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1. 发明申请

WO2012002994A1 SELECTIVE EPITAXY OF SI-CONTAINING MATERIALS AND SUBSTITUTIONALLY DOPED CRYSTALLINE SI-CONTAINING MATERIALS 审中-公开
标题翻译：含SI材料的选择性外延和替代掺杂的含晶体材料
公开(公告)号：WO2012002994A1
公开(公告)日：2012-01-05
申请号：PCT/US2011/001116
申请日：2011-06-23
申请人： MATHESON TRI-GAS, INC. , INTERNATIONAL BUSINESS MACHINES CORPORATION , FRANCIS, Terry, Arthur , HASAKA, Satoshi , BRABANT, Paul, David , TORRES, Robert, Jr. , HE, Hong , REZNICEK, Alexander , ADAM, Thomas, N. , SADANA, Devendra, K.
发明人： FRANCIS, Terry, Arthur , HASAKA, Satoshi , BRABANT, Paul, David , TORRES, Robert, Jr. , HE, Hong , REZNICEK, Alexander , ADAM, Thomas, N. , SADANA, Devendra, K.
IPC分类号： C30B25/02
CPC分类号： H01L21/02532 , C23C16/30 , C23C16/325 , C30B25/02 , C30B29/06 , H01L21/0237 , H01L21/02529 , H01L21/02573 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02636
摘要： The present invention discloses that under modified chemical vapor deposition (mCVD) conditions an epitaxial silicon film may be formed by exposing a substrate contained within a chamber to a relatively high carrier gas flow rate in combination with a relatively low silicon precursor flow rate at a temperature of less than about 550°C and a pressure in the range of about 10 mTorr - 200 Torr. Furthermore, the crystalline Si may be in situ doped to contain relatively high levels of substitutional carbon by carrying out the deposition at a relatively high flow rate using tetrasilane as a silicon source and a carbon-containing gas such as dodecalmethylcyclohexasilane or tetramethyldisilane under modified CVD conditions.
摘要翻译：本发明公开了在改进的化学气相沉积（mCVD）条件下，外延硅膜可以通过将包含在腔室内的衬底暴露于相对高的载气流量与在较低的硅前体流速小于约550℃，压力范围为约10mTorr-200Torr。此外，通过在改进的CVD条件下使用四硅烷作为硅源和含碳气体如十二烷基甲基环己硅烷或四甲基二硅烷以相对高的流速进行沉积，可以将晶体Si原位掺杂以含有相对高水平的取代碳。

2. 发明公开

EP2588650A1 SELECTIVE EPITAXY OF SI-CONTAINING MATERIALS AND SUBSTITUTIONALLY DOPED CRYSTALLINE SI-CONTAINING MATERIALS 审中-公开
标题翻译：选择性外延含Si材料和替代掺杂含Si的晶体材料
公开(公告)号：EP2588650A1
公开(公告)日：2013-05-08
申请号：EP11801264.0
申请日：2011-06-23
申请人： Matheson Tri-Gas, Inc. , International Business Machines Corporation
发明人： FRANCIS, Terry, Arthur , HASAKA, Satoshi , BRABANT, Paul, David , TORRES, Robert, Jr. , HE, Hong , REZNICEK, Alexander , ADAM, Thomas, N. , SADANA, Devendra, K.
IPC分类号： C30B25/02
CPC分类号： H01L21/02532 , C23C16/30 , C23C16/325 , C30B25/02 , C30B29/06 , H01L21/0237 , H01L21/02529 , H01L21/02573 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02636
摘要： The present invention discloses that under modified chemical vapor deposition (mCVD) conditions an epitaxial silicon film may be formed by exposing a substrate contained within a chamber to a relatively high carrier gas flow rate in combination with a relatively low silicon precursor flow rate at a temperature of less than about 550°C and a pressure in the range of about 10 mTorr - 200 Torr. Furthermore, the crystalline Si may be in situ doped to contain relatively high levels of substitutional carbon by carrying out the deposition at a relatively high flow rate using tetrasilane as a silicon source and a carbon-containing gas such as dodecalmethylcyclohexasilane or tetramethyldisilane under modified CVD conditions.

