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1. 发明授权

US06654397B2 Semiconductor laser device and manufacturing method thereof 失效
公开(公告)号：US06654397B2
公开(公告)日：2003-11-25
申请号：US09941663
申请日：2001-08-30
申请人： Kunio Takeuchi , Ryoji Hiroyama , Shigeyuki Okamoto , Koji Tominaga , Yasuhiko Nomura , Daijiro Inoue
发明人： Kunio Takeuchi , Ryoji Hiroyama , Shigeyuki Okamoto , Koji Tominaga , Yasuhiko Nomura , Daijiro Inoue
IPC分类号： H01S500
CPC分类号： H01S5/16 , H01S5/0425 , H01S5/168
摘要： An n-GaAs current blocking layer is formed on a p-AlGaInP first cladding layer, on sides of a ridge portion and in a region on the upper surface of the ridge portion above a window region. Raised portions are formed in a p-GaAs cap layer in regions in the vicinity of facets, while raised regions are formed in the regions of a first electrode in the vicinity of the facets. A second electrode having a thickness larger than the height of the raised regions is formed on the region between the raised regions of the first electrode.

2. 发明授权

US06771676B2 Semiconductor laser device and method of fabricating the same 有权
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US06771676B2
公开(公告)日：2004-08-03
申请号：US10234250
申请日：2002-09-05
申请人： Kunio Takeuchi , Shigeyuki Okamoto , Ryoji Hiroyama , Yasuhiko Nomura , Daijiro Inoue
发明人： Kunio Takeuchi , Shigeyuki Okamoto , Ryoji Hiroyama , Yasuhiko Nomura , Daijiro Inoue
IPC分类号： H01S304
CPC分类号： B82Y20/00 , H01S5/0021 , H01S5/0213 , H01S5/0224 , H01S5/02272 , H01S5/0425 , H01S5/2231 , H01S5/34333
摘要： A semiconductor laser device capable of improving reliability is obtained in a structure formed by mounting a semiconductor laser element on a submount (base) in a junction-down system. This semiconductor laser device comprises a first electrode layer formed on the surface of a semiconductor element including an emission layer to have a shape comprising recess portions and projection portions, a base mounted with the semiconductor element, and a plurality of low melting point metal layers provided between the first electrode layer formed on the surface of the semiconductor element and the base for bonding the first electrode layer formed on the surface of the semiconductor element and the base to each other. Thus, the plurality of low melting point metal layers easily embed clearances resulting from the shape comprising recess portions and projection portions of the surface of the semiconductor element dissimilarly to a case of employing a single low melting point metal layer.
摘要翻译：通过将半导体激光元件安装在下降系统中的底座（基座）上形成的结构，可以获得能够提高可靠性的半导体激光器件。该半导体激光器件包括形成在包括发光层的半导体元件的表面上的第一电极层，该发光层具有包括凹部和突出部的形状，安装有半导体元件的基底和设置有多个低熔点金属层在形成在半导体元件的表面上的第一电极层和用于将形成在半导体元件的表面上的第一电极层与基底接合的基底之间。因此，多个低熔点金属层与使用单个低熔点金属层的情况相比，容易地嵌入由包含凹部的形状和半导体元件的表面的突出部分形成的间隙。

3. 发明授权

US07260130B2 Semiconductor laser device and method of fabricating the same 失效
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US07260130B2
公开(公告)日：2007-08-21
申请号：US10811137
申请日：2004-03-29
申请人： Kunio Takeuchi , Ryoji Hiroyama , Daijiro Inoue , Shigeyuki Okamoto , Noriaki Matsuoka , Shingo Kameyama , Kiyoshi Oota
发明人： Kunio Takeuchi , Ryoji Hiroyama , Daijiro Inoue , Shigeyuki Okamoto , Noriaki Matsuoka , Shingo Kameyama , Kiyoshi Oota
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01L24/83 , H01L2224/83192 , H01S5/0224 , H01S5/02272 , H01S5/0425 , H01S5/22 , H01S5/2201 , H01S5/305 , H01S5/3054 , H01S5/3211 , H01S5/34326
摘要： A semiconductor laser device capable of improving heat dissipativity, simplifying the fabrication process and improving the fabrication yield is obtained. This semiconductor laser device comprises a semiconductor layer formed on an emission layer while constituting a convex ridge portion, a current blocking layer consisting of a semiconductor formed to cover at least the side surfaces of the ridge portion, a first metal electrode formed to be in contact with the upper surface of the ridge portion and convex support portions arranged on both sides of the ridge portion at a prescribed interval from the ridge portion.
摘要翻译：得到能够提高散热性，简化制造工序，提高制造成品率的半导体激光装置。该半导体激光器件包括形成在发射层上同时构成凸脊部分的半导体层，由形成为至少覆盖脊部的侧表面的半导体构成的电流阻挡层，形成为接触的第一金属电极脊部的上表面和从脊部以规定间隔配置在脊部两侧的凸状支撑部。

