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1. 发明授权

US5757120A Color cathode ray tube with decenterable magnetic body 失效
标题翻译：彩色阴极射线管，带有可靠的磁性体
公开(公告)号：US5757120A
公开(公告)日：1998-05-26
申请号：US733402
申请日：1996-10-18
申请人： Masanobu Honda , Isao Yonetani
发明人： Masanobu Honda , Isao Yonetani
IPC分类号： H01J29/76 , H01J29/74
CPC分类号： H01J29/76 , H01J2229/7031
摘要： A color cathode ray tube device is provided in which the generation of the trapezoidal distortion of a rectangular raster is controlled and an off-axis misconvergence is corrected to obtain high image quality in the peripheral portion of a screen. An annular ferrite core is provided adjacently to the electron gun side end face of a ferrite core of a deflection yoke so as to b decentered radially within the predetermined range around the central axis of the deflection yoke in the tube axial direction. An asymmetric magnetic field is formed on the electron gun side of the deflection yoke by the annular ferrite core which has been decentered. Thus, the off-axis misconvergence can be corrected while controlling the generation of the trapezoidal distortion.
摘要翻译：提供了一种彩色阴极射线管装置，其中控制矩形光栅的梯形失真的产生，并且校正离轴失会聚以在屏幕的周边部分中获得高图像质量。与偏转线圈的铁氧体磁心的电子枪侧端面相邻设置有环状的铁氧体磁芯，从而沿着管轴方向偏心偏转在偏转线圈的中心轴线附近的规定范围内。通过已经偏心的环形铁氧体磁心，在偏转线圈的电子枪侧形成非对称磁场。因此，可以在控制梯形失真的产生的同时校正离轴失会聚。

2. 发明授权

US09460893B2 Substrate processing apparatus 有权
标题翻译：基板加工装置
公开(公告)号：US09460893B2
公开(公告)日：2016-10-04
申请号：US13542818
申请日：2012-07-06
申请人： Masaya Kawamata , Masanobu Honda , Kazuhiro Kubota
发明人： Masaya Kawamata , Masanobu Honda , Kazuhiro Kubota
IPC分类号： C23C16/455 , H01J37/32
CPC分类号： H01J37/32091 , C23C16/4558 , H01J37/3244
摘要： A substrate processing apparatus can suppress an edge gas from being diffused toward a center region of a substrate. An upper electrode 200 serving as a gas introducing unit configured to supply one kind of gas or different kinds of gases to a center region and an edge region of the substrate includes a center gas inlet section 204 having a multiple number of gas holes 212 for a center gas; and an edge gas inlet section 206 having a multiplicity of gas holes 214 for an edge gas. By providing a gas hole formation plate 230 having gas holes 232 communicating with the gas holes 214 at a bottom surface of the edge gas inlet section 206, a vertical position of edge gas discharging openings can be adjusted.
摘要翻译：基板处理装置可以抑制边缘气体朝向基板的中心区域扩散。作为构成为将一种气体或不同种类的气体供给到基板的中心区域和边缘区域的气体导入单元的上部电极200包括具有多个气孔212的中心气体导入部204，中心气以及边缘气体入口部分206，其具有用于边缘气体的多个气体孔214。通过在边缘气体入口部206的底面设置具有与气孔214连通的气孔232的气孔形成板230，能够调整边缘气体排出口的垂直位置。

3. 发明授权

US09349619B2 Plasma etching method and plasma etching apparatus 有权
标题翻译：等离子体蚀刻方法和等离子体蚀刻装置
公开(公告)号：US09349619B2
公开(公告)日：2016-05-24
申请号：US14238552
申请日：2012-08-28
申请人： Masaya Kawamata , Masanobu Honda , Kazuhiro Kubota
发明人： Masaya Kawamata , Masanobu Honda , Kazuhiro Kubota
IPC分类号： H01L21/67 , H01L21/3065 , H01J37/32 , H01L21/311 , H01L21/683
CPC分类号： H01L21/67069 , H01J37/32091 , H01J37/32449 , H01L21/3065 , H01L21/31116 , H01L21/67109 , H01L21/67248 , H01L21/6831
摘要： A plasma etching apparatus includes a processing chamber; a holding unit for holding the substrate within the processing chamber; an electrode plate facing the holding unit; a plurality of supply parts arranged at different radial positions with respect to the substrate for supplying processing gas to a space between the holding unit and the electrode plate; a high frequency power supply that supplies high frequency power to the holding unit and/or the electrode plate to convert the processing gas supplied to the space into plasma; an adjustment unit that adjusts a supply condition for each of the supply parts; and a control unit that controls the adjustment unit to vary the supply condition between a position where an effect of diffusion of processing gas on an active species concentration distribution at the substrate is dominant and a position where an effect of flow of the processing gas is dominant.
摘要翻译：等离子体蚀刻装置包括处理室; 保持单元，用于将基板保持在处理室内; 面对所述保持单元的电极板; 多个供给部件，其布置在相对于所述基板的不同径向位置处，用于将处理气体供应到所述保持单元和所述电极板之间的空间; 高频电源，其向所述保持单元和/或所述电极板提供高频电力，以将供应到所述空间的处理气体转换为等离子体; 调整单元，调整各供给部的供给条件; 以及控制单元，其控制所述调整单元改变处理气体的扩散对所述基板的活性种类浓度分布的影响为主的位置与所述处理气体的流动的影响为主的位置之间的供给条件。

