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1. 发明授权

US06810941B2 Injection mold for semi-solidified Fe alloy 有权
标题翻译：半固态Fe合金注塑模具
公开(公告)号：US06810941B2
公开(公告)日：2004-11-02
申请号：US10158580
申请日：2002-05-30
申请人： Masayuki Tsuchiya , Hiroaki Ueno , Isamu Takagi , Naokuni Muramatsu , Masato Yasuda
发明人： Masayuki Tsuchiya , Hiroaki Ueno , Isamu Takagi , Naokuni Muramatsu , Masato Yasuda
IPC分类号： B22C300
CPC分类号： B22D17/2209 , B22D17/007
摘要： An injection mold for casting a semi-solidified Fe alloy includes a scalping gate for eliminating surface oxide film of a semi-solidified Fe alloy injected into the mold cavity from a pressure chamber. The scalping gate is arranged between the pressure chamber and a runner that is in communication with the mold cavity. The mold halves and the scalping gate are each formed of a copper alloy having a thermal conductivity of not less than 120 W/(m·K) and a hardness of not less than 180 HB. The mold halves and the scalping gate each have a cermet layer consisting essentially of at least one member selected from a group consisting of Co, Cu, Cr and Ni. The cermet layer is formed by electro-spark deposition, via an intermediate layer of Ni alloy, which is also formed by electro-spark deposition.
摘要翻译：用于铸造半固化Fe合金的注射模具包括用于消除从压力室注入到模腔中的半固化Fe合金的表面氧化膜的刮刀。烫平门布置在压力室和与模腔连通的转轮之间。半模和烫金闸门均由热导率不低于120W /（m.K），硬度不低于180HB的铜合金形成。模具半部和剥皮门各自具有金属陶瓷层，金属陶瓷层基本上由选自Co，Cu，Cr和Ni中的至少一种构成。金属陶瓷层通过电火花沉积，通过也由电火花沉积形成的Ni合金中间层形成。

2. 发明授权

US06863744B2 Iron based alloy material for thixocasting process and method for casting the same 有权
标题翻译：用于触变过程的铁基合金材料及其铸造方法
公开(公告)号：US06863744B2
公开(公告)日：2005-03-08
申请号：US10235855
申请日：2002-09-06
申请人： Masayuki Tsuchiya , Hiroaki Ueno
发明人： Masayuki Tsuchiya , Hiroaki Ueno
IPC分类号： B22D18/02 , B22D17/00 , C22C1/00 , C22C33/08 , C22C37/06 , C22C37/10 , C22C38/00 , C22C38/02 , C22C38/36 , C22C38/34
CPC分类号： C22C33/08 , B22D17/007 , C22C1/005 , C22C37/06 , C22C37/10
摘要： An iron based alloy material for a thixocasting process and a method for casting the material which extends the service life of dies by inhibiting solidification contraction, and in which casting defects such as size variations and cracks can be inhibited. The material comprises 1.6 wt %≦C≦2.5 wt % and 3.0 wt %
摘要翻译：用于触变过程的铁基合金材料和通过抑制凝固收缩延长模具使用寿命的铸造材料的方法，并且其中可以抑制诸如尺寸变化和裂纹的铸造缺陷。该材料包含1.6重量％<= C <= 2.5重量％和3.0重量％

3. 发明授权

US06616777B1 Fe alloy material for thixocasting and method for heating the same 有权
标题翻译： Fe合金材料用于触媒和加热它的方法
公开(公告)号：US06616777B1
公开(公告)日：2003-09-09
申请号：US09508458
申请日：2000-03-10
申请人： Masayuki Tsuchiya , Hiroaki Ueno
发明人： Masayuki Tsuchiya , Hiroaki Ueno
IPC分类号： C22C3700
CPC分类号： C21D6/008 , B22D17/007 , C21D6/00 , C22C37/10 , C22C38/02 , C22C38/04 , C22C38/08
摘要： A thixocast Fe-based alloy material is provided, from which a cast product having mechanical properties uniform over the whole thereof can be produced. The Fe-based alloy material comprises 1.8% by weight≦C≦2.5% by weight, 1.0% by weight≦Si≦3.0% by weight, 0.1% by weight≦Mn≦1.5% by weight, 0.5% by weight≦Ni≦3.0% by weight, and as the balance, iron (Fe) including inevitable impurities. The eutectic crystal amount Ec is in a range of 10% by weight
摘要翻译：提供了一种触变Fe基合金材料，由此可以生产出具有整体机械性能均匀的铸造产品.Fe基合金材料包含1.8重量％<= C <2.5重量％，1.0 重量百分比<= Si <= 3.0％重量，0.1％（重量）<= Mn <= 1.5％（重量），0.5％（重量）

