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1. 发明授权

US5622593A Plasma processing apparatus and method 失效
标题翻译：等离子体处理装置及方法
公开(公告)号：US5622593A
公开(公告)日：1997-04-22
申请号：US658557
申请日：1996-06-05
申请人： Masashi Arasawa , Katsuhiko Ono , Hiroshi Nishikawa , Kazuo Tsuchiya
发明人： Masashi Arasawa , Katsuhiko Ono , Hiroshi Nishikawa , Kazuo Tsuchiya
IPC分类号： H01L21/302 , C23C16/458 , H01J37/32 , H01L21/205 , H01L21/3065 , H01L21/00
CPC分类号： C23C16/466 , C23C16/4586 , H01J37/32431 , H01J2237/2001
摘要： A plasma processing apparatus comprises a first passage opened in a top of suscepter at a peripheral area thereof, a first gas supply source for supplying heat exchange gas into a small clearance between the suscepter and a wafer through the first passage, a first vacuum pump for exhausting the clearance through the first passage, a second passage opened in the top of the suscepter at a center area thereof, a second gas supply source for supplying heat exchange gas into the clearance through the second passage, a second vacuum pump for exhausting the clearance through the second passage, and a controller for controlling the first and second gas supply sources and the first and second vacuum pumps independently of the others in such a way that backpressure caused in the second passage by the second gas supply source and vacuum pump can become lower than backpressure caused in the first passage by the first gas supply source and vacuum pump.
摘要翻译：一种等离子体处理装置，包括：在其周边区域的开口的顶部开口的第一通路;第一气体供给源，其通过第一通路将热交换气体供给到所述容器和晶片之间的小间隙;第一真空泵，通过第一通道排出间隙，第二通道在其中心区域处在容器的顶部开口，第二气体供应源，用于通过第二通道将热交换气体供应到间隙中;第二真空泵，用于排出间隙通过第二通道，以及用于独立于其他方式控制第一和第二气体供给源以及第一和第二真空泵的控制器，使得由第二气体供应源和真空泵在第二通道中产生的背压可以变成低于由第一气体供应源和真空泵在第一通道中引起的背压。

2. 再颁专利

USRE36810E Plasma processing apparatus and method 有权
标题翻译：等离子体处理装置及方法
公开(公告)号：USRE36810E
公开(公告)日：2000-08-08
申请号：US165545
申请日：1998-10-02
申请人： Masashi Arasawa , Katsuhiko Ono , Hiroshi Nishikawa , Kazuo Tsuchiya
发明人： Masashi Arasawa , Katsuhiko Ono , Hiroshi Nishikawa , Kazuo Tsuchiya
IPC分类号： H01L21/302 , C23C16/458 , H01J37/32 , H01L21/205 , H01L21/3065 , H01L21/00
CPC分类号： C23C16/466 , C23C16/4586 , H01J37/32431 , H01J2237/2001
摘要： A plasma processing apparatus comprises a first passage opened in a top of suscepter at a peripheral area thereof, a first gas supply source for supplying heat exchange gas into a small clearance between the suscepter and a wafer through the first passage, a first vacuum pump for exhausting the clearance through the first passage, a second passage opened in the top of the suscepter at a center area thereof, a second gas supply source for supplying heat exchange gas into the clearance through the second passage, a second vacuum pump for exhausting the clearance through the second passage, and a controller for controlling the first and second gas supply sources and the first and second vacuum pumps independently of the others in such a way that backpressure caused in the second passage by the second gas supply source and vacuum pump can become lower than backpressure caused in the first passage by the first gas supply source and vacuum pump.
摘要翻译：一种等离子体处理装置，包括：在其周边区域的开口的顶部开口的第一通路;第一气体供给源，其通过第一通路将热交换气体供给到所述容器和晶片之间的小间隙;第一真空泵，通过第一通道排出间隙，第二通道在其中心区域处在容器的顶部开口，第二气体供应源，用于通过第二通道将热交换气体供应到间隙中;第二真空泵，用于排出间隙通过第二通道，以及用于独立于其他方式控制第一和第二气体供给源以及第一和第二真空泵的控制器，使得由第二气体供应源和真空泵在第二通道中产生的背压可以变成低于由第一气体供应源和真空泵在第一通道中引起的背压。

3. 发明授权

US5547539A Plasma processing apparatus and method 失效
公开(公告)号：US5547539A
公开(公告)日：1996-08-20
申请号：US361579
申请日：1994-12-22
申请人： Masashi Arasawa , Katsuhiko Ono , Hiroshi Nishikawa , Kazuo Tsuchiya
发明人： Masashi Arasawa , Katsuhiko Ono , Hiroshi Nishikawa , Kazuo Tsuchiya
IPC分类号： H01L21/302 , C23C16/458 , H01J37/32 , H01L21/205 , H01L21/3065 , H01L21/00
CPC分类号： C23C16/466 , C23C16/4586 , H01J37/32431 , H01J2237/2001
摘要： A plasma processing apparatus comprises a first passage opened in a top of suscepter at a peripheral area thereof, a first gas supply source for supplying heat exchange gas into a small clearance between the suscepter and a wafer through the first passage, a first vacuum pump for exhausting the clearance through the first passage, a second passage opened in the top of the suscepter at a center area thereof, a second gas supply source for supplying heat exchange gas into the clearance through the second passage, a second vacuum pump for exhausting the clearance through the second passage, and a controller for controlling the first and second gas supply sources and the first and second vacuum pumps independently of the others in such a way that backpressure caused in the second passage by the second gas supply source and vacuum pump can become lower than backpressure caused in the first passage by the first gas supply source and vacuum pump.

