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1. 发明授权

US06579153B2 Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing process 有权
标题翻译：化学机械抛光和化学机械抛光工艺的水分散体
公开(公告)号：US06579153B2
公开(公告)日：2003-06-17
申请号：US09756193
申请日：2001-01-09
申请人： Kazuhito Uchikura , Masayuki Motonari , Masayuki Hattori , Nobuo Kawahashi
发明人： Kazuhito Uchikura , Masayuki Motonari , Masayuki Hattori , Nobuo Kawahashi
IPC分类号： H01L21283
CPC分类号： C23F3/04 , C09G1/02 , H01L21/3212
摘要： There are provided aqueous dispersions for CMP that can efficiently polish both copper films and barrier metal films, which can give sufficient flattened finished surfaces without excessive polishing of insulating films, as well as a CMP process employing the aqueous dispersions. The aqueous dispersions for CMP according to the invention are characterized in that for polishing of a copper film, barrier metal film and insulating film under the same conditions, the polishing rate ratio (RCu/RBM) of the copper film (RCu) and the barrier metal film (RBM) is such that 0.5≦RCu/RBM≦2, and the polishing rate ratio (RCu/RIn) of the copper film (RCu) and the insulating film (RIn) is such that 0.5≦RCu/RIn≦2. Other aqueous dispersions for CMP according to the invention are characterized in that they contain an abrasive, a heterocyclic compound, an organic acid and an oxidizing agent, and for polishing of a copper film, barrier metal film and insulating film under the same conditions, the polishing rate ratio (RCu/RBM) of the copper film (RCu) and the barrier metal film (RBM) is such that 0
摘要翻译：提供了用于CMP的水性分散体，其可以有效地抛光铜膜和阻挡金属膜，这可以提供足够的平整的成品表面而不过度抛光绝缘膜，以及使用水分散体的CMP方法。根据本发明的CMP水分散体的特征在于，在相同条件下对铜膜，阻挡金属膜和绝缘膜进行抛光，铜膜（RCu）和屏障（RCu）的抛光速率比（RCu / RBM）金属膜（RBM）使得0.5 <= RCu / RBM <= 2，铜膜（RCu）和绝缘膜（RIn）的研磨速度比（RCu / RIn）使得0.5 <= RCu / RIn <= 2。根据本发明的CMP的其它水分散体的特征在于它们含有研磨剂，杂环化合物，有机酸和氧化剂，并且在相同条件下用于抛光铜膜，阻挡金属膜和绝缘膜，铜膜（RCu）和阻挡金属膜（RBM）的研磨速度比（RCu / RBM）为0

2. 发明授权

US06935928B2 Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method 有权
标题翻译：化学机械抛光水性分散体和化学机械抛光方法
公开(公告)号：US06935928B2
公开(公告)日：2005-08-30
申请号：US10882362
申请日：2004-07-02
申请人： Kazuhito Uchikura , Kazuo Nishimoto , Masayuki Hattori , Nobuo Kawahashi , Hiroyuki Yano , Yukiteru Matsui , Gaku Minamihaba , Dai Fukushima , Nobuyuki Kurashima
发明人： Kazuhito Uchikura , Kazuo Nishimoto , Masayuki Hattori , Nobuo Kawahashi , Hiroyuki Yano , Yukiteru Matsui , Gaku Minamihaba , Dai Fukushima , Nobuyuki Kurashima
IPC分类号： C09G1/02 , C09K3/14 , H01L21/02 , H01L21/321 , H01L21/302 , H01L21/461
CPC分类号： H01L21/02074 , C09G1/02 , C09K3/1463 , H01L21/3212
摘要： A chemical mechanical polishing aqueous dispersion comprises a component (A) composed of abrasive grains, a component (B) composed of at least one of quinolinecarboxylic acid and pyridinecarboxylic acid, a component (C) composed of an organic acid other than quinolinecarboxylic acid and pyridinecarboxylic acid and a component (D) composed of an oxidizing agent, wherein a mass ratio (WB/WC) of the content (WB) of the component (B) to the content (WC) of the component (C) is not less than 0.01 and less than 2, and the concentration of an ammonia component composed of ammonia and ammonium ion is not more than 0.005 mol/litter. According to the chemical mechanical polishing aqueous dispersion, various layers to be processed can be polished with high efficiency, and a sufficiently planarized polished surface of high precision can be obtained.
摘要翻译：化学机械研磨用水系分散体包含由磨粒构成的成分（A），由喹啉羧酸和吡啶羧酸中的至少一种构成的成分（B），由喹啉羧酸以外的有机酸构成的成分（C），吡啶羧酸酸和由氧化剂组成的组分（D），其中组分（B）的含量（WB）与组分（C）的含量（WC）的质量比（WB / WC）不小于 0.01和小于2，由氨和铵离子组成的氨组分的浓度不大于0.005mol / l。根据化学机械研磨水分散体，能够高效率地研磨各种被处理层，能够得到高精度的平坦化的抛光面。

