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1. 发明授权

US06454819B1 Composite particles and production process thereof, aqueous dispersion, aqueous dispersion composition for chemical mechanical polishing, and process for manufacture of semiconductor device 有权
标题翻译：复合粒子及其制造方法，水分散体，化学机械抛光用水性分散体组合物，半导体装置的制造方法
公开(公告)号：US06454819B1
公开(公告)日：2002-09-24
申请号：US09484064
申请日：2000-01-18
申请人： Hiroyuki Yano , Gaku Minamihaba , Yukiteru Matsui , Katsuya Okumura , Masayuki Motonari , Masayuki Hattori , Akira Iio
发明人： Hiroyuki Yano , Gaku Minamihaba , Yukiteru Matsui , Katsuya Okumura , Masayuki Motonari , Masayuki Hattori , Akira Iio
IPC分类号： C09K314
CPC分类号： C09K3/1463 , C08G83/001 , C08J3/128 , C08K3/36 , C08K5/057 , C08K2201/013 , C09G1/02 , C09K3/1436 , H01L21/02024 , H01L21/31053 , H01L21/3212
摘要： A process for chemical mechanical polishing of a working film on a wafer, which entails conducting the chemical mechanical polishing with an aqueous dispersion containing water and composite particles, the composite particles containing polymer particles having at least one of a silicon compound portion or section and a metal compound portion or section formed directly or indirectly on the polymer particles.
摘要翻译：一种用于化学机械抛光晶片上的工作薄膜的方法，该方法需要用含水和复合颗粒的水性分散体进行化学机械抛光，所述复合颗粒含有具有硅化合物部分或部分和在聚合物颗粒上直接或间接形成的金属化合物部分或部分。

2. 发明授权

US06375545B1 Chemical mechanical method of polishing wafer surfaces 有权
标题翻译：抛光晶圆表面的化学机械方法
公开(公告)号：US06375545B1
公开(公告)日：2002-04-23
申请号：US09484252
申请日：2000-01-18
申请人： Hiroyuki Yano , Gaku Minamihaba , Yukiteru Matsui , Nobuo Hayasaka , Katsuya Okumura , Akira Iio , Masayuki Hattori , Masayuki Motonari
发明人： Hiroyuki Yano , Gaku Minamihaba , Yukiteru Matsui , Nobuo Hayasaka , Katsuya Okumura , Akira Iio , Masayuki Hattori , Masayuki Motonari
IPC分类号： B24B100
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1463 , H01L21/31053 , Y10S977/775 , Y10S977/888
摘要： It is an object of the present invention to provide an aqueous dispersion and CMP slurry that can achieve polishing at an adequate rate without producing scratches in the polishing surfaces of wafer working films, and a polishing process for wafer surfaces and a process for manufacture of a semiconductor device using them. A CMP slurry and the like of the present invention contains polymer particles with a crosslinked structure and a mean particle size of 0.13-0.8 &mgr;m. The CMP slurry may contain no surfactant, and may contain the surfactant of not greater than 0.15 wt %. A CMP slurry and the like of another present invention contains polymer particles and inorganic particles of silica, aluminum and the like. A mean particle size of the polymer particles may be not greater than a mean particle size of the inorganic particles. And the mean particle size of the inorganic coagulated particles may be 0.1-1.0 &mgr;m, and may be smaller than the mean particle size of the polymer particles. The CMP slurry is used as a polishing agent and a working film of a silicon oxide film, an aluminum film, a tungsten film or a copper film formed on a wafer is polished. And a semiconductor device is manufactured by using the CMP slurry.
摘要翻译：本发明的目的是提供一种水分散体和CMP浆料，其可以以足够的速率实现抛光，而不会在晶片工作薄膜的抛光表面中产生划痕，以及用于晶片表面的抛光工艺和制造半导体器件使用它们。本发明的CMP浆料等含有交联结构，平均粒径为0.13〜0.8μm的聚合物粒子。 CMP浆料可以不含表面活性剂，并且可以含有不大于0.15重量％的表面活性剂。另一个本发明的CMP浆料等含有聚合物颗粒和二氧化硅，铝等的无机颗粒。聚合物颗粒的平均粒径可以不大于无机颗粒的平均粒度。无机凝结粒子的平均粒径可以为0.1〜1.0μm，并且可以小于聚合物粒子的平均粒径。将CMP浆料用作抛光剂，并且研磨在晶片上形成的氧化硅膜，铝膜，钨膜或铜膜的工作膜。并且通过使用CMP浆料制造半导体器件。

