) made of an oxide semiconductor and the pixel electrode (16a) made of an oxide conductor contact each other.
摘要翻译：辅助电容器（6a）包括电容器线（11ba），设置为覆盖电容器线（11ba）的栅极绝缘膜（12），设置在栅极绝缘膜（12）上的半导体层（13b）与电容器线（11b）重叠，以及设置在半导体层（13b）上并连接到像素电极（16a）的漏电极（14ba）。由氧化物半导体构成的半导体层（13b）和由氧化物导体构成的像素电极（16a）彼此接触。

8. 发明申请

US20130208207A1 DISPLAY DEVICE SUBSTRATE, METHOD FOR PRODUCING THE SAME, AND DISPLAY DEVICE 审中-公开
标题翻译：显示装置基板，其制造方法和显示装置
公开(公告)号：US20130208207A1
公开(公告)日：2013-08-15
申请号：US13806235
申请日：2011-05-24
申请人： Tetsuya Okamoto , Yoshiki Nakatani , Yudai Takanishi , Yohsuke Kanzaki , Yuhichi Saitoh
发明人： Tetsuya Okamoto , Yoshiki Nakatani , Yudai Takanishi , Yohsuke Kanzaki , Yuhichi Saitoh
IPC分类号： H01L29/04 , G02F1/1368
CPC分类号： H01L29/04 , G02F1/13458 , G02F1/1368 , H01L27/1225 , H01L27/124 , H01L29/7869
摘要： An active matrix substrate (20) includes: a gate electrode (11) provided on an insulating substrate (10a); a gate insulating layer (12) covering the gate electrode (11); an oxide semiconductor layer (13) provided on the gate insulating layer (12); and a protective layer (17) covering the oxide semiconductor layer (13). The active matrix substrate (20) has a display region (D) where an image is displayed and a gate terminal region (Ts) located around the display region (D) and including a gate terminal (26) for connection to an external circuit. The gate terminal (26) includes a terminal line (21) provided on the insulating substrate (10a). The terminal line (26) is made of a conductive material different from a material constituting the oxide semiconductor layer (13).
摘要翻译：有源矩阵基板（20）包括：设置在绝缘基板（10a）上的栅电极（11）; 覆盖所述栅电极的栅极绝缘层（12）; 设置在栅绝缘层（12）上的氧化物半导体层（13）; 和覆盖氧化物半导体层（13）的保护层（17）。有源矩阵基板（20）具有显示图像的显示区域（D）和位于显示区域（D）周围的栅极端子区域（Ts），并且包括用于连接到外部电路的栅极端子（26）。栅极端子（26）包括设置在绝缘基板（10a）上的端子线（21）。端子线（26）由与构成氧化物半导体层（13）的材料不同的导电材料制成。

9. 发明授权

US09196742B2 Thin film transistor substrate, method for manufacturing the same, and liquid crystal display panel 有权
标题翻译：薄膜晶体管基板，其制造方法和液晶显示面板
公开(公告)号：US09196742B2
公开(公告)日：2015-11-24
申请号：US13813839
申请日：2011-07-28
申请人： Yohsuke Kanzaki , Yuhichi Saitoh , Yoshiki Nakatani , Tetsuya Okamoto , Yudai Takanishi
发明人： Yohsuke Kanzaki , Yuhichi Saitoh , Yoshiki Nakatani , Tetsuya Okamoto , Yudai Takanishi
IPC分类号： H01L29/786 , G02F1/1368 , H01L27/12 , H01L29/66
CPC分类号： H01L29/7869 , G02F1/1368 , H01L27/1225 , H01L27/1255 , H01L27/1288 , H01L29/66742 , H01L29/66969
摘要： A TFT substrate (20a) includes a plurality of pixel electrodes (17a) provided in a matrix, a plurality of TFTs (5) each provided for a corresponding one of the pixel electrodes (17a), and a plurality of auxiliary capacitors (6a) each provided for a corresponding one of the pixel electrodes (17a). Each of the auxiliary capacitors (6a) includes a capacitor line (11b) made of a material identical to that of the gate electrode (11aa) of the TFT (5) and provided in a layer identical to that of the gate electrode (11aa) of the TFT (5), the gate insulating film (12) provided so as to cover the capacitor line (11b), and a corresponding one of the pixel electrodes (17a) provided on the gate insulating film (12) so as to overlap with the capacitor line (11b) and being in conduction with a drain electrode (14ca).
摘要翻译： TFT基板（20a）包括以矩阵形式设置的多个像素电极（17a），分别设置在相应的像素电极（17a）中的多个TFT（5）和多个辅助电容器（6a）每个设置用于相应的一个像素电极（17a）。每个辅助电容器（6a）包括由与TFT（5）的栅电极（11aa）相同的材料制成并且设置在与栅电极（11aa）相同的层中的电容器线（11b）设置为覆盖电容线（11b）的TFT（5），栅极绝缘膜（12）和设置在栅极绝缘膜（12）上的相应的像素电极（17a）重叠与电容器线（11b）并且与漏电极（14ca）导通。

10. 发明申请

US20130215370A1 DISPLAY DEVICE SUBSTRATE, METHOD FOR PRODUCING THE SAME, AND DISPLAY DEVICE 审中-公开
标题翻译：显示装置基板，其制造方法和显示装置
公开(公告)号：US20130215370A1
公开(公告)日：2013-08-22
申请号：US13817246
申请日：2011-05-11
申请人： Yudai Takanishi , Yohsuke Kanzaki , Tetsuya Okamoto , Yuhichi Saitoh , Yoshiki Nakatani
发明人： Yudai Takanishi , Yohsuke Kanzaki , Tetsuya Okamoto , Yuhichi Saitoh , Yoshiki Nakatani
IPC分类号： G02F1/1362 , H01L33/00
CPC分类号： G02F1/136227 , G02F1/13458 , H01L27/1225 , H01L27/124 , H01L27/1288 , H01L29/45 , H01L29/7869 , H01L33/0041
摘要： A thin film transistor substrate (20) includes: an insulating substrate (10a); a gate insulating layer (12) provided on the insulating substrate (10a); a connection layer (25) provided on the gate insulating layer (12), and made of indium gallium zinc oxide (IGZO); a drain electrode (16b) provided on the connection layer (25), and made of titanium; a contact hole (Ca) formed in the connection layer (25) and the drain electrode (16b); and a pixel electrode (19a) provided on a surface of the contact hole (Ca), and contacting the connection layer (25). The drain electrode (16b) and the pixel electrode (19a) are electrically connected together through the connection layer (25).
摘要翻译：薄膜晶体管基板（20）包括：绝缘基板（10a）; 设置在绝缘基板（10a）上的栅绝缘层（12）; 设置在所述栅极绝缘层（12）上并由铟镓锌氧化物（IGZO）制成的连接层（25）; 设置在所述连接层（25）上并由钛制成的漏电极（16b）形成在连接层（25）和漏电极（16b）中的接触孔（Ca）; 以及设置在所述接触孔（Ca）的表面上并与所述连接层（25）接触的像素电极（19a）。漏极电极（16b）和像素电极（19a）通过连接层（25）电连接在一起。

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