3. 发明申请

US20060276041A1 Chemical mechanical polishing aqueous dispersion, chemical mechanical polishing method, and kit for preparing chemical mechanical polishing aqueous dispersion 审中-公开
标题翻译：化学机械抛光水性分散体，化学机械抛光方法和制备化学机械抛光水性分散体的试剂盒
公开(公告)号：US20060276041A1
公开(公告)日：2006-12-07
申请号：US11433508
申请日：2006-05-15
申请人： Kazuhito Uchikura , Tomohisa Konno , Nobuo Kawahashi , Masayuki Hattori
发明人： Kazuhito Uchikura , Tomohisa Konno , Nobuo Kawahashi , Masayuki Hattori
IPC分类号： C09K13/00 , H01L21/461 , C03C15/00 , H01L21/302
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1463
摘要： A chemical mechanical polishing aqueous dispersion, including: (A) inorganic particles; (B) at least one type of particles selected from the group consisting of organic particles and organic-inorganic composite particles; (C) at least one compound selected from the group consisting of quinolinecarboxylic acid, quinolinic acid, a divalent organic acid (excluding quinolinic acid), and a hydroxyl acid; (D) at least one compound selected from the group consisting of benzotriazole and benzotriazole derivatives; (E) an oxidizing agent; and (F) water, the chemical mechanical polishing aqueous dispersion containing the component (A) in an amount of 0.05 to 2.0 wt % and the component (B) in an amount of 0.005 to 1.5 wt %, having a ratio (WA/WB) of the amount (WA) of the component (A) to the amount (WB) of the component (B) of 0.1 to 200, and having a pH of 1.0 to 5.0.
摘要翻译：化学机械抛光水分散体，包括：（A）无机颗粒; （B）选自有机颗粒和有机 - 无机复合颗粒的至少一种类型的颗粒; （C）至少一种选自喹啉羧酸，喹啉酸，二价有机酸（不包括喹啉酸）和羟基酸的化合物; （D）至少一种选自苯并三唑和苯并三唑衍生物的化合物; （E）氧化剂; 和（F）水，含有0.05〜2.0重量％的成分（A）的化学机械研磨用水系分散体和0.005〜1.5重量％的成分（B），其比例（W

4. 发明申请

US20060201914A1 Chemical mechanical polishing aqueous dispersion, chemical mechanical polishing method, and kit for preparing chemical mechanical polishing aqueous dispersion 审中-公开
标题翻译：化学机械抛光水性分散体，化学机械抛光方法和制备化学机械抛光水性分散体的试剂盒
公开(公告)号：US20060201914A1
公开(公告)日：2006-09-14
申请号：US11369870
申请日：2006-03-08
申请人： Kazuhito Uchikura , Masayuki Hattori , Nobuo Kawahashi
发明人： Kazuhito Uchikura , Masayuki Hattori , Nobuo Kawahashi
IPC分类号： C09K13/00 , C03C15/00 , B44C1/22
CPC分类号： H01L21/3212 , C09G1/02
摘要： A chemical mechanical polishing aqueous dispersion, including: (A) abrasives; (B) an organic acid; (C) benzotriazole or a benzotriazole derivative; (D) a poly(meth)acrylate; (E) an oxidizing agent; and (F) water, the abrasives (A) being included in the chemical mechanical polishing aqueous dispersion in an amount of 2 to 10 wt %.
摘要翻译：化学机械抛光水性分散体，包括：（A）研磨剂; （B）有机酸; （C）苯并三唑或苯并三唑衍生物; （D）聚（甲基）丙烯酸酯; （E）氧化剂; 和（F）水，研磨剂（A）以2〜10重量％的量包含在化学机械研磨用水系分散体中。

