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1. 发明授权

US08486605B2 Positive resist composition and method of forming resist pattern 有权
标题翻译：正型抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US08486605B2
公开(公告)日：2013-07-16
申请号：US12691561
申请日：2010-01-21
申请人： Masaru Takeshita , Yasuhiro Yoshii , Jiro Yokoya , Hirokuni Saito , Tsuyoshi Nakamura
发明人： Masaru Takeshita , Yasuhiro Yoshii , Jiro Yokoya , Hirokuni Saito , Tsuyoshi Nakamura
IPC分类号： G03F7/039 , G03F7/095 , G03F7/20 , G03F7/30
CPC分类号： G03F7/0397 , G03F7/0035 , G03F7/0045 , G03F7/0048
摘要： A positive resist composition including: a base material component (A) which exhibits increased solubility in an alkali developing solution under the action of acid; and an acid generator component (B) which generates acid upon exposure; dissolved in an organic solvent (S), wherein the base material component (A) includes a resin component (A1) having 4 types of specific structural units, and the organic solvent (S) includes from 60 to 99% by weight of an alcohol-based organic solvent (S1) and from 1 to 40% by weight of at least one organic solvent (S2) selected from the group consisting of propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether and cyclohexanone.
摘要翻译：一种正型抗蚀剂组合物，包括：在酸性作用下在碱性显影液中表现出增加的溶解度的基材成分（A）和在曝光时产生酸的酸产生剂组分（B）; 溶解在有机溶剂（S）中，其中，所述基材成分（A）含有具有4种特定结构单元的树脂成分（A1），所述有机溶剂（S）含有60〜99重量％的醇的有机溶剂（S1）和1至40重量％的至少一种选自丙二醇单甲醚乙酸酯，丙二醇单甲醚和环己酮的有机溶剂（S2）。

2. 发明授权

US08877432B2 Method of forming resist pattern and resist composition 有权
标题翻译：形成抗蚀剂图案和抗蚀剂组合物的方法
公开(公告)号：US08877432B2
公开(公告)日：2014-11-04
申请号：US13073651
申请日：2011-03-28
申请人： Jiro Yokoya , Tsuyoshi Nakamura , Masaru Takeshita , Yasuhiro Yoshii , Hirokuni Saito
发明人： Jiro Yokoya , Tsuyoshi Nakamura , Masaru Takeshita , Yasuhiro Yoshii , Hirokuni Saito
IPC分类号： G03F7/20 , G03F7/039 , G03F7/038 , G03F7/00 , G03F7/40 , G03F7/004
CPC分类号： G03F7/0035 , G03F7/0045 , G03F7/0382 , G03F7/0397 , G03F7/2041 , G03F7/40
摘要： There are provided a method of forming a resist pattern in which a resist pattern is formed on top of a substrate by using a chemically amplified resist composition and conducting patterning two or more times, the method being capable of reducing the extent of damage, caused by the second patterning, imposed upon the first resist pattern that is formed by the first patterning; as well as a resist composition that is useful for forming the first resist pattern in this method of forming a resist pattern. The method includes forming of a first resist pattern using a resist composition containing a thermal base generator as a chemically amplified resist composition during first patterning, and then conducting a hard bake for baking the first resist pattern under a bake condition such that a base is generated from the thermal base generator, prior to the second patterning.
摘要翻译：提供了一种形成抗蚀剂图案的方法，其中通过使用化学放大型抗蚀剂组合物在基板的顶部上形成抗蚀剂图案并进行图案化两次或更多次，该方法能够减少由...引起的损伤程度施加在由第一图案化形成的第一抗蚀剂图案上的第二图案化; 以及在形成抗蚀剂图案的方法中可用于形成第一抗蚀剂图案的抗蚀剂组合物。该方法包括在第一图案化期间使用含有热碱发生器作为化学放大型抗蚀剂组合物的抗蚀剂组合物形成第一抗蚀剂图案，然后在烘烤条件下进行硬烘烤以烘烤第一抗蚀剂图案，使得产生碱来自热源发生器，在第二图案化之前。

