专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08303834B2 Plasma processing apparatus and plasma etching method 有权
标题翻译：等离子体处理装置和等离子体蚀刻方法
公开(公告)号：US08303834B2
公开(公告)日：2012-11-06
申请号：US12411953
申请日：2009-03-26
申请人： Masanobu Honda , Kenji Masuzawa , Hiroyuki Nakayama , Manabu Iwata , Manabu Sato , Kazuki Narishige
发明人： Masanobu Honda , Kenji Masuzawa , Hiroyuki Nakayama , Manabu Iwata , Manabu Sato , Kazuki Narishige
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00
CPC分类号： H01J37/32027 , H01J37/32091
摘要： A plasma processing apparatus includes an inner upper electrode provided to face a lower electrode mounting thereon a substrate, an outer upper electrode provided in a ring shape at a radially outside of the inner upper electrode and electrically isolated from the inner upper electrode in a vacuum evacuable processing chamber and a processing gas supply unit for supplying a processing gas into a processing space between the inner and the outer upper electrode and the lower electrode. A radio frequency (RF) power supply unit is also provide to apply a RF power to the lower electrode or the inner and the outer upper electrode to generate a plasma of the processing gas by RF discharge. A first and a second DC power supply unit are provided to apply a first and a second variable DC voltage to the inner upper electrode, respectively.
摘要翻译：一种等离子体处理装置，包括：内部上部电极，其设置在其上安装有基板的下部电极;外部上部电极，其在所述内部上部电极的径向外侧设置成环状，并且在真空抽真空中与所述内部上部电极电隔离处理室和处理气体供应单元，用于将处理气体供应到内外电极和下电极之间的处理空间中。射频（RF）电源单元还提供向下电极或内外电极施加RF功率以通过RF放电产生处理气体的等离子体。提供第一和第二直流电源单元，以分别向内部上部电极施加第一和第二可变直流电压。

2. 发明申请

US20090242515A1 PLASMA PROCESSING APPARATUS AND PLASMA ETCHING METHOD 有权
标题翻译：等离子体处理装置和等离子体蚀刻方法
公开(公告)号：US20090242515A1
公开(公告)日：2009-10-01
申请号：US12411953
申请日：2009-03-26
申请人： Masanobu Honda , Kenji Masuzawa , Hiroyuki Nakayama , Manabu Iwata , Manabu Sato , Kazuki Narishige
发明人： Masanobu Honda , Kenji Masuzawa , Hiroyuki Nakayama , Manabu Iwata , Manabu Sato , Kazuki Narishige
IPC分类号： B44C1/22 , C23F1/02
CPC分类号： H01J37/32027 , H01J37/32091
摘要： A plasma processing apparatus includes an inner upper electrode provided to face a lower electrode mounting thereon a substrate, an outer upper electrode provided in a ring shape at a radially outside of the inner upper electrode and electrically isolated from the inner upper electrode in a vacuum evacuable processing chamber and a processing gas supply unit for supplying a processing gas into a processing space between the inner and the outer upper electrode and the lower electrode. A radio frequency (RF) power supply unit is also provide to apply a RF power to the lower electrode or the inner and the outer upper electrode to generate a plasma of the processing gas by RF discharge. A first and a second DC power supply unit are provided to apply a first and a second variable DC voltage to the inner upper electrode, respectively.
摘要翻译：一种等离子体处理装置，包括：内部上部电极，其设置在其上安装有基板的下部电极;外部上部电极，其在所述内部上部电极的径向外侧设置成环状，并且在真空抽真空中与所述内部上部电极电隔离处理室和处理气体供应单元，用于将处理气体供应到内外部上电极和下电极之间的处理空间中。射频（RF）电源单元还提供向下电极或内外电极施加RF功率以通过RF放电产生处理气体的等离子体。提供第一和第二直流电源单元，以分别向内部上部电极施加第一和第二可变直流电压。