5. 发明申请

US20050037693A1 Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method 有权
公开(公告)号：US20050037693A1
公开(公告)日：2005-02-17
申请号：US10882362
申请日：2004-07-02
申请人： Kazuhito Uchikura , Kazuo Nishimoto , Masayuki Hattori , Nobuo Kawahashi , Hiroyuki Yano , Yukiteru Matsui , Gaku Minamihaba , Dai Fukushima , Nobuyuki Kurashima
发明人： Kazuhito Uchikura , Kazuo Nishimoto , Masayuki Hattori , Nobuo Kawahashi , Hiroyuki Yano , Yukiteru Matsui , Gaku Minamihaba , Dai Fukushima , Nobuyuki Kurashima
IPC分类号： C09G1/02 , C09K3/14 , H01L21/02 , H01L21/321 , B24B1/00
CPC分类号： H01L21/02074 , C09G1/02 , C09K3/1463 , H01L21/3212
摘要： A chemical mechanical polishing aqueous dispersion comprises a component (A) composed of abrasive grains, a component (B) composed of at least one of quinolinecarboxylic acid and pyridinecarboxylic acid, a component (C) composed of an organic acid other than quinolinecarboxylic acid and pyridinecarboxylic acid and a component (D) composed of an oxidizing agent, wherein a mass ratio (WB/WC) of the content (WB) of the component (B) to the content (WC) of the component (C) is not less than 0.01 and less than 2, and the concentration of an ammonia component composed of ammonia and ammonium ion is not more than 0.005 mol/litter. According to the chemical mechanical polishing aqueous dispersion, various layers to be processed can be polished with high efficiency, and a sufficiently planarized polished surface of high precision can be obtained.

6. 发明授权

US07087530B2 Aqueous dispersion for chemical mechanical polishing 有权
标题翻译：化学机械抛光用水分散体
公开(公告)号：US07087530B2
公开(公告)日：2006-08-08
申请号：US10689680
申请日：2003-10-22
申请人： Masayuki Motonari , Masayuki Hattori , Nobuo Kawahashi
发明人： Masayuki Motonari , Masayuki Hattori , Nobuo Kawahashi
IPC分类号： H01L21/302
CPC分类号： C09G1/02 , C09K3/1463 , H01L21/31053
摘要： The invention provides an aqueous dispersion for chemical mechanical polishing that can limit scratches of a specific size to a specific number, even with interlayer insulating films with small elastic moduli (silsesquioxane, fluorine-containing SiO2, polyimide-based resins, and the like.). When using the aqueous dispersion for chemical mechanical polishing of an interlayer insulating film with an elastic modulus of no greater than 20 GPa as measured by the nanoindentation method, the number of scratches with a maximum length of 1 μm or greater is an average of no more than 5 per unit area of 0.01 mm2 of the polishing surface. An aqueous dispersion for CMP or an aqueous dispersion for interlayer insulating film CMP according to another aspect of the invention contains a scratch inhibitor agent and an abrasive. The scratch inhibitor may be biphenol, bipyridyl, 2-vinylpyridine, salicylaldoxime, o-phenylenediamine, catechol, 7-hydroxy-5-methyl-1,3,4-triazaindolizine, and the like. The abrasive may consist of inorganic particles, organic particles or organic/inorganic composite particles. The organic/inorganic composite particles may be formed by polycondensation of an alkoxysilane, aluminum alkoxide, titanium alkoxide, and the like in the presence of polymer particles of polystyrene or the like, and bonding of polysiloxane, and the like, on at least the surface of the polymer particles.
摘要翻译：本发明提供了一种用于化学机械抛光的水分散体，即使使用具有小弹性模量的层间绝缘膜（倍半硅氧烷，含氟SiO 2，聚酰亚胺 - 基树脂等）。当通过纳米压痕法测量的弹性模量不大于20GPa的层间绝缘膜的化学机械抛光使用水性分散体时，最大长度为1μm或更大的划痕数是不超过平均值比抛光表面的0.01mm 2单位面积的5个。根据本发明另一方面，用于CMP的水分散体或用于层间绝缘膜CMP的水性分散体含有防刮剂和研磨剂。刮擦抑制剂可以是联苯酚，联吡啶基，2-乙烯基吡啶，水杨醛肟，邻苯二胺，邻苯二酚，7-羟基-5-甲基-1,3,4-三氮杂多卡因等。研磨剂可以由无机颗粒，有机颗粒或有机/无机复合颗粒组成。有机/无机复合颗粒可以通过在聚苯乙烯等的聚合物颗粒的存在下的烷氧基硅烷，烷氧基铝，烷氧基钛等的缩聚以及聚硅氧烷等的至少表面的聚合物颗粒。

