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    • 4. 发明授权
    • Fuel assembly and nuclear reactor
    • 燃料装配和核反应堆
    • US06445759B1
    • 2002-09-03
    • US09689789
    • 2000-10-13
    • Kouji HiraiwaYamato HayashiYasushi HiranoJun SaekiKazuki HidaJunko Watanabe
    • Kouji HiraiwaYamato HayashiYasushi HiranoJun SaekiKazuki HidaJunko Watanabe
    • G21C300
    • G21C7/04G21C3/326G21Y2002/201G21Y2004/10G21Y2004/30Y02E30/38Y02E30/39
    • A fuel assembly comprises a plurality of fuel rods bundled in grid pattern, a part of the fuel rods containing gadolinium as a burnable poison. At least one of the fuel rod having gadolinium contains gadolinium enriched in at least one kind of isotope of odd mass number more than an isotopic abundance of natural gadolinium. In the enriched gadolinium, a ratio of a content of Gd-155 to that of Gd-157 is 0.1 or less. An average concentration (wt %) G0 of enriched gadolinia is, with M denoting the number of month under rated power operation per one cycle of an equilibrium core, P power density of a nuclear reactor (kw/l unit) and W a sum of isotopic composition, is set in the range shown by the following expression. G0
    • 燃料组件包括多个以栅格图案捆扎的燃料棒,燃料棒的一部分包含钆作为可燃毒物。 具有钆的燃料棒中的至少一个含有富含至少一种比天然钆的同位素丰度高的奇数质量的至少一种同位素的钆。 在富集的钆中,Gd-155与Gd-157的含有率为0.1以下。 富氧钆的平均浓度(wt%)G0,M表示平衡核心每一个循环的额定功率运行下的月数,核反应堆的功率密度(kw / l单位)和W是 同位素组成设定在由下式表示的范围内。因此,在燃料组件中,可以减少循环端的可燃毒物的残留反应性,并且可以提高热性能。在燃料组件的另一方面,a 设置在控制杆侧的区域中的钆氧燃料棒包含富含奇数质量数超过天然同位素丰度的同位素的钆。 富集钆的浓度设定为例如天然钆的一半以下。 因此,氧化钆燃料棒中的易裂变材料(铀)的富集可以大于现有的燃料组件中的裂变材料(铀)的浓缩,钚的平均浓度增加。
    • 6. 发明授权
    • Memory pack
    • 内存包
    • US4245331A
    • 1981-01-13
    • US945124
    • 1978-09-25
    • Koichi HamanoTakao MorimotoJunko WatanabeKaoru OnoNorio Yagi
    • Koichi HamanoTakao MorimotoJunko WatanabeKaoru OnoNorio Yagi
    • G06Q30/00G07F7/02G07G1/12G11C5/06G11C7/00
    • G07F7/02G06Q20/206G06Q30/04G07G1/12
    • A memory pack is provided having a random access memory connected between a positive power source terminal and a ground terminal, an addressing terminal coupled with the random access memory, and a data input/output terminal coupled with the random access memory. The memory pack further includes an LED energizing terminal, a light emission element which is connected between the LED energizing terminal and a positive power source terminal, the LED being lit by an energizing signal applied to the LED energizing terminal, a RAM energizing terminal and a photocoupler which is connected between the RAM energizing terminal and the random access memory and which responds to an energizing signal applied to the RAM energizing terminal to apply an output signal to the random access memory thereby to set the random access memory to be operative.
    • 提供了存储器,其具有连接在正电源端子和接地端子之间的随机存取存储器,与随机存取存储器耦合的寻址端子以及与随机存取存储器耦合的数据输入/输出端子。 存储器还包括LED通电端子,连接在LED通电端子和正电源端子之间的发光元件,LED被施加到LED通电端子的激励信号点亮,RAM通电端子和 光电耦合器,其连接在RAM通电端子和随机存取存储器之间,并且响应于施加到RAM通电端子的激励信号,以将输出信号施加到随机存取存储器,从而将随机存取存储器设置为可操作。
    • 8. 发明授权
    • Method of manufacturing an optical waveguide device
    • 制造光波导器件的方法
    • US5612086A
    • 1997-03-18
    • US256179
    • 1994-06-28
    • Hironao HakogiTakashi YamaneJunko Watanabe
    • Hironao HakogiTakashi YamaneJunko Watanabe
    • G02B6/122B05D5/06
    • G02B6/122
    • Electric discharge breakdown in an optical waveguide pattern formed on a crystal substrate having pyroelectric effect is substantially extinguished or reduced, so that the yield of optical waveguide devices in the manufacturing process can be increased. A plurality of optical waveguide patterns 5 are formed, in parallel, by means of heat treatment on a substrate 2 of lithium niobate having pyroelectric effect, and the formed waveguide patterns are cut into a predetermined chip-shape. In the manufacturing method of this optical waveguide device, patterns are formed so that both ends of the optical waveguide pattern 5 are respectively communicated at a position where both ends of the optical waveguide pattern 5 are out of an effective chip range. Further, a dummy pattern 26 is formed at a position close to a waveguide pattern 25.
    • PCT No.PCT / JP93 / 01565 Sec。 371日期:1994年6月28日 102(e)日期1994年6月28日PCT提交1993年10月28日PCT公布。 公开号WO94 / 10592 日期1994年5月11日在具有热电效应的晶体基板上形成的光波导图案中的电击放电基本上熄灭或减少,从而可以提高制造工艺中的光波导器件的产量。 通过在具有热电效应的铌酸锂的基板2上进行热处理,平行地形成多个光波导图案5,并且将形成的波导图案切割成预定的芯片形状。 在该光波导装置的制造方法中,形成图案,使得光波导图案5的两端分别在光波导图案5的两端处于有效芯片范围之外的位置连通。 此外,在靠近波导图案25的位置处形成虚设图案26。