3. 发明申请

US20100190108A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN 有权
标题翻译：正电阻组合物和形成电阻图案的方法
公开(公告)号：US20100190108A1
公开(公告)日：2010-07-29
申请号：US12691561
申请日：2010-01-21
申请人： Masaru Takeshita , Yasuhiro Yoshii , Jiro Yokoya , Hirokuni Saito , Tsuyoshi Nakamura
发明人： Masaru Takeshita , Yasuhiro Yoshii , Jiro Yokoya , Hirokuni Saito , Tsuyoshi Nakamura
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/0397 , G03F7/0035 , G03F7/0045 , G03F7/0048
摘要： A positive resist composition including: a base material component (A) which exhibits increased solubility in an alkali developing solution under the action of acid; and an acid generator component (B) which generates acid upon exposure; dissolved in an organic solvent (S), wherein the base material component (A) includes a resin component (A1) having 4 types of specific structural units, and the organic solvent (S) includes from 60 to 99% by weight of an alcohol-based organic solvent (S1) and from 1 to 40% by weight of at least one organic solvent (S2) selected from the group consisting of propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether and cyclohexanone.
摘要翻译：一种正型抗蚀剂组合物，包括：在酸性作用下在碱性显影液中显示增加的溶解度的基材成分（A）和在曝光时产生酸的酸产生剂组分（B）; 溶解在有机溶剂（S）中，其中，所述基材成分（A）含有具有4种特定结构单元的树脂成分（A1），所述有机溶剂（S）含有60〜99重量％的醇的有机溶剂（S1）和1至40重量％的至少一种选自丙二醇单甲醚乙酸酯，丙二醇单甲醚和环己酮的有机溶剂（S2）。

4. 发明申请

US20130017500A1 METHOD OF FORMING RESIST PATTERN 有权
标题翻译：形成电阻图案的方法
公开(公告)号：US20130017500A1
公开(公告)日：2013-01-17
申请号：US13467549
申请日：2012-05-09
申请人： Jiro Yokoya , Tsuyoshi Nakamura , Hiroaki Shimizu , Masaru Takeshita , Hideto Nito , Hirokuni Saito
发明人： Jiro Yokoya , Tsuyoshi Nakamura , Hiroaki Shimizu , Masaru Takeshita , Hideto Nito , Hirokuni Saito
IPC分类号： G03F7/20
CPC分类号： G03F7/0045 , G03F7/0397 , G03F7/203 , G03F7/2041 , G03F7/26 , G03F7/38
摘要： A method of forming a resist pattern, including forming a resist film on a substrate using a resist composition comprising a base component that exhibits increased solubility in an alkali developing solution and a photo-base generator component; exposing the resist film; baking the exposed resist film, such that, at an exposed portion thereof, the base generated from the photo-base generator component upon the exposure and an acid provided to the resist film are neutralized, and at an unexposed portion of the resist film, the solubility of the base component in an alkali developing solution is increased by the acid provided to the resist film; and subjecting the resist film to alkali development, thereby forming a negative-tone resist pattern in which the unexposed portion of the resist film has been dissolved and removed.
摘要翻译：一种形成抗蚀剂图案的方法，包括使用包含在碱性显影液中显示出增加的溶解度的基础成分的抗蚀剂组合物和光产生剂组分在基材上形成抗蚀剂膜; 曝光抗蚀膜; 烘烤曝光的抗蚀剂膜，使得在曝光部分，曝光时由光产生器部件产生的基底和提供给抗蚀剂膜的酸被中和，并且在抗蚀剂膜的未曝光部分，碱性成分在碱性显影液中的溶解度通过提供于抗蚀剂膜的酸而增加; 并对抗蚀剂膜进行碱显影，从而形成抗蚀剂膜的未曝光部分已被溶解并除去的负色调抗蚀剂图案。

5. 发明授权

US09411224B2 Method of forming resist pattern 有权
标题翻译：形成抗蚀剂图案的方法
公开(公告)号：US09411224B2
公开(公告)日：2016-08-09
申请号：US13467549
申请日：2012-05-09
申请人： Jiro Yokoya , Tsuyoshi Nakamura , Hiroaki Shimizu , Masaru Takeshita , Hideto Nito , Hirokuni Saito
发明人： Jiro Yokoya , Tsuyoshi Nakamura , Hiroaki Shimizu , Masaru Takeshita , Hideto Nito , Hirokuni Saito
IPC分类号： G03F7/22 , G03F7/004 , G03F7/039 , G03F7/20 , G03F7/26 , G03F7/38
CPC分类号： G03F7/0045 , G03F7/0397 , G03F7/203 , G03F7/2041 , G03F7/26 , G03F7/38
摘要： A method of forming a resist pattern, including forming a resist film on a substrate using a resist composition comprising a base component that exhibits increased solubility in an alkali developing solution and a photo-base generator component; exposing the resist film; baking the exposed resist film, such that, at an exposed portion thereof, the base generated from the photo-base generator component upon the exposure and an acid provided to the resist film are neutralized, and at an unexposed portion of the resist film, the solubility of the base component in an alkali developing solution is increased by the acid provided to the resist film; and subjecting the resist film to alkali development, thereby forming a negative-tone resist pattern in which the unexposed portion of the resist film has been dissolved and removed.
摘要翻译：一种形成抗蚀剂图案的方法，包括使用包含在碱性显影液中显示出增加的溶解度的基础成分的抗蚀剂组合物和光产生剂组分在基材上形成抗蚀剂膜; 曝光抗蚀膜; 烘烤曝光的抗蚀剂膜，使得在曝光部分，曝光时由光产生器部件产生的基底和提供给抗蚀剂膜的酸被中和，并且在抗蚀剂膜的未曝光部分，碱性成分在碱性显影液中的溶解度通过提供于抗蚀剂膜的酸而增加; 并对抗蚀剂膜进行碱显影，从而形成抗蚀剂膜的未曝光部分已被溶解并除去的负色调抗蚀剂图案。

