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1. 发明授权

US09196742B2 Thin film transistor substrate, method for manufacturing the same, and liquid crystal display panel 有权
标题翻译：薄膜晶体管基板，其制造方法和液晶显示面板
公开(公告)号：US09196742B2
公开(公告)日：2015-11-24
申请号：US13813839
申请日：2011-07-28
申请人： Yohsuke Kanzaki , Yuhichi Saitoh , Yoshiki Nakatani , Tetsuya Okamoto , Yudai Takanishi
发明人： Yohsuke Kanzaki , Yuhichi Saitoh , Yoshiki Nakatani , Tetsuya Okamoto , Yudai Takanishi
IPC分类号： H01L29/786 , G02F1/1368 , H01L27/12 , H01L29/66
CPC分类号： H01L29/7869 , G02F1/1368 , H01L27/1225 , H01L27/1255 , H01L27/1288 , H01L29/66742 , H01L29/66969
摘要： A TFT substrate (20a) includes a plurality of pixel electrodes (17a) provided in a matrix, a plurality of TFTs (5) each provided for a corresponding one of the pixel electrodes (17a), and a plurality of auxiliary capacitors (6a) each provided for a corresponding one of the pixel electrodes (17a). Each of the auxiliary capacitors (6a) includes a capacitor line (11b) made of a material identical to that of the gate electrode (11aa) of the TFT (5) and provided in a layer identical to that of the gate electrode (11aa) of the TFT (5), the gate insulating film (12) provided so as to cover the capacitor line (11b), and a corresponding one of the pixel electrodes (17a) provided on the gate insulating film (12) so as to overlap with the capacitor line (11b) and being in conduction with a drain electrode (14ca).
摘要翻译： TFT基板（20a）包括以矩阵形式设置的多个像素电极（17a），分别设置在相应的像素电极（17a）中的多个TFT（5）和多个辅助电容器（6a）每个设置用于相应的一个像素电极（17a）。每个辅助电容器（6a）包括由与TFT（5）的栅电极（11aa）相同的材料制成并且设置在与栅电极（11aa）相同的层中的电容器线（11b）设置为覆盖电容线（11b）的TFT（5），栅极绝缘膜（12）和设置在栅极绝缘膜（12）上的相应的像素电极（17a）重叠与电容器线（11b）并且与漏电极（14ca）导通。

2. 发明申请

US20130215370A1 DISPLAY DEVICE SUBSTRATE, METHOD FOR PRODUCING THE SAME, AND DISPLAY DEVICE 审中-公开
标题翻译：显示装置基板，其制造方法和显示装置
公开(公告)号：US20130215370A1
公开(公告)日：2013-08-22
申请号：US13817246
申请日：2011-05-11
申请人： Yudai Takanishi , Yohsuke Kanzaki , Tetsuya Okamoto , Yuhichi Saitoh , Yoshiki Nakatani
发明人： Yudai Takanishi , Yohsuke Kanzaki , Tetsuya Okamoto , Yuhichi Saitoh , Yoshiki Nakatani
IPC分类号： G02F1/1362 , H01L33/00
CPC分类号： G02F1/136227 , G02F1/13458 , H01L27/1225 , H01L27/124 , H01L27/1288 , H01L29/45 , H01L29/7869 , H01L33/0041
摘要： A thin film transistor substrate (20) includes: an insulating substrate (10a); a gate insulating layer (12) provided on the insulating substrate (10a); a connection layer (25) provided on the gate insulating layer (12), and made of indium gallium zinc oxide (IGZO); a drain electrode (16b) provided on the connection layer (25), and made of titanium; a contact hole (Ca) formed in the connection layer (25) and the drain electrode (16b); and a pixel electrode (19a) provided on a surface of the contact hole (Ca), and contacting the connection layer (25). The drain electrode (16b) and the pixel electrode (19a) are electrically connected together through the connection layer (25).
摘要翻译：薄膜晶体管基板（20）包括：绝缘基板（10a）; 设置在绝缘基板（10a）上的栅绝缘层（12）; 设置在所述栅极绝缘层（12）上并由铟镓锌氧化物（IGZO）制成的连接层（25）; 设置在所述连接层（25）上并由钛制成的漏电极（16b）形成在连接层（25）和漏电极（16b）中的接触孔（Ca）; 以及设置在所述接触孔（Ca）的表面上并与所述连接层（25）接触的像素电极（19a）。漏极电极（16b）和像素电极（19a）通过连接层（25）电连接在一起。

