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1. 发明授权

US06515891B2 Random access memory with hidden bits 有权
公开(公告)号：US06515891B2
公开(公告)日：2003-02-04
申请号：US09996260
申请日：2001-11-28
申请人： Matthias Krönke , Günther Schindler
发明人： Matthias Krönke , Günther Schindler
IPC分类号： G11C1122
CPC分类号： G11C11/404 , G11C7/20
摘要： A random access memory having a multiplicity of memory cells having logic states that can be changed by a control voltage. At least some of the memory cells include an additional device that can be activated by means of an enforced control voltage that is different from the control voltage, in order to impress a defined logic state on the memory cell.

2. 发明授权

US07276300B2 Microelectronic structure having a hydrogen barrier layer 有权
标题翻译：具有氢阻挡层的微电子结构
公开(公告)号：US07276300B2
公开(公告)日：2007-10-02
申请号：US10476579
申请日：2002-04-22
申请人： Zvonimir Gabric , Walter Hartner , Matthias Krönke , Günther Schindler
发明人： Zvonimir Gabric , Walter Hartner , Matthias Krönke , Günther Schindler
IPC分类号： B32B9/00
CPC分类号： H01L28/55 , H01L23/564 , H01L27/11502 , H01L2924/0002 , H01L2924/00
摘要： The invention relates to a microelectronic structure which provides improved protection of a hydrogen-sensitive dielectric against hydrogen contamination. According to the invention, the hydrogen sensitive dielectric (14) is covered at lest by an intermediate oxide (18), where material thickness is at lest five times the thickness of the hydrogen-sensitive dielectric. The intermediate oxide (18) simultaneously acts as an internal dielectric and is metabolized on its surface for this purpose. The intermediate oxide (18), which has a sufficient thickness absorbers the hydrogen that may be released during the deposition of a hydrogen barrier layer (22, 26), thus protecting the hydrogen-sensitive dielectric (14).
摘要翻译：本发明涉及一种微电子结构，其提供对氢敏感介质的改善的防止氢污染的保护。根据本发明，氢敏电介质（14）几乎被中间氧化物（18）覆盖，其中材料厚度是氢敏电介质厚度的五倍。中间氧化物（18）同时作为内部电介质，为此目的在其表面上代谢。具有足够厚度的中间氧化物（18）吸收在氢阻挡层（22,26）的沉积过程中可释放的氢，从而保护感应电介质（14）。

3. 发明授权

US07262984B2 Method and apparatus for storing and reading information in a ferroelectric material 有权
标题翻译：用于在铁电材料中存储和读取信息的方法和装置
公开(公告)号：US07262984B2
公开(公告)日：2007-08-28
申请号：US11034219
申请日：2005-01-13
申请人： Günther Schindler , Markus Vogel , Christian Erich Zybill
发明人： Günther Schindler , Markus Vogel , Christian Erich Zybill
IPC分类号： G11C11/22
CPC分类号： G11B9/1409 , B82Y10/00 , G11B9/02 , G11B9/14 , G11B9/1445 , G11B9/1463 , G11B11/007 , G11B11/16
摘要： To store information in a ferroelectric material, a sample probe is used to bring about mechanical action on individual domains and thereby to cause a reversal of polarization in the individual domains, with electrodes situated below the ferroelectric material being able to have a bias applied to them to stabilize the change/reversal of polarization. The reversal of polarization causes an alteration in the surface topography of the ferroelectric material, and this alteration can be used to read the information. The stored information is therefore obtained by ascertaining the surface topography of the ferroelectric material. The information is written and read using an AFM tip, with the tip being able to be operated in contact or tapping mode for the purpose of writing, and additionally in noncontact mode for the purpose of reading.
摘要翻译：为了将信息存储在铁电材料中，使用样本探针来对各个区域产生机械作用，从而导致各个区域中的极化反转，位于铁电材料下方的电极能够施加偏压以稳定极化的变化/反转。极化的反转导致铁电材料的表面形貌的变化，并且这种改变可以用于读取信息。因此，通过确定铁电材料的表面形貌来获得所存储的信息。使用AFM提示书写入和读取信息，为了写入目的，提示能够以接触或敲击模式操作，另外以非接触模式进行阅读。

