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1. 发明授权

US08575615B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08575615B2
公开(公告)日：2013-11-05
申请号：US13119210
申请日：2009-09-01
申请人： Yuichi Saito , Masao Moriguchi , Tokuo Yoshida , Yasuaki Iwase , Yohsuke Kanzaki , Mayuko Sakamoto
发明人： Yuichi Saito , Masao Moriguchi , Tokuo Yoshida , Yasuaki Iwase , Yohsuke Kanzaki , Mayuko Sakamoto
IPC分类号： H01L31/00 , H01L29/10 , H01L29/04 , H01L31/036
CPC分类号： H01L27/12 , G02F1/136204 , H01L27/1225
摘要： A diode 201 includes a gate electrode 2, a gate insulating layer 5 provided on the gate electrode 2, at least one semiconductor layer 6, 7 provided on the gate insulating layer 5 and which includes a first region 6a and a second region 7b, a first electrode 10 which is provided on the first region 6a and which is electrically coupled to the first region 6a and the gate electrode 2, and a second electrode 12 which is provided on the second region 7b and which is electrically coupled to the second region 7b. The at least one semiconductor layer 6, 7 includes a channel region 6c which extends above the gate electrode 2 with the intervention of the gate insulating layer 5 therebetween, and a resistor region 7d which does not extend above the gate electrode 2. When the diode 201 is in an ON state, an electric current path is formed between the first electrode 10 and the second electrode 12, the electric current path including the channel region 6c and the resistor region 7d.
摘要翻译：二极管201包括栅极电极2，设置在栅极电极2上的栅极绝缘层5，设置在栅极绝缘层5上的至少一个半导体层6,7，其包括第一区域6a和第二区域7b，第一电极10设置在第一区域6a上并且电耦合到第一区域6a和栅极电极2;以及第二电极12，其设置在第二区域7b上并且电耦合到第二区域7b 。至少一个半导体层6,7包括在栅极电极2上方延伸的沟道区域6c，其中介于其间的栅极绝缘层5以及不在栅极电极2上方延伸的电阻器区域7d。当二极管 201处于导通状态，在第一电极10和第二电极12之间形成电流路径，电流路径包括沟道区6c和电阻区7d。

2. 发明申请

US20110169005A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110169005A1
公开(公告)日：2011-07-14
申请号：US13119210
申请日：2009-09-01
申请人： Yuichi Saito , Masao Moriguchi , Tokuo Yoshida , Yasuaki Iwase , Yohsuke Kanzaki , Mayuko Sakamoto
发明人： Yuichi Saito , Masao Moriguchi , Tokuo Yoshida , Yasuaki Iwase , Yohsuke Kanzaki , Mayuko Sakamoto
IPC分类号： H01L29/04
CPC分类号： H01L27/12 , G02F1/136204 , H01L27/1225
摘要： A diode 201 includes a gate electrode 2, a gate insulating layer 5 provided on the gate electrode 2, at least one semiconductor layer 6, 7 provided on the gate insulating layer 5 and which includes a first region 6a and a second region 7b, a first electrode 10 which is provided on the first region 6a and which is electrically coupled to the first region 6a and the gate electrode 2, and a second electrode 12 which is provided on the second region 7b and which is electrically coupled to the second region 7b. The at least one semiconductor layer 6, 7 includes a channel region 6c which extends above the gate electrode 2 with the intervention of the gate insulating layer 5 therebetween, and a resistor region 7d which does not extend above the gate electrode 2. When the diode 201 is in an ON state, an electric current path is formed between the first electrode 10 and the second electrode 12, the electric current path including the channel region 6c and the resistor region 7d.
摘要翻译：二极管201包括栅极电极2，设置在栅极电极2上的栅极绝缘层5，设置在栅极绝缘层5上的至少一个半导体层6,7，其包括第一区域6a和第二区域7b，第一电极10设置在第一区域6a上并且电耦合到第一区域6a和栅极电极2;以及第二电极12，其设置在第二区域7b上并且电耦合到第二区域7b 。至少一个半导体层6,7包括在栅极电极2上方延伸的沟道区域6c，其中介于其间的栅极绝缘层5以及不在栅极电极2上方延伸的电阻器区域7d。当二极管 201处于导通状态，在第一电极10和第二电极12之间形成电流路径，电流路径包括沟道区6c和电阻区7d。