4. 发明授权

US06923246B2 Billet, horizontal continuous casting process, and thixocasting process 失效
标题翻译：坯料，水平连续铸造工艺和触媒工艺
公开(公告)号：US06923246B2
公开(公告)日：2005-08-02
申请号：US10401044
申请日：2003-03-28
申请人： Masayuki Tsuchiya , Hiroaki Ueno , Yasushi Fujinaga , Chiaki Ushigome , Susumu Nishikawa
发明人： Masayuki Tsuchiya , Hiroaki Ueno , Yasushi Fujinaga , Chiaki Ushigome , Susumu Nishikawa
IPC分类号： B22D11/00 , B22D11/14 , B22D17/00
CPC分类号： B22D11/143 , B22D11/00 , B22D17/007
摘要： A billet for a thixocasting process and a thixocasting process using the billet allows casting using a thixocasting process to be realized at low production cost without permeation of an oxide film to the inside of the billet in injection molding. In a billet used for a thixocasting process continuously cast by intermittently drawing out, the interval of the oscillation marks is 10 mm or less and the maximum tilt angle of the oscillation marks relative to a cross section which is at a right angle to the drawing out direction is 45° or less.
摘要翻译：用于触变工艺的坯料和使用该坯料的触变工艺允许使用触媒工艺进行铸造，以低生产成本实现，而不会在注射成型中将氧化膜渗透到坯料的内部。在用于通过间歇抽出连续铸造的触媒处理的坯料中，振动标记的间隔为10mm以下，振动标记相对于与拉拔成直角的截面的最大倾斜角方向为45°以下。

5. 发明申请

US20070012415A1 Cast-iron thixocasting apparatus and method 审中-公开
标题翻译：铸铁触媒装置及方法
公开(公告)号：US20070012415A1
公开(公告)日：2007-01-18
申请号：US10569511
申请日：2004-08-24
申请人： Masayuki Tsuchiya , Hiroaki Ueno , Chiaki Ushigome , Toshiro Maekawa , Syuichi Shikai
发明人： Masayuki Tsuchiya , Hiroaki Ueno , Chiaki Ushigome , Toshiro Maekawa , Syuichi Shikai
IPC分类号： B22D17/10
CPC分类号： B22C9/06 , B22D17/007
摘要： Disclosed is an apparatus for and a method of thixocasting a cast iron, that can effectively prevent the scale from mixing in the die (cavity) thereby to obtain sound iron castings having good mechanical properties. The apparatus includes at least a pair of dies that can freely opened and closed to define a cavity to be filled under a pressure, and an injector that injects the semi-molten iron into the cavity through a hole in a gate at the entry of the cavity so as to throttle the entry. The gate is a separate member disposed at the entry of the cavity every time an injection casting operation is carried out and is taken out together with the casting after the injection casting operation.
摘要翻译：本发明公开了一种能够有效地防止鳞片在模具（空腔）中混合从而获得具有良好机械性能的铁铸件的铸铁镶嵌装置和方法。该装置包括至少一对可以自由地打开和关闭以限定要在压力下填充的空腔的模具;以及喷射器，其通过门中的孔将半熔融铁注入空腔中以便节流入口。闸门是每次执行注射操作时设置在空腔入口处的单独构件，并且在注射铸造操作之后与铸件一起取出。