4. 发明授权

US06681148B2 Monitoring system for a conveying device for flat articles, especially wafers 失效
标题翻译：用于扁平制品，特别是晶片的输送装置的监测系统
公开(公告)号：US06681148B2
公开(公告)日：2004-01-20
申请号：US10149046
申请日：2002-06-03
申请人： Hans Lettner , Xaver Kollmer , Günther Schindler , Ernst Georg Frisch
发明人： Hans Lettner , Xaver Kollmer , Günther Schindler , Ernst Georg Frisch
IPC分类号： G06F700
CPC分类号： H01L21/67259 , G05B19/404 , G05B2219/37555 , G05B2219/37571 , H01L21/67742 , Y10S414/137
摘要： The invention relates to a monitoring system for a conveying device for flat articles, especially wafers, which conveying device is provided with a carriage (28) that is movable along a predetermined path next to a flat article (10) that is located at a predetermined removal location, the carriage having a receiving device for the accommodation of the flat article (10), which monitoring system contains a light source (50) having a light-exit window and a light receiver (52) having a light-admission window, whereby the light-exit window and the light-admission window are positioned in such a way that a light beam (60) directed form the light-exit window to the light-admission window is partially covered by the carriage (28) during its movement through the light beam, and an evaluation unit that is connected to the light receiver and that compares a target signal derived from its movement of the carriage along a target path with an actual signal derived from an actual movement of the carriage, and indicates a deviation.
摘要翻译：本发明涉及一种用于扁平制品，特别是晶片的输送装置的监测系统，该输送装置设置有可沿着预定路径移动的托架（28），所述托架位于预定的平坦制品（10）旁边，所述托架具有用于平坦物品（10）的容纳的接收装置，该监视系统包含具有出射窗的光源（50）和具有入光窗的光接收器（52）由此所述出光窗口和所述光入口窗口被定位成使得从所述光出射窗口到所述入光窗口的指向的光束（60）在其运动期间被所述托架（28）部分地覆盖通过光束，以及评估单元，其连接到光接收器，并且将从其沿着目标路径的滑架的移动导出的目标信号与从轿厢的实际运动导出的实际信号进行比较并且表示偏差。

5. 发明授权

US06586348B2 Method for preventing etching-induced damage to a metal oxide film by patterning the film after a nucleation anneal but while still amorphous and then thermally annealing to crystallize 有权
标题翻译：通过在成核退火之后对膜进行图案化但是仍然是无定形然后热退火以结晶的方法来防止蚀刻对金属氧化物膜的损伤
公开(公告)号：US06586348B2
公开(公告)日：2003-07-01
申请号：US09850585
申请日：2001-05-07
申请人： Walter Hartner , Günther Schindler , Frank Hintermaier , Volker Weinrich
发明人： Walter Hartner , Günther Schindler , Frank Hintermaier , Volker Weinrich
IPC分类号： H01L2131
CPC分类号： H01L21/02197 , H01L21/02356 , H01L21/31122 , H01L21/31691 , H01L21/32136 , H01L28/55
摘要： After an SBT layer is precipitated onto a substrate, the SBT layer is structured as a still amorphous layer. Only subsequently is it subjected to a crystallization process. Layers produced in this manner have a relatively high degree of dielectric strength and have no stoichiometric deviations on the etched edges.
摘要翻译：在SBT层沉积到衬底上之后，SBT层被构造为静止非晶层。只有随后才进行结晶过程。以这种方式生产的层具有相对高的介电强度，并且在蚀刻的边缘上不具有化学计量偏差。

6. 发明授权

US06730562B2 Method of patterning ferroelectric layers 失效
标题翻译：铁电层图案的方法
公开(公告)号：US06730562B2
公开(公告)日：2004-05-04
申请号：US10364819
申请日：2003-02-11
申请人： Manfred Engelhardt , Walter Hartner , Frank Hintermaier , Günther Schindler , Volker Weinrich
发明人： Manfred Engelhardt , Walter Hartner , Frank Hintermaier , Günther Schindler , Volker Weinrich
IPC分类号： H01L218242
CPC分类号： H01L28/55 , H01L21/31122
摘要： A method for structuring ferroelectric layers on semiconductor substrates retains or regenerates the adherence and breakdown voltage resistance of the ferroelectric layer, which is especially significant for producing storage capacitors in large-scale integrated FeRAM and DRAM memory components. The addition of H2O or O2 results principally in the recovery of the electrostatic breakdown strength of the ferroelectric layer, which is of importance in particular when the ferroelectric serves as a dielectric of a storage capacitor and has to withstand electric fields of 5-10×106 V/m without a significant leakage current.
摘要翻译：用于在半导体衬底上构造铁电层的方法保留或再生强电介质层的粘附和耐击穿电压，这对于在大规模集成的FeRAM和DRAM存储器组件中产生存储电容器尤其重要。 H 2 O或O 2的添加主要导致铁电层的静电击穿强度的恢复，特别是当铁电体用作储能电容器的电介质并且必须承受5-10×10 6的电场时，这尤其重要 > V / m，没有明显的漏电流。

7. 发明授权

US06627934B1 Integrated semiconductor memory configuration with a buried plate electrode and method for its fabrication 失效
标题翻译：具有掩埋板电极的集成半导体存储器配置及其制造方法
公开(公告)号：US06627934B1
公开(公告)日：2003-09-30
申请号：US09281696
申请日：1999-03-30
申请人： Günther Schindler , Carlos Mazure-Espejo
发明人： Günther Schindler , Carlos Mazure-Espejo
IPC分类号： H01L27108
CPC分类号： H01L27/11502 , H01L27/10805 , H01L27/10829
摘要： A semiconductor memory configuration has a plurality of selection transistors. Each selection transistor is connected to a first electrode of a storage capacitor. A second electrode of the storage capacitor is connected to a common plate. The common plate is provided below the selection transistors in a semiconductor body. A method of fabricating a semiconductor memory configuration is also provided.
摘要翻译：半导体存储器配置具有多个选择晶体管。每个选择晶体管连接到存储电容器的第一电极。存储电容器的第二电极连接到公共板。公共板设置在半导体本体中的选择晶体管的下方。还提供了制造半导体存储器配置的方法。