4. 发明申请

US20070274359A1 Semiconductor laser device and method of fabricating the same 审中-公开
公开(公告)号：US20070274359A1
公开(公告)日：2007-11-29
申请号：US11878331
申请日：2007-07-24
申请人： Kunio Takeuchi , Ryoji Hiroyama , Daijiro Inoue , Shigeyuki Okamoto , Noriaki Matsuoka , Shingo Kameyama , Kiyoshi Oota
发明人： Kunio Takeuchi , Ryoji Hiroyama , Daijiro Inoue , Shigeyuki Okamoto , Noriaki Matsuoka , Shingo Kameyama , Kiyoshi Oota
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01L24/83 , H01L2224/83192 , H01S5/0224 , H01S5/02272 , H01S5/0425 , H01S5/22 , H01S5/2201 , H01S5/305 , H01S5/3054 , H01S5/3211 , H01S5/34326
摘要： A semiconductor laser device capable of improving heat dissipativity, simplifying the fabrication process and improving the fabrication yield is obtained. This semiconductor laser device comprises a semiconductor layer formed on an emission layer while constituting a convex ridge portion, a current blocking layer consisting of a semiconductor formed to cover at least the side surfaces of the ridge portion, a first metal electrode formed to be in contact with the upper surface of the ridge portion and convex support portions arranged on both sides of the ridge portion at a prescribed interval from the ridge portion.

5. 发明授权

US07589357B2 Semiconductor device and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07589357B2
公开(公告)日：2009-09-15
申请号：US11976972
申请日：2007-10-30
申请人： Masayuki Hata , Tadao Toda , Shigeyuki Okamoto , Daijiro Inoue , Yasuyuki Bessho , Yasuhiko Nomura , Tsutomu Yamaguchi
发明人： Masayuki Hata , Tadao Toda , Shigeyuki Okamoto , Daijiro Inoue , Yasuyuki Bessho , Yasuhiko Nomura , Tsutomu Yamaguchi
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , B82Y20/00 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L33/0075 , H01L33/0079 , H01L2224/48091 , H01S5/0202 , H01S5/02212 , H01S5/02276 , H01S5/0422 , H01S5/0425 , H01S5/0683 , H01S5/2009 , H01S5/22 , H01S5/2201 , H01S5/2214 , H01S5/305 , H01S5/3063 , H01S5/3211 , H01S5/34333 , H01S2304/04 , H01S2304/12 , H01L2924/00014
摘要： A semiconductor device capable of stabilizing operations thereof is provided. This semiconductor device comprises a substrate provided with a region having concentrated dislocations at least on part of the back surface thereof, a semiconductor element layer formed on the front surface of the substrate, an insulator film formed on the region of the back surface of the substrate having concentrated dislocations and a back electrode formed to be in contact with a region of the back surface of the substrate other than the region having concentrated dislocations.
摘要翻译：提供能够稳定其操作的半导体器件。该半导体器件包括：衬底，其具有至少部分后表面具有浓集位错的区域，形成在衬底的前表面上的半导体元件层，形成在衬底的背面的区域上的绝缘膜具有集中位错和形成为与除了具有集中位错的区域以外的基板的背面的区域接触的背面电极。