3. 发明授权

US08241514B2 Plasma etching method and computer readable storage medium 有权
标题翻译：等离子体蚀刻方法和计算机可读存储介质
公开(公告)号：US08241514B2
公开(公告)日：2012-08-14
申请号：US12413999
申请日：2009-03-30
申请人： Masanobu Honda , Hiroyuki Nakayama , Manabu Sato
发明人： Masanobu Honda , Hiroyuki Nakayama , Manabu Sato
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00
CPC分类号： H01L21/31116 , H01J37/32027 , H01J37/32091 , H01L21/67069
摘要： A plasma etching method includes disposing a first electrode and a second electrode to face each other; preparing a part in the processing chamber; supporting a substrate; vacuum-evacuating the processing chamber; supplying an etching gas into a processing space between the first electrode and the second electrode; generating a plasma of the etching gas in the processing space by applying a radio wave power to the first electrode or the second electrode; and etching a film to be processed on a surface of the substrate by using the plasma. Further, a DC voltage is applied to the part during the etching process, the part being disposed away from the substrate and being etched by reaction with reactant species in the plasma.
摘要翻译：等离子体蚀刻方法包括：将第一电极和第二电极相对配置; 在处理室中准备一部分; 支撑底物; 真空抽真空处理室; 向第一电极和第二电极之间的处理空间提供蚀刻气体; 通过向所述第一电极或所述第二电极施加无线电波来在所述处理空间中产生蚀刻气体的等离子体; 并且通过使用等离子体在基板的表面上蚀刻待处理的膜。此外，在蚀刻工艺期间，将DC电压施加到该部件，该部分被设置为远离衬底并且通过与等离子体中的反应物物质的反应进行蚀刻。

4. 发明申请

US20090242516A1 PLASMA ETCHING METHOD AND COMPUTER READABLE STORAGE MEDIUM 有权
标题翻译：等离子体蚀刻方法和计算机可读存储介质
公开(公告)号：US20090242516A1
公开(公告)日：2009-10-01
申请号：US12413999
申请日：2009-03-30
申请人： Masanobu Honda , Hiroyuki Nakayama , Manabu Sato
发明人： Masanobu Honda , Hiroyuki Nakayama , Manabu Sato
IPC分类号： C23F1/02 , H01L21/3065
CPC分类号： H01L21/31116 , H01J37/32027 , H01J37/32091 , H01L21/67069
摘要： A plasma etching method includes disposing a first electrode and a second electrode to face each other; preparing a part in the processing chamber; supporting a substrate; vacuum-evacuating the processing chamber; supplying an etching gas into a processing space between the first electrode and the second electrode; generating a plasma of the etching gas in the processing space by applying a radio wave power to the first electrode or the second electrode; and etching a film to be processed on a surface of the substrate by using the plasma. Further, a DC voltage is applied to the part during the etching process, the part being disposed away from the substrate and being etched by reaction with reactant species in the plasma.
摘要翻译：等离子体蚀刻方法包括：将第一电极和第二电极相对配置; 在处理室中准备一部分; 支撑底物; 真空抽真空处理室; 向第一电极和第二电极之间的处理空间提供蚀刻气体; 通过向所述第一电极或所述第二电极施加无线电波来在所述处理空间中产生蚀刻气体的等离子体; 并且通过使用等离子体在基板的表面上蚀刻待处理的膜。此外，在蚀刻工艺期间，将DC电压施加到该部件，该部分被设置为远离衬底并且通过与等离子体中的反应物物质的反应进行蚀刻。

5. 发明申请

US20090242133A1 ELECTRODE STRUCTURE AND SUBSTRATE PROCESSING APPARATUS 审中-公开
标题翻译：电极结构和基板加工设备
公开(公告)号：US20090242133A1
公开(公告)日：2009-10-01
申请号：US12407109
申请日：2009-03-19
申请人： Hiroyuki Nakayama , Masanobu Honda , Kenji Masuzawa , Manabu Iwata
发明人： Hiroyuki Nakayama , Masanobu Honda , Kenji Masuzawa , Manabu Iwata
IPC分类号： C23F1/08
CPC分类号： H01J37/32165 , H01J37/32091 , H01J37/32541
摘要： An electrode structure capable of adequately increasing an electron density in a processing space at a part facing a circumferential edge portion of a substrate. In a processing chamber of a substrate processing apparatus that performs RIE processing on a wafer, an upper electrode of the electrode structure is disposed to face the wafer placed on a susceptor inside the processing chamber. The upper electrode includes an inner electrode facing a central portion of the wafer and an outer electrode facing the circumferential edge portion of the wafer. The inner and outer electrodes are connected with first and second DC power sources, respectively. The outer electrode has its first secondary electron emission surface extending parallel to the wafer and its second secondary electron emission surface obliquely extending relative to the first secondary electron emission surface.
摘要翻译：一种电极结构，其能够在面向基板的周缘部的部分处适当地增加处理空间中的电子密度。在对晶片进行RIE处理的基板处理装置的处理室中，设置电极结构体的上部电极，使其位于处理室内的基座上。上电极包括面对晶片的中心部分的内电极和面对晶片周缘部分的外电极。内电极和外电极分别与第一和第二直流电源连接。外部电极具有平行于晶片延伸的第一二次电子发射表面及其相对于第一二次电子发射表面倾斜延伸的第二二次电子发射表面。