3. 发明申请

WO2003037484A1 MATERIALS AND METHODS FOR THE PURIFICATION OF INERT, NONREACTIVE, AND REACTIVE GASES 审中-公开
标题翻译：用于净化惰性气体，无毒气体和反应气体的材料和方法
公开(公告)号：WO2003037484A1
公开(公告)日：2003-05-08
申请号：PCT/US2002/035006
申请日：2002-10-30
申请人： MATHESON TRI-GAS, INC.
发明人： WATANABE, Tadaharu , FRAENKEL, Dan , TORRES, Robert, Jr.
IPC分类号： B01D53/02
CPC分类号： B01J20/3204 , B01D53/00 , B01D53/02 , B01J20/0218 , B01J20/0222 , B01J20/0229 , B01J20/0237 , B01J20/0251 , B01J20/0259 , B01J20/041 , B01J20/06 , B01J20/08 , B01J20/18 , B01J20/28059 , B01J20/3078 , B01J20/3236 , B01J20/3433 , B01J2220/42 , C01B3/56 , C01B23/0057 , C01B2203/042 , C01B2203/0465 , C01B2203/047 , C01B2203/0475 , C01B2203/048 , C01B2203/0485 , C01B2203/0495 , C01B2210/0031 , C01B2210/0042 , C01B2210/0045 , C01B2210/0062 , C01C1/024 , Y02C20/10
摘要： Regenerable gas purifier materials are provided capable of reducing the level of contaminants such as oxygen and water in an inert, nonreactive or reactive gas stream to parts-per-billion levels or sub-parts-per-billion levels. The purifier materials of this invention comprise a thin layer of one or more reduced forms of a metal oxide coated on the surface of a nonreactive substrate. The thin layer may further contain the completely reduced form of the metal.
摘要翻译：提供了可再生气体净化器材料，其能够将惰性，非反应性或反应性气流中的污染物，例如氧气和水的水平降低到十亿分之十或十分之一十亿的水平。本发明的净化器材料包括涂覆在非反应性基材表面上的一种或多种还原形式的金属氧化物的薄层。薄层可以进一步包含完全还原形式的金属。

4. 发明申请

WO2012002995A3 THIN FILMS AND METHODS OF MAKING THEM USING CYCLOHEXASILANE 审中-公开
公开(公告)号：WO2012002995A3
公开(公告)日：2012-01-05
申请号：PCT/US2011/001117
申请日：2011-06-23
申请人： MATHESON TRI-GAS, INC. , TORRES, Robert, Jr. , FRANCIS, Terry, Arthur , HASAKA, Satoshi , BRABANT, Paul, David
发明人： TORRES, Robert, Jr. , FRANCIS, Terry, Arthur , HASAKA, Satoshi , BRABANT, Paul, David
IPC分类号： H01L21/469
摘要： Cyclohexasilane is used in chemical vapor deposition methods to deposit epitaxial silicon-containing films over substrates. Such methods are useful in semiconductor manufacturing to provide a variety of advantages, including uniform deposition over heterogeneous surfaces, high deposition rates, and higher manufacturing productivity. Furthermore, the crystalline Si may be in situ doped to contain relatively high levels of substitutional carbon by carrying out the deposition at a relatively high flow rate using cyclohexasilane as a silicon source and a carbon-containing gas such as dodecalmethylcyclohexasilane or tetramethyldisilane under modified CVD conditions.

5. 发明申请

WO2006057748A3 FLUID PURIFICATION SYSTEM WITH LOW TEMPERATURE PURIFIER 审中-公开
公开(公告)号：WO2006057748A3
公开(公告)日：2006-06-01
申请号：PCT/US2005/038222
申请日：2005-10-19
申请人： MATHESON TRI-GAS, INC. , VININSKI, Joseph, V. , TORRES, Robert, Jr. , HOULDING, Virginia, H. , SPICER, Harold
发明人： VININSKI, Joseph, V. , TORRES, Robert, Jr. , HOULDING, Virginia, H. , SPICER, Harold
IPC分类号： B01D53/02
摘要： A system and method for processing a matrix fluid to remove one or more impurities (such as moisture from a process gas). The purifier includes a pre-cooler (110) that receives the matrix fluid and cools the matrix fluid to a second, lower temperature. A container (120) is provided to contain a purifier element made up of a high surface area material. The contains includes an inlet for receiving the matrix fluid from the pre-cooler and an outlet for outputting the matrix fluid after it is forced to flow through the purifier element.