3. 发明申请

US20110274234A1 SHIFT REGISTER 审中-公开
标题翻译：移位寄存器
公开(公告)号：US20110274234A1
公开(公告)日：2011-11-10
申请号：US12998686
申请日：2009-11-19
申请人： Mayuko Sakamoto , Masao Moriguchi , Yasuaki Iwase , Yuhichi Saitoh , Tokuo Yoshida , Yohsuke Kanzaki
发明人： Mayuko Sakamoto , Masao Moriguchi , Yasuaki Iwase , Yuhichi Saitoh , Tokuo Yoshida , Yohsuke Kanzaki
IPC分类号： G11C19/00
CPC分类号： H01L29/78696 , G09G3/20 , G09G2310/0267 , G09G2310/0286 , G11C19/184 , H01L27/12 , H01L29/04 , H01L29/41733 , H01L29/78618
摘要： A shift register of at least one embodiment of the present invention is a shift register supported by an insulative substrate, wherein: the shift register includes a plurality of stages each sequentially outputting output signals; each of the plurality of stages includes a first transistor for outputting the output signals, and a plurality of second transistors whose source region or drain region is electrically connected to a gate electrode of the first transistor; and the plurality of second transistors include a multi-channel transistor having an active layer including at least two channel regions, a source region and a drain region. This improves characteristics of a shift register forming a monolithic gate driver.
摘要翻译：本发明的至少一个实施例的移位寄存器是由绝缘衬底支持的移位寄存器，其中：移位寄存器包括顺序地输出输出信号的多个级; 多个级中的每一个包括用于输出输出信号的第一晶体管和源极区或漏极区电连接到第一晶体管的栅电极的多个第二晶体管; 并且所述多个第二晶体管包括具有包括至少两个沟道区的有源层，源极区和漏极区的多沟道晶体管。这改善了形成单片栅极驱动器的移位寄存器的特性。

4. 发明授权

US08436353B2 Thin film transistor with recess 有权
标题翻译：带凹槽的薄膜晶体管
公开(公告)号：US08436353B2
公开(公告)日：2013-05-07
申请号：US13001397
申请日：2009-09-14
申请人： Masao Moriguchi , Tokuo Yoshida , Yuhichi Saitoh , Yasuaki Iwase , Yosuke Kanzaki , Mayuko Sakamoto
发明人： Masao Moriguchi , Tokuo Yoshida , Yuhichi Saitoh , Yasuaki Iwase , Yosuke Kanzaki , Mayuko Sakamoto
IPC分类号： H01L29/41
CPC分类号： H01L29/78696 , H01L27/3262 , H01L29/41733 , H01L29/78609 , H01L29/78645
摘要： A semiconductor device 10 according to the present invention includes an active layer 14 supported on a substrate 11 and having two channel regions 14c1, 14c2, a source region 14s, a drain region 14d, and an intermediate region 14m formed between the two channel regions 14c1, 14c2; a contact layer 16 having a source contact region 16s, a drain contact region 16d, and an intermediate contact region 16m; a source electrode 18s; a drain electrode 18d; an intermediate electrode 18m; and a gate electrode 12 facing the two channel regions and the intermediate region through a gate insulating film 13 interposed therebetween. An entire portion of the intermediate electrode 18m that is located between the first channel region 14c1 and the second channel region 14c2 overlaps the gate electrode 12 through the intermediate region 14m and the gate insulating film 13.
摘要翻译：根据本发明的半导体器件10包括支撑在基板11上并具有两个沟道区域14c1,14c2的有源层14，形成在两个沟道区域14c1之间的源极区域14s，漏极区域14d和中间区域14m ，14c2; 具有源极接触区域16s，漏极接触区域16d和中间接触区域16m的接触层16; 源电极18s; 漏电极18d; 中间电极18m; 以及通过插入其间的栅极绝缘膜13面对两个沟道区域和中间区域的栅电极12。位于第一沟道区域14c1和第二沟道区域14c2之间的中间电极18m的整个部分通过中间区域14m和栅极绝缘膜13与栅电极12重叠。

