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1. 发明授权

US06068769A Aqueous dispersion slurry of inorganic particles and production methods thereof 有权
标题翻译：无机颗粒的水分散体浆料及其制备方法
公开(公告)号：US06068769A
公开(公告)日：2000-05-30
申请号：US135840
申请日：1998-08-18
申请人： Akira Iio , Masayuki Hattori , Masayuki Motonari
发明人： Akira Iio , Masayuki Hattori , Masayuki Motonari
IPC分类号： B01F3/12 , B01F7/00 , B01F7/30 , B24B37/04 , B24B57/02 , C09D17/00 , C09K3/14 , B01D24/00 , B01D37/00 , B03B1/00 , C04B33/00
CPC分类号： B24B37/04 , B01F3/1221 , B01F3/1271 , B01F7/30 , B24B57/02 , C09D17/004 , C09K3/1463 , B01F2215/0031 , B01F2215/005 , B01F7/00991
摘要： The present invention provides aqueous dispersion slurry of inorganic particles which is so stable as not to increase in viscosity, gel or sediment even if stored for a long time and therefore can be used as raw materials for, for example, cosmetics, paint, coating materials and lapping slurry for semiconductor wafers, and production method of such aqueous dispersion slurry. The aqueous dispersion slurry according to the present invention has the number of particles whose a particle diameter of 1.3 .mu.m or more is 180,000 or less per mL in terms of 30 wt % in concentration, and the average particle diameter thereof is in a range of 0.05-0.9 .mu.m. The number of particles having aparticle diameter of 1.3 .mu.m or more is counted by using Particle Sensor KS-60, which is a light extinction type sensor for detecting particles, and Particle Counter KL-11, which is a particle counter, both of which made by the same manufacturer, Rion Electro Corp. The average particle diameter is measured by using Laser Particle Analyzer System Par-III made by Otsuka Denshi Co., Ltd.
摘要翻译：本发明提供无机颗粒的水性分散体浆料，其即使长时间贮存也非常稳定，不会增加粘度，凝胶或沉淀物，因此可用作例如化妆品，油漆，涂料的原料和研磨用于半导体晶片的浆料，以及这种水分散浆料的制造方法。本发明的水性分散体浆料的粒径为1.3μm以上的粒子数为30,000重量％以下，其浓度为30重量％，平均粒径为 0.05-0.9亩。通过使用作为用于检测粒子的消光型传感器的粒子传感器KS-60和作为粒子计数器的粒子计数器KL-11，对具有1.3μm以上的粒径的粒子的数量进行计数由同一制造商Rion Electro Corp.制造。平均粒径通过使用由Otsuka Denshi Co.，Ltd制造的激光粒子分析仪系统Par-III来测量。

2. 发明授权

US06565767B2 Polymer particles and polishing material containing them 有权
标题翻译：聚合物颗粒和含有它们的抛光材料
公开(公告)号：US06565767B2
公开(公告)日：2003-05-20
申请号：US09897129
申请日：2001-07-03
申请人： Masayuki Hattori , Masayuki Motonari , Akira Iio
发明人： Masayuki Hattori , Masayuki Motonari , Akira Iio
IPC分类号： C09K1300
CPC分类号： C09K3/1463 , C09G1/02 , C09K3/1436
摘要： The polymer particles of the invention are characterized by being obtained by polycondensation of at least one from among Compound 1 represented by general formula (1), its hydrolysates and its partial condensates, and at least one from among Compound 2 represented by general formula (2), its hydrolysates and its partial condensates, and by having a mean particle size of 3-1000 nm. M(OR1)z (1) (R2)nM(OR3)z-n (2) where M is Al, Si, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ge, Zr, Nb, Mo, Sn, Sb, Ta, W, Pb or Ce; z is the atomic valence of M; R1 and R3 are each an alkyl group of 1-5 carbon atoms, an acyl group of 1-6 carbon atoms or an aryl group of 1-9 carbon atoms; R2 is a monovalent organic group of 1-8 carbon atoms; n is an integer of from 1 to (z−2); and R1, R2 and R3 may be the same or different. These particles are used in polishing compositions used for chemical mechanical polishing.
摘要翻译：本发明的聚合物颗粒的特征在于通过由通式（1）表示的化合物1，其水解产物和其部分缩合物中的至少一种和通式（2）表示的化合物2中的至少一种缩合得到），其水解物及其部分缩合物，平均粒径为3-1000nm。其中，M为Al，Si，Ti，V，Cr，Mn，Fe，Co，Ni，Cu，Zn，Ge，Zr ，Nb，Mo，Sn，Sb，Ta，W，Pb或Ce; z是M的原子价; R1和R3分别是1-5个碳原子的烷基，1-6个碳原子的酰基或1-9个碳原子的芳基; R2是1-8个碳原子的一价有机基团; n为1〜（z-2）的整数。并且R 1，R 2和R 3可以相同或不同。这些颗粒用于用于化学机械抛光的抛光组合物中。

