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1. 发明授权

US4685014A Production method of thin film magnetic head 失效
标题翻译：薄膜磁头的制作方法
公开(公告)号：US4685014A
公开(公告)日：1987-08-04
申请号：US403015
申请日：1982-07-29
申请人： Masanobu Hanazono , Shinichi Hara , Hirosi Akiyama , Masaaki Hayashi , Harunobu Saitoo , Takumi Kurisu
发明人： Masanobu Hanazono , Shinichi Hara , Hirosi Akiyama , Masaaki Hayashi , Harunobu Saitoo , Takumi Kurisu
IPC分类号： H01L21/31 , G11B5/31 , H01L21/302 , H01L21/3065 , G11B5/147
CPC分类号： G11B5/3163 , Y10T29/49044 , Y10T29/49064
摘要： In producing a magnetic head by thin film technique, a magnetic film is formed on an insulating member covering coil conductor films after the surface of the insulating member is flattened. After a flattening coating is formed on the insulating member, the flattening coating as well as the insulating member are etched by plasma-assisted etching technique in order to flatten the surface.
摘要翻译：在通过薄膜技术制造磁头时，在绝缘构件的表面变平后，在覆盖线圈导体膜的绝缘构件上形成磁性膜。在绝缘构件上形成平坦化的涂层之后，通过等离子体辅助蚀刻技术对平坦化涂层以及绝缘构件进行蚀刻，以使表面变平。

2. 发明授权

US4971896A Method for forming thin film pattern and method for fabricating thin film magnetic head using the same 失效
标题翻译：用于形成薄膜图案的方法和使用其制造薄膜磁头的方法
公开(公告)号：US4971896A
公开(公告)日：1990-11-20
申请号：US280828
申请日：1988-12-07
申请人： Takashi Kawabe , Ataru Kobayashi , Moriaki Fuyama , Makoto Morijiri , Eiji Ashida , Masatoshi Tsuchiya , Tetsuya Okai , Masanobu Hanazono , Shinichi Hara , Shinji Narishige , Hiroshi Ikeda
发明人： Takashi Kawabe , Ataru Kobayashi , Moriaki Fuyama , Makoto Morijiri , Eiji Ashida , Masatoshi Tsuchiya , Tetsuya Okai , Masanobu Hanazono , Shinichi Hara , Shinji Narishige , Hiroshi Ikeda
IPC分类号： G03F7/00 , G11B5/31
CPC分类号： G11B5/3163 , G03F7/0035 , Y10S430/165
摘要： A method of forming a thin film pattern on a base having a step portion. This method comprises a first step of forming a thin film of given material on the base, a second step of forming a predetermined pattern of a first photoresist film on said thin film at one of a first portion including a lower part of the step portion and a second portion including an upper part of the step portion, a third step of forming a predetermined pattern of a second photoresist film on said thin film at the other of the first and second portions and a fourth step of applying ion-milling to said thin film of given material using masks said first and second photoresist film patterns formed on said thin film at the first and second portions.
摘要翻译：在具有台阶部的基底上形成薄膜图案的方法。该方法包括在基底上形成给定材料的薄膜的第一步骤，第二步骤，在包括台阶部分的下部的第一部分中的一个上形成在所述薄膜上的第一光致抗蚀剂膜的预定图案，以及第二部分，包括台阶部分的上部;第三步骤，在所述第一和第二部分中的另一个上在所述薄膜上形成第二光致抗蚀剂膜的预定图案;以及第四步骤，将所述薄片给定材料的膜使用掩模，所述第一和第二部分形成在所述薄膜上形成的第一和第二光致抗蚀剂图案。

3. 发明授权

US4592801A Method of patterning thin film 失效
标题翻译：薄膜图案方法
公开(公告)号：US4592801A
公开(公告)日：1986-06-03
申请号：US639012
申请日：1984-08-09
申请人： Shinichi Hara , Shinji Narishige , Tsuneo Yoshinari , Mistuo Sato , Katsuya Mitsuoka , Makoto Morijiri , Masanobu Hanazono , Tetsuo Kobayashi
发明人： Shinichi Hara , Shinji Narishige , Tsuneo Yoshinari , Mistuo Sato , Katsuya Mitsuoka , Makoto Morijiri , Masanobu Hanazono , Tetsuo Kobayashi
IPC分类号： G11B5/31 , H01L21/302 , H01L21/3065 , H01L21/311 , B44C1/22 , C03C15/00 , C03C25/06 , C23F1/02
CPC分类号： H01L21/31116 , H01L21/302 , G11B5/3116 , G11B5/3163
摘要： A method of patterning a thin film by dry etching is disclosed in which, in order for a thin alumina film to have a predetermined pattern, the thin alumina film is selectively removed by carrying out the ion beam etching which uses a carbon fluoride gas, while using a photoresist film as a mask.
摘要翻译：公开了一种通过干蚀刻图案化薄膜的方法，其中为了使氧化铝薄膜具有预定图案，通过进行使用氟化碳气体的离子束蚀刻来选择性地除去薄氧化铝膜，同时使用光致抗蚀剂膜作为掩模。