6. 发明申请

WO2004060810A2 METHOD AND SYSTEM FOR SUPPLYING HIGH PURITY FLUID 审中-公开
标题翻译：用于提供高纯度流体的方法和系统
公开(公告)号：WO2004060810A2
公开(公告)日：2004-07-22
申请号：PCT/US2003/041017
申请日：2003-12-22
申请人： MATHESON TRI-GAS, INC.
发明人： WATANABE, Tadaharu , TORRES, Robert, Jr. , VININSKI, Joseph, V.
IPC分类号： C02F
CPC分类号： F17C9/00 , B01D53/02 , B01J4/04 , C23C16/4402 , F17C5/00 , F17C6/00 , F17C7/00 , F17C13/026 , F17C2201/0104 , F17C2201/032 , F17C2203/0617 , F17C2205/0149 , F17C2205/0314 , F17C2205/0317 , F17C2205/0323 , F17C2205/0332 , F17C2205/0335 , F17C2205/0341 , F17C2205/0391 , F17C2221/05 , F17C2250/0631 , F17C2265/012 , Y02E60/321
摘要： A fluid apparatus that includes a manifold that includes a first branch and a second branch, a first check valve coupled to the first branch of the manifold, and a purifier unit that includes a first end and a second end, wherein the first end is coupled to the second branch of the manifold. Also a fluid purifying apparatus that includes a vessel that includes a first interior compartment for containing a purifier material and a second interior compartment for containment of a fluid containing impurities, wherein the first interior compartment is separated from the second interior interior compartment by a fluid permeable support, and a rupturable seal.
摘要翻译：一种流体装置，其包括包括第一分支和第二分支的歧管，联接到所述歧管的第一分支的第一止回阀以及包括第一端和第二端的净化器单元，其中所述第一端连接到歧管的第二个分支。还有一种流体净化装置，其包括容器，该容器包括用于容纳净化剂材料的第一内部隔间和用于容纳含有杂质的流体的第二内部隔室，其中所述第一内部隔室与所述第二内部室隔开，支持和可破裂的印章。

7. 发明申请

WO2014039425A1 IN-SITU GENERATION OF THE MOLECULAR ETCHER CARBONYL FLUORIDE OR ANY OF ITS VARIANTS AND ITS USE 审中-公开
标题翻译：分子氧化碳氟化物或任何其变体及其使用的现场生成
公开(公告)号：WO2014039425A1
公开(公告)日：2014-03-13
申请号：PCT/US2013/057796
申请日：2013-09-03
申请人： MATHESON TRI-GAS, INC.
发明人： MITCHELL, Glenn , SUBRAMANIAN, Ramkumar , WYSE, Carrie, L. , TORRES, Robert, Jr.
IPC分类号： B01J4/00
CPC分类号： B01J19/087 , B01J19/081 , B01J19/088 , B01J19/123 , B01J19/125 , B01J19/126 , B01J19/127 , B01J19/128 , B01J19/129 , B01J2219/0883 , B01J2219/0892 , C01B31/00 , C01B32/00 , C01B32/80 , C23C16/4405 , H01L21/31116 , Y02C20/30 , Y02P70/605
摘要： The molecular etcher carbonyl fluoride (COF2) or any of its variants, are provided for, according to the present invention, to increase the efficiency of etching and/or cleaning and/or removal of materials such as the unwanted film and/or deposits on the chamber walls and other components in a process chamber or substrate (collectively referred to herein as "materials"). The methods of the present invention involve igniting and sustaining a plasma, whether it is a remote or in-situ plasma, by stepwise addition of additives, such as but not limited to,. a saturated, unsaturated or partially unsaturated perfluorocarbon compound (PFC) having the general formula (CyFz) and/or an oxide of carbon (COx) to a nitrogen trifluoride (NF3) plasma into a chemical deposition chamber (CVD) chamber, thereby generating COF2.
摘要翻译：根据本发明，提供分子蚀刻剂碳酰氟（COF 2）或其任何变体，以提高蚀刻和/或清洁和/或去除诸如不需要的膜和/或沉积物之类的材料的效率处理室或基板（这里统称为“材料”）中的室壁和其它部件。本发明的方法包括通过逐步添加添加剂（例如但不限于）来点燃和维持等离子体，无论其是远距离还是原位等离子体。具有通式（CyFz）的饱和，不饱和或部分不饱和全氟化碳化合物（PFC）和/或与三氟化氮（NF 3）等离子体的碳（CO x）氧化物进入化学沉积室（CVD）室，从而产生COF 2 。