3. 发明授权

US06454819B1 Composite particles and production process thereof, aqueous dispersion, aqueous dispersion composition for chemical mechanical polishing, and process for manufacture of semiconductor device 有权
标题翻译：复合粒子及其制造方法，水分散体，化学机械抛光用水性分散体组合物，半导体装置的制造方法
公开(公告)号：US06454819B1
公开(公告)日：2002-09-24
申请号：US09484064
申请日：2000-01-18
申请人： Hiroyuki Yano , Gaku Minamihaba , Yukiteru Matsui , Katsuya Okumura , Masayuki Motonari , Masayuki Hattori , Akira Iio
发明人： Hiroyuki Yano , Gaku Minamihaba , Yukiteru Matsui , Katsuya Okumura , Masayuki Motonari , Masayuki Hattori , Akira Iio
IPC分类号： C09K314
CPC分类号： C09K3/1463 , C08G83/001 , C08J3/128 , C08K3/36 , C08K5/057 , C08K2201/013 , C09G1/02 , C09K3/1436 , H01L21/02024 , H01L21/31053 , H01L21/3212
摘要： A process for chemical mechanical polishing of a working film on a wafer, which entails conducting the chemical mechanical polishing with an aqueous dispersion containing water and composite particles, the composite particles containing polymer particles having at least one of a silicon compound portion or section and a metal compound portion or section formed directly or indirectly on the polymer particles.
摘要翻译：一种用于化学机械抛光晶片上的工作薄膜的方法，该方法需要用含水和复合颗粒的水性分散体进行化学机械抛光，所述复合颗粒含有具有硅化合物部分或部分和在聚合物颗粒上直接或间接形成的金属化合物部分或部分。