3. 发明授权

US08623681B2 Thin film transistor substrate, method for manufacturing the same, and liquid crystal display panel 有权
标题翻译：薄膜晶体管基板，其制造方法和液晶显示面板
公开(公告)号：US08623681B2
公开(公告)日：2014-01-07
申请号：US13808375
申请日：2011-07-01
申请人： Yoshiki Nakatani , Yuhichi Saitoh , Tetsuya Okamoto , Yohsuke Kanzaki , Yudai Takanishi
发明人： Yoshiki Nakatani , Yuhichi Saitoh , Tetsuya Okamoto , Yohsuke Kanzaki , Yudai Takanishi
IPC分类号： H01L21/00
CPC分类号： H01L27/1255 , G02F1/136213 , G02F1/13624 , G02F1/1368 , G02F2001/133397 , G02F2001/13606 , G02F2001/136236 , H01L27/1225 , H01L27/1259 , H01L27/1288
摘要： An auxiliary capacitor (6a) includes a capacitor line (11ba), a gate insulating film (12) provided so as to cover the capacitor line (11ba), a semiconductor layer (13b) provided on the gate insulating film (12) so as to overlap with the capacitor line (11b), and a drain electrode (14ba) provided on the semiconductor layer (13b) and connected to a pixel electrode (16a). The semiconductor layer (13b) made of an oxide semiconductor and the pixel electrode (16a) made of an oxide conductor contact each other.
摘要翻译：辅助电容器（6a）包括电容器线（11ba），设置为覆盖电容器线（11ba）的栅极绝缘膜（12），设置在栅极绝缘膜（12）上的半导体层（13b）与电容器线（11b）重叠，以及设置在半导体层（13b）上并连接到像素电极（16a）的漏电极（14ba）。由氧化物半导体构成的半导体层（13b）和由氧化物导体构成的像素电极（16a）彼此接触。

4. 发明申请

US20140028944A1 THIN FILM TRANSISTOR SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, AND LIQUID CRYSTAL DISPLAY PANEL 有权
标题翻译：薄膜晶体管基板，其制造方法和液晶显示面板
公开(公告)号：US20140028944A1
公开(公告)日：2014-01-30
申请号：US13813839
申请日：2011-07-28
申请人： Yohsuke Kanzaki , Yuhichi Saitoh , Yoshiki Nakatani , Tetsuya Okamoto , Yudai Takanishi
发明人： Yohsuke Kanzaki , Yuhichi Saitoh , Yoshiki Nakatani , Tetsuya Okamoto , Yudai Takanishi
IPC分类号： H01L29/786 , G02F1/1368 , H01L29/66
CPC分类号： H01L29/7869 , G02F1/1368 , H01L27/1225 , H01L27/1255 , H01L27/1288 , H01L29/66742 , H01L29/66969
摘要： A TFT substrate (20a) includes a plurality of pixel electrodes (17a) provided in a matrix, a plurality of TFTs (5) each provided for a corresponding one of the pixel electrodes (17a), and a plurality of auxiliary capacitors (6a) each provided for a corresponding one of the pixel electrodes (17a). Each of the auxiliary capacitors (6a) includes a capacitor line (11b) made of a material identical to that of the gate electrode (11aa) of the TFT (5) and provided in a layer identical to that of the gate electrode (11aa) of the TFT (5), the gate insulating film (12) provided so as to cover the capacitor line (11b), and a corresponding one of the pixel electrodes (17a) provided on the gate insulating film (12) so as to overlap with the capacitor line (11b) and being in conduction with a drain electrode (14ca).
摘要翻译： TFT基板（20a）包括以矩阵形式设置的多个像素电极（17a），分别设置在相应的像素电极（17a）中的多个TFT（5）和多个辅助电容器（6a）每个设置用于相应的一个像素电极（17a）。每个辅助电容器（6a）包括由与TFT（5）的栅电极（11aa）相同的材料制成并且设置在与栅电极（11aa）相同的层中的电容器线（11b）设置为覆盖电容线（11b）的TFT（5），栅极绝缘膜（12）和设置在栅极绝缘膜（12）上的相应的像素电极（17a）重叠与电容器线（11b）并且与漏电极（14ca）导通。