3. 发明授权

US06740590B1 AQUEOUS DISPERSION, AQUEOUS DISPERSION FOR CHEMICAL MECHANICAL POLISHING USED FOR MANUFACTURE OF SEMICONDUCTOR DEVICES, METHOD FOR MANUFACTURE OF SEMICONDUCTOR DEVICES, AND METHOD FOR FORMATION OF EMBEDDED WRITING 有权
标题翻译：用于制造半导体器件的化学机械抛光的水性分散体，用于制造半导体器件的方法和用于形成嵌入式布线的方法
公开(公告)号：US06740590B1
公开(公告)日：2004-05-25
申请号：US09531163
申请日：2000-03-17
申请人： Hiroyuki Yano , Gaku Minamihaba , Yukiteru Matsui , Katsuya Okumura , Akira Iio , Masayuki Hattori
发明人： Hiroyuki Yano , Gaku Minamihaba , Yukiteru Matsui , Katsuya Okumura , Akira Iio , Masayuki Hattori
IPC分类号： H01L21302
CPC分类号： C09K3/1463 , C09G1/02 , C09K3/1436 , H01L21/02074 , H01L21/3212 , H01L21/7684
摘要： The object of the present invention is to provide an aqueous dispersion that can give the required properties for a wide range of uses including electronic materials, magnetic materials, optical materials and polishing materials, and to provide an aqueous dispersion for chemical mechanical polishing (CMP slurry) that gives an adequate polishing rate without creating scratches in polishing surfaces. Another object of the present invention is, to provide a method for manufacture of semiconductor devices using a CMP slurry that can control progressive erosion due to scratches and the like during polishing and that can achieve efficient flattening of working films, and to provide a method for formation of embedded wiring. The aqueous dispersion or CMP slurry of the present invention contains polymer particles made of thermoplastic resins or the like, and inorganic particles made of alumina, silica or the like, wherein the zeta potentials of the polymer particles and inorganic particles are of opposite signs, and they are bonded by electrostatic force to form aggregates as composite particles. The aggregates are subjected to ultrasonic wave irradiation or shear stress with a homogenizer to give more uniformly dispersed composite particles.
摘要翻译：本发明的目的是提供一种水性分散体，其可以为包括电子材料，磁性材料，光学材料和抛光材料在内的广泛用途提供所需的性能，并提供用于化学机械抛光的水性分散体（CMP浆料），其提供足够的抛光速率，而不会在抛光表面中产生划痕。本发明的另一个目的是提供一种使用CMP浆料制造半导体器件的方法，所述CMP浆料可以在抛光期间控制由划痕等引起的逐渐侵蚀，并且可以实现工作膜的有效平坦化，并提供一种方法形成嵌入式布线。本发明的水性分散体或CMP浆料含有由热塑性树脂等构成的聚合物颗粒和由氧化铝，二氧化硅等制成的无机颗粒，其中聚合物颗粒和无机颗粒的ζ电位具有相反的标志，它们通过静电力结合以形成作为复合颗粒的聚集体。聚集体用均化器进行超声波照射或剪切应力，得到更均匀分散的复合颗粒。