4. 发明授权

US08999068B2 Chamber cleaning method 有权
标题翻译：室内清洗方式
公开(公告)号：US08999068B2
公开(公告)日：2015-04-07
申请号：US12873458
申请日：2010-09-01
申请人： Masanobu Honda , Hidetoshi Hanaoka , Taichi Hirano , Takanori Mimura , Manabu Iwata , Taketoshi Okajo
发明人： Masanobu Honda , Hidetoshi Hanaoka , Taichi Hirano , Takanori Mimura , Manabu Iwata , Taketoshi Okajo
IPC分类号： C23C16/44 , H01J37/32
CPC分类号： C23C16/4405 , H01J37/32862
摘要： Provided is a chamber cleaning method capable of efficiently removing a CF-based shoulder deposit containing Si and Al deposited on an outer periphery of an ESC. A mixed gas of an O2 gas and a F containing gas is supplied toward an outer periphery 24a of an ESC 24 at a pressure ranging from about 400 mTorr to about 800 mTorr; plasma generated from the mixed gas is irradiated onto the outer periphery 24a of the ESC 24; an O2 single gas as a mask gas is supplied to the top surface of ESC 24 except the outer periphery 24a; and the shoulder deposit 50 adhered to the outer periphery 24a is decomposed and removed while preventing the top surface of ESC 24 except the outer periphery 24a from being exposed to a F radical.
摘要翻译：提供一种能够有效地除去沉积在ESC外周上的含有Si和Al的CF系肩层沉积物的室清洗方法。在约400mTorr至约800mTorr的压力下，向ESC24的外周边24a供应O 2气体和F气体的混合气体; 从混合气体产生的等离子体照射到ESC24的外周24a上; 作为掩模气体的O 2单体气体除外周边24a供给到ESC24的上表面; 并且附着在外周24a上的肩部沉积物50被分解除去，同时防止除了外周边24a之外的ESC 24的顶面暴露于F基。

5. 发明授权

US08524331B2 Substrate processing method 有权
标题翻译：基板加工方法
公开(公告)号：US08524331B2
公开(公告)日：2013-09-03
申请号：US12943967
申请日：2010-11-11
申请人： Masanobu Honda
发明人： Masanobu Honda
IPC分类号： H05H1/24
CPC分类号： H01J37/32165 , C23C16/045 , C23C16/455 , C23C16/52 , H01J37/32091 , H01J37/3266
摘要： A substrate processing method effectively suppresses non-uniformity in deposition degree on a surface of a substrate. The substrate processing method includes depositing a deposit on a sidewall of each opening of a resist pattern, which is formed on an antireflection film on an etching target film of the substrate and is provided with a plurality of openings, before etching the etching target film of the substrate. Plasma is generated in the depositing process by introducing a CHF-based gas into the processing chamber at a flow rate equal to or higher than about 1000 sccm while a pressure in the processing chamber is set to equal to or higher than about 100 mTorr.
摘要翻译：基板处理方法有效地抑制基板表面的沉积程度的不均匀性。基板处理方法包括在抗蚀剂图案的每个开口的侧壁上沉积沉积物，其形成在基板的蚀刻目标膜上的抗反射膜上，并且在蚀刻蚀刻目标膜之前设置有多个开口底物。在沉积过程中通过以等于或高于约1000sccm的流速将CHF基气体引入处理室而在处理室中的压力设定为等于或高于约100mTorr时，在沉积过程中产生等离子体。