5. 发明申请

US20130214272A1 THIN FILM TRANSISTOR SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, AND LIQUID CRYSTAL DISPLAY PANEL 有权
标题翻译：薄膜晶体管基板，其制造方法和液晶显示面板
公开(公告)号：US20130214272A1
公开(公告)日：2013-08-22
申请号：US13808375
申请日：2011-07-01
申请人： Yoshiki Nakatani , Yuhichi Saitoh , Tetsuya Okamoto , Yohsuke Kanzaki , Yudai Takanishi
发明人： Yoshiki Nakatani , Yuhichi Saitoh , Tetsuya Okamoto , Yohsuke Kanzaki , Yudai Takanishi
IPC分类号： H01L27/12
CPC分类号： H01L27/1255 , G02F1/136213 , G02F1/13624 , G02F1/1368 , G02F2001/133397 , G02F2001/13606 , G02F2001/136236 , H01L27/1225 , H01L27/1259 , H01L27/1288
摘要： An auxiliary capacitor (6a) includes a capacitor line (11ba), a gate insulating film (12) provided so as to cover the capacitor line (11ba), a semiconductor layer (13b) provided on the gate insulating film (12) so as to overlap with the capacitor line (11b), and a drain electrode (14ba) provided on the semiconductor layer (13b) and connected to a pixel electrode (16a). The semiconductor layer (13b) made of an oxide semiconductor and the pixel electrode (16a) made of an oxide conductor contact each other.
摘要翻译：辅助电容器（6a）包括电容器线（11ba），设置为覆盖电容器线（11ba）的栅极绝缘膜（12），设置在栅极绝缘膜（12）上的半导体层（13b）与电容器线（11b）重叠，以及设置在半导体层（13b）上并连接到像素电极（16a）的漏电极（14ba）。由氧化物半导体构成的半导体层（13b）和由氧化物导体构成的像素电极（16a）彼此接触。

6. 发明申请

US20130208207A1 DISPLAY DEVICE SUBSTRATE, METHOD FOR PRODUCING THE SAME, AND DISPLAY DEVICE 审中-公开
标题翻译：显示装置基板，其制造方法和显示装置
公开(公告)号：US20130208207A1
公开(公告)日：2013-08-15
申请号：US13806235
申请日：2011-05-24
申请人： Tetsuya Okamoto , Yoshiki Nakatani , Yudai Takanishi , Yohsuke Kanzaki , Yuhichi Saitoh
发明人： Tetsuya Okamoto , Yoshiki Nakatani , Yudai Takanishi , Yohsuke Kanzaki , Yuhichi Saitoh
IPC分类号： H01L29/04 , G02F1/1368
CPC分类号： H01L29/04 , G02F1/13458 , G02F1/1368 , H01L27/1225 , H01L27/124 , H01L29/7869
摘要： An active matrix substrate (20) includes: a gate electrode (11) provided on an insulating substrate (10a); a gate insulating layer (12) covering the gate electrode (11); an oxide semiconductor layer (13) provided on the gate insulating layer (12); and a protective layer (17) covering the oxide semiconductor layer (13). The active matrix substrate (20) has a display region (D) where an image is displayed and a gate terminal region (Ts) located around the display region (D) and including a gate terminal (26) for connection to an external circuit. The gate terminal (26) includes a terminal line (21) provided on the insulating substrate (10a). The terminal line (26) is made of a conductive material different from a material constituting the oxide semiconductor layer (13).
摘要翻译：有源矩阵基板（20）包括：设置在绝缘基板（10a）上的栅电极（11）; 覆盖所述栅电极的栅极绝缘层（12）; 设置在栅绝缘层（12）上的氧化物半导体层（13）; 和覆盖氧化物半导体层（13）的保护层（17）。有源矩阵基板（20）具有显示图像的显示区域（D）和位于显示区域（D）周围的栅极端子区域（Ts），并且包括用于连接到外部电路的栅极端子（26）。栅极端子（26）包括设置在绝缘基板（10a）上的端子线（21）。端子线（26）由与构成氧化物半导体层（13）的材料不同的导电材料制成。