6. 发明授权

US07372077B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07372077B2
公开(公告)日：2008-05-13
申请号：US10766031
申请日：2004-01-29
申请人： Masayuki Hata , Tadao Toda , Shigeyuki Okamoto , Daijiro Inoue , Yasuyuki Bessho , Yasuhiko Nomura , Tsutomu Yamaguchi
发明人： Masayuki Hata , Tadao Toda , Shigeyuki Okamoto , Daijiro Inoue , Yasuyuki Bessho , Yasuhiko Nomura , Tsutomu Yamaguchi
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , B82Y20/00 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L33/0075 , H01L33/0079 , H01L2224/48091 , H01S5/0202 , H01S5/02212 , H01S5/02276 , H01S5/0422 , H01S5/0425 , H01S5/0683 , H01S5/2009 , H01S5/22 , H01S5/2201 , H01S5/2214 , H01S5/305 , H01S5/3063 , H01S5/3211 , H01S5/34333 , H01S2304/04 , H01S2304/12 , H01L2924/00014
摘要： A semiconductor device capable of stabilizing operations thereof is provided. This semiconductor device comprises a substrate provided with a region having concentrated dislocations at least on part of the back surface thereof, a semiconductor element layer formed on the front surface of the substrate, an insulator film formed on the region of the back surface of the substrate having concentrated dislocations and a back electrode formed to be in contact with a region of the back surface of the substrate other than the region having concentrated dislocations.
摘要翻译：提供能够稳定其操作的半导体器件。该半导体器件包括：衬底，其具有至少部分后表面具有浓集位错的区域，形成在衬底的前表面上的半导体元件层，形成在衬底的背面的区域上的绝缘膜具有集中位错和形成为与除了具有集中位错的区域以外的基板的背面的区域接触的背面电极。

7. 发明申请

US20080073664A1 Semiconductor device and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20080073664A1
公开(公告)日：2008-03-27
申请号：US11976972
申请日：2007-10-30
申请人： Masayuki Hata , Tadao Toda , Shigeyuki Okamoto , Daijiro Inoue , Yasuyuki Bessho , Yasuhiko Nomura , Tsutomu Yamaguchi
发明人： Masayuki Hata , Tadao Toda , Shigeyuki Okamoto , Daijiro Inoue , Yasuyuki Bessho , Yasuhiko Nomura , Tsutomu Yamaguchi
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , B82Y20/00 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L33/0075 , H01L33/0079 , H01L2224/48091 , H01S5/0202 , H01S5/02212 , H01S5/02276 , H01S5/0422 , H01S5/0425 , H01S5/0683 , H01S5/2009 , H01S5/22 , H01S5/2201 , H01S5/2214 , H01S5/305 , H01S5/3063 , H01S5/3211 , H01S5/34333 , H01S2304/04 , H01S2304/12 , H01L2924/00014
摘要： A semiconductor device capable of stabilizing operations thereof is provided. This semiconductor device comprises a substrate provided with a region having concentrated dislocations at least on part of the back surface thereof, a semiconductor element layer formed on the front surface of the substrate, an insulator film formed on the region of the back surface of the substrate having concentrated dislocations and a back electrode formed to be in contact with a region of the back surface of the substrate other than the region having concentrated dislocations.
摘要翻译：提供能够稳定其操作的半导体器件。该半导体器件包括：衬底，其具有至少部分后表面具有浓集位错的区域，形成在衬底的前表面上的半导体元件层，形成在衬底的背面的区域上的绝缘膜具有集中位错和形成为与除了具有集中位错的区域以外的基板的背面的区域接触的背面电极。

8. 发明申请

US20070292979A1 Semiconductor device and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070292979A1
公开(公告)日：2007-12-20
申请号：US11723449
申请日：2007-03-20
申请人： Masayuki Hata , Tadao Toda , Shigeyuki Okamoto , Daijiro Inoue , Yasuyuki Bessho , Yasuhiko Nomura , Tsutomu Yamaguchi
发明人： Masayuki Hata , Tadao Toda , Shigeyuki Okamoto , Daijiro Inoue , Yasuyuki Bessho , Yasuhiko Nomura , Tsutomu Yamaguchi
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , B82Y20/00 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L33/0075 , H01L33/0079 , H01L2224/48091 , H01S5/0202 , H01S5/02212 , H01S5/02276 , H01S5/0422 , H01S5/0425 , H01S5/0683 , H01S5/2009 , H01S5/22 , H01S5/2201 , H01S5/2214 , H01S5/305 , H01S5/3063 , H01S5/3211 , H01S5/34333 , H01S2304/04 , H01S2304/12 , H01L2924/00014
摘要： A semiconductor device capable of stabilizing operations thereof is provided. This semiconductor device comprises a substrate provided with a region having concentrated dislocations at least on part of the back surface thereof, a semiconductor element layer formed on the front surface of the substrate, an insulator film formed on the region of the back surface of the substrate having concentrated dislocations and a back electrode formed to be in contact with a region of the back surface of the substrate other than the region having concentrated dislocations.
摘要翻译：提供能够稳定其操作的半导体器件。该半导体器件包括：衬底，其具有至少部分后表面具有浓集位错的区域，形成在衬底的前表面上的半导体元件层，形成在衬底的背面的区域上的绝缘膜具有集中位错和形成为与除了具有集中位错的区域以外的基板的背面的区域接触的背面电极。

