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1. 发明授权

US5102043A Method and apparatus for producing snow using ultrasonic waves 失效
标题翻译：使用超声波生产雪的方法和装置
公开(公告)号：US5102043A
公开(公告)日：1992-04-07
申请号：US661709
申请日：1991-02-26
申请人： Masanori Inoue , Susumu Kishi , Koji Ishihara , Akira Hagiwara
发明人： Masanori Inoue , Susumu Kishi , Koji Ishihara , Akira Hagiwara
IPC分类号： B01J19/10 , F25C3/04 , G10K11/26 , G10K13/00
CPC分类号： F25C3/04 , B01J19/10 , G10K11/26 , G10K13/00 , F25C2303/044 , F25C2303/0481
摘要： A method for producing snow comprises producing a group of waterdrops by jetting water or water together with compressed air from a nozzle into the atmosphere of 0.degree. C. or less, and freezing the group of waterdrops jetted by applying ultrasonic waves to the group of waterdrops. An apparatus for producing snow comprises a jetting apparatus for producing a group of waterdrops by jetting water or water together with compressed air into the atmosphere of 0.degree. C. or less, and an ultrasonic wave generator for applying ultrasonic waves to the group of waterdrops jetted by the jetting apparatus.
摘要翻译：一种生产雪的方法包括通过将水或水与压缩空气一起从喷嘴喷射到0℃或更低的气氛中来产生一组水滴，并将通过施加超声波喷射的一组水滴冻结到一组水滴。一种用于生产雪的装置包括：喷射装置，通过将水或水与压缩空气一起喷射到0℃或更低的气氛中来产生一组水滴;以及超声波发生器，用于向喷射的一组水滴施加超声波通过喷射装置。

2. 发明授权

US5199815A Floor structure for indoor artificial skiing ground 失效
标题翻译：室内人造滑雪场地板结构
公开(公告)号：US5199815A
公开(公告)日：1993-04-06
申请号：US722330
申请日：1991-07-02
申请人： Masanori Inoue , Susumu Kishi
发明人： Masanori Inoue , Susumu Kishi
IPC分类号： E01C13/12
CPC分类号： E01C13/12
摘要： A floor structure for indoor artificial skiing ground comprises, a concrete base plate constructed on foundations, a first waterproof covering disposed on the base plate, a heat insulation layer located on the first waterproof covering, a second waterproof covering disposed on the heat insulation layer, a concrete pressing plate location on the second waterproof covering, and a plurality of drainage grooves formed on top of the pressing plate.Another floor structure for indoor artificial skiing ground comprises, a concrete base plate constructed on foundations, a first waterproof covering disposed on the base plate, a heat insulation layer located on the first waterproof covering, a second waterproof covering disposed on the heat insulation layer, and a slip preventive layer located on the second waterproof covering.
摘要翻译：室内人造滑雪地板的地板结构包括：基座构成的混凝土基板，设置在基板上的第一防水罩，位于第一防水罩上的隔热层，设置在隔热层上的第二防水罩，在第二防水覆盖物上的混凝土压板位置，以及形成在压板顶部的多个排水槽。室内人造滑雪场的另一楼层结构包括：基座构成的混凝土基板，设置在基板上的第一防水罩，位于第一防水罩上的绝热层，设置在隔热层上的第二防水罩，以及位于第二防水罩上的防滑层。