4. 发明授权

US06935928B2 Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method 有权
标题翻译：化学机械抛光水性分散体和化学机械抛光方法
公开(公告)号：US06935928B2
公开(公告)日：2005-08-30
申请号：US10882362
申请日：2004-07-02
申请人： Kazuhito Uchikura , Kazuo Nishimoto , Masayuki Hattori , Nobuo Kawahashi , Hiroyuki Yano , Yukiteru Matsui , Gaku Minamihaba , Dai Fukushima , Nobuyuki Kurashima
发明人： Kazuhito Uchikura , Kazuo Nishimoto , Masayuki Hattori , Nobuo Kawahashi , Hiroyuki Yano , Yukiteru Matsui , Gaku Minamihaba , Dai Fukushima , Nobuyuki Kurashima
IPC分类号： C09G1/02 , C09K3/14 , H01L21/02 , H01L21/321 , H01L21/302 , H01L21/461
CPC分类号： H01L21/02074 , C09G1/02 , C09K3/1463 , H01L21/3212
摘要： A chemical mechanical polishing aqueous dispersion comprises a component (A) composed of abrasive grains, a component (B) composed of at least one of quinolinecarboxylic acid and pyridinecarboxylic acid, a component (C) composed of an organic acid other than quinolinecarboxylic acid and pyridinecarboxylic acid and a component (D) composed of an oxidizing agent, wherein a mass ratio (WB/WC) of the content (WB) of the component (B) to the content (WC) of the component (C) is not less than 0.01 and less than 2, and the concentration of an ammonia component composed of ammonia and ammonium ion is not more than 0.005 mol/litter. According to the chemical mechanical polishing aqueous dispersion, various layers to be processed can be polished with high efficiency, and a sufficiently planarized polished surface of high precision can be obtained.
摘要翻译：化学机械研磨用水系分散体包含由磨粒构成的成分（A），由喹啉羧酸和吡啶羧酸中的至少一种构成的成分（B），由喹啉羧酸以外的有机酸构成的成分（C），吡啶羧酸酸和由氧化剂组成的组分（D），其中组分（B）的含量（WB）与组分（C）的含量（WC）的质量比（WB / WC）不小于 0.01和小于2，由氨和铵离子组成的氨组分的浓度不大于0.005mol / l。根据化学机械研磨水分散体，能够高效率地研磨各种被处理层，能够得到高精度的平坦化的抛光面。

5. 发明申请

US20050037693A1 Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method 有权
公开(公告)号：US20050037693A1
公开(公告)日：2005-02-17
申请号：US10882362
申请日：2004-07-02
申请人： Kazuhito Uchikura , Kazuo Nishimoto , Masayuki Hattori , Nobuo Kawahashi , Hiroyuki Yano , Yukiteru Matsui , Gaku Minamihaba , Dai Fukushima , Nobuyuki Kurashima
发明人： Kazuhito Uchikura , Kazuo Nishimoto , Masayuki Hattori , Nobuo Kawahashi , Hiroyuki Yano , Yukiteru Matsui , Gaku Minamihaba , Dai Fukushima , Nobuyuki Kurashima
IPC分类号： C09G1/02 , C09K3/14 , H01L21/02 , H01L21/321 , B24B1/00
CPC分类号： H01L21/02074 , C09G1/02 , C09K3/1463 , H01L21/3212
摘要： A chemical mechanical polishing aqueous dispersion comprises a component (A) composed of abrasive grains, a component (B) composed of at least one of quinolinecarboxylic acid and pyridinecarboxylic acid, a component (C) composed of an organic acid other than quinolinecarboxylic acid and pyridinecarboxylic acid and a component (D) composed of an oxidizing agent, wherein a mass ratio (WB/WC) of the content (WB) of the component (B) to the content (WC) of the component (C) is not less than 0.01 and less than 2, and the concentration of an ammonia component composed of ammonia and ammonium ion is not more than 0.005 mol/litter. According to the chemical mechanical polishing aqueous dispersion, various layers to be processed can be polished with high efficiency, and a sufficiently planarized polished surface of high precision can be obtained.

6. 发明授权

US06653267B2 Aqueous dispersion for chemical mechanical polishing used for polishing of copper 有权
公开(公告)号：US06653267B2
公开(公告)日：2003-11-25
申请号：US09893961
申请日：2001-06-29
申请人： Hiroyuki Yano , Gaku Minamihaba , Masayuki Motonari , Masayuki Hattori , Nobuo Kawahashi
发明人： Hiroyuki Yano , Gaku Minamihaba , Masayuki Motonari , Masayuki Hattori , Nobuo Kawahashi
IPC分类号： C11D328
CPC分类号： C09G1/02 , C09K3/1463 , C23F3/04 , H01L21/3212
摘要： The present invention provides an aqueous dispersion for chemical mechanical polishing suitable for polishing of copper, which has a high polishing speed and a low erosion rate with overpolishing. The aqueous dispersion for chemical mechanical polishing of the invention contains a compound having a heterocycle, a surfactant and an oxidizing agent, wherein the compound having a heterocycle and the surfactant are in a weight ratio of 1:10 to 1:0.03. The aqueous dispersion may also contain abrasive particle. The compound having a heterocycle is preferably quinaldic acid, benzotriazole or the like. The surfactant is preferably a sulfonic acid salt such as potassium dodecylbenzenesulfonate or ammonium dodecylbenzenesulfonate, and the oxidizing agent is preferably ammonium persulfate, hydrogen peroxide or the like. The abrasive particle used may be inorganic particle such as colloidal silica, an organic particle such as polymer particle, or an organic/inorganic composite particle comprising a combination thereof.