6. 发明授权

US09023577B2 Resist composition and method of forming resist pattern 有权
标题翻译：抗蚀剂图案的抗蚀剂组成和方法
公开(公告)号：US09023577B2
公开(公告)日：2015-05-05
申请号：US13346166
申请日：2012-01-09
申请人： Masaru Takeshita , Hirokuni Saito , Jiro Yokoya , Tsuyoshi Nakamura
发明人： Masaru Takeshita , Hirokuni Saito , Jiro Yokoya , Tsuyoshi Nakamura
IPC分类号： G03F7/039 , G03F7/004 , G03F7/20
CPC分类号： G03F7/0048 , G03F7/0397 , G03F7/2041
摘要： A resist composition containing a base component (A) which exhibits changed solubility in a developing solution under the action of acid, and an acid generator component (B) which generates acid upon exposure, dissolved in an organic solvent (S) which contains an alcohol-based solvent, wherein the base component (A) contains a copolymer (A1) that exhibits increased polarity under the action of acid, and the copolymer (A1) is a copolymer in which a structural unit (a2), which is derived from an acrylate ester in which the hydrogen atom bonded to the carbon atom on the α-position may be substituted with a substituent, and includes a lactone-containing cyclic group, is dispersed uniformly within the copolymer molecule.
摘要翻译：一种抗蚀剂组合物，其含有在酸的作用下在显影液中显示出改变的溶解性的基础成分（A）和曝露后产生酸的酸产生剂成分（B），溶解在含有醇的有机溶剂（S）的基础成分（A）含有在酸的作用下显示出极性增加的共聚物（A1），共聚物（A1）是共聚物，其中结构单元（a2）衍生自丙烯酸酯，其中与α-位上的碳原子键合的氢原子可以被取代基取代，并且包括含内酯的环状基团，均匀地分散在共聚物分子内。

7. 发明申请

US20120183899A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN 有权
标题翻译：耐蚀组合物和形成耐力图案的方法
公开(公告)号：US20120183899A1
公开(公告)日：2012-07-19
申请号：US13346166
申请日：2012-01-09
申请人： Masaru Takeshita , Hirokuni Saito , Jiro Yokoya , Tsuyoshi Nakamura
发明人： Masaru Takeshita , Hirokuni Saito , Jiro Yokoya , Tsuyoshi Nakamura
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/0048 , G03F7/0397 , G03F7/2041
摘要： A resist composition containing a base component (A) which exhibits changed solubility in a developing solution under the action of acid, and an acid generator component (B) which generates acid upon exposure, dissolved in an organic solvent (S) which contains an alcohol-based solvent, wherein the base component (A) contains a copolymer (A1) that exhibits increased polarity under the action of acid, and the copolymer (A1) is a copolymer in which a structural unit (a2), which is derived from an acrylate ester in which the hydrogen atom bonded to the carbon atom on the α-position may be substituted with a substituent, and includes a lactone-containing cyclic group, is dispersed uniformly within the copolymer molecule.
摘要翻译：一种抗蚀剂组合物，其含有在酸的作用下在显影液中显示出改变的溶解性的基础成分（A）和曝露后产生酸的酸产生剂成分（B），溶解在含有醇的有机溶剂（S）的基础成分（A）含有在酸的作用下显示出极性增加的共聚物（A1），共聚物（A1）是共聚物，其中结构单元（a2）衍生自丙烯酸酯，其中与α-位上的碳原子键合的氢原子可以被取代基取代，并且包括含内酯的环状基团，均匀地分散在共聚物分子内。