3. 发明授权

US5102044A Method for producing snow and apparatus therefor 失效
标题翻译：生产雪花及其装置的方法
公开(公告)号：US5102044A
公开(公告)日：1992-04-07
申请号：US655219
申请日：1991-02-12
申请人： Masanori Inoue , Susumu Kishi , Katsutoshi Harima
发明人： Masanori Inoue , Susumu Kishi , Katsutoshi Harima
IPC分类号： F25C3/04
CPC分类号： F25C3/04 , F25C2303/0481
摘要： A method for artificially producing snow, which is used for an indoor skiing facility. The method comprises maintaining an inside temperature of the indoor skiing facility of 0.degree. C. or less and blowing air and water with an air-water ratio of 300 to 3000 Nm.sup.3 /m.sup.3 in volume from a plurality of two-fluid spraying nozzles to generate and spread waterdrops of a particle size of 5 to 200 .mu.m, into the indoor skiing facility. The spray nozzles are disposed adjacent an upper portion of a cover enclosure of the indoor skiing facility. An apparatus for artificially producing snow. The apparatus comprising an indoor skiing facility having a floor and a cover enclosure comprising a ceiling and side walls. The cover enclosure and the floor are made from an insulating material. Holes are provided for blowing cold air into the indoor skiing facilities. The holes for blowing air are disposed adjacent an upper portion of the cover enclosure. Holes are provided for exhausting air from the indoor skiing facilities. The holes for exhausting air are disposed adjacent a comparatively lower portion of the side walls of the cover enclosure. A plurality of two-fluid spray nozzles are provided for blowing air and water into the indoor skiing facilities. The spray nozzles are disposed adjacent the upper portion of the cover enclosure.
摘要翻译：一种人造雪的方法，用于室内滑雪设备。该方法包括将室内滑雪设备的内部温度保持在0℃以下，并且从多个二流体喷嘴喷射空气和水，空气和水的体积比为300〜3000Nm 3 / m 3，以产生并将粒径为5〜200μm的水滴散布到室内滑雪设备中。这些喷嘴设置在室内滑雪设备的盖罩的上部附近。一种用于人造雪的装置。该装置包括具有地板的室内滑雪设备和包括天花板和侧壁的盖罩。盖罩和地板由绝缘材料制成。提供用于将冷空气吹入室内滑雪设施的孔。用于吹送空气的孔邻近盖罩的上部设置。提供孔用于从室内滑雪设备排出空气。用于排出空气的孔邻近盖罩的侧壁的相对较低的部分设置。提供多个双流体喷嘴，用于将空气和水吹入室内滑雪设备。喷嘴靠近盖罩的上部设置。

4. 发明授权

US5526214A Short-circuit protective circuit and power darlington transistor module 失效
标题翻译：短路保护电路和功率达林顿晶体管模块
公开(公告)号：US5526214A
公开(公告)日：1996-06-11
申请号：US127609
申请日：1993-09-28
申请人： Ikunori Takata , Masanori Inoue
发明人： Ikunori Takata , Masanori Inoue
IPC分类号： H01L29/73 , H01L21/331 , H03K17/08 , H03K17/082 , H03K17/615 , H02H7/20 , H02H9/04
CPC分类号： H03K17/0826 , H03K17/615
摘要： The present invention is directed to effectively prevent "load short-circuit breakdown" of a power Darlington transistor. When a potential different between a base BX and emitter E at a final stage of a power Darlington transistor (20) is at a specified level of voltage determined by base-emitter forward voltage of a protective bipolar transistor (32), the protective bipolar transistor (32) turns on, and accordingly, base current I.sub.B at an initial stage of the power Darlington transistor (20) is bypassed to the emitter E at the final stage. Hence, excessive rising of collector current I.sub.C of the Darlington transistor (20) is suppressed, and "load short-circuit breakdown" is prevented. The potential difference does not depend upon the number of stages of the Darlington transistor nor temperature, and therefore, it is facilitated for Darlington transistors of various numbers of stages to design a short-circuit protective circuit to ensure a specified bypass operation in the whole range of working temperature.
摘要翻译：本发明旨在有效地防止功率达林顿晶体管的“负载短路故障”。当功率达林顿晶体管（20）的最后级的基极BX和发射极E之间的电位处于由保护双极晶体管（32）的基极 - 发射极正向电压确定的电压的指定电平时，保护双极晶体管（32）导通，因此，在最终阶段，在功率达林顿晶体管（20）的初始阶段的基极电流IB被旁路到发射极E. 因此，抑制了达林顿晶体管（20）的集电极电流IC的过度上升，并且防止了“负载短路击穿”。电位差不取决于达林顿晶体管的级数和温度，因此，为各种级数的达林顿晶体管设计短路保护电路，以便在整个范围内确保指定的旁路工作，的工作温度。

