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1. 发明授权

US07842619B2 Plasma processing method 有权
标题翻译：等离子体处理方法
公开(公告)号：US07842619B2
公开(公告)日：2010-11-30
申请号：US12202692
申请日：2008-09-02
申请人： Masatoshi Miyake , Kenji Maeda , Kenetsu Yokogawa , Masaru Izawa
发明人： Masatoshi Miyake , Kenji Maeda , Kenetsu Yokogawa , Masaru Izawa
IPC分类号： H01L21/00
CPC分类号： H01L21/31138 , H01J37/321 , H01J37/32165 , H01J37/3244 , H01J37/32449 , H01L21/31116 , Y10S438/905
摘要： A plasma processing method includes etching an insulating film of a sample to be processed using plasma generated from etching gas, supplying a large flow of inert gas from above the sample while having the sample mounted on a sample mounting stage, supplying deposit removal gas to only an area near a side wall of a processing chamber, and controlling a plasma density distribution to thereby vary a plasma density at a center area of the processing chamber and a plasma density at an area near the side wall of the processing chamber so as to perform a deposited film removing process for removing the film deposited on the side wall of the processing chamber.
摘要翻译：等离子体处理方法包括使用蚀刻气体产生的等离子体对待处理样品的绝缘膜进行蚀刻，同时将样品安装在样品安装台上，从样品安装台提供大量惰性气体，仅向其提供沉积物去除气体处理室的侧壁附近的区域，并且控制等离子体密度分布，从而改变处理室的中心区域处的等离子体密度和处理室侧壁附近的等离子体密度，以便执行用于去除沉积在处理室的侧壁上的膜的沉积膜去除工艺。

2. 发明申请

US20100029024A1 PLASMA PROCESSING METHOD 有权
标题翻译：等离子体处理方法
公开(公告)号：US20100029024A1
公开(公告)日：2010-02-04
申请号：US12202692
申请日：2008-09-02
申请人： Masatoshi Miyake , Kenji Maeda , Kenetsu Yokogawa , Masaru Izawa
发明人： Masatoshi Miyake , Kenji Maeda , Kenetsu Yokogawa , Masaru Izawa
IPC分类号： H01L21/66 , H01L21/3065
CPC分类号： H01L21/31138 , H01J37/321 , H01J37/32165 , H01J37/3244 , H01J37/32449 , H01L21/31116 , Y10S438/905
摘要： The invention provides a plasma processing method capable of reducing the damage applied to the low-k film or the underlayer. The method uses a plasma processing apparatus comprising gas supply means 41, 42 for respectively supplying processing gas independently to a center area of the processing chamber 1 and to an area near the sidewall thereof; a sample mounting electrode 13 for mounting a sample W to be processed; a high frequency power supply 21 for generating plasma; an antenna 11; and a plasma generating means 17 for generating plasma in the processing chamber; the method comprising etching an insulating film on the sample W using plasma; and supplying a large flow of inert gas from the center area of the chamber while having the sample W mounted on the sample mounting electrode 13, supplying deposit removal gas to only the area near the side wall of the processing chamber 1 and controlling the plasma density distribution to thereby vary the plasma density at the center area of the processing chamber and the plasma density at the area near the side wall of the processing chamber, so as to perform a deposited film removing process for removing the film deposited on the side wall of the processing chamber.
摘要翻译：本发明提供一种等离子体处理方法，其能够降低对低k膜或底层施加的损伤。该方法使用包括气体供给装置41,42的等离子体处理装置，用于分别独立地向处理室1的中心区域供应处理气体，并且分配到其侧壁附近的区域; 用于安装待处理样品W的样品安装电极13; 用于产生等离子体的高频电源21; 天线11; 以及用于在处理室中产生等离子体的等离子体产生装置17; 该方法包括使用等离子体蚀刻样品W上的绝缘膜; 并且在将样品W安装在样品安装电极13上的同时，从室的中心区域供给大量惰性气体，仅将沉积物去除气体提供给处理室1的侧壁附近的区域，并控制等离子体密度从而改变处理室的中心区域处的等离子体密度和处理室侧壁附近的区域的等离子体密度，从而进行沉积膜去除工艺，以去除沉积在侧壁上的膜处理室。