4. 发明授权

US06375545B1 Chemical mechanical method of polishing wafer surfaces 有权
标题翻译：抛光晶圆表面的化学机械方法
公开(公告)号：US06375545B1
公开(公告)日：2002-04-23
申请号：US09484252
申请日：2000-01-18
申请人： Hiroyuki Yano , Gaku Minamihaba , Yukiteru Matsui , Nobuo Hayasaka , Katsuya Okumura , Akira Iio , Masayuki Hattori , Masayuki Motonari
发明人： Hiroyuki Yano , Gaku Minamihaba , Yukiteru Matsui , Nobuo Hayasaka , Katsuya Okumura , Akira Iio , Masayuki Hattori , Masayuki Motonari
IPC分类号： B24B100
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1463 , H01L21/31053 , Y10S977/775 , Y10S977/888
摘要： It is an object of the present invention to provide an aqueous dispersion and CMP slurry that can achieve polishing at an adequate rate without producing scratches in the polishing surfaces of wafer working films, and a polishing process for wafer surfaces and a process for manufacture of a semiconductor device using them. A CMP slurry and the like of the present invention contains polymer particles with a crosslinked structure and a mean particle size of 0.13-0.8 &mgr;m. The CMP slurry may contain no surfactant, and may contain the surfactant of not greater than 0.15 wt %. A CMP slurry and the like of another present invention contains polymer particles and inorganic particles of silica, aluminum and the like. A mean particle size of the polymer particles may be not greater than a mean particle size of the inorganic particles. And the mean particle size of the inorganic coagulated particles may be 0.1-1.0 &mgr;m, and may be smaller than the mean particle size of the polymer particles. The CMP slurry is used as a polishing agent and a working film of a silicon oxide film, an aluminum film, a tungsten film or a copper film formed on a wafer is polished. And a semiconductor device is manufactured by using the CMP slurry.
摘要翻译：本发明的目的是提供一种水分散体和CMP浆料，其可以以足够的速率实现抛光，而不会在晶片工作薄膜的抛光表面中产生划痕，以及用于晶片表面的抛光工艺和制造半导体器件使用它们。本发明的CMP浆料等含有交联结构，平均粒径为0.13〜0.8μm的聚合物粒子。 CMP浆料可以不含表面活性剂，并且可以含有不大于0.15重量％的表面活性剂。另一个本发明的CMP浆料等含有聚合物颗粒和二氧化硅，铝等的无机颗粒。聚合物颗粒的平均粒径可以不大于无机颗粒的平均粒度。无机凝结粒子的平均粒径可以为0.1〜1.0μm，并且可以小于聚合物粒子的平均粒径。将CMP浆料用作抛光剂，并且研磨在晶片上形成的氧化硅膜，铝膜，钨膜或铜膜的工作膜。并且通过使用CMP浆料制造半导体器件。

5. 发明授权

US07153369B2 Method of chemical mechanical polishing 有权
公开(公告)号：US07153369B2
公开(公告)日：2006-12-26
申请号：US10200504
申请日：2002-07-23
申请人： Masayuki Motonari , Masayuki Hattori , Nobuo Kawahashi
发明人： Masayuki Motonari , Masayuki Hattori , Nobuo Kawahashi
IPC分类号： C23G1/14 , C09G1/02 , C09K3/14 , H01L21/321
CPC分类号： C09K3/1463 , C09G1/02 , H01L21/3212 , Y10S134/902
摘要： It is an object of the invention to provide an aqueous dispersion for CMP that produces no scratches on polishing surfaces and that polishes with an adequate rate, when used for polishing of copper and the like. The aqueous dispersion of the invention contains water and polymer particles composed of a polymer with a specific functional group, and it may also contain a complexing agent, a compound that forms a passivation film on polishing surfaces and/or an oxidizing agent. The specific functional group is a functional group that can react with the metals of polishing surfaces or that can form a cation, and it is preferably selected from among amino, pyridyl and acrylamide groups. The polymer can be obtained using a initiator and/or monomer possessing the specific functional group. The polymer may also have a crosslinked structure.

