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1. 发明申请

WO2014039425A1 IN-SITU GENERATION OF THE MOLECULAR ETCHER CARBONYL FLUORIDE OR ANY OF ITS VARIANTS AND ITS USE 审中-公开
标题翻译：分子氧化碳氟化物或任何其变体及其使用的现场生成
公开(公告)号：WO2014039425A1
公开(公告)日：2014-03-13
申请号：PCT/US2013/057796
申请日：2013-09-03
申请人： MATHESON TRI-GAS, INC.
发明人： MITCHELL, Glenn , SUBRAMANIAN, Ramkumar , WYSE, Carrie, L. , TORRES, Robert, Jr.
IPC分类号： B01J4/00
CPC分类号： B01J19/087 , B01J19/081 , B01J19/088 , B01J19/123 , B01J19/125 , B01J19/126 , B01J19/127 , B01J19/128 , B01J19/129 , B01J2219/0883 , B01J2219/0892 , C01B31/00 , C01B32/00 , C01B32/80 , C23C16/4405 , H01L21/31116 , Y02C20/30 , Y02P70/605
摘要： The molecular etcher carbonyl fluoride (COF2) or any of its variants, are provided for, according to the present invention, to increase the efficiency of etching and/or cleaning and/or removal of materials such as the unwanted film and/or deposits on the chamber walls and other components in a process chamber or substrate (collectively referred to herein as "materials"). The methods of the present invention involve igniting and sustaining a plasma, whether it is a remote or in-situ plasma, by stepwise addition of additives, such as but not limited to,. a saturated, unsaturated or partially unsaturated perfluorocarbon compound (PFC) having the general formula (CyFz) and/or an oxide of carbon (COx) to a nitrogen trifluoride (NF3) plasma into a chemical deposition chamber (CVD) chamber, thereby generating COF2.
摘要翻译：根据本发明，提供分子蚀刻剂碳酰氟（COF 2）或其任何变体，以提高蚀刻和/或清洁和/或去除诸如不需要的膜和/或沉积物之类的材料的效率处理室或基板（这里统称为“材料”）中的室壁和其它部件。本发明的方法包括通过逐步添加添加剂（例如但不限于）来点燃和维持等离子体，无论其是远距离还是原位等离子体。具有通式（CyFz）的饱和，不饱和或部分不饱和全氟化碳化合物（PFC）和/或与三氟化氮（NF 3）等离子体的碳（CO x）氧化物进入化学沉积室（CVD）室，从而产生COF 2 。

2. 发明申请

WO2014039420A1 IN-SITU TCO CHAMBER CLEAN 审中-公开
标题翻译：现场TCO室清洁
公开(公告)号：WO2014039420A1
公开(公告)日：2014-03-13
申请号：PCT/US2013/057785
申请日：2013-09-03
申请人： MATHESON TRI-GAS, INC.
发明人： WYSE, Carrie, L. , MITCHELL, Glenn , TORRES, Robert, Jr. , SUBRAMANIAN, Ramkumar , SHINRIKI, Matt
IPC分类号： B08B5/00 , C23C16/448 , A61L9/20
CPC分类号： B08B7/00 , C11D11/0041 , C23C14/564 , C23C16/4405
摘要： The present invention discloses new chamber clean chemistries for low temperature, gas phase, in-situ removal of fluorine doped tin oxide (FTO) films. These new in-situ cleaning chemistries will enable solar glass and low-emissivity glass manufacturers to improve the quality of FTO films produced, as well as reduce costs associated manual cleaning of FTO deposition systems. The end result is increased production throughput and better quality FTO films. This is achieved by using gas phase, in-situ cleaning molecules, such as, but not limited to, HI, CH 3 I, and HBr, in the FTO deposition chamber to remove unwanted buildup of FTO from chamber walls and components. Significant revenue can be derived from this customer benefit through molecule and technology solution sales related to in-situ FTO TCO chamber cleaning.
摘要翻译：本发明公开了用于低温，气相，原位去除氟掺杂氧化锡（FTO）膜的新型室清洁化学品。这些新的原位清洁化学品将使太阳能玻璃和低辐射玻璃制造商能够提高生产的FTO薄膜的质量，并降低手动清洗FTO沉积系统的成本。最终的结果是提高了生产量和更好的质量FTO薄膜。这通过在FTO沉积室中使用气相，原位清洗分子，例如但不限于HI，CH 3 I和HBr来除去室壁和组分中不必要的FTO积累来实现。通过与现场FTO TCO室清洗相关的分子和技术解决方案销售，可以从此客户利益中获得重要收入。

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