4. 发明授权

US5766498A Anisotropic etching method and apparatus 失效
公开(公告)号：US5766498A
公开(公告)日：1998-06-16
申请号：US623737
申请日：1996-03-29
申请人： Masayuki Kojima , Yoshikazu Ito , Kazushi Tomita , Shigeki Tozawa , Shunichi Iimuro , Masashi Arasawa , Eiichi Nishimura
发明人： Masayuki Kojima , Yoshikazu Ito , Kazushi Tomita , Shigeki Tozawa , Shunichi Iimuro , Masashi Arasawa , Eiichi Nishimura
IPC分类号： C23F4/00 , H01J37/32 , H01L21/302 , H01L21/3065
CPC分类号： H01J37/32009 , H01J37/3244 , H01J37/32522 , H01J37/32532 , H01J37/32541 , H01J37/32724 , H01J2237/3345
摘要： A parallel-plate plasma etching apparatus includes a susceptor electrode and a shower electrode which are arranged in a process chamber. A semiconductor wafer is placed on the susceptor electrode. A shower region defined by a plurality of process gas supply holes is formed in the shower electrode. The shower electrode is cooled by a cooling block and causes an effective electrode portion of the shower electrode to have a temperature gradient such that a temperature at the central portion of the effective electrode portion is lower than a temperature at the peripheral portion of the effective electrode portion. The diameter of the shower region is selected to be smaller than the diameter of the wafer by 5 to 25% such that degradation of planar uniformity of a degree of etching anisotropy on the wafer caused by the temperature gradient of the effective electrode portion is compensated for. The diameter of the effective electrode portion is selected to be larger than the size of a wafer by 5 to 35% such that a taper angle of a side wall to be etched formed by etching is set to be 85.degree. to 90.degree..

5. 发明授权

US5445709A Anisotropic etching method and apparatus 失效
标题翻译：各向异性蚀刻方法和装置
公开(公告)号：US5445709A
公开(公告)日：1995-08-29
申请号：US154566
申请日：1993-11-19
申请人： Masayuki Kojima , Yoshikazu Ito , Kazuhsi Tomita , Shigeki Tozawa , Shunichi Iimuro , Masashi Arasawa , Eiichi Nishimura
发明人： Masayuki Kojima , Yoshikazu Ito , Kazuhsi Tomita , Shigeki Tozawa , Shunichi Iimuro , Masashi Arasawa , Eiichi Nishimura
IPC分类号： C23F4/00 , H01J37/32 , H01L21/302 , H01L21/3065 , H01L21/06
CPC分类号： H01J37/32009 , H01J37/3244 , H01J37/32522 , H01J37/32532 , H01J37/32541 , H01J37/32724 , H01J2237/3345
摘要： A parallel-plate plasma etching apparatus includes a susceptor electrode and a shower electrode which are arranged in a process chamber. A semiconductor wafer is placed on the susceptor electrode. A shower region defined by a plurality of process gas supply holes is formed in the shower electrode. The shower electrode is cooled by a cooling block and causes an effective electrode portion of the shower electrode to have a temperature gradient such that a temperature at the central portion of the effective electrode portion is lower than a temperature at the peripheral portion of the effective electrode portion. The diameter of the shower region is selected to be smaller than the diameter of the wafer by 5 to 25% such that degradation of planar uniformity of a degree of etching anisotropy on the wafer caused by the temperature gradient of the effective electrode portion is compensated for. The diameter of the effective electrode portion is selected to be larger than the size of a wafer by 5 to 35% such that a taper angle of a side wall to be etched formed by etching is set to be 85.degree. to 90.degree..
摘要翻译：平行板等离子体蚀刻装置包括布置在处理室中的基座电极和淋浴电极。将半导体晶片放置在基座电极上。在淋浴电极中形成由多个处理气体供给孔限定的淋浴区域。淋浴电极被冷却块冷却，使淋浴电极的有效电极部分具有温度梯度，使得有效电极部分的中心部分的温度低于有效电极周边部分的温度一部分。淋浴区域的直径被选择为小于晶片的直径5至25％，使得由有效电极部分的温度梯度引起的晶片上的蚀刻各向异性程度的平面均匀度的降低被补偿。选择有效电极部分的直径大于晶片的尺寸5至35％，使得通过蚀刻形成的待蚀刻侧壁的锥角设定为85°至90°。

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