5. 发明授权

US06989535B2 Atomic force microscopy, method of measuring surface configuration using the same, and method of producing magnetic recording medium 失效
公开(公告)号：US06989535B2
公开(公告)日：2006-01-24
申请号：US10309278
申请日：2002-12-04
申请人： Hiroshi Tani , Yoko Ogawa , Masanori Inoue , Takaaki Shirakura , Koji Sonoda
发明人： Hiroshi Tani , Yoko Ogawa , Masanori Inoue , Takaaki Shirakura , Koji Sonoda
IPC分类号： G01N23/00
CPC分类号： G01Q60/38 , G11B5/8408 , Y10S977/852
摘要： To provide an atomic force microscopy which allows the measurement of the configuration of a surface being measured by using the phenomenon observed between the surface being measured and a probe approaching thereto at very fine distance.By selecting the material of the tip surface of said probe such that the surface energy of said probe tip becomes less than the interface energy between the tip surface and the surface being measured, thereby the surface configuration of soft body, or soft fouling adhered to the body surface can be measured.A method of measuring the surface configuration and a method of producing magnetic recording medium using the same are also provided.

6. 发明授权

US4839345A Hydrated adhesive gel and method for preparing the same 失效
标题翻译：水合胶凝胶及其制备方法
公开(公告)号：US4839345A
公开(公告)日：1989-06-13
申请号：US836080
申请日：1986-03-04
申请人： Hiroshi Doi , Masanori Inoue
发明人： Hiroshi Doi , Masanori Inoue
IPC分类号： A61L15/18 , A61K8/64 , A61K8/65 , A61K47/42 , A61L15/20 , A61L15/58 , A61L26/00 , A61Q19/00 , C08H1/00
CPC分类号： A61K8/042 , A61K47/42 , A61K8/64 , A61K8/645 , A61K8/65 , A61L15/20 , A61L15/58 , A61L26/0028 , A61L26/008 , A61Q19/00 , C08H1/00
摘要： This invention relates to a hydrated adhesive gel using a product which is obtained by reacting an aqueous solution consisting essentially of protein having amino groups at the side chains thereof, a gelling retarder, and a hydrophilic tackifier with a N-hydroxyimidoester compound.
摘要翻译：本发明涉及一种使用产品的水合粘合凝胶，该产品通过使基本上由其侧链具有氨基的蛋白质，胶凝延迟剂和亲水增粘剂组成的水溶液与N-羟基亚氨基酯化合物反应而获得。