6. 发明授权

US08404595B2 Plasma processing method 有权
标题翻译：等离子体处理方法
公开(公告)号：US08404595B2
公开(公告)日：2013-03-26
申请号：US11860788
申请日：2007-09-25
申请人： Masanobu Honda , Manabu Sato , Yoshiki Igarashi
发明人： Masanobu Honda , Manabu Sato , Yoshiki Igarashi
IPC分类号： H01L23/302 , H01L21/461 , B23P15/00 , C03C25/00 , C03C15/00 , C03C25/68 , C23F1/00 , C23F3/00 , B44C1/22
CPC分类号： H01L21/467 , H01J37/32091 , H01J37/32165 , H01L21/31116
摘要： A plasma processing method for processing a target substrate uses a plasma processing apparatus which includes a vacuum evacuable processing vessel for accommodating the target substrate therein, a first electrode disposed in the processing vessel and connected to a first RF power supply for plasma generation and a second electrode disposed to face the first electrode. The method includes exciting a processing gas containing fluorocarbon in the processing vessel to generate a plasma while applying a negative DC voltage having an absolute value ranging from about 100 V to 1500 V or an RF power of a frequency lower than about 4 MHz to the second electrode. The target layer is etched by the plasma, thus forming recesses on the etching target layer based on the pattern of the resist layer.
摘要翻译：用于处理目标基板的等离子体处理方法使用等离子体处理装置，该等离子体处理装置包括用于容纳目标基板的真空可排除处理容器，设置在处理容器中的第一电极，并连接到用于等离子体产生的第一RF电源，设置成面对第一电极的电极。该方法包括在处理容器中激发含有碳氟化合物的处理气体，以产生等离子体，同时施加绝对值范围从约100V至1500V或低于约4MHz的RF功率的负DC电压至第二电极。通过等离子体蚀刻目标层，由此基于抗蚀剂层的图案在蚀刻目标层上形成凹部。

7. 发明申请

US20110114113A1 SUBSTRATE PROCESSING APPARATUS, CLEANING METHOD THEREOF AND STORAGE MEDIUM STORING PROGRAM 审中-公开
标题翻译：基板加工设备，其清洁方法和存储介质存储程序
公开(公告)号：US20110114113A1
公开(公告)日：2011-05-19
申请号：US12948307
申请日：2010-11-17
申请人： Masanobu Honda , Takahiro Murakami , Takanori Mimura , Hidetoshi Hanaoka
发明人： Masanobu Honda , Takahiro Murakami , Takanori Mimura , Hidetoshi Hanaoka
IPC分类号： B08B7/00 , H01L21/3065
CPC分类号： B08B7/0035 , H01J37/32091 , H01J37/32165 , H01J37/32449 , H01J37/32862
摘要： There is provided a cleaning method for a substrate processing apparatus capable of improving a removing rate of a deposit without increasing a self-bias voltage. The cleaning method includes supplying, to clean the inside of a processing chamber 102 under preset processing conditions, a processing gas including an O2 gas and an inert gas into the processing chamber at a preset flow rate ratio of the processing gas; and generating plasma of the processing gas by applying a high frequency power between a lower electrode 111 and a upper electrode 120. Here, the preset flow rate ratio of the processing gas is set depending on a self-bias voltage of the lower electrode 111 such that a flow rate ratio of the O2 gas is reduced while a flow rate ratio of the Ar gas is increased as an absolute value of the self-bias voltage decreases.
摘要翻译：提供了一种能够提高沉积物去除速率而不增加自偏压的基板处理装置的清洗方法。该清洗方法包括：以预定的处理条件，以预定的处理气体的流量比将供给包含O 2气体和惰性气体的处理气体供给到处理室102的内部，并且通过在下电极111和上电极120之间施加高频电力来产生处理气体的等离子体。这里，处理气体的预设流量比根据下电极111的自偏压设定，随着自偏压的绝对值的降低，Ar气体的流量比增加，O 2气体的流量比降低。

8. 发明申请

US20090242516A1 PLASMA ETCHING METHOD AND COMPUTER READABLE STORAGE MEDIUM 有权
标题翻译：等离子体蚀刻方法和计算机可读存储介质
公开(公告)号：US20090242516A1
公开(公告)日：2009-10-01
申请号：US12413999
申请日：2009-03-30
申请人： Masanobu Honda , Hiroyuki Nakayama , Manabu Sato
发明人： Masanobu Honda , Hiroyuki Nakayama , Manabu Sato
IPC分类号： C23F1/02 , H01L21/3065
CPC分类号： H01L21/31116 , H01J37/32027 , H01J37/32091 , H01L21/67069
摘要： A plasma etching method includes disposing a first electrode and a second electrode to face each other; preparing a part in the processing chamber; supporting a substrate; vacuum-evacuating the processing chamber; supplying an etching gas into a processing space between the first electrode and the second electrode; generating a plasma of the etching gas in the processing space by applying a radio wave power to the first electrode or the second electrode; and etching a film to be processed on a surface of the substrate by using the plasma. Further, a DC voltage is applied to the part during the etching process, the part being disposed away from the substrate and being etched by reaction with reactant species in the plasma.
摘要翻译：等离子体蚀刻方法包括：将第一电极和第二电极相对配置; 在处理室中准备一部分; 支撑底物; 真空抽真空处理室; 向第一电极和第二电极之间的处理空间提供蚀刻气体; 通过向所述第一电极或所述第二电极施加无线电波来在所述处理空间中产生蚀刻气体的等离子体; 并且通过使用等离子体在基板的表面上蚀刻待处理的膜。此外，在蚀刻工艺期间，将DC电压施加到该部件，该部分被设置为远离衬底并且通过与等离子体中的反应物物质的反应进行蚀刻。