7. 发明授权

US06409780B1 Water-laden solid matter of vapor-phase processed inorganic oxide particles and slurry for polishing and manufacturing method of semiconductor devices 有权
标题翻译：气相处理无机氧化物颗粒的含水固体物质和用于半导体器件的抛光和制造方法的浆料
公开(公告)号：US06409780B1
公开(公告)日：2002-06-25
申请号：US09482937
申请日：2000-01-14
申请人： Hiroyuki Yano , Nobuo Hayasaka , Katsuya Okumura , Akira Iio , Masayuki Hattori , Kiyonobu Kubota
发明人： Hiroyuki Yano , Nobuo Hayasaka , Katsuya Okumura , Akira Iio , Masayuki Hattori , Kiyonobu Kubota
IPC分类号： C09K314
CPC分类号： C09G1/02 , C09K3/1463
摘要： Water-laden solid matter is provided which is obtained by adding 40 to 300 weight parts of water to 100 weight parts of inorganic oxide particles synthesized by fumed process or metal evaporation oxidation process, slurry for polishing is provided which is manufactured by using the water-laden solid matter, and a method for manufacturing a semiconductor device using the above slurry. Said water-laden solid matter is within a range of 0.3 to 3 g/cm3 in bulk density and within a range of 0.5 to 100 mm&phgr; in average particle size when manufactured granular. Said slurry for polishing is manufactured from the water-laden solid matter, and the average particle size thereof after being dispersed in water is within a range of 0.05 to 1.0 &mgr;m.
摘要翻译：提供含水固体物质，其通过向通过热解法或金属蒸发氧化法合成的100重量份的无机氧化物颗粒中加入40至300重量份的水而获得，提供了通过使用水 - 负载固体物质，以及使用上述浆料制造半导体器件的方法。所述含水固体物质的体积密度为0.3〜3g / cm 3，制粒时的平均粒径为0.5〜100mmφ的范围。用于抛光的所述浆料由含水固体物质制成，其在分散在水中的平均粒径在0.05-1.0μm的范围内。

8. 发明申请

US20070049180A1 Aqueous dispersion for chemical mechanical polishing, kit for preparing the aqueous dispersion, chemical mechanical polishing process, and process for producing semiconductor devices 审中-公开
标题翻译：用于化学机械抛光的水分散体，用于制备水性分散体的试剂盒，化学机械抛光工艺以及用于制备半导体器件的方法
公开(公告)号：US20070049180A1
公开(公告)日：2007-03-01
申请号：US11508893
申请日：2006-08-24
申请人： Hirotaka Shida , Akihiro Takemura , Masayuki Hattori , Gaku Minamihaba , Dai Fukushima , Nobuyuki Kurashima , Susumu Yamamoto , Yoshikuni Tateyama , Hiroyuki Yano
发明人： Hirotaka Shida , Akihiro Takemura , Masayuki Hattori , Gaku Minamihaba , Dai Fukushima , Nobuyuki Kurashima , Susumu Yamamoto , Yoshikuni Tateyama , Hiroyuki Yano
IPC分类号： B24B7/30
CPC分类号： C09G1/02 , B24B37/044 , H01L21/3212 , H01L21/76835 , H01L21/7684
摘要： An aqueous dispersion for chemical mechanical polishing contains water, a polyvinylpyrrolidone having a weight-average molecular weight exceeding 200,000, an oxidant, a protective film-forming agent and abrasive grains, the protective film-forming agent containing a first metal compound-forming agent which forms a water-insoluble metal compound, and a second metal compound-forming agent which forms a water-soluble metal compound. The aqueous dispersion is capable of uniformly and stably polishing a metal film at low friction without causing defects in a metal film and an insulating film.
摘要翻译：用于化学机械抛光的水性分散体含有水，重均分子量超过200,000的聚乙烯吡咯烷酮，氧化剂，保护性成膜剂和磨料颗粒，所述保护性成膜剂含有第一金属化合物形成剂，所述第一金属化合物形成剂形成水不溶性金属化合物和形成水溶性金属化合物的第二金属化合物形成剂。水分散体能够以低摩擦力均匀且稳定地抛光金属膜，而不会在金属膜和绝缘膜中产生缺陷。

