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1. 发明授权

US5332442A Surface processing apparatus 失效
标题翻译：表面处理装置
公开(公告)号：US5332442A
公开(公告)日：1994-07-26
申请号：US973915
申请日：1992-11-12
申请人： Masao Kubodera , Masaki Narushima , Masahito Ozawa , Hiromi Kumagai , Tomihiro Yonenaga , Sumi Tanaka
发明人： Masao Kubodera , Masaki Narushima , Masahito Ozawa , Hiromi Kumagai , Tomihiro Yonenaga , Sumi Tanaka
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , C23C16/48 , C30B25/10 , C30B31/20 , H01L21/00 , C23C16/00
CPC分类号： C23C16/45512 , C23C16/4584 , C23C16/481 , C30B25/105 , C30B31/20 , H01L21/67017 , H01L21/67115
摘要： The present invention relates to a surface processing apparatus which performs heating processing of an object of heating which is mounted on a mounting device provided inside a process container, and which includes a plural number of lamps provided so as to oppose a rear surface of a processing surface of an object of processing, a rotating unit which has the plural number of lamps mounted to it in a ring shape, and a drive unit which drives the rotating unit. Also, the present invention relates to a processing apparatus for leading a process gas from a gas supply tube to a gas chamber partitioned inside a process container, and which blows process gas from an outlet of the gas chamber and onto an object of processing which is mounted on a mounting device provided inside the process container, and which includes a plural number of partition plates each provided with a plural number of through holes, being provided at required intervals in a direction of gas flow and inside the gas chamber.
摘要翻译：本发明涉及一种对加热对象进行加热处理的表面处理装置，该加热处理装置安装在设置在处理容器内部的安装装置上，并且包括多个设置成与处理容器的后表面相对的灯处理对象的表面，具有安装在环状的多个灯的旋转单元和驱动旋转单元的驱动单元。本发明还涉及一种处理装置，用于将处理气体从气体供给管引导到在处理容器内分隔的气体室，并且将处理气体从气体室的出口吹送到处理对象物上，安装在设置在处理容器内部的安装装置上，并且包括多个分隔板，每个分隔件设置有多个通孔，沿气流方向和气室内部需要间隔设置。

2. 发明授权

US5972114A Film deposition apparatus with anti-adhesion film and chamber cooling means 失效
标题翻译：具有防粘膜和室冷却装置的成膜装置
公开(公告)号：US5972114A
公开(公告)日：1999-10-26
申请号：US610860
申请日：1996-03-05
申请人： Tomihiro Yonenaga , Mitsuhiro Tachibana , Sumi Tanaka
发明人： Tomihiro Yonenaga , Mitsuhiro Tachibana , Sumi Tanaka
IPC分类号： C23C16/44 , C23C16/455 , C23C16/48 , H01L21/205 , H01L21/285 , C23C16/00
CPC分类号： C23C16/45565 , C23C16/4404 , C23C16/45572 , C23C16/481
摘要： An anti-adhesion film, which is difficult for the deposited film to adhere thereto, is formed on the inner surface of a process chamber. A process gas is supplied from a gas supply unit to that position in the process chamber which is opposed to a table, whereupon a metal film or metallic compound film is deposited on the surface of the object. In the film deposition process, the anti-adhesion film serves considerably to reduce the build-up of the metal film deposited on the inner surface of the process chamber, especially that surface of the gas supply unit which is opposed to the table. Although at least a maintenance operation such as wet cleaning is necessary, therefore, the frequency of such operation can be lowered substantially, so that the operating efficiency of the apparatus can be improved.
摘要翻译：在处理室的内表面上形成有难以沉积的膜粘附的防粘附膜。处理气体从气体供给单元供给到与工作台相对的处理室中的位置，于是金属膜或金属化合物膜沉积在物体的表面上。在薄膜沉积工艺中，防粘附膜用于显着地减少沉积在处理室内表面上的金属膜的积聚，特别是气体供给单元与表相对的表面。尽管至少需要诸如湿式清洁的维护操作，但是可以大大降低这种操作的频率，从而可以提高设备的操作效率。