3. 发明申请

US20070023398A1 Plasma processing apparatus 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：US20070023398A1
公开(公告)日：2007-02-01
申请号：US11355165
申请日：2006-02-16
申请人： Hiroyuki Kobayashi , Masatoshi Miyake , Kenetsu Yokogawa , Masaru Izawa
发明人： Hiroyuki Kobayashi , Masatoshi Miyake , Kenetsu Yokogawa , Masaru Izawa
IPC分类号： B23H7/00 , B23H1/00
CPC分类号： H01J37/32678 , H01J37/32027 , H01J37/32082 , H01J37/32706 , H01J2237/335
摘要： A plasma processing apparatus which can remove foreign particles over an object to be processed during or before/after the discharging is provided. The plasma processing apparatus includes a processing chamber; a processing gas supplying unit for supplying a processing gas into the processing chamber, an antenna electrode for supplying a radio frequency electric power into the processing chamber and forming a plasma, a vacuum evacuating unit for evacuating the inside of the processing chamber; a disposing electrode for disposing the object into the processing chamber and holding the object therein; and a DC power supply for supplying a negative electric potential to the antenna electrode.
摘要翻译：提供一种等离子体处理装置，其可以在放电期间或之后去除待处理物体上的异物。等离子体处理装置包括处理室; 用于将处理气体供给到处理室中的处理气体供给单元，用于向处理室供给射频电力并形成等离子体的天线电极，用于抽出处理室内部的真空排气单元; 设置电极，用于将物体放置在处理室中并将物体保持在其中; 以及用于向天线电极提供负电位的直流电源。

4. 发明申请

US20130112669A1 HEAT TREATMENT APPARATUS 审中-公开
标题翻译：热处理设备
公开(公告)号：US20130112669A1
公开(公告)日：2013-05-09
申请号：US13354358
申请日：2012-01-20
申请人： Takashi UEMURA , Kenetsu Yokogawa , Masatoshi Miyake , Masaru Izawa , Satoshi Sakai
发明人： Takashi UEMURA , Kenetsu Yokogawa , Masatoshi Miyake , Masaru Izawa , Satoshi Sakai
IPC分类号： B23K9/00
CPC分类号： H01J37/32082
摘要： The present invention provides a heat treatment apparatus which can reduce a surface roughing of a processed substrate while keeping a heat efficiency high, even in the case of heating a sample to be heated to 1200° C. or higher. The present invention is a heat treatment apparatus carrying out a heat treatment of a sample to be heated, wherein a plasma generated by a glow electric discharge is used as a heating source, and the sample to be heated is indirectly heated.
摘要翻译：本发明提供一种热处理装置，即使在将待加热的样品加热至1200℃以上的情况下，也能够在保持热效率高的同时降低加工基板的表面粗糙化。本发明是一种对待加热样品进行热处理的热处理装置，其中通过辉光放电产生的等离子体被用作加热源，被加热物被间接加热。

5. 发明授权

US09490104B2 Heat treatment apparatus 有权
标题翻译：热处理设备
公开(公告)号：US09490104B2
公开(公告)日：2016-11-08
申请号：US13550638
申请日：2012-07-17
申请人： Ken'etsu Yokogawa , Masatoshi Miyake , Takashi Uemura , Masaru Izawa , Satoshi Sakai
发明人： Ken'etsu Yokogawa , Masatoshi Miyake , Takashi Uemura , Masaru Izawa , Satoshi Sakai
IPC分类号： B23K9/00 , H01J37/32 , H01L21/324 , H01L21/67
CPC分类号： H01J37/32091 , H01J37/32522 , H01L21/324 , H01L21/67115
摘要： Provided is a heat treatment apparatus that is high in thermal efficiency and can reduce surface roughness of a substrate to be treated even when a specimen is heated at 1200° C. or higher.The heat treatment apparatus heating the specimen includes a heating plate heated by plasma formed in an area of a gap to heat the specimen.
摘要翻译：加热试样的热处理装置包括由等离子体加热的加热板，所述等离子体形成在间隙的区域中以加热试样。