4. 发明授权

US4623439A Thin film of Ni-Co-Fe ternary alloy and process for producing the same 失效
标题翻译： Ni-Co-Fe三元合金薄膜及其制备方法
公开(公告)号：US4623439A
公开(公告)日：1986-11-18
申请号：US658161
申请日：1984-10-05
申请人： Katsuya Mitsuoka , Shinji Narishige , Akira Kumagai , Masaaki Sano , Shinichi Hara , Masanobu Hanazono
发明人： Katsuya Mitsuoka , Shinji Narishige , Akira Kumagai , Masaaki Sano , Shinichi Hara , Masanobu Hanazono
IPC分类号： C22C19/00 , C23C14/14 , C23C14/24 , G11B5/31 , H01F10/16 , H01F41/14 , C23C14/00
CPC分类号： C23C14/24 , C23C14/14 , H01F41/14
摘要： A magnetic thin film of Ni-Co-Fe ternary alloy containing at most 75% by weight of Ni, 10 to 90% by weight of Co, and at most 15% by weight of Fe, which shows the magnetostriction constant between +2.times.10.sup.-6 to -2.times.10.sup.-6 and shows a uniaxial magnetic anisotropy of at most 10 Oe.The film is formed through the vacuum evaporation of the alloy during which two orthogonal external magnetic fields, directions x and y, are alternately applied over the deposition surface of a substrate.The film is suitable for a core material of a thin film magnetic head with a higher recording density.
摘要翻译： Ni-Co-Fe三元合金的磁性薄膜含有至多75重量％的Ni，10至90重量％的Co和至多15重量％的Fe，其显示出±2×10 -3摩尔的磁致伸缩常数， 6〜-2×10 -6，显示出至多10Oe的单轴磁各向异性。通过合金的真空蒸发形成膜，在该过程中两个正交的外部磁场方向x和y交替施加在基板的沉积表面上。该膜适用于具有较高记录密度的薄膜磁头的芯材。

5. 发明授权

US5229621A Magnetic semiconductor element and a magneto-optical read out head 失效
标题翻译：磁性半导体元件和磁光读出头
公开(公告)号：US5229621A
公开(公告)日：1993-07-20
申请号：US888422
申请日：1992-05-26
申请人： Matahiro Komuro , Yuzo Kozono , Masanobu Hanazono
发明人： Matahiro Komuro , Yuzo Kozono , Masanobu Hanazono
IPC分类号： H01L27/22
CPC分类号： H01S5/0607 , B82Y20/00 , G11B11/10543 , H01S2301/173 , H01S5/34313
摘要： A magnetic semiconductor element formed by joining a magnetostrictive material and a semiconductive material with each other, in which the lattice constant of the semiconductive material is variable by magnetostriction at the interface therebetween; or in which an interface between the two materials is formed by epitaxial growth and the orientation of the magnetostriction is identical to the orientation in which the lattice constant of the semiconductive material varies. Next, a semiconductor laser is so constructed that the interface between the magnetostrictive material and the semiconductive material is disposed in the semiconductor laser and the wavelength and the output of the semiconductor laser are variable by magnetostriction. Further, a method of making a magnetic semiconductor element comprises a step of epitaxially growing the layer of the magnetostrictive material on the layer made of the semiconductive material. Furthermore, a magneto-optical read out head is so constructed that the interface formed by joining the magnetostrictive material and the semiconductive material with each other is disposed in the semiconductor laser constituting a head reading out information recorded in a magnetic recording medium.
摘要翻译：通过将磁致伸缩材料和半导体材料彼此接合而形成的磁性半导体元件，其中半导体材料的晶格常数可通过它们之间的界面处的磁致伸缩而变化; 或者其中通过外延生长形成两种材料之间的界面，并且磁致伸缩的取向与半导体材料的晶格常数变化的取向相同。接下来，半导体激光器被构造成使得磁致伸缩材料和半导体材料之间的界面设置在半导体激光器中，半导体激光器的波长和输出通过磁致伸缩而变化。此外，制造磁性半导体元件的方法包括在由半导体材料制成的层上外延生长磁致伸缩材料层的步骤。此外，磁光读出头被构造成使得通过将磁致伸缩材料和半导体材料彼此接合而形成的界面设置在半导体激光器中，该半导体激光器构成磁头读出记录在磁记录介质中的信息。

6. 发明授权

US4939610A Thin film magnetic head having magnetic core including a thin film of cobalt alloy 失效
标题翻译：具有包括钴合金薄膜的磁芯的薄膜磁头
公开(公告)号：US4939610A
公开(公告)日：1990-07-03
申请号：US252603
申请日：1988-10-03
申请人： Shinji Narishige , Masaaki Sano , Kouichi Nishioka , Takao Imagawa , Masanobu Hanazono , Tetsuo Kobayashi , Toshihiro Yoshida
发明人： Shinji Narishige , Masaaki Sano , Kouichi Nishioka , Takao Imagawa , Masanobu Hanazono , Tetsuo Kobayashi , Toshihiro Yoshida
IPC分类号： G11B5/31 , H01F41/18
CPC分类号： H01F41/18 , G11B5/31
摘要： A thin film magnetic head is disclosed which includes a substrate, a first magnetic core disposed on the substrate, a second magnetic core forming a magnetic path in conjunction with the first magnetic core, a conductor coil wound in the magnetic path and a gap formed between ends of