9. 发明申请

US20090242133A1 ELECTRODE STRUCTURE AND SUBSTRATE PROCESSING APPARATUS 审中-公开
标题翻译：电极结构和基板加工设备
公开(公告)号：US20090242133A1
公开(公告)日：2009-10-01
申请号：US12407109
申请日：2009-03-19
申请人： Hiroyuki Nakayama , Masanobu Honda , Kenji Masuzawa , Manabu Iwata
发明人： Hiroyuki Nakayama , Masanobu Honda , Kenji Masuzawa , Manabu Iwata
IPC分类号： C23F1/08
CPC分类号： H01J37/32165 , H01J37/32091 , H01J37/32541
摘要： An electrode structure capable of adequately increasing an electron density in a processing space at a part facing a circumferential edge portion of a substrate. In a processing chamber of a substrate processing apparatus that performs RIE processing on a wafer, an upper electrode of the electrode structure is disposed to face the wafer placed on a susceptor inside the processing chamber. The upper electrode includes an inner electrode facing a central portion of the wafer and an outer electrode facing the circumferential edge portion of the wafer. The inner and outer electrodes are connected with first and second DC power sources, respectively. The outer electrode has its first secondary electron emission surface extending parallel to the wafer and its second secondary electron emission surface obliquely extending relative to the first secondary electron emission surface.
摘要翻译：一种电极结构，其能够在面向基板的周缘部的部分处适当地增加处理空间中的电子密度。在对晶片进行RIE处理的基板处理装置的处理室中，设置电极结构体的上部电极，使其位于处理室内的基座上。上电极包括面对晶片的中心部分的内电极和面对晶片周缘部分的外电极。内电极和外电极分别与第一和第二直流电源连接。外部电极具有平行于晶片延伸的第一二次电子发射表面及其相对于第一二次电子发射表面倾斜延伸的第二二次电子发射表面。

10. 发明申请

US20090221151A1 Electrode for plasma processing apparatus, plasma processing apparatus, plasma processing method and storage medium 审中-公开
标题翻译：等离子体处理装置用电极，等离子体处理装置，等离子体处理方法和存储介质
公开(公告)号：US20090221151A1
公开(公告)日：2009-09-03
申请号：US12379052
申请日：2009-02-11
申请人： Masanobu Honda , Shinji Himori
发明人： Masanobu Honda , Shinji Himori
IPC分类号： H01L21/465 , C23F1/08
CPC分类号： H01J37/32009 , H01J37/32091 , H01J37/3244 , H01J37/32449 , H01J37/32541
摘要： The present invention provides an upper electrode used in an etching apparatus and the etching apparatus including the upper electrode, both of which can properly reduce intensity of electric field of plasma around a central portion of a substrate to be processed, thus enhancing in-plane uniformity of a plasma process. In this apparatus, a recess, serving as a space for allowing a dielectric to be injected therein, is provided around a central portion of the upper electrode. A dielectric supply passage configured for supplying the dielectric into the space and a dielectric discharge passage configured for discharging the dielectric from the space are connected with the space, respectively. With such configuration, the dielectric can be controllably supplied into the recess, such that in-plane distribution of the intensity of the electric field can be uniformed, corresponding to in-plane distribution of the intensity of the electric field of the plasma generated under various process conditions, such as a kind of each wafer that will be etched, each processing gas that will be used, and the like.
摘要翻译：本发明提供了一种用于蚀刻装置的上电极和包括上电极的蚀刻装置，两者都可以适当地降低待加工基板的中心部分附近的等离子体的电场强度，从而提高面内均匀性的等离子体工艺。在该装置中，在上部电极的中心部分的周围设置用作容纳电介质的空间的凹部。电介质供给通路被配置为将电介质供应到空间中，并且介质排出通道被配置为用于从空间排出电介质。通过这样的结构，电介质可以可控地供给到凹部中，使得电场强度的面内分布可以均匀化，对应于各种不同的等离子体产生的等离子体的电场强度的面内分布工艺条件，例如将被蚀刻的每种晶片的种类，将被使用的每种处理气体等。

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