7. 发明授权

US06447695B1 Aqueous dispersion composition for chemical mechanical polishing for use in manufacture of semiconductor devices 有权
标题翻译：用于制造半导体器件的化学机械抛光用水性分散体组合物
公开(公告)号：US06447695B1
公开(公告)日：2002-09-10
申请号：US09655305
申请日：2000-09-05
申请人： Masayuki Motonari , Masayuki Hattori , Nobuo Kawahashi
发明人： Masayuki Motonari , Masayuki Hattori , Nobuo Kawahashi
IPC分类号： C09K1300
CPC分类号： C09G1/02 , H01L21/3212
摘要： The present invention provides an aqueous dispersion composition for chemical mechanical polishing which is useful for the manufacture of semiconductor devices, and which for polishing of different types of working films and barrier metal layers formed on semiconductor substrates, can achieve efficient polishing particularly of barrier metal surfaces and can give adequately flattened and high precision finished surfaces. The aqueous dispersion composition for chemical mechanical polishing has properties such that, when polishing a copper film, a tantalum layer and/or tantalum nitride layer a and an insulating film under the same conditions, the ratio (RCu/RTa) between the polishing rate of the copper film (RCu) and the polishing rate of the tantalum layer and/or tantalum nitride layer (RTa) is no greater than 1/20, and the ratio (RCu/RIn) between the polishing rate of the copper film (RCu) and the polishing rate of the insulating film (RIn) is from 5 to ⅕. RCu/RTa is preferably no greater than {fraction (1/30)}, especially no greater than {fraction (1/40)} and most preferably no greater than {fraction (1/50)}, while RCu/RIn is preferably 4¼, especially 3⅓ and more preferably 2½.
摘要翻译：本发明提供了一种用于化学机械抛光的水性分散组合物，其用于制造半导体器件，并且用于抛光形成在半导体衬底上的不同类型的工作膜和阻挡金属层，可以实现特别是阻挡金属表面的高效抛光并可以给予适当扁平和高精度的成品表面。用于化学机械抛光的水性分散组合物具有这样的特性，即在相同条件下对铜膜，钽层和/或氮化钽层a和绝缘膜进行研磨时，抛光速率之间的比（RCu / RTa）铜膜（RCu）和钽层和/或氮化钽层（RTa）的研磨速度不大于1/20，铜膜（RCu）的研磨速度之比（RCu / RIn）绝缘膜（RIn）的研磨速度为5〜 RCu / R a优选不大于{分数（1/30）}，特别是不大于{分数（1/40）}，最优选不大于{分数（1/50）}，而RCu / RIn优选 4¼，特别是3 1/3，更优选为2½。

8. 发明授权

US07153369B2 Method of chemical mechanical polishing 有权
公开(公告)号：US07153369B2
公开(公告)日：2006-12-26
申请号：US10200504
申请日：2002-07-23
申请人： Masayuki Motonari , Masayuki Hattori , Nobuo Kawahashi
发明人： Masayuki Motonari , Masayuki Hattori , Nobuo Kawahashi
IPC分类号： C23G1/14 , C09G1/02 , C09K3/14 , H01L21/321
CPC分类号： C09K3/1463 , C09G1/02 , H01L21/3212 , Y10S134/902
摘要： It is an object of the invention to provide an aqueous dispersion for CMP that produces no scratches on polishing surfaces and that polishes with an adequate rate, when used for polishing of copper and the like. The aqueous dispersion of the invention contains water and polymer particles composed of a polymer with a specific functional group, and it may also contain a complexing agent, a compound that forms a passivation film on polishing surfaces and/or an oxidizing agent. The specific functional group is a functional group that can react with the metals of polishing surfaces or that can form a cation, and it is preferably selected from among amino, pyridyl and acrylamide groups. The polymer can be obtained using a initiator and/or monomer possessing the specific functional group. The polymer may also have a crosslinked structure.