6. 发明授权

US07087530B2 Aqueous dispersion for chemical mechanical polishing 有权
标题翻译：化学机械抛光用水分散体
公开(公告)号：US07087530B2
公开(公告)日：2006-08-08
申请号：US10689680
申请日：2003-10-22
申请人： Masayuki Motonari , Masayuki Hattori , Nobuo Kawahashi
发明人： Masayuki Motonari , Masayuki Hattori , Nobuo Kawahashi
IPC分类号： H01L21/302
CPC分类号： C09G1/02 , C09K3/1463 , H01L21/31053
摘要： The invention provides an aqueous dispersion for chemical mechanical polishing that can limit scratches of a specific size to a specific number, even with interlayer insulating films with small elastic moduli (silsesquioxane, fluorine-containing SiO2, polyimide-based resins, and the like.). When using the aqueous dispersion for chemical mechanical polishing of an interlayer insulating film with an elastic modulus of no greater than 20 GPa as measured by the nanoindentation method, the number of scratches with a maximum length of 1 μm or greater is an average of no more than 5 per unit area of 0.01 mm2 of the polishing surface. An aqueous dispersion for CMP or an aqueous dispersion for interlayer insulating film CMP according to another aspect of the invention contains a scratch inhibitor agent and an abrasive. The scratch inhibitor may be biphenol, bipyridyl, 2-vinylpyridine, salicylaldoxime, o-phenylenediamine, catechol, 7-hydroxy-5-methyl-1,3,4-triazaindolizine, and the like. The abrasive may consist of inorganic particles, organic particles or organic/inorganic composite particles. The organic/inorganic composite particles may be formed by polycondensation of an alkoxysilane, aluminum alkoxide, titanium alkoxide, and the like in the presence of polymer particles of polystyrene or the like, and bonding of polysiloxane, and the like, on at least the surface of the polymer particles.
摘要翻译：本发明提供了一种用于化学机械抛光的水分散体，即使使用具有小弹性模量的层间绝缘膜（倍半硅氧烷，含氟SiO 2，聚酰亚胺 - 基树脂等）。当通过纳米压痕法测量的弹性模量不大于20GPa的层间绝缘膜的化学机械抛光使用水性分散体时，最大长度为1μm或更大的划痕数是不超过平均值比抛光表面的0.01mm 2单位面积的5个。根据本发明另一方面，用于CMP的水分散体或用于层间绝缘膜CMP的水性分散体含有防刮剂和研磨剂。刮擦抑制剂可以是联苯酚，联吡啶基，2-乙烯基吡啶，水杨醛肟，邻苯二胺，邻苯二酚，7-羟基-5-甲基-1,3,4-三氮杂多卡因等。研磨剂可以由无机颗粒，有机颗粒或有机/无机复合颗粒组成。有机/无机复合颗粒可以通过在聚苯乙烯等的聚合物颗粒的存在下的烷氧基硅烷，烷氧基铝，烷氧基钛等的缩聚以及聚硅氧烷等的至少表面的聚合物颗粒。

7. 发明授权

US06447695B1 Aqueous dispersion composition for chemical mechanical polishing for use in manufacture of semiconductor devices 有权
标题翻译：用于制造半导体器件的化学机械抛光用水性分散体组合物
公开(公告)号：US06447695B1
公开(公告)日：2002-09-10
申请号：US09655305
申请日：2000-09-05
申请人： Masayuki Motonari , Masayuki Hattori , Nobuo Kawahashi
发明人： Masayuki Motonari , Masayuki Hattori , Nobuo Kawahashi
IPC分类号： C09K1300
CPC分类号： C09G1/02 , H01L21/3212
摘要： The present invention provides an aqueous dispersion composition for chemical mechanical polishing which is useful for the manufacture of semiconductor devices, and which for polishing of different types of working films and barrier metal layers formed on semiconductor substrates, can achieve efficient polishing particularly of barrier metal surfaces and can give adequately flattened and high precision finished surfaces. The aqueous dispersion composition for chemical mechanical polishing has properties such that, when polishing a copper film, a tantalum layer and/or tantalum nitride layer a and an insulating film under the same conditions, the ratio (RCu/RTa) between the polishing rate of the copper film (RCu) and the polishing rate of the tantalum layer and/or tantalum nitride layer (RTa) is no greater than 1/20, and the ratio (RCu/RIn) between the polishing rate of the copper film (RCu) and the polishing rate of the insulating film (RIn) is from 5 to ⅕. RCu/RTa is preferably no greater than {fraction (1/30)}, especially no greater than {fraction (1/40)} and most preferably no greater than {fraction (1/50)}, while RCu/RIn is preferably 4¼, especially 3⅓ and more preferably 2½.
摘要翻译：本发明提供了一种用于化学机械抛光的水性分散组合物，其用于制造半导体器件，并且用于抛光形成在半导体衬底上的不同类型的工作膜和阻挡金属层，可以实现特别是阻挡金属表面的高效抛光并可以给予适当扁平和高精度的成品表面。用于化学机械抛光的水性分散组合物具有这样的特性，即在相同条件下对铜膜，钽层和/或氮化钽层a和绝缘膜进行研磨时，抛光速率之间的比（RCu / RTa）铜膜（RCu）和钽层和/或氮化钽层（RTa）的研磨速度不大于1/20，铜膜（RCu）的研磨速度之比（RCu / RIn）绝缘膜（RIn）的研磨速度为5〜 RCu / R a优选不大于{分数（1/30）}，特别是不大于{分数（1/40）}，最优选不大于{分数（1/50）}，而RCu / RIn优选 4¼，特别是3 1/3，更优选为2½。