9. 发明授权

US06924227B2 Slurry for chemical mechanical polishing and method of manufacturing semiconductor device 有权
标题翻译：用于化学机械抛光的浆料和半导体器件的制造方法
公开(公告)号：US06924227B2
公开(公告)日：2005-08-02
申请号：US09932943
申请日：2001-08-21
申请人： Gaku Minamihaba , Hiroyuki Yano , Nobuyuki Kurashima , Nobuo Kawahashi , Masayuki Hattori , Kazuo Nishimoto
发明人： Gaku Minamihaba , Hiroyuki Yano , Nobuyuki Kurashima , Nobuo Kawahashi , Masayuki Hattori , Kazuo Nishimoto
IPC分类号： H01L21/304 , C09G1/02 , C09K3/14 , H01L21/4763
CPC分类号： C09G1/02 , C09K3/1463
摘要： A method of manufacturing a semiconductor device uses a slurry for chemical polishing during the manufacturing process, the slurry containing polishing particles comprising colloidal particles whose primary particles have a diameter ranging from 5 to 30 nm, wherein the degree of association of the primary particles is 5 or less. This slurry for chemical mechanical polishing makes it possible to minimize erosion and scratching whenever a conductive material film is subjected to CMP treatment.
摘要翻译：制造半导体装置的方法在制造工序中使用用于化学抛光的浆料，所述浆料含有包含一次粒径为5〜30nm的胶体粒子的研磨粒子，其中，一次粒子的缔合度为5 或更少。这种用于化学机械抛光的浆料使得每当对导电材料膜进行CMP处理时，可以最小化侵蚀和刮擦。

10. 发明授权

US06068769A Aqueous dispersion slurry of inorganic particles and production methods thereof 有权
标题翻译：无机颗粒的水分散体浆料及其制备方法
公开(公告)号：US06068769A
公开(公告)日：2000-05-30
申请号：US135840
申请日：1998-08-18
申请人： Akira Iio , Masayuki Hattori , Masayuki Motonari
发明人： Akira Iio , Masayuki Hattori , Masayuki Motonari
IPC分类号： B01F3/12 , B01F7/00 , B01F7/30 , B24B37/04 , B24B57/02 , C09D17/00 , C09K3/14 , B01D24/00 , B01D37/00 , B03B1/00 , C04B33/00
CPC分类号： B24B37/04 , B01F3/1221 , B01F3/1271 , B01F7/30 , B24B57/02 , C09D17/004 , C09K3/1463 , B01F2215/0031 , B01F2215/005 , B01F7/00991
摘要： The present invention provides aqueous dispersion slurry of inorganic particles which is so stable as not to increase in viscosity, gel or sediment even if stored for a long time and therefore can be used as raw materials for, for example, cosmetics, paint, coating materials and lapping slurry for semiconductor wafers, and production method of such aqueous dispersion slurry. The aqueous dispersion slurry according to the present invention has the number of particles whose a particle diameter of 1.3 .mu.m or more is 180,000 or less per mL in terms of 30 wt % in concentration, and the average particle diameter thereof is in a range of 0.05-0.9 .mu.m. The number of particles having aparticle diameter of 1.3 .mu.m or more is counted by using Particle Sensor KS-60, which is a light extinction type sensor for detecting particles, and Particle Counter KL-11, which is a particle counter, both of which made by the same manufacturer, Rion Electro Corp. The average particle diameter is measured by using Laser Particle Analyzer System Par-III made by Otsuka Denshi Co., Ltd.
摘要翻译：本发明提供无机颗粒的水性分散体浆料，其即使长时间贮存也非常稳定，不会增加粘度，凝胶或沉淀物，因此可用作例如化妆品，油漆，涂料的原料和研磨用于半导体晶片的浆料，以及这种水分散浆料的制造方法。本发明的水性分散体浆料的粒径为1.3μm以上的粒子数为30,000重量％以下，其浓度为30重量％，平均粒径为 0.05-0.9亩。通过使用作为用于检测粒子的消光型传感器的粒子传感器KS-60和作为粒子计数器的粒子计数器KL-11，对具有1.3μm以上的粒径的粒子的数量进行计数由同一制造商Rion Electro Corp.制造。平均粒径通过使用由Otsuka Denshi Co.，Ltd制造的激光粒子分析仪系统Par-III来测量。

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