9. 发明授权

US07183211B2 Process for chemical mechanical polishing of semiconductor substrate and aqueous dispersion for chemical mechanical polishing 有权
标题翻译：用于化学机械抛光的半导体衬底的化学机械抛光和水性分散体的方法
公开(公告)号：US07183211B2
公开(公告)日：2007-02-27
申请号：US10349092
申请日：2003-01-23
申请人： Tomohisa Konno , Masayuki Motonari , Masayuki Hattori , Nobuo Kawahashi
发明人： Tomohisa Konno , Masayuki Motonari , Masayuki Hattori , Nobuo Kawahashi
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： C09G1/02 , H01L21/3212
摘要： The object of the present invention is to provide a process for chemical mechanical polishing of semiconductor substrate that is particularly useful for chemical mechanical polishing a wafer having a wiring pattern and an insulating layer having a low dielectric constant is formed between wiring patterns, interlayers in the case of a multi-layer wiring and the like in the process of producing a semiconductor device, and an aqueous dispersion for chemical mechanical polishing which is used in this process. The process for chemical mechanical polishing of a semiconductor substrate of the present invention is that a surface to be polished of the semiconductor substrate is polished under conditions of a rotation speed of a polishing table fixing a polishing pad at the range from 50 to 200 rpm and a pressing pressure of the semiconductor substrate fixed to a polishing head against a polishing pad at the range from 700 to 18,000 Pa, by using an aqueous dispersion for chemical mechanical polishing comprising an abrasive and at least one compound selected from the group consisting of polycarboxylic acid having a heterocycle and anhydride thereof, and the polishing pad.
摘要翻译：本发明的目的是提供一种半导体衬底的化学机械抛光方法，该方法特别适用于化学机械抛光，具有布线图案的晶片和具有低介电常数的绝缘层形成在布线图案，中间层在制造半导体器件的过程中的多层布线等的情况以及用于该工艺的化学机械抛光用水性分散体。本发明的半导体基板的化学机械研磨方法是在将抛光垫固定在50〜200rpm的范围内的研磨台的旋转速度的条件下对半导体基板的被研磨面进行研磨，通过使用包含研磨剂和至少一种选自多元羧酸的化合物的化合物机械抛光用水性分散体，将固定在研磨头上的研磨头的半导体衬底的压力压在700至18,000Pa的范围内具有杂环和酸酐，以及抛光垫。

10. 发明授权

US06653267B2 Aqueous dispersion for chemical mechanical polishing used for polishing of copper 有权
公开(公告)号：US06653267B2
公开(公告)日：2003-11-25
申请号：US09893961
申请日：2001-06-29
申请人： Hiroyuki Yano , Gaku Minamihaba , Masayuki Motonari , Masayuki Hattori , Nobuo Kawahashi
发明人： Hiroyuki Yano , Gaku Minamihaba , Masayuki Motonari , Masayuki Hattori , Nobuo Kawahashi
IPC分类号： C11D328
CPC分类号： C09G1/02 , C09K3/1463 , C23F3/04 , H01L21/3212
摘要： The present invention provides an aqueous dispersion for chemical mechanical polishing suitable for polishing of copper, which has a high polishing speed and a low erosion rate with overpolishing. The aqueous dispersion for chemical mechanical polishing of the invention contains a compound having a heterocycle, a surfactant and an oxidizing agent, wherein the compound having a heterocycle and the surfactant are in a weight ratio of 1:10 to 1:0.03. The aqueous dispersion may also contain abrasive particle. The compound having a heterocycle is preferably quinaldic acid, benzotriazole or the like. The surfactant is preferably a sulfonic acid salt such as potassium dodecylbenzenesulfonate or ammonium dodecylbenzenesulfonate, and the oxidizing agent is preferably ammonium persulfate, hydrogen peroxide or the like. The abrasive particle used may be inorganic particle such as colloidal silica, an organic particle such as polymer particle, or an organic/inorganic composite particle comprising a combination thereof.

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