3. 发明授权

US5525160A Film deposition processing device having transparent support and transfer pins 失效
标题翻译：具有透明支撑和传输销的膜沉积处理装置
公开(公告)号：US5525160A
公开(公告)日：1996-06-11
申请号：US237369
申请日：1994-05-03
申请人： Sumi Tanaka , Yuichiro Fujikawa , Tomihiro Yonenaga , Hideki Lee
发明人： Sumi Tanaka , Yuichiro Fujikawa , Tomihiro Yonenaga , Hideki Lee
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , C23C16/48 , C23C16/54 , C23C16/00
CPC分类号： C23C16/45521 , C23C16/4401 , C23C16/455 , C23C16/45568 , C23C16/4583 , C23C16/481 , C23C16/54
摘要： A processing chamber having a heating device for heating the interior thereof to a required temperature, and a holding device with at least three separate holding elements is disclosed. A processing gas feed port and processing gas passages are provided in a cap which is connected to a processing chamber and closes an opening in the upper surface of the processing chamber, and the processing gas feed port and the processing gas passages are connected by a connection pipe. The processing chamber is connected to processing gas sources and has processing gas introduction passages formed in a side wall thereof and communicated with the processing gas passages. Seal members are provided around open ends of either of the processing gas passages or the processing gas introduction passages in the surfaces of the processing chamber and the cap opposed to each other. Thus generation of particles can be precluded in the processing gas feed unit, and smooth supply of processing gases, improved yields and throughputs, and easy maintenance operation can be attained.
摘要翻译：一种处理室，其具有用于将其内部加热至所需温度的加热装置，以及具有至少三个分离的保持元件的保持装置。处理气体供给口和加工用气体通路设置在与处理室连接并关闭处理室的上表面的开口的盖中，处理气体供给口和处理气体通路通过连接管。处理室与处理气体源连接，并且在其侧壁上形成有与处理气体通道连通的处理气体导入通道。密封构件设置在相互相对的处理室和盖的表面中的处理气体通道或处理气体引入通道中的任一个的开口端周围。因此，可以在处理气体供给单元中排除颗粒的产生，可以获得平滑的加工气体的供给，提高的产量和生产量以及容易的维护操作。

4. 发明授权

US08674273B2 Heat treatment apparatus 有权
标题翻译：热处理设备
公开(公告)号：US08674273B2
公开(公告)日：2014-03-18
申请号：US13040697
申请日：2011-03-04
申请人： Tomihiro Yonenaga , Yumiko Kawano
发明人： Tomihiro Yonenaga , Yumiko Kawano
IPC分类号： H05B6/10 , C23C16/00
CPC分类号： C23C16/46 , H01L21/67109 , H05B6/105 , H05B6/365 , H05B6/44
摘要： Provided is a heat treatment apparatus which, when simultaneously heating substrates placed on susceptors, is capable of controlling the uniformity of temperature within each substrate. The heat treatment apparatus includes: a reaction tube which performs predetermined treatment to wafers; a plurality of susceptors each of which has a mounting surface for mounting the wafer and is made of a conductive material; a rotatable quartz boat wherein the susceptors spaced apart in a direction perpendicular to the mounting surfaces are arranged and supported in the reaction tube; a magnetic field generating unit which is arranged on a sidewall of the processing chamber and includes a pair of electromagnets which generate an AC magnetic field in a direction parallel to the mounting surfaces of the susceptors and inductively heat the susceptors; and a control unit which controls the AC magnetic field generated by the magnetic field generating unit.
摘要翻译：提供一种热处理装置，当同时加热放置在基座上的基板时，能够控制每个基板内的温度均匀性。热处理装置包括：对晶片进行预定处理的反应管; 多个感受体具有用于安装晶片并由导电材料制成的安装表面; 一个可旋转的石英舟，其中在垂直于安装表面的方向间隔开的基座被布置和支撑在反应管中; 磁场产生单元，其布置在所述处理室的侧壁上，并且包括一对电磁体，所述一对电磁体在平行于所述基座的安装表面的方向上产生交流磁场并感应加热所述基座; 以及控制单元，其控制由磁场产生单元产生的交流磁场。

5. 发明授权

US5711815A Film forming apparatus and film forming method 失效
标题翻译：成膜装置及成膜方法
公开(公告)号：US5711815A
公开(公告)日：1998-01-27
申请号：US669802
申请日：1996-06-27
申请人： Hideki Lee , Tomihiro Yonenaga
发明人： Hideki Lee , Tomihiro Yonenaga
IPC分类号： C23C16/44 , C23C16/455 , H01L21/205 , C23C16/00
CPC分类号： C23C16/455 , C23C16/45521
摘要： A film forming apparatus includes: a chamber for housing a semiconductor wafer having a surface on which a film is to be formed, and performing a film formation process with respect to the semiconductor wafer; a process gas supply system for supplying a process gas for forming the film onto the surface of the semiconductor wafer on which the film is to be formed; a heater for heating the semiconductor wafer to decompose a film forming gas, thereby forming the film on the wafer; a purge gas supply system for supplying a purge gas from a lower surface side of the surface of the semiconductor wafer on which the film is to be formed toward a peripheral edge portion of the semiconductor wafer; and a ring member positioned at a position to cover a peripheral edge portion of the surface on which the film is to be formed when film formation is to be performed with respect to the semiconductor wafer, the ring member having an outer edge projecting from an outer edge of the target object in the film formation. A flow path in which substantially all the purge gas flows outward from the target object is formed by the ring member.
摘要翻译：一种成膜装置，包括：用于容纳半导体晶片的室，其具有将要形成膜的表面，并对半导体晶片进行成膜处理; 一种工艺气体供应系统，用于将膜形成工艺气体提供到要形成薄膜的半导体晶片的表面上; 用于加热半导体晶片以分解成膜气体的加热器，从而在晶片上形成膜; 吹扫气体供给系统，用于从半导体晶片的要形成的半导体晶片的表面的下表面侧向半导体晶片的周缘部提供净化气体; 以及环形构件，所述环构件定位在覆盖要在要形成所述膜的表面的周缘部分的位置，所述环构件将相对于所述半导体晶片进行成膜时，所述环构件具有从外部突出的外边缘胶片形成中的目标物体的边缘。其中基本上所有的清除气体从目标物体向外流动的流动路径由环形构件形成。