5. 发明申请

US20110147756A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110147756A1
公开(公告)日：2011-06-23
申请号：US13001397
申请日：2009-09-14
申请人： Masao Moriguchi , Tokuo Yoshida , Yuhichi Saitoh , Yasuaki Iwase , Yosuke Kanzaki , Mayuko Sakamoto
发明人： Masao Moriguchi , Tokuo Yoshida , Yuhichi Saitoh , Yasuaki Iwase , Yosuke Kanzaki , Mayuko Sakamoto
IPC分类号： H01L29/786
CPC分类号： H01L29/78696 , H01L27/3262 , H01L29/41733 , H01L29/78609 , H01L29/78645
摘要： A semiconductor device 10 according to the present invention includes an active layer 14 supported on a substrate 11 and having two channel regions 14c1, 14c2, a source region 14s, a drain region 14d, and an intermediate region 14m formed between the two channel regions 14c1, 14c2; a contact layer 16 having a source contact region 16s, a drain contact region 16d, and an intermediate contact region 16m; a source electrode 18s; a drain electrode 18d; an intermediate electrode 18m; and a gate electrode 12 facing the two channel regions and the intermediate region through a gate insulating film 13 interposed therebetween. An entire portion of the intermediate electrode 18m that is located between the first channel region 14c1 and the second channel region 14c2 overlaps the gate electrode 12 through the intermediate region 14m and the gate insulating film 13.
摘要翻译：根据本发明的半导体器件10包括支撑在基板11上并具有两个沟道区域14c1,14c2的有源层14，形成在两个沟道区域14c1之间的源极区域14s，漏极区域14d和中间区域14m ，14c2; 具有源极接触区域16s，漏极接触区域16d和中间接触区域16m的接触层16; 源电极18s; 漏电极18d; 中间电极18m; 以及通过插入其间的栅极绝缘膜13面对两个沟道区域和中间区域的栅电极12。位于第一沟道区域14c1和第二沟道区域14c2之间的中间电极18m的整个部分通过中间区域14m和栅极绝缘膜13与栅电极12重叠。

6. 发明授权

US09001091B2 Scanning-signal-line driving circuit and display device including same 有权
标题翻译：扫描信号线驱动电路和包括它的显示装置
公开(公告)号：US09001091B2
公开(公告)日：2015-04-07
申请号：US13512389
申请日：2010-06-17
申请人： Mayuko Sakamoto , Yasuaki Iwase , Isao Ogasawara , Takaharu Yamada
发明人： Mayuko Sakamoto , Yasuaki Iwase , Isao Ogasawara , Takaharu Yamada
IPC分类号： G09G5/00 , G11C19/28 , G09G3/36 , G11C19/18
CPC分类号： G11C19/28 , G09G3/3655 , G09G3/3677 , G09G3/3688 , G09G2300/0426 , G09G2310/0286 , G09G2310/0289 , G09G2310/0291 , G09G2310/0294 , G09G2320/0223 , G11C19/184
摘要： In order to supply a low-level potential VSS from a trunk line for the low-level potential VSS to each stage of a shift register, a branch line and an auxiliary line are provided for every plurality of stages of the shift register, and the auxiliary lines are connected to the respective branch lines and the plurality of stages of the shift register. It is also possible to provide an auxiliary line having substantially the same length as the trunk line and to connect all of the branch lines and all of the stages in the shift register to this auxiliary line. A high-level potential VDD may also be supplied using the same method. Consequently, a scanning-signal-line driving circuit is provided in which the frame area and power consumption of a display panel can be reduced when formed on the display panel as an integral unit.
摘要翻译：为了将低电平电位VSS从低电位电位VSS提供给移位寄存器的每个级，为移位寄存器的每个级提供分支线和辅助线，并且辅助线路连接到相应的分支线路和移位寄存器的多个级。还可以提供具有与中继线大致相同长度的辅助线，并将移位寄存器中的所有分支线和所有级连接到该辅助线。也可以使用相同的方法提供高电平电位VDD。因此，提供了一种扫描信号线驱动电路，其中当作为整体单元形成在显示面板上时，可以减小显示面板的框架面积和功耗。