6. 发明申请

US20140152267A1 BATTERY SYSTEMS AND REMAINING CAPACITY MANAGEMENT SYSTEMS FOR SECONDARY BATTERY 有权
标题翻译：电池系统和二次电池剩余容量管理系统
公开(公告)号：US20140152267A1
公开(公告)日：2014-06-05
申请号：US14131571
申请日：2012-06-07
申请人： Yoichi Hashimoto , Hiroaki Ueno
发明人： Yoichi Hashimoto , Hiroaki Ueno
IPC分类号： H02J7/00
CPC分类号： H02J7/0029 , H01M10/48 , H01M2010/4271 , H01M2010/4278 , H01M2200/00 , H02J7/0047 , H02J2007/005
摘要： A battery system according to the present invention includes a secondary battery; a battery control unit that controls charging and discharging of said secondary battery; and a charging/discharging management unit that controls the charging and discharging of said secondary battery through said battery control unit, wherein said battery control unit, if an abnormality occurred during operation of said battery control unit, transmits remaining capacity data that represent a remaining capacity of said secondary battery that remained immediately before the abnormality occurred to said charging/discharging management unit.
摘要翻译：根据本发明的电池系统包括二次电池; 电池控制单元，其控制所述二次电池的充电和放电; 以及充电/放电管理单元，其通过所述电池控制单元控制所述二次电池的充电和放电，其中所述电池控制单元如果在所述电池控制单元的操作期间发生异常，则发送表示剩余容量的剩余容量数据的所述二次电池在所述充电/放电管理单元发生异常之前立即停止。

7. 发明授权

US07656010B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07656010B2
公开(公告)日：2010-02-02
申请号：US11898958
申请日：2007-09-18
申请人： Tomohiro Murata , Hiroaki Ueno , Hidetoshi Ishida , Tetsuzo Ueda , Yasuhiro Uemoto , Tsuyoshi Tanaka , Daisuke Ueda
发明人： Tomohiro Murata , Hiroaki Ueno , Hidetoshi Ishida , Tetsuzo Ueda , Yasuhiro Uemoto , Tsuyoshi Tanaka , Daisuke Ueda
IPC分类号： H01L23/58
CPC分类号： H01L29/7787 , H01L23/367 , H01L23/3677 , H01L29/2003 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes: a semiconductor layer; at least one electrode formed on a semiconductor layer to be in contact with the semiconductor layer; and a passivation film covering the semiconductor layer and at least part of the top surface of the electrode to protect the semiconductor layer and formed of a plurality of sub-films. The passivation film includes a first sub-film made of aluminum nitride.
摘要翻译：半导体器件包括：半导体层; 形成在与半导体层接触的半导体层上的至少一个电极; 以及覆盖半导体层和电极的顶表面的至少一部分的钝化膜，以保护半导体层并由多个子膜形成。钝化膜包括由氮化铝制成的第一子膜。

8. 发明申请

US20080130868A1 Scrambler and storage device using the same 审中-公开
标题翻译：扰码器和使用相同的存储设备
公开(公告)号：US20080130868A1
公开(公告)日：2008-06-05
申请号：US11897476
申请日：2007-08-30
申请人： Hiroaki Ueno
发明人： Hiroaki Ueno
IPC分类号： H04K1/00
CPC分类号： H04L1/00 , H04L25/4906
摘要： A scrambler that facilitates encryption of data to be recorded and a magnetic storage device using this are provided. The scrambler has a shift register of a plurality of stages and an exclusive OR circuit that finds the exclusive OR of the logic of the stages of the shift register that correspond to a single generating polynomial. The output of the exclusive OR circuit is arranged to be fed back to the initial stage of the shift register. At least this single generating polynomial is an arbitrary generating polynomial. The drive number, in binary form, that identifies the storage device, is set as the initial value of the shift register of a plurality of stages.
摘要翻译：提供了促进要记录的数据的加密的扰码器和使用该数据的磁存储装置。加扰器具有多级的移位寄存器和异或电路，该异或电路找到与单个生成多项式相对应的移位寄存器的级的逻辑的异或。异或电路的输出被布置为反馈到移位寄存器的初始阶段。至少该单个生成多项式是任意生成多项式。以二进制形式识别存储设备的驱动器号被设置为多级的移位寄存器的初始值。