6. 发明申请

US20130112670A1 HEAT TREATMENT APPARATUS 有权
标题翻译：热处理设备
公开(公告)号：US20130112670A1
公开(公告)日：2013-05-09
申请号：US13550638
申请日：2012-07-17
申请人： Ken'etsu YOKOGAWA , Masatoshi Miyake , Takashi Uemura , Masaru Izawa , Satoshi Sakai
发明人： Ken'etsu YOKOGAWA , Masatoshi Miyake , Takashi Uemura , Masaru Izawa , Satoshi Sakai
IPC分类号： B23K9/00
CPC分类号： H01J37/32091 , H01J37/32522 , H01L21/324 , H01L21/67115
摘要： Provided is a heat treatment apparatus that is high in thermal efficiency and can reduce surface roughness of a substrate to be treated even when a specimen is heated at 1200° C. or higher.The heat treatment apparatus heating the specimen includes a heating plate heated by plasma formed in an area of a gap to heat the specimen.
摘要翻译：提供一种热处理装置，其热效率高，即使在1200℃以上的加热条件下，也能够降低被处理基板的表面粗糙度。加热试样的热处理装置包括由等离子体加热的加热板，所述等离子体形成在间隙的区域中以加热试样。

7. 发明申请

US20130277354A1 METHOD AND APPARATUS FOR PLASMA HEAT TREATMENT 审中-公开
标题翻译：等离子体热处理的方法和装置
公开(公告)号：US20130277354A1
公开(公告)日：2013-10-24
申请号：US13571730
申请日：2012-08-10
申请人： Masatoshi Miyake , Ken'etsu Yokogawa , Takashi Uemura , Masaru Izawa , Satoshi Sakai
发明人： Masatoshi Miyake , Ken'etsu Yokogawa , Takashi Uemura , Masaru Izawa , Satoshi Sakai
IPC分类号： H05H1/48
CPC分类号： H01J37/32522 , H01J37/32724
摘要： There is provided a method for plasma heat treatment that can suppress the degradation of thermal efficiency even in the case where plasma is used to heat a sample at a temperature of 1,200° C. or more. In a method for plasma heat treatment that a sample to be processed is heated by plasma, the method including the steps of: preheating in which a heat treatment chamber is exhausted while preheating an upper electrode and a lower electrode using plasma generated between the upper electrode and the lower electrode; and heat treatment in which the sample to be processed is heated after the preheating step. The upper electrode and the lower electrode are electrodes containing carbon.
摘要翻译：提供了即使在1200℃以上的温度下使用等离子体加热试样的情况下也能够抑制热效率降低的等离子体热处理方法。在等离子体热处理的方法中，待加工的样品被等离子体加热，所述方法包括以下步骤：使用在上电极和下电极之间产生的等离子体预热上热电极和下电极的热处理室被排出的预热和下电极; 以及在预热步骤之后加热被处理样品的热处理。上电极和下电极是含有碳的电极。