7. 发明申请

US20110184401A1 CRYOTHERAPY PLANNING DEVICE AND CRYOTHERAPY DEVICE 审中-公开
公开(公告)号：US20110184401A1
公开(公告)日：2011-07-28
申请号：US13054439
申请日：2009-07-10
申请人： Kansei Iwata , Yasushi Iwata , Taisuke Nagasawa , Masafumi Kawamura , Yotaro Izumi , Masanori Inoue , Norimasa Tsukada , Hideki Yashiro
发明人： Kansei Iwata , Yasushi Iwata , Taisuke Nagasawa , Masafumi Kawamura , Yotaro Izumi , Masanori Inoue , Norimasa Tsukada , Hideki Yashiro
IPC分类号： A61B18/02
CPC分类号： A61B18/02 , A61B34/10 , A61B2018/00041 , A61B2018/0275 , A61B2018/0281
摘要： The present invention relates to a treatment device utilized in the freezing treatment method and its treatment planning device, and has an object to settle a freezing period·defrosting period according to a size of a treatment portion.A cryotherapy device comprises a gas supply-exhaust system 100, a control system 200 therefore and a freezing probe system 300. The gas supply-exhaust system 100 supplies a freezing gas and a defrosting gas to a probe 60 of the freezing probe system 300 to freeze and defrost the treatment portion surrounding the tip of the probe 60 by the Joule·Thomson effect. The control system 200 controls the gas supply-exhaust system 100 and makes treatment planning data for this control. The treatment planning data includes a freezing·defrosting sequence to determine the freezing period and the defrosting period. The determination of this sequence is performed by the computer in the control system 200. Further, this sequence is determined corresponding to the focus treatment size according to the freezing·defrosting characteristics of the tissue.
摘要翻译：本发明涉及一种在冷冻处理方法及其处理计划装置中使用的处理装置，其目的是根据处理部的尺寸来设定冷冻期·除霜期间。冷冻治疗装置包括气体供给 - 排气系统100，因此控制系统200和冷冻探针系统300.气体供应 - 排气系统100将冷冻气体和除霜气体供应到冷冻探针系统300的探针60，以通过焦耳·汤姆森效应冻结和除霜探针60的尖端周围的处理部分。控制系统200控制供气排气系统100，并且进行该控制的处理计划数据。治疗计划数据包括冷冻·除霜顺序，以确定冷冻期和除霜期。该序列的确定由控制系统200中的计算机执行。此外，根据组织的冻结·除霜特性，对应于焦点处理尺寸确定该顺序。

8. 发明授权

US07911020B2 Semiconductor device having breakdown voltage maintaining structure and its manufacturing method 有权
标题翻译：具有击穿电压保持结构的半导体器件及其制造方法
公开(公告)号：US07911020B2
公开(公告)日：2011-03-22
申请号：US12171193
申请日：2008-07-10
申请人： Yasushi Niimura , Takashi Kobayashi , Masanori Inoue , Yasuhiko Onishi
发明人： Yasushi Niimura , Takashi Kobayashi , Masanori Inoue , Yasuhiko Onishi
IPC分类号： H01L29/02
CPC分类号： H01L29/7811 , H01L29/0615 , H01L29/0619 , H01L29/0638 , H01L29/1095 , H01L29/404 , H01L29/41741 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device has an active portion having at least one well region in a semiconductor layer, and a breakdown voltage maintaining structure surrounding the active portion. The maintaining structure includes a conductor layer over each of a plurality of guard rings with an insulating film interposed in between and connected to the respective guard ring. An inner side end portion of each conductor layer projects over the immediate adjacent inner side guard ring. The impurity concentration of the guard rings is set between the impurity concentrations of the semiconductor layer and the well regions. A field plate can extend over the innermost conductor layer with the insulating film interposed in between. The field plate is in contact with the outermost well region and is in contact with the first conductor layer. The outer side end of the field plate extends outwardly beyond an outer side end of the innermost conductor layer. With these arrangements, the guard rings can be shortened and the chip size can be reduced. Furthermore, the device can be made less susceptible to external charge.
摘要翻译：半导体器件具有在半导体层中具有至少一个阱区的有源部分和围绕有源部分的击穿电压保持结构。保持结构包括在多个保护环中的每一个上的导体层，绝缘膜介于其间并连接到相应的保护环。每个导体层的内侧端部突出在紧邻的内侧保护环上。保护环的杂质浓度设定在半导体层和阱区的杂质浓度之间。场板可以在绝缘膜介于其间的最内侧的导体层上延伸。场板与最外层区域接触并与第一导体层接触。场板的外侧端部向外延伸超出最内侧导体层的外侧端部。通过这些布置，可以缩短保护环，并且可以减小芯片尺寸。此外，可以使该装置不易受到外部充电的影响。