7. 发明授权

US08593210B2 Signal distribution device and display device 有权
标题翻译：信号分配装置和显示装置
公开(公告)号：US08593210B2
公开(公告)日：2013-11-26
申请号：US13144464
申请日：2009-09-29
申请人： Mayuko Sakamoto , Yoshihisa Takahashi , Yasuaki Iwase
发明人： Mayuko Sakamoto , Yoshihisa Takahashi , Yasuaki Iwase
IPC分类号： H03K17/687
CPC分类号： H01L29/458 , G02F1/13454 , G02F2001/13606 , G02F2201/124 , G09G3/3648 , G09G3/3655 , G09G3/3688 , H01L27/1214 , H01L27/1225 , H01L27/124 , H01L29/7869
摘要： A peripheral region of a display panel includes a signal distribution device (4) for time-dividing and distributing, to output terminals (7), an output signal from a source driver. The signal distribution device (4) includes switching elements (20) for the output terminals (7). Each switching element (20) is controlled by a selection signal supplied to a control line (9) connected with a gate electrode. Each switching element (20) includes a source electrode and the drain electrode each having a comb-like shape having a stem part and branch parts extending therefrom. In at least one switching element (20), only all of or part of the branch parts overlap the control line (9) and a semiconductor layer (10). This suppresses abnormal heat generation of a source driver in a display device including the signal distribution circuit by which an output signal from the source driver is distributed to pixels in time series.
摘要翻译：显示面板的外围区域包括：信号分配装置（4），用于对输出端子（7）进行分时和分配来自源极驱动器的输出信号。信号分配装置（4）包括用于输出端子（7）的开关元件（20）。每个开关元件（20）由提供给与栅电极连接的控制线（9）的选择信号控制。每个开关元件（20）包括源电极和漏电极，每个具有梳状形状，其具有杆部分和从其延伸的分支部分。在至少一个开关元件（20）中，只有全部或部分分支部分与控制线（9）和半导体层（10）重叠。这抑制了包括信号分配电路的显示装置中的源极驱动器的异常发热，通过该信号分配电路，来自源极驱动器的输出信号以时间序列分布到像素。

8. 发明授权

US08587509B2 Display device and drive method for driving the same 有权
标题翻译：显示装置及其驱动方法
公开(公告)号：US08587509B2
公开(公告)日：2013-11-19
申请号：US12998517
申请日：2009-06-12
申请人： Yoshihisa Takahashi , Yasuaki Iwase , Mayuko Sakamoto
发明人： Yoshihisa Takahashi , Yasuaki Iwase , Mayuko Sakamoto
IPC分类号： G09G3/36
CPC分类号： G09G3/3688 , G09G2310/027 , G09G2310/0297 , G09G2320/0219
摘要： A display device of at least one embodiment of the present invention has a connection changeover circuit, including switch elements for time-division driving, formed on a liquid crystal panel, and the switch elements are paired so that two switch elements in each pair are connected in parallel to one video signal line. The paired switch elements are turned on at the same time, and immediately before one of the switch elements is turned off upon completion of a charging period for its corresponding video signal line, only the other switch element is turned off. As a result, while maintaining drive performance, it is possible to solve the impact of fieldthrough phenomenon caused by one of the switch elements, which are transistors, and also reduce parasitic capacitance formed in the other switch element, thereby suppress the impact of fieldthrough phenomenon caused by that switch element.
摘要翻译：本发明的至少一个实施例的显示装置具有形成在液晶面板上的包括用于时分驱动的开关元件的连接切换电路，并且开关元件配对，使得每对中的两个开关元件被连接与一条视频信号线并联。成对的开关元件同时导通，并且在其相应的视频信号线的充电周期完成之后，在其中一个开关元件关闭之前，只有另一个开关元件被关断。结果，在保持驱动性能的同时，可以解决由作为晶体管的开关元件之一引起的场通过现象的影响，并且还减少在另一个开关元件中形成的寄生电容，从而抑制场通现象的影响由该开关元件引起。