7. 发明申请

US20120224118A1 LIQUID CRYSTAL DISPLAY DEVICE 审中-公开
标题翻译：液晶显示装置
公开(公告)号：US20120224118A1
公开(公告)日：2012-09-06
申请号：US13509369
申请日：2010-06-18
申请人： Yohsuke Kanzaki , Yuhichi Saitoh
发明人： Yohsuke Kanzaki , Yuhichi Saitoh
IPC分类号： G02F1/1337 , G02F1/1339
CPC分类号： G02F1/133711 , G02F1/13458
摘要： On the surface of a first substrate on the side of a liquid crystal layer, an alignment film formed by curing a resin material having fluidity is provided so as to expand from a pixel region to a part of a terminal region through a connection region. At least between mounting terminals and the pixel region, a restriction structure portion for restricting the flow of the resin material that has not cured yet is formed. Each of the plurality of mounting terminals exposed to outside from the alignment film.
摘要翻译：在液晶层侧的第一基板的表面上，通过固化具有流动性的树脂材料形成的取向膜，通过连接区域从像素区域扩展到端子区域的一部分。至少在安装端子和像素区域之间，形成用于限制尚未固化的树脂材料的流动的限制结构部分。多个安装端子中的每一个暴露于取向膜的外部。

8. 发明申请

US20110274234A1 SHIFT REGISTER 审中-公开
标题翻译：移位寄存器
公开(公告)号：US20110274234A1
公开(公告)日：2011-11-10
申请号：US12998686
申请日：2009-11-19
申请人： Mayuko Sakamoto , Masao Moriguchi , Yasuaki Iwase , Yuhichi Saitoh , Tokuo Yoshida , Yohsuke Kanzaki
发明人： Mayuko Sakamoto , Masao Moriguchi , Yasuaki Iwase , Yuhichi Saitoh , Tokuo Yoshida , Yohsuke Kanzaki
IPC分类号： G11C19/00
CPC分类号： H01L29/78696 , G09G3/20 , G09G2310/0267 , G09G2310/0286 , G11C19/184 , H01L27/12 , H01L29/04 , H01L29/41733 , H01L29/78618
摘要： A shift register of at least one embodiment of the present invention is a shift register supported by an insulative substrate, wherein: the shift register includes a plurality of stages each sequentially outputting output signals; each of the plurality of stages includes a first transistor for outputting the output signals, and a plurality of second transistors whose source region or drain region is electrically connected to a gate electrode of the first transistor; and the plurality of second transistors include a multi-channel transistor having an active layer including at least two channel regions, a source region and a drain region. This improves characteristics of a shift register forming a monolithic gate driver.
摘要翻译：本发明的至少一个实施例的移位寄存器是由绝缘衬底支持的移位寄存器，其中：移位寄存器包括顺序地输出输出信号的多个级; 多个级中的每一个包括用于输出输出信号的第一晶体管和源极区或漏极区电连接到第一晶体管的栅电极的多个第二晶体管; 并且所述多个第二晶体管包括具有包括至少两个沟道区的有源层，源极区和漏极区的多沟道晶体管。这改善了形成单片栅极驱动器的移位寄存器的特性。

