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    • 1. 发明申请
    • METHOD OF FORMING RESIST PATTERN AND NEGATIVE TONE-DEVELOPMENT RESIST COMPOSITION
    • 形成电阻图案和负极色调发展电阻组合物的方法
    • US20120276481A1
    • 2012-11-01
    • US13456768
    • 2012-04-26
    • Hiroaki ShimizuHideto Nito
    • Hiroaki ShimizuHideto Nito
    • G03F7/20G03F7/004
    • G03F7/325G03F7/0046G03F7/0397G03F7/11G03F7/2041
    • A method of forming a resist pattern, the method including: forming a resist film on a substrate using a resist composition containing a base component (A) that exhibits reduced solubility in an organic solvent under the action of acid, an acid generator component (B) that generates acid upon exposure and a fluorine-containing polymeric compound (F), exposing the resist film, and patterning the resist film by negative tone development using a developing solution containing the organic solvent, thereby forming a resist pattern, wherein the base component (A) contains a resin component (A1) containing a structural unit (a1) derived from an acrylate ester, the dissolution rates of (A1) and (F) in the developing solution are each at least 10 nm/s, and the absolute value of the difference in the dissolution rates of (A1) and (F) in the developing solution is not more than 80 nm/s.
    • 一种形成抗蚀剂图案的方法,该方法包括:使用含有在酸作用下在有机溶剂中显示降低的溶解度的碱成分(A)的抗蚀剂组合物在基材上形成抗蚀剂膜,酸产生剂组分(B ),暴露出含氟聚合物(F),曝光抗蚀剂膜,并使用含有有机溶剂的显影溶液通过负色调显影对抗蚀剂膜进行图案化,从而形成抗蚀剂图案,其中基础组分 (A)含有含有由丙烯酸酯衍生的结构单元(a1)的树脂成分(A1),显影液中(A1)和(F)的溶解速度分别为10nm / s以上,绝对值 显影液中(A1)和(F)的溶解速度差的值不大于80nm / s。
    • 6. 发明申请
    • METHOD OF FORMING RESIST PATTERN
    • 形成电阻图案的方法
    • US20130189618A1
    • 2013-07-25
    • US13614017
    • 2012-09-13
    • Jiro YokoyaTsuyoshi NakamuraHiroaki ShimizuHideto Nito
    • Jiro YokoyaTsuyoshi NakamuraHiroaki ShimizuHideto Nito
    • G03F7/20G03F7/004
    • G03F7/20G03F7/004G03F7/0045G03F7/0397G03F7/38
    • A method of forming a resist pattern, including: step (1) in which a resist composition including a base component, a photobase generator component and an acid supply component is applied to a substrate to form a resist film; step (2) in which the resist film is subjected to exposure without being subjected to prebaking; step (3) in which baking is conducted after step (2), such that, at an exposed portion of the resist film, the base generated from the photobase generator component upon the exposure and an acid derived from the acid supply component are neutralized, and at an unexposed portion of the resist film, the solubility of the base component in an alkali developing solution is increased by the action of the acid derived from the acid supply component; and step (4) in which the resist film is subjected to an alkali development, thereby forming a negative-tone resist pattern.
    • 一种形成抗蚀剂图案的方法,包括:步骤(1),其中将包含基底组分,光碱产生剂组分和酸供应组分的抗蚀剂组合物施加到基底上以形成抗蚀剂膜; 步骤(2),其中抗蚀剂膜经受曝光而不经受预烘烤; 步骤(3),其中在步骤(2)之后进行烘烤,使得在抗蚀剂膜的暴露部分,曝光时由光产生剂组分产生的碱和源自酸供应组分的酸被中和, 并且在抗蚀剂膜的未曝光部分,通过来自酸供应成分的酸的作用,碱成分在碱性显影液中的溶解度增加; 和步骤(4),其中抗蚀剂膜经受碱显影,从而形成负色调抗蚀剂图案。
    • 8. 发明授权
    • Method of forming resist pattern
    • 形成抗蚀剂图案的方法
    • US08968990B2
    • 2015-03-03
    • US13614017
    • 2012-09-13
    • Jiro YokoyaTsuyoshi NakamuraHiroaki ShimizuHideto Nito
    • Jiro YokoyaTsuyoshi NakamuraHiroaki ShimizuHideto Nito
    • G03F7/26G03F7/20G03F7/004G03F7/38G03F7/039
    • G03F7/20G03F7/004G03F7/0045G03F7/0397G03F7/38
    • A method of forming a resist pattern, including: step (1) in which a resist composition including a base component, a photobase generator component and an acid supply component is applied to a substrate to form a resist film; step (2) in which the resist film is subjected to exposure without being subjected to prebaking; step (3) in which baking is conducted after step (2), such that, at an exposed portion of the resist film, the base generated from the photobase generator component upon the exposure and an acid derived from the acid supply component are neutralized, and at an unexposed portion of the resist film, the solubility of the base component in an alkali developing solution is increased by the action of the acid derived from the acid supply component; and step (4) in which the resist film is subjected to an alkali development, thereby forming a negative-tone resist pattern.
    • 一种形成抗蚀剂图案的方法,包括:步骤(1),其中将包含基底组分,光碱产生剂组分和酸供应组分的抗蚀剂组合物施加到基底上以形成抗蚀剂膜; 步骤(2),其中抗蚀剂膜经受曝光而不经受预烘烤; 步骤(3),其中在步骤(2)之后进行烘烤,使得在抗蚀剂膜的暴露部分,曝光时由光产生剂组分产生的碱和源自酸供应组分的酸被中和, 并且在抗蚀剂膜的未曝光部分,通过来自酸供应成分的酸的作用,碱成分在碱性显影液中的溶解度增加; 和步骤(4),其中抗蚀剂膜经受碱显影,从而形成负色调抗蚀剂图案。