6. 发明授权

US06436193B1 Gas processing apparatus baffle member, and gas processing method 有权
标题翻译：气体处理装置挡板构件，气体处理方法
公开(公告)号：US06436193B1
公开(公告)日：2002-08-20
申请号：US09534342
申请日：2000-03-24
申请人： Shigeru Kasai , Teruo Iwata , Taro Komiya , Tomihiro Yonenaga
发明人： Shigeru Kasai , Teruo Iwata , Taro Komiya , Tomihiro Yonenaga
IPC分类号： C23C1600
CPC分类号： C23C16/45565 , C23C16/455 , C23C16/45514 , H01J37/3244
摘要： A gas processing apparatus is disclosed, that comprises a processing chamber that is airtightly structured, a gas delivery pipe connected to the processing chamber, a gas supply source for supplying gas to the processing chamber through the gas delivery pipe, a holding table for holding a workpiece loaded to the processing chamber, a shower member disposed at a gas outlet of the gas delivery pipe connected to the processing chamber, a spray plate structured as a partition wall of the shower member that faces the holding plate, the spray plate having a plurality of spray holes, and a baffle member disposed between the spray plate in the shower member and the gas outlet and having a plurality of through-holes formed perpendicular to the surface of the baffle member, wherein each of the through-holes of the baffle member has a first opening portion and a second opening portion facing the gas outlet, the second opening portion facing the spray plate, the opening area of the second opening portion being larger than the opening portion of the first opening portion. Thus, a gas processing apparatus and a gas processing method that allow gas to be uniformly supplied to the entire surface of a workpiece are provided. In addition, a baffle member for use with the gas processing apparatus and the gas processing method is provided.
摘要翻译：公开了一种气体处理装置，其包括气密结构的处理室，连接到处理室的气体输送管，用于通过气体输送管向处理室供应气体的气体供给源，用于保持装载到处理室的工件，设置在连接到处理室的气体输送管的气体出口处的喷淋构件，构成为与保持板相对的淋浴构件的分隔壁的喷射板，喷射板具有多个的喷孔，以及设置在淋浴构件中的喷射板和气体出口之间的挡板构件，并且具有垂直于挡板构件的表面形成的多个通孔，其中挡板构件的每个通孔具有面向气体出口的第一开口部分和第二开口部分，面向喷射板的第二开口部分，第二开口的开口区域部分大于第一开口部分的开口部分。因此，提供了允许气体均匀地供应到工件的整个表面的气体处理装置和气体处理方法。此外，提供了一种与气体处理装置一起使用的挡板部件和气体处理方法。

7. 发明授权

US07648610B2 Baffle plate, apparatus for producing the same, method of producing the same, and gas processing apparatus containing baffle plate 失效
标题翻译：挡板，其制造方法，制造方法以及包含挡板的气体处理装置
公开(公告)号：US07648610B2
公开(公告)日：2010-01-19
申请号：US10168451
申请日：2000-12-21
申请人： Taro Komiya , Hatsuo Osada , Shigetoshi Hosaka , Tomihiro Yonenaga , Masayuki Tomoyasu
发明人： Taro Komiya , Hatsuo Osada , Shigetoshi Hosaka , Tomihiro Yonenaga , Masayuki Tomoyasu
IPC分类号： H01L21/3065 , H01L21/306 , C23C16/00 , C23C16/455
CPC分类号： H01J37/32449 , B01J2219/00777 , C23C16/4412 , C23C16/45591 , H01J37/3244 , H01J37/32834
摘要： The present invention provides a gas process apparatus that realizes uniform exhaust without depending on process conditions, a gas process chamber that constitutes the gas process apparatus, a baffle plate mounted on the gas process chamber, a method of producing the baffle plate, and an apparatus for producing the baffle plate. The baffle plate of the present invention serves as a partition between a process space in which a chemical process is carried out with a supplied gas, and a duct that is adjacent to the process space and functions to discharge exhaust gas generated as a result of the chemical process. In accordance with the difference between the pressures on both sides of the baffle plate, which difference varies depending on the location on the baffle plate, the baffle holes are disposed on a plurality of locations on the baffle plate.
摘要翻译：本发明提供了一种不依赖于工艺条件实现均匀排气的气体处理装置，构成气体处理装置的气体处理室，安装在气体处理室上的挡板，制造挡板的方法，以及装置用于制造挡板。本发明的挡板用作在其中进行化学处理的处理空间与供给的气体之间的隔板以及与处理空间相邻的管道，并且其功能是排出由于化学过程。根据挡板两侧的压力差，该差异根据挡板上的位置而变化，挡板孔设置在挡板上的多个位置上。