9. 发明申请

US20120235983A1 SCANNING-SIGNAL-LINE DRIVING CIRCUIT AND DISPLAY DEVICE INCLUDING SAME 有权
标题翻译：扫描信号线驱动电路和包括其的显示装置
公开(公告)号：US20120235983A1
公开(公告)日：2012-09-20
申请号：US13512389
申请日：2010-06-17
申请人： Mayuko Sakamoto , Yasuaki Iwase , Isao Ogasawara , Takaharu Yamada
发明人： Mayuko Sakamoto , Yasuaki Iwase , Isao Ogasawara , Takaharu Yamada
IPC分类号： G09G5/00
CPC分类号： G11C19/28 , G09G3/3655 , G09G3/3677 , G09G3/3688 , G09G2300/0426 , G09G2310/0286 , G09G2310/0289 , G09G2310/0291 , G09G2310/0294 , G09G2320/0223 , G11C19/184
摘要： In order to supply a low-level potential VSS from a trunk line (21) for the low-level potential VSS to each stage of a shift register (11), a branch line (22) and an auxiliary line (23) are provided for every plurality of stages of the shift register (11), and the auxiliary lines (23) are connected to the respective branch lines (22) and the plurality of stages of the shift register (11). It is also possible to provide an auxiliary line (23) having substantially the same length as the trunk line (21) and to connect all of the branch lines (22) and all of the stages in the shift register (11) to this auxiliary line (23). A high-level potential VDD may also be supplied using the same method. Consequently, a scanning-signal-line driving circuit is provided in which the frame area and power consumption of a display panel can be reduced when formed on the display panel as an integral unit.
摘要翻译：为了从用于低电平电位VSS的干线（21）向移位寄存器（11）的各级提供低电平电位VSS，提供分支线（22）和辅助线（23）对于移位寄存器（11）的每个级，并且辅助线（23）连接到移位寄存器（11）的相应分支线（22）和多级。还可以提供具有与中继线（21）基本上相同长度的辅助线（23），并将移位寄存器（11）中的所有分支线（22）和所有级连接到该辅助线线（23）。也可以使用相同的方法提供高电平电位VDD。因此，提供了一种扫描信号线驱动电路，其中当作为整体单元形成在显示面板上时，可以减小显示面板的框架面积和功耗。

10. 发明申请

US20110205194A1 DISPLAY DEVICE AND METHOD FOR DRIVING THE SAME 有权
标题翻译：显示装置及其驱动方法
公开(公告)号：US20110205194A1
公开(公告)日：2011-08-25
申请号：US12998517
申请日：2009-06-12
申请人： Yoshihisa Takahashi , Yasuaki Iwase , Mayuko Sakamoto
发明人： Yoshihisa Takahashi , Yasuaki Iwase , Mayuko Sakamoto
IPC分类号： G09G5/00
CPC分类号： G09G3/3688 , G09G2310/027 , G09G2310/0297 , G09G2320/0219
摘要： A display device of at least one embodiment of the present invention has a connection changeover circuit, including switch elements for time-division driving, formed on a liquid crystal panel, and the switch elements are paired so that two switch elements in each pair are connected in parallel to one video signal line. The paired switch elements are turned on at the same time, and immediately before one of the switch elements is turned off upon completion of a charging period for its corresponding video signal line, only the other switch element is turned off. As a result, while maintaining drive performance, it is possible to solve the impact of fieldthrough phenomenon caused by one of the switch elements, which are transistors, and also reduce parasitic capacitance formed in the other switch element, thereby suppress the impact of fieldthrough phenomenon caused by that switch element.
摘要翻译：本发明的至少一个实施例的显示装置具有形成在液晶面板上的包括用于时分驱动的开关元件的连接切换电路，并且开关元件配对，使得每对中的两个开关元件被连接与一条视频信号线并联。成对的开关元件同时导通，并且在其相应的视频信号线的充电周期完成之后，在其中一个开关元件关闭之前，只有另一个开关元件被关断。结果，在保持驱动性能的同时，可以解决由作为晶体管的开关元件之一引起的场通过现象的影响，并且还减少在另一个开关元件中形成的寄生电容，从而抑制场通现象的影响由该开关元件引起。

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