8. 发明授权

US06197633B1 Method for the production of an integrated semiconductor memory configuration 有权
标题翻译：用于生产集成半导体存储器配置的方法
公开(公告)号：US06197633B1
公开(公告)日：2001-03-06
申请号：US09281822
申请日：1999-03-30
申请人： Günther Schindler , Walter Hartner , Carlos Mazure-Espejo
发明人： Günther Schindler , Walter Hartner , Carlos Mazure-Espejo
IPC分类号： H01L218242
CPC分类号： H01L27/10852 , H01L27/10817
摘要： A method for producing a memory configuration that comprises a multiplicity of memory cells, and has storage capacitors whose first electrodes are configured in plate form in a parallel manner one above the other. These electrodes are in electrical contact with selection transistors of the memory cell through contact plugs having different lengths. The first electrodes preferably extend beyond the cell area of one memory cell.
摘要翻译：一种用于产生包括多个存储单元的存储器配置的方法，并且具有其第一电极以彼此并列的方式配置为板形的存储电容器。这些电极通过具有不同长度的接触插塞与存储器单元的选择晶体管电接触。优选地，第一电极延伸超过一个存储单元的单元区域。

9. 发明授权

US06852240B2 Method of manufacturing a ferroelectric capacitor configuration 失效
标题翻译：铁电电容器配置的制造方法
公开(公告)号：US06852240B2
公开(公告)日：2005-02-08
申请号：US09793350
申请日：2001-02-26
申请人： Walter Hartner , Günther Schindler , Volker Weinrich , Igor Kasko
发明人： Walter Hartner , Günther Schindler , Volker Weinrich , Igor Kasko
IPC分类号： H01L27/105 , H01L21/02 , H01L21/8246 , H01G13/00
CPC分类号： H01L28/55 , H01L28/60 , H01L28/75
摘要： A ferroelectric capacitor configuration is configured with at least two different coercitive voltages. A first electrode structure having a surface which forms at least two levels is firstly produced. A layer of ferroelectric material of varying thickness is deposited over the first electrode by spin coating. A second electrode structure is subsequently formed on the layer of ferroelectric material.
摘要翻译：铁电电容器配置配置有至少两个不同的强制电压。首先产生具有形成至少两个层的表面的第一电极结构。通过旋涂在第一电极上沉积不同厚度的铁电材料层。随后在铁电材料层上形成第二电极结构。

10. 发明授权

US06500677B2 Method for fabricating a ferroelectric memory configuration 失效
标题翻译：铁电存储器配置的制造方法
公开(公告)号：US06500677B2
公开(公告)日：2002-12-31
申请号：US10027106
申请日：2001-12-26
申请人： Renate Bergmann , Christine Dehm , Thomas Roehr , Georg Braun , Heinz Hoenigschmid , Günther Schindler
发明人： Renate Bergmann , Christine Dehm , Thomas Roehr , Georg Braun , Heinz Hoenigschmid , Günther Schindler
IPC分类号： H01L2100
CPC分类号： H01L27/11502 , H01L27/11507
摘要： The invention provides a method. In a first step of a method for fabricating a ferroelectric memory configuration, there is provided a substrate having a multiplicity of memory cells. Each of the memory cells has at least one select transistor, at least one short-circuit transistor, and at least one ferroelectric capacitor. The transistors are connected in an electrically conductive manner to a first of the electrodes of the ferroelectric capacitor. In the next step, at least one electrically insulating layer is applied. In the next step, at least one contact hole for connecting a second electrode of the ferroelectric capacitors is produced. Next, contact holes for connecting the short-circuit transistors are produced. Next, the contact holes are filled with electrically conductive material. Next, an electrically conductive layer is applied and patterned, so that the second electrodes of the ferroelectric capacitors are each conductively connected to the short-circuit transistors.
摘要翻译：本发明提供了一种方法。在制造铁电存储器结构的方法的第一步骤中，提供了具有多个存储单元的衬底。每个存储单元具有至少一个选择晶体管，至少一个短路晶体管和至少一个铁电电容器。晶体管以导电方式连接到铁电电容器的第一电极。在下一步骤中，施加至少一个电绝缘层。在下一步骤中，产生用于连接铁电电容器的第二电极的至少一个接触孔。接下来，制造用于连接短路晶体管的接触孔。接下来，接触孔填充有导电材料。接下来，施加导电层并图案化，使得强电介质电容器的第二电极分别与短路晶体管导通。

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