9. 发明授权

US08648975B2 Liquid crystal display device with potential varying capacitance electrode 有权
标题翻译：具有电位变化的电容电极的液晶显示装置
公开(公告)号：US08648975B2
公开(公告)日：2014-02-11
申请号：US13699369
申请日：2011-04-12
申请人： Yuhichi Saitoh
发明人： Yuhichi Saitoh
IPC分类号： G02F1/1343 , G02F1/136 , G09G3/36 , H01L29/04
CPC分类号： G09G3/3659 , G02F1/136213 , G02F1/13624 , G02F2001/134345 , G09G2300/0426 , G09G2300/0852 , G09G2300/0876 , G09G2310/0205 , G09G2320/028 , H01L27/12 , H01L27/1225
摘要： In a liquid crystal display device in which one pixel is divided into the plurality of subpixels, a narrow picture-frame is realized by decreasing a wiring region without reducing a display quality. One of two sub-pixel portions includes a second transistor (TB) having a gate connected to a first scanning signal line (GL) and having a source connected to a data signal line (SL), a pixel electrode (EB) connected to a drain of the second transistor (TB), a liquid crystal capacitance (ClcB) formed by a common electrode (41) and the pixel electrode (EB), a third transistor (TC) having a gate connected to a second scanning signal line (G2L) and having a source connected to a line SEL, a capacitance electrode (EC) connected to a drain of the third transistor (TC), and a capacitance (Cl) formed by the pixel electrode (EB) and the capacitance electrode (EC). A high potential and a low potential are alternately provided to the line SEL for each one frame. The second scanning signal line (G2L) is selected after the first scanning signal line (GL) is selected.
摘要翻译：在一个像素被划分成多个子像素的液晶显示装置中，通过减少布线区域而不降低显示质量来实现窄的图像帧。两个子像素部分中的一个包括具有连接到第一扫描信号线（GL）并且具有连接到数据信号线（SL）的源极的栅极的第二晶体管（TB），连接到数据信号线第二晶体管（TB）的漏极，由公共电极（41）和像素电极（EB）形成的液晶电容（ClcB），具有与第二扫描信号线（G2L）连接的栅极的第三晶体管），并且具有连接到线SEL的源极，连接到第三晶体管（TC）的漏极的电容电极（EC）和由像素电极（EB）和电容电极（EC）形成的电容（Cl）。每一帧交替地向线SEL提供高电位和低电位。在选择第一扫描信号线（GL）之后，选择第二扫描信号线（G2L）。

10. 发明申请

US20060086937A1 Tft array substrate, liquid crystal display device, manufacturing methods of tft array substrate and liquid crystal display device, and electronic device 审中-公开
标题翻译： Tft阵列基板，液晶显示装置，tft阵列基板和液晶显示装置的制造方法以及电子装置
公开(公告)号：US20060086937A1
公开(公告)日：2006-04-27
申请号：US10526009
申请日：2003-08-29
申请人： Akiyoshi Fujii , Takaya Nakabayashi , Hisao Ochi , Takaeshi Hara , Yuhichi Saitoh
发明人： Akiyoshi Fujii , Takaya Nakabayashi , Hisao Ochi , Takaeshi Hara , Yuhichi Saitoh
IPC分类号： H01L29/04
CPC分类号： H01L27/1292 , H01L29/42384 , H01L29/66765 , H01L29/78633 , H01L29/78696
摘要： A TFT array substrate includes a thin film transistor section in which a gate electrode is formed on a substrate, and a semiconductor layer is formed on the gate electrode via a gate insulation layer. The semiconductor layer of this TFT array substrate has a shape formed by dropping a droplet. Accordingly, it is possible to directly forming a semiconductor layer, or a resist layer for forming the semiconductor layer, by dropping a droplet(s). On this account, the present invention allows the use of an inkjet method, thus reducing costs and numbers of manufacturing processes.
摘要翻译： TFT阵列基板包括薄膜晶体管部分，其中栅电极形成在基板上，半导体层经栅极绝缘层形成在栅电极上。该TFT阵列基板的半导体层具有通过滴下液滴形成的形状。因此，可以通过滴下液滴直接形成半导体层或用于形成半导体层的抗蚀剂层。因此，本发明允许使用喷墨方法，从而降低制造工艺的成本和数量。

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