8. 发明授权

US07183211B2 Process for chemical mechanical polishing of semiconductor substrate and aqueous dispersion for chemical mechanical polishing 有权
标题翻译：用于化学机械抛光的半导体衬底的化学机械抛光和水性分散体的方法
公开(公告)号：US07183211B2
公开(公告)日：2007-02-27
申请号：US10349092
申请日：2003-01-23
申请人： Tomohisa Konno , Masayuki Motonari , Masayuki Hattori , Nobuo Kawahashi
发明人： Tomohisa Konno , Masayuki Motonari , Masayuki Hattori , Nobuo Kawahashi
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： C09G1/02 , H01L21/3212
摘要： The object of the present invention is to provide a process for chemical mechanical polishing of semiconductor substrate that is particularly useful for chemical mechanical polishing a wafer having a wiring pattern and an insulating layer having a low dielectric constant is formed between wiring patterns, interlayers in the case of a multi-layer wiring and the like in the process of producing a semiconductor device, and an aqueous dispersion for chemical mechanical polishing which is used in this process. The process for chemical mechanical polishing of a semiconductor substrate of the present invention is that a surface to be polished of the semiconductor substrate is polished under conditions of a rotation speed of a polishing table fixing a polishing pad at the range from 50 to 200 rpm and a pressing pressure of the semiconductor substrate fixed to a polishing head against a polishing pad at the range from 700 to 18,000 Pa, by using an aqueous dispersion for chemical mechanical polishing comprising an abrasive and at least one compound selected from the group consisting of polycarboxylic acid having a heterocycle and anhydride thereof, and the polishing pad.
摘要翻译：本发明的目的是提供一种半导体衬底的化学机械抛光方法，该方法特别适用于化学机械抛光，具有布线图案的晶片和具有低介电常数的绝缘层形成在布线图案，中间层在制造半导体器件的过程中的多层布线等的情况以及用于该工艺的化学机械抛光用水性分散体。本发明的半导体基板的化学机械研磨方法是在将抛光垫固定在50〜200rpm的范围内的研磨台的旋转速度的条件下对半导体基板的被研磨面进行研磨，通过使用包含研磨剂和至少一种选自多元羧酸的化合物的化合物机械抛光用水性分散体，将固定在研磨头上的研磨头的半导体衬底的压力压在700至18,000Pa的范围内具有杂环和酸酐，以及抛光垫。