8. 发明授权

US08338075B2 Positive resist composition and method of forming resist pattern 有权
标题翻译：正型抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US08338075B2
公开(公告)日：2012-12-25
申请号：US12534735
申请日：2009-08-03
申请人： Masaru Takeshita , Shinji Kumada , Yasuhiro Yoshii , Takeshi Iwai , Tsuyoshi Nakamura
发明人： Masaru Takeshita , Shinji Kumada , Yasuhiro Yoshii , Takeshi Iwai , Tsuyoshi Nakamura
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/0048 , G03F7/0046 , G03F7/0397 , G03F7/2041
摘要： A positive resist composition including: a base component (A) which exhibits increased solubility in an alkali developing solution under the action of acid; and an acid-generator component (B) which generates acid upon exposure; dissolved in an organic solvent (S), the organic solvent (S) including an alcohol-based organic solvent having a boiling point of at least 150° C.; and a method of forming a resist pattern including: applying the positive resist composition on a substrate on which a first resist pattern is formed to form a second resist film; and subjecting the second resist film to selective exposure and alkali developing to form a resist pattern.
摘要翻译：一种正型抗蚀剂组合物，其包含：在酸的作用下在碱性显影液中显示增加的溶解度的碱成分（A）和在暴露时产生酸的酸发生剂组分（B）; 溶解在有机溶剂（S）中，有机溶剂（S）包括沸点为至少150℃的醇类有机溶剂; 以及形成抗蚀剂图案的方法，包括：将正性抗蚀剂组合物施加在其上形成有第一抗蚀剂图案的基板上以形成第二抗蚀剂膜; 并对第二抗蚀剂膜进行选择性曝光和碱显影以形成抗蚀剂图案。

9. 发明申请

US20100047724A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN 有权
标题翻译：正电阻组合物和形成电阻图案的方法
公开(公告)号：US20100047724A1
公开(公告)日：2010-02-25
申请号：US12534735
申请日：2009-08-03
申请人： Masaru Takeshita , Shinji Kumada , Yasuhiro Yoshii , Takeshi Iwai , Tsuyoshi Nakamura
发明人： Masaru Takeshita , Shinji Kumada , Yasuhiro Yoshii , Takeshi Iwai , Tsuyoshi Nakamura
IPC分类号： G03C1/053 , G03C1/00 , G03F7/00
CPC分类号： G03F7/0048 , G03F7/0046 , G03F7/0397 , G03F7/2041
摘要： A positive resist composition including: a base component (A) which exhibits increased solubility in an alkali developing solution under the action of acid; and an acid-generator component (B) which generates acid upon exposure; dissolved in an organic solvent (S), the organic solvent (S) including an alcohol-based organic solvent having a boiling point of at least 150° C.; and a method of forming a resist pattern including: applying the positive resist composition on a substrate on which a first resist pattern is formed to form a second resist film; and subjecting the second resist film to selective exposure and alkali developing to form a resist pattern.
摘要翻译：一种正型抗蚀剂组合物，其包含：在酸的作用下在碱性显影液中显示增加的溶解度的碱成分（A）和在暴露时产生酸的酸发生剂组分（B）; 溶解在有机溶剂（S）中，有机溶剂（S）包括沸点为至少150℃的醇类有机溶剂; 以及形成抗蚀剂图案的方法，包括：将正性抗蚀剂组合物施加在其上形成有第一抗蚀剂图案的基板上以形成第二抗蚀剂膜; 并对第二抗蚀剂膜进行选择性曝光和碱显影以形成抗蚀剂图案。

10. 发明申请

US20130189618A1 METHOD OF FORMING RESIST PATTERN 有权
标题翻译：形成电阻图案的方法
公开(公告)号：US20130189618A1
公开(公告)日：2013-07-25
申请号：US13614017
申请日：2012-09-13
申请人： Jiro Yokoya , Tsuyoshi Nakamura , Hiroaki Shimizu , Hideto Nito
发明人： Jiro Yokoya , Tsuyoshi Nakamura , Hiroaki Shimizu , Hideto Nito
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/20 , G03F7/004 , G03F7/0045 , G03F7/0397 , G03F7/38
摘要： A method of forming a resist pattern, including: step (1) in which a resist composition including a base component, a photobase generator component and an acid supply component is applied to a substrate to form a resist film; step (2) in which the resist film is subjected to exposure without being subjected to prebaking; step (3) in which baking is conducted after step (2), such that, at an exposed portion of the resist film, the base generated from the photobase generator component upon the exposure and an acid derived from the acid supply component are neutralized, and at an unexposed portion of the resist film, the solubility of the base component in an alkali developing solution is increased by the action of the acid derived from the acid supply component; and step (4) in which the resist film is subjected to an alkali development, thereby forming a negative-tone resist pattern.
摘要翻译：一种形成抗蚀剂图案的方法，包括：步骤（1），其中将包含基底组分，光碱产生剂组分和酸供应组分的抗蚀剂组合物施加到基底上以形成抗蚀剂膜; 步骤（2），其中抗蚀剂膜经受曝光而不经受预烘烤; 步骤（3），其中在步骤（2）之后进行烘烤，使得在抗蚀剂膜的暴露部分，曝光时由光产生剂组分产生的碱和源自酸供应组分的酸被中和，并且在抗蚀剂膜的未曝光部分，通过来自酸供应成分的酸的作用，碱成分在碱性显影液中的溶解度增加; 和步骤（4），其中抗蚀剂膜经受碱显影，从而形成负色调抗蚀剂图案。

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