6. 发明授权

US08440050B2 Plasma processing apparatus and method, and storage medium 有权
标题翻译：等离子体处理装置和方法以及存储介质
公开(公告)号：US08440050B2
公开(公告)日：2013-05-14
申请号：US12372156
申请日：2009-02-17
申请人： Manabu Iwata , Hiroyuki Nakayama , Kenji Masuzawa , Masanobu Honda
发明人： Manabu Iwata , Hiroyuki Nakayama , Kenji Masuzawa , Masanobu Honda
IPC分类号： C23F1/00 , H01L21/306 , G06F19/00
CPC分类号： H01J37/32027 , H01J37/32091 , H01J37/32165
摘要： A plasma processing apparatus includes a vacuum evacuable processing chamber, a first electrode divided into an outer electrode and an inner electrode, a second electrode, a first and a second high frequency power application unit for applying to the second electrode a first and a second high frequency power having a relatively high frequency and a relatively low frequency, respectively, a first and a second DC voltage application circuit apply a DC voltage to the outer and the inner electrode, respectively, and a processing gas supply unit. A space between the first electrode and the second electrode serves as a plasma generation space, and frequency-impedance characteristics of the outer electrode are set such that the impedance increases at the frequency of the second high frequency power and decreases at the frequency of the first high frequency power as the DC voltage applied to the outer electrode increases.
摘要翻译：等离子体处理装置包括真空排气处理室，分为外部电极和内部电极的第一电极，第二电极，第一和第二高频电力施加单元，用于向第二电极施加第一和第二高电平第一和第二直流电压施加电路分别对外电极和内电极分别施加直流电压和处理气体供给单元。第一电极和第二电极之间的空间用作等离子体产生空间，外部电极的频率阻抗特性被设定为使得阻抗在第二高频功率的频率下增加，并且在第一随着施加到外部电极的DC电压的增加，高频功率增加。

7. 发明授权

US08768644B2 Particle distribution analysis method for computer readable storage medium for storing program for executing the method 有权
标题翻译：用于存储用于执行该方法的程序的计算机可读存储介质的粒子分布分析方法
公开(公告)号：US08768644B2
公开(公告)日：2014-07-01
申请号：US13175219
申请日：2011-07-01
申请人： Kunio Miyauchi , Hiroyuki Nakayama
发明人： Kunio Miyauchi , Hiroyuki Nakayama
IPC分类号： G01N31/00
CPC分类号： G01N15/0625 , G01N15/0227 , G06K9/6212 , G06K9/6218 , H01L22/20
摘要： There is provided a support method for a particle distribution analysis for a substrate. In the support method, histogram data of inter-particle distances are created for all particles on a target substrate subjected to the particle distribution analysis from particle coordinate data of the target substrate. Further, histogram data of inter-particle distances are created for multiple virtual substrates each having the same number of randomly distributed particles as the particles on the target substrate. Based on a difference between the histogram data of the target substrate and the histogram data of each of the virtual substrates, determination data are created by quantifying a distance between the histogram data of the target substrate and the histogram data of the multiple virtual substrates, and the determination data are displayed on a display unit.
摘要翻译：提供了用于衬底的粒子分布分析的支持方法。在支持方法中，通过目标基板的粒子坐标数据，对经过粒子分布分析的目标基板上的所有粒子产生粒子间距离的直方图数据。此外，针对每个具有与目标衬底上的粒子相同数量的随机分布的粒子的多个虚拟衬底创建颗粒间距离的直方图数据。基于目标基板的直方图数据和每个虚拟基板的直方图数据之间的差异，通过量化目标基板的直方图数据与多个虚拟基板的直方图数据之间的距离来创建确定数据，以及确定数据显示在显示单元上。