9. 发明授权

US07372111B2 Semiconductor device with improved breakdown voltage and high current capacity 有权
标题翻译：具有改善的击穿电压和高电流容量的半导体器件
公开(公告)号：US07372111B2
公开(公告)日：2008-05-13
申请号：US11197751
申请日：2005-08-04
申请人： Yasuhiko Onishi , Takeyoshi Nishimura , Yasushi Niimura , Masanori Inoue
发明人： Yasuhiko Onishi , Takeyoshi Nishimura , Yasushi Niimura , Masanori Inoue
IPC分类号： H01L29/72
CPC分类号： H01L29/7811 , H01L29/0634 , H01L29/0696 , H01L29/0847 , H01L29/7802
摘要： The superjunction semiconductor device includes a drain drift section, which includes a first alternating conductivity type layer formed of first n-type regions and first p-type regions arranged alternately. The device also includes a peripheral section around the drain drift section, which includes a second alternating conductivity type layer formed of second n-type regions and second p-type regions arranged alternately. The peripheral section further includes a third alternating conductivity type layer in its surface portion. The third alternating conductivity type layer is formed of third n-type regions and third p-type regions arranged alternately. At least the peripheral section is configured to improve the avalanche withstanding capability over the entire device.
摘要翻译：超级结半导体器件包括漏极漂移部分，其包括由第一n型区域和交替布置的第一p型区域形成的第一交变导电类型层。该装置还包括围绕漏极漂移部分的周边部分，其包括由交替布置的第二n型区域和第二p型区域形成的第二交变导电类型层。外围部分还包括在其表面部分中的第三交变导电类型层。第三交变导电型层由交替布置的第三n型区域和第三p型区域形成。至少外围部分被配置为提高整个设备上的雪崩承受能力。

10. 发明授权

US06943410B2 High power vertical semiconductor device 有权
标题翻译：大功率立式半导体器件
公开(公告)号：US06943410B2
公开(公告)日：2005-09-13
申请号：US10170216
申请日：2002-06-12
申请人： Tatsuhiko Fujihira , Takashi Kobayashi , Hitoshi Abe , Yasushi Niimura , Masanori Inoue
发明人： Tatsuhiko Fujihira , Takashi Kobayashi , Hitoshi Abe , Yasushi Niimura , Masanori Inoue
IPC分类号： H01L29/06 , H01L29/08 , H01L29/423 , H01L29/78 , H01L29/76 , H01L29/94 , H01L31/062 , H01L23/58
CPC分类号： H01L29/7802 , H01L29/0619 , H01L29/0634 , H01L29/0696 , H01L29/0847 , H01L29/402 , H01L29/4238 , H01L2924/0002 , H01L2924/00
摘要： A vertical MOS semiconductor device exhibits a high breakdown voltage and low on-resistance, reduces the tradeoff relation between the on-resistance and the breakdown voltage, and realizes high speed switching. The semiconductor device has a breakdown-voltage sustaining layer, such as an n−-type drift layer, and a well region, such as a p-type well region, in the breakdown-voltage sustaining layer. The resistivity ρ (Ωcm) of the breakdown-voltage layer is within a range expressed in terms of the breakdown voltage Vbr (V). The semiconductor device also has stripe shaped surface drain regions that extend from the well region and are surrounded by the well region. The surface area ratio between surface drain regions and the well region, which includes the source region, is from 0.01 to 0.2.
摘要翻译：垂直MOS半导体器件表现出高的击穿电压和低导通电阻，降低了导通电阻和击穿电压之间的折衷关系，实现了高速切换。该半导体器件具有击穿电压维持层，例如n + P型漂移层，以及击穿电压维持层中的诸如p型阱区的阱区。击穿电压层的电阻率rho（Ωgacm）在以击穿电压Vbr（V）表示的范围内。半导体器件还具有从阱区域延伸并被阱区域包围的条形表面漏极区域。表面漏区与包含源区的阱区的表面积比为0.01〜0.2。

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