9. 发明授权

US06891872B1 Semiconductor laser device and method of manufacturing the same 失效
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US06891872B1
公开(公告)日：2005-05-10
申请号：US09669448
申请日：2000-09-25
申请人： Ryouji Hiroyama , Yasuhiko Nomura , Koutarou Furusawa , Kunio Takeuchi , Shigeyuki Okamoto
发明人： Ryouji Hiroyama , Yasuhiko Nomura , Koutarou Furusawa , Kunio Takeuchi , Shigeyuki Okamoto
IPC分类号： H01S5/20 , H01S5/22 , H01S5/223 , H01S5/00
CPC分类号： H01S5/2231 , H01S5/2205 , H01S5/221 , H01S5/222 , H01S5/2227 , H01S2301/18
摘要： A semiconductor laser device is characterized in that an angle θ of inclination formed by the side surfaces of a ridge portion and a lower part of the ridge portion is at least 70° and not more than 117°, a p-type cladding layer is made of AlX1Ga1-X1As, a first current blocking layer is made of AlX2Ga1-X2As, the distance between an emission layer and the first current blocking layer satisfies the relation of t≦0.275/(1−(X2−X1)) assuming that t represents the distance, and a lower width W of the ridge portion is at least 2 μm and not more than 5 μm.
摘要翻译：半导体激光器件的特征在于，由脊部的脊侧部分的侧表面和脊部的下部形成的倾斜角度θ至少为70°并且不大于117°，制成p型包覆层的Al X1 Ga 1-X1 As，第一电流阻挡层由Al X2 Ga 1-X2 As，假设t表示距离，发光层与第一电流阻挡层之间的距离满足t <= 0.275 /（1-（X2-X1））的关系，并且脊部的下宽度W为至少2个妈妈，不超过5个妈妈。

10. 发明授权

US08101465B2 Method of fabricating a semiconductor device with a back electrode 有权
标题翻译：制造具有背面电极的半导体器件的方法
公开(公告)号：US08101465B2
公开(公告)日：2012-01-24
申请号：US11723449
申请日：2007-03-20
申请人： Masayuki Hata , Tadao Toda , Shigeyuki Okamoto , Daijiro Inoue
发明人： Masayuki Hata , Tadao Toda , Shigeyuki Okamoto , Daijiro Inoue
IPC分类号： H01L21/00
CPC分类号： H01L33/007 , B82Y20/00 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L33/0075 , H01L33/0079 , H01L2224/48091 , H01S5/0202 , H01S5/02212 , H01S5/02276 , H01S5/0422 , H01S5/0425 , H01S5/0683 , H01S5/2009 , H01S5/22 , H01S5/2201 , H01S5/2214 , H01S5/305 , H01S5/3063 , H01S5/3211 , H01S5/34333 , H01S2304/04 , H01S2304/12 , H01L2924/00014
摘要： A semiconductor device capable of stabilizing operations thereof is provided. This semiconductor device comprises a substrate provided with a region having concentrated dislocations at least on part of the back surface thereof, a semiconductor element layer formed on the front surface of the substrate, an insulator film formed on the region of the back surface of the substrate having concentrated dislocations and a back electrode formed to be in contact with a region of the back surface of the substrate other than the region having concentrated dislocations.
摘要翻译：提供能够稳定其操作的半导体器件。该半导体器件包括：衬底，其具有至少部分后表面具有浓集位错的区域，形成在衬底的前表面上的半导体元件层，形成在衬底的背面的区域上的绝缘膜具有集中位错和形成为与除了具有集中位错的区域以外的基板的背面的区域接触的背面电极。

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