8. 发明授权

US08409328B2 Substrate transfer device and substrate transfer method 有权
标题翻译：基板转印装置和基板转印方法
公开(公告)号：US08409328B2
公开(公告)日：2013-04-02
申请号：US12726598
申请日：2010-03-18
申请人： Jun Yamawaku , Junji Oikawa , Hiroyuki Nakayama
发明人： Jun Yamawaku , Junji Oikawa , Hiroyuki Nakayama
IPC分类号： B03C3/016
CPC分类号： H01L21/67781 , H01L21/67017
摘要： A substrate transfer device includes an atmosphere introduction unit and an atmosphere exhaust unit provided at a top and a bottom portion of a main body of the device, respectively; and a substrate transfer mechanism provided between the atmosphere introduction unit and the atmosphere exhaust unit. The substrate transfer device further includes a downward flow forming unit provided, adjacent to the atmosphere introduction unit, to allow an atmosphere to be introduced through the atmosphere introduction unit and to downwardly flow through the substrate transfer mechanism and be exhausted through the atmosphere exhaust unit; and a gas ionizing unit for ionizing the atmosphere and a particle collecting unit for collecting particles included in the atmosphere, the gas ionizing unit and the particle collecting unit being sequentially provided in the direction in which the atmosphere downwardly flows, between the downward flow forming unit and the substrate transfer mechanism.
摘要翻译：基板转印装置包括分别设置在装置的主体的顶部和底部的气氛引入单元和气体排出单元; 以及设置在大气引入单元和大气排气单元之间的基板输送机构。基板转印装置还包括与大气引入单元相邻设置的向下流动形成单元，以允许气氛通过大气引入单元引入并向下流过基板传送机构并通过大气排气单元排出; 和用于使气氛离子化的气体离子化单元和用于收集包含在大气中的颗粒的颗粒收集单元，气体离子化单元和颗粒收集单元沿着大气向下流动的方向依次设置在下流形成单元和基板转印机构。

9. 发明授权

US08398745B2 Substrate processing apparatus and exhaust method therefor 有权
标题翻译：基板处理装置及其排气方法
公开(公告)号：US08398745B2
公开(公告)日：2013-03-19
申请号：US12726612
申请日：2010-03-18
申请人： Jun Yamawaku , Junji Oikawa , Hiroyuki Nakayama
发明人： Jun Yamawaku , Junji Oikawa , Hiroyuki Nakayama
IPC分类号： B03C3/019 , B03C3/36
CPC分类号： H01L21/67017
摘要： A substrate processing apparatus includes a processing chamber for accommodating therein a processing target substrate; a gas exhaust path through which a gas inside the processing chamber is exhausted; one or more exhaust pumps provided in the gas exhaust path; and a scrubber for collecting harmful components from an exhaust gas. The apparatus further includes an ionized gas supply unit for supplying to the gas exhaust path an ionized gas for neutralizing charged particles included in the exhaust gas flowing therethrough.
摘要翻译：基板处理装置包括：处理室，用于在其中容纳加工对象基板; 气体排出通道，处理室内的气体通过该排气路径排出; 设置在排气通道中的一个或多个排气泵; 以及用于从废气中收集有害成分的洗涤器。该装置还包括电离气体供应单元，用于向气体排出通道供应用于中和包含在流过其中的废气中的带电粒子的电离气体。

10. 发明授权

US08337629B2 Method for cleaning elements in vacuum chamber and apparatus for processing substrates 有权
公开(公告)号：US08337629B2
公开(公告)日：2012-12-25
申请号：US13495404
申请日：2012-06-13
申请人： Tsuyoshi Moriya , Hiroshi Nagaike , Hiroyuki Nakayama
发明人： Tsuyoshi Moriya , Hiroshi Nagaike , Hiroyuki Nakayama
IPC分类号： B08B5/00 , B08B7/00
CPC分类号： H01L21/67028 , B08B3/12 , H01J37/32862 , H01L21/6831
摘要： To clean an element in a vacuum chamber by causing particles sticking to the element to scatter, the present invention uses a means for applying a voltage to the element and causing the particles to scatter by utilizing Maxwell's stress, a means for electrically charging the particles and causing the particles to scatter by utilizing the Coulomb force, a means for introducing a gas into the vacuum chamber and causing the particles sticking to the element to scatter by causing a gas shock wave to hit the element, a means for heating the element and causing the particles to scatter by utilizing the thermal stress and thermophoretic force, or a means for causing the particles to scatter by applying mechanical vibrations to the element. The thus scattered particles are removed by carrying them in a gas flow in a relatively high pressure atmosphere.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式