8. 发明申请

US20100297849A1 PLASMA ETCHING METHOD FOR ETCHING AN OBJECT 审中-公开
标题翻译：用于蚀刻对象的等离子体蚀刻方法
公开(公告)号：US20100297849A1
公开(公告)日：2010-11-25
申请号：US12512084
申请日：2009-07-30
申请人： Masatoshi Miyake , Nobuyuki Negishi , Masatoshi Oyama , Tadamitsu Kanekiyo , Masaru Izawa
发明人： Masatoshi Miyake , Nobuyuki Negishi , Masatoshi Oyama , Tadamitsu Kanekiyo , Masaru Izawa
IPC分类号： H01L21/3065
CPC分类号： H01L21/31116 , H01L21/31144
摘要： The invention provides a plasma etching method capable of suppressing bowing of an opening of the object to be etched, and solving the lack of opening at a high aspect ratio portion in deep hole processing having a high aspect ratio. A plasma etching method for etching an object to be etched in a plasma etching apparatus using a mask patterned and formed on the object to be etched comprises sequentially performing a first step for etching the mask while attaching deposits on a side wall of an opening close to a surface of the mask pattern of the mask using fluorocarbon gas CxFy (x=1, 2, 3, 4, 5, 6, y=4, 5, 6, 8), and a second step for etching the object to be etched while removing the deposits attached to the side wall of the opening close to the surface of the mask pattern of the mask using fluorocarbon gas.
摘要翻译：本发明提供一种能够抑制待蚀刻物体的开口弯曲的等离子体蚀刻方法，并且解决了在具有高纵横比的深孔加工中在高纵横比部分缺少开口。在等离子体蚀刻装置中使用图案化并形成在待蚀刻对象上的掩模来蚀刻待蚀刻物体的等离子体蚀刻方法包括：顺序地执行用于蚀刻掩模的第一步骤，同时将沉积物附着在靠近使用碳氟化合物气体CxFy（x = 1,2,3,4,5,6，y = 4,5,6,8）的掩模的掩模图案的表面，以及蚀刻被蚀刻物体的第二步骤同时使用碳氟化合物气体除去附着在开口的侧壁附近的沉积物的掩模图案的表面附近的沉积物。

9. 发明授权

US08809727B2 Heat treatment apparatus 有权
标题翻译：热处理设备
公开(公告)号：US08809727B2
公开(公告)日：2014-08-19
申请号：US13105981
申请日：2011-05-12
申请人： Ken'etsu Yokogawa , Masatoshi Miyake
发明人： Ken'etsu Yokogawa , Masatoshi Miyake
IPC分类号： B23K10/00
CPC分类号： H01J37/32018 , H01J37/32036 , H01J37/32467 , H01J37/32724 , H01J37/32899 , H01L21/67109 , H01L21/6719 , H01L21/68742 , H01L21/68771
摘要： The present invention relates to a heat treatment apparatus that performs activation annealing or defect repair annealing and surface oxidization which succeed impurity doping intended to control the conductive property of a semiconductor substrate. In the present invention, a sample to be heated is placed on a lower electrode in a plasma treatment chamber. A gap between an upper electrode and the lower electrode is filled with a gap whose main raw material is a rare gas (helium, argon, krypton, xenon, or the like) having a pressure close to the atmospheric pressure. A power fed from a high-frequency power supply is applied to the upper electrode in order to induce an atmospheric-pressure glow discharge. Gas heating in the gap between the electrodes, which depends on the glow discharge, is used to heat-treat the sample to be heated.
摘要翻译：本发明涉及一种执行活化退火或缺陷修复退火和表面氧化的热处理设备，该热处理设备接受用于控制半导体衬底的导电性能的杂质掺杂。在本发明中，将待加热的样品放置在等离子体处理室中的下电极上。上部电极和下部电极之间的间隙填充有主要原料是具有接近大气压的压力的稀有气体（氦，氩，氪，氙等）的间隙。从高频电源馈送的电力施加到上电极，以引起大气压辉光放电。电极之间的间隙中的气体加热（其取决于辉光放电）用于热处理待加热的样品。

10. 外观设计

USD595192S1 Bumper of motor vehicle 有权
公开(公告)号：USD595192S1
公开(公告)日：2009-06-30
申请号：US29309673
申请日：2008-09-25
申请人： Kunihiko Kurisu , Akira Tamatani , Kosuke Takahashi , Koji Miyamoto , Masatoshi Miyake , Ryuji Kumagai , Keisuke Nakai , Tomoyuki Suzuki
设计人： Kunihiko Kurisu , Akira Tamatani , Kosuke Takahashi , Koji Miyamoto , Masatoshi Miyake , Ryuji Kumagai , Keisuke Nakai , Tomoyuki Suzuki

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