8. 发明申请

WO2014039420A1 IN-SITU TCO CHAMBER CLEAN 审中-公开
标题翻译：现场TCO室清洁
公开(公告)号：WO2014039420A1
公开(公告)日：2014-03-13
申请号：PCT/US2013/057785
申请日：2013-09-03
申请人： MATHESON TRI-GAS, INC.
发明人： WYSE, Carrie, L. , MITCHELL, Glenn , TORRES, Robert, Jr. , SUBRAMANIAN, Ramkumar , SHINRIKI, Matt
IPC分类号： B08B5/00 , C23C16/448 , A61L9/20
CPC分类号： B08B7/00 , C11D11/0041 , C23C14/564 , C23C16/4405
摘要： The present invention discloses new chamber clean chemistries for low temperature, gas phase, in-situ removal of fluorine doped tin oxide (FTO) films. These new in-situ cleaning chemistries will enable solar glass and low-emissivity glass manufacturers to improve the quality of FTO films produced, as well as reduce costs associated manual cleaning of FTO deposition systems. The end result is increased production throughput and better quality FTO films. This is achieved by using gas phase, in-situ cleaning molecules, such as, but not limited to, HI, CH 3 I, and HBr, in the FTO deposition chamber to remove unwanted buildup of FTO from chamber walls and components. Significant revenue can be derived from this customer benefit through molecule and technology solution sales related to in-situ FTO TCO chamber cleaning.
摘要翻译：本发明公开了用于低温，气相，原位去除氟掺杂氧化锡（FTO）膜的新型室清洁化学品。这些新的原位清洁化学品将使太阳能玻璃和低辐射玻璃制造商能够提高生产的FTO薄膜的质量，并降低手动清洗FTO沉积系统的成本。最终的结果是提高了生产量和更好的质量FTO薄膜。这通过在FTO沉积室中使用气相，原位清洗分子，例如但不限于HI，CH 3 I和HBr来除去室壁和组分中不必要的FTO积累来实现。通过与现场FTO TCO室清洗相关的分子和技术解决方案销售，可以从此客户利益中获得重要收入。

9. 发明申请

WO2002088594A1 METHOD AND APPARATUS FOR THE DELIVERY OF LIQUEFIED GASES HAVING CONSTANT IMPURITY LEVELS 审中-公开
标题翻译：用于输送具有恒定污染水平的液化气体的方法和装置
公开(公告)号：WO2002088594A1
公开(公告)日：2002-11-07
申请号：PCT/US2002/013318
申请日：2002-04-25
申请人： MATHESON TRI-GAS, INC.
发明人： TORRES, Robert, Jr. , VININSKI, Joseph, V. , GIAGNACOVA, Joseph , YUCELEN, Belgin
IPC分类号： F17C9/02
CPC分类号： F17C9/02 , F17C2223/0153 , F17C2225/0123 , F17C2225/0153 , F17C2227/0302 , F17C2265/05 , F17C2270/0518
摘要： A method and an apparatus are provided for the delivery of a vapor phase product having a substantially constant impurity level from a liquefied source of said gas to an endpoint. The delivery method includes withdrawing a liquefied gas having a level of impurties from a storage container (10) and delivering the liquefied gas to a vaporization unit (18) where the liquefied gas and the impurities dissolved therein are completely vaporized. The vapor phase product is then delivered to an endpoint. This invention affords the delivery of gases with substantially constant impurity levels throughout the delivery of the liquefied gas. In addition, this invention affords the delivery of the liquefied gas at high vapor phase flow rates for long periods of time and allows substantially complete usage of the contents of the storage container (10).
摘要翻译：提供了一种方法和装置，用于将具有基本上恒定的杂质水平的气相产物从所述气体的液化源输送到端点。输送方法包括从储存容器（10）中取出具有污染程度的液化气体，并将液化气体输送到汽化单元（18），其中液化气体和其中溶解的杂质完全蒸发。然后将气相产物递送至终点。本发明提供了在整个液化气体输送过程中具有基本上恒定的杂质水平的气体输送。此外，本发明提供长时间高气相流速下的液化气体的输送，并且允许基本上完全使用储存容器（10）的内容物。

10. 发明公开

EP2589071A2 THIN FILMS AND METHODS OF MAKING THEM USING CYCLOHEXASILANE 审中-公开
标题翻译：薄膜和工艺，用于使用环己
公开(公告)号：EP2589071A2
公开(公告)日：2013-05-08
申请号：EP11801265.7
申请日：2011-06-23
申请人： Matheson Tri-Gas, Inc.
发明人： TORRES, Robert, Jr. , FRANCIS, Terry, Arthur , HASAKA, Satoshi , BRABANT, Paul, David
IPC分类号： H01L21/469
CPC分类号： H01L21/02529 , C23C16/24 , C30B25/02 , C30B29/06 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： Cyclohexasilane is used in chemical vapor deposition methods to deposit epitaxial silicon-containing films over substrates. Such methods are useful in semiconductor manufacturing to provide a variety of advantages, including uniform deposition over heterogeneous surfaces, high deposition rates, and higher manufacturing productivity. Furthermore, the crystalline Si may be
in situ doped to contain relatively high levels of substitutional carbon by carrying out the deposition at a relatively high flow rate using cyclohexasilane as a silicon source and a carbon-containing gas such as dodecalmethylcyclohexasilane or tetramethyldisilane under modified CVD conditions.

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