9. 发明授权

US06832949B2 Window member for chemical mechanical polishing and polishing pad 有权
标题翻译：化学机械抛光和抛光垫窗构件
公开(公告)号：US06832949B2
公开(公告)日：2004-12-21
申请号：US10279843
申请日：2002-10-25
申请人： Tomohisa Konno , Masayuki Motonari , Masayuki Hattori , Kou Hasegawa , Nobuo Kawahashi
发明人： Tomohisa Konno , Masayuki Motonari , Masayuki Hattori , Kou Hasegawa , Nobuo Kawahashi
IPC分类号： B24B500
CPC分类号： B24B37/205
摘要： An object of the present invention is to provide a window member for chemical mechanical polishing, which is excellent in antifouling property and transparency and is excellent in anti-scratching and, further, can easily perform detection of a polishing endpoint of the surface of a semiconductor wafer by passing a light for endpoint detection, in polishing of a semiconductor wafer using an optical endpoint detecting apparatus and also to a polishing pad. A window member for chemical mechanical polishing of the present invention is provided with a substrate part (comprised of polyurethane resin and the like), which is transparent partly at least, an antifouling resin layer formed on at least one side of the substrate part. This antifouling resin layer is preferably comprised of a fluorine-based polymer having a polysiloxane segment in a main chain. A polishing pad may be the one that a window member is fitted in a through hole of a substrate for a polishing pad (comprised of polyurethane resin and the like, disc-like, belt-like or the like) provided with a through hole penetrating from surface to back, or adhered to a substrate for a polishing pad so as to cover an opening part of the through hole.
摘要翻译：本发明的目的是提供一种化学机械抛光用的窗构件，其防污性和透明性优异，抗划伤性优异，并且还可以容易地进行半导体表面的研磨终点的检测使用光学终点检测装置对抛光用的半导体晶片进行端点检测的光，也可以使用抛光垫。本发明的化学机械抛光用窗构件具有至少部分透明地形成在基板部的至少一侧上的防污树脂层的基板部（由聚氨酯树脂等构成）。该防污树脂层优选由在主链中具有聚硅氧烷链段的氟系聚合物构成。抛光垫可以是窗构件装配在用于抛光垫（由聚氨酯树脂等构成的盘状，带状等）的通孔的通孔中，该基板设置有贯通孔或者粘附到用于抛光垫的基板上，以覆盖通孔的开口部分。

10. 发明授权

US06579153B2 Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing process 有权
标题翻译：化学机械抛光和化学机械抛光工艺的水分散体
公开(公告)号：US06579153B2
公开(公告)日：2003-06-17
申请号：US09756193
申请日：2001-01-09
申请人： Kazuhito Uchikura , Masayuki Motonari , Masayuki Hattori , Nobuo Kawahashi
发明人： Kazuhito Uchikura , Masayuki Motonari , Masayuki Hattori , Nobuo Kawahashi
IPC分类号： H01L21283
CPC分类号： C23F3/04 , C09G1/02 , H01L21/3212
摘要： There are provided aqueous dispersions for CMP that can efficiently polish both copper films and barrier metal films, which can give sufficient flattened finished surfaces without excessive polishing of insulating films, as well as a CMP process employing the aqueous dispersions. The aqueous dispersions for CMP according to the invention are characterized in that for polishing of a copper film, barrier metal film and insulating film under the same conditions, the polishing rate ratio (RCu/RBM) of the copper film (RCu) and the barrier metal film (RBM) is such that 0.5≦RCu/RBM≦2, and the polishing rate ratio (RCu/RIn) of the copper film (RCu) and the insulating film (RIn) is such that 0.5≦RCu/RIn≦2. Other aqueous dispersions for CMP according to the invention are characterized in that they contain an abrasive, a heterocyclic compound, an organic acid and an oxidizing agent, and for polishing of a copper film, barrier metal film and insulating film under the same conditions, the polishing rate ratio (RCu/RBM) of the copper film (RCu) and the barrier metal film (RBM) is such that 0
摘要翻译：提供了用于CMP的水性分散体，其可以有效地抛光铜膜和阻挡金属膜，这可以提供足够的平整的成品表面而不过度抛光绝缘膜，以及使用水分散体的CMP方法。根据本发明的CMP水分散体的特征在于，在相同条件下对铜膜，阻挡金属膜和绝缘膜进行抛光，铜膜（RCu）和屏障（RCu）的抛光速率比（RCu / RBM）金属膜（RBM）使得0.5 <= RCu / RBM <= 2，铜膜（RCu）和绝缘膜（RIn）的研磨速度比（RCu / RIn）使得0.5 <= RCu / RIn <= 2。根据本发明的CMP的其它水分散体的特征在于它们含有研磨剂，杂环化合物，有机酸和氧化剂，并且在相同条件下用于抛光铜膜，阻挡金属膜和绝缘膜，铜膜（RCu）和阻挡金属膜（RBM）的研磨速度比（RCu / RBM）为0

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