9. 发明申请

US20070170463A1 Nitride semiconductor device 有权
标题翻译：氮化物半导体器件
公开(公告)号：US20070170463A1
公开(公告)日：2007-07-26
申请号：US11647218
申请日：2006-12-29
申请人： Hiroaki Ueno , Manabu Yanagihara , Tetsuzo Ueda , Yasuhiro Uemoto , Tsuyoshi Tanaka , Daisuke Ueda
发明人： Hiroaki Ueno , Manabu Yanagihara , Tetsuzo Ueda , Yasuhiro Uemoto , Tsuyoshi Tanaka , Daisuke Ueda
IPC分类号： H01L31/00
CPC分类号： H01L29/7783 , H01L21/02381 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L29/1066 , H01L29/2003 , H01L29/4175 , H01L29/432 , H01L29/452 , H01L29/7787
摘要： A nitride semiconductor device includes: a first semiconductor layer made of first nitride semiconductor; a second semiconductor layer formed on a principal surface of the first semiconductor layer and made of second nitride semiconductor having a bandgap wider than that of the first nitride semiconductor; a control layer selectively formed on, or above, an upper portion of the second semiconductor layer and made of third nitride semiconductor having a p-type conductivity; source and drain electrodes formed on the second semiconductor layer at respective sides of the control layer; a gate electrode formed on the control layer; and a fourth semiconductor layer formed on a surface of the first semiconductor layer opposite to the principal surface, having a potential barrier in a valence band with respect to the first nitride semiconductor and made of fourth nitride semiconductor containing aluminum.
摘要翻译：氮化物半导体器件包括：由第一氮化物半导体制成的第一半导体层; 第二半导体层，其形成在第一半导体层的主表面上并且由具有比第一氮化物半导体的带隙宽的第二氮化物半导体构成; 选择性地形成在所述第二半导体层的上部并且由上述第二半导体层的上部制成的具有p型导电性的第三氮化物半导体的控制层; 源极和漏极，形成在控制层的相应侧上的第二半导体层上; 形成在所述控制层上的栅电极; 以及形成在与所述主表面相对的所述第一半导体层的表面上的第四半导体层，所述第四半导体层相对于所述第一氮化物半导体具有价带中的势垒，并且由包含铝的第四氮化物半导体制成。

10. 发明申请

US20070126026A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20070126026A1
公开(公告)日：2007-06-07
申请号：US11593016
申请日：2006-11-06
申请人： Hiroaki Ueno , Manabu Yanagihara , Yasuhiro Uemoto , Tsuyoshi Tanaka
发明人： Hiroaki Ueno , Manabu Yanagihara , Yasuhiro Uemoto , Tsuyoshi Tanaka
IPC分类号： H01L31/00
CPC分类号： H01L29/7787 , H01L23/3732 , H01L29/2003 , H01L29/66462 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes: a first group-III nitride semiconductor layer formed on a substrate; a second group-III nitride semiconductor layer made of a single layer or two or more layers, formed on the first group-III nitride semiconductor layer, and acting as a barrier layer; a source electrode, a drain electrode, and a gate electrode formed on the second group-III nitride semiconductor layer, the gate electrode controlling a current flowing between the source and drain electrodes; and a heat radiation film with high thermal conductivity which covers, as a surface passivation film, the entire surface other than a bonding pad.
摘要翻译：半导体器件包括：形成在衬底上的第一III族氮化物半导体层; 形成在第一III族氮化物半导体层上并且用作阻挡层的由单层或两层或更多层制成的第二III族氮化物半导体层; 形成在所述第二III族氮化物半导体层上的源电极，漏电极和栅极，所述栅电极控制在所述源极和漏极之间流动的电流; 以及具有高导热性的热辐射膜，其覆盖除了焊盘之外的整个表面作为表面钝化膜。

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