8. 发明授权

US08658951B2 Heat treatment apparatus 有权
标题翻译：热处理设备
公开(公告)号：US08658951B2
公开(公告)日：2014-02-25
申请号：US13092650
申请日：2011-04-22
申请人： Tomihiro Yonenaga , Yumiko Kawano
发明人： Tomihiro Yonenaga , Yumiko Kawano
IPC分类号： H05B6/10
CPC分类号： H01L21/67109 , H01L21/67303
摘要： In-plane temperature of each substrate is uniformly controlled at the time of heating substrates placed on a plurality of susceptors, respectively. A heat treatment apparatus is provided with susceptors, i.e., conductive members for placing wafers thereon, having an induction heating body electrically divided into a center portion thereof and a peripheral portion thereof; a quartz boat supporting the susceptors arranged in a row; an induction coil, which is arranged inside a processing chamber to surround the circumference of each of the susceptors and configured such that the temperature of the induction coil can be freely adjusted; and a control unit which performs temperature control by changing the ratio between heat value at the center portion of the induction heating body and that at the peripheral portion, by controlling two high frequency currents of different frequencies to be applied to the induction coil from a high frequency current circuit.
摘要翻译：在分别加热放置在多个基座上的基板时，均匀地控制每个基板的面内温度。一种热处理设备设置有基座，即用于在其上放置晶片的导电构件，具有电分割成其中心部分的感应加热体及其周边部分; 支撑排列成一排的基座的石英舟; 感应线圈，其布置在处理室内部以围绕每个基座的圆周并且被配置为使得感应线圈的温度可以自由地调节; 以及控制单元，其通过改变感应加热体的中心部分的热值与周边部分的热值之比，通过从高电平控制施加到感应线圈的不同频率的两个高频电流来进行温度控制频率电流电路。

9. 发明申请

US20110210117A1 HEAT TREATMENT APPARATUS 有权
标题翻译：热处理设备
公开(公告)号：US20110210117A1
公开(公告)日：2011-09-01
申请号：US13040697
申请日：2011-03-04
申请人： Tomihiro Yonenaga , Yumiko Kawano
发明人： Tomihiro Yonenaga , Yumiko Kawano
IPC分类号： H05B6/10
CPC分类号： C23C16/46 , H01L21/67109 , H05B6/105 , H05B6/365 , H05B6/44
摘要： Provided is a heat treatment apparatus which, when simultaneously heating substrates placed on susceptors, is capable of controlling the uniformity of temperature within each substrate. The heat treatment apparatus includes: a reaction tube which performs predetermined treatment to wafers; a plurality of susceptors each of which has a mounting surface for mounting the wafer and is made of a conductive material; a rotatable quartz boat wherein the susceptors spaced apart in a direction perpendicular to the mounting surfaces are arranged and supported in the reaction tube; a magnetic field generating unit which is arranged on a sidewall of the processing chamber and includes a pair of electromagnets which generate an AC magnetic field in a direction parallel to the mounting surfaces of the susceptors and inductively heat the susceptors; and a control unit which controls the AC magnetic field generated by the magnetic field generating unit.
摘要翻译：提供一种热处理装置，当同时加热放置在基座上的基板时，能够控制每个基板内的温度均匀性。热处理装置包括：对晶片进行预定处理的反应管; 多个感受体具有用于安装晶片并由导电材料制成的安装表面; 一个可旋转的石英舟，其中在垂直于安装表面的方向间隔开的基座被布置和支撑在反应管中; 磁场产生单元，其布置在所述处理室的侧壁上，并且包括一对电磁体，所述一对电磁体在平行于所述基座的安装表面的方向上产生交流磁场并感应加热所述基座; 以及控制单元，其控制由磁场产生单元产生的交流磁场。

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