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    • 7. 发明授权
    • Semiconductor laser device and method of fabricating the same
    • 半导体激光器件及其制造方法
    • US06771676B2
    • 2004-08-03
    • US10234250
    • 2002-09-05
    • Kunio TakeuchiShigeyuki OkamotoRyoji HiroyamaYasuhiko NomuraDaijiro Inoue
    • Kunio TakeuchiShigeyuki OkamotoRyoji HiroyamaYasuhiko NomuraDaijiro Inoue
    • H01S304
    • B82Y20/00H01S5/0021H01S5/0213H01S5/0224H01S5/02272H01S5/0425H01S5/2231H01S5/34333
    • A semiconductor laser device capable of improving reliability is obtained in a structure formed by mounting a semiconductor laser element on a submount (base) in a junction-down system. This semiconductor laser device comprises a first electrode layer formed on the surface of a semiconductor element including an emission layer to have a shape comprising recess portions and projection portions, a base mounted with the semiconductor element, and a plurality of low melting point metal layers provided between the first electrode layer formed on the surface of the semiconductor element and the base for bonding the first electrode layer formed on the surface of the semiconductor element and the base to each other. Thus, the plurality of low melting point metal layers easily embed clearances resulting from the shape comprising recess portions and projection portions of the surface of the semiconductor element dissimilarly to a case of employing a single low melting point metal layer.
    • 通过将半导体激光元件安装在下降系统中的底座(基座)上形成的结构,可以获得能够提高可靠性的半导体激光器件。 该半导体激光器件包括形成在包括发光层的半导体元件的表面上的第一电极层,该发光层具有包括凹部和突出部的形状,安装有半导体元件的基底和设置有多个低熔点金属层 在形成在半导体元件的表面上的第一电极层和用于将形成在半导体元件的表面上的第一电极层与基底接合的基底之间。 因此,多个低熔点金属层与使用单个低熔点金属层的情况相比,容易地嵌入由包含凹部的形状和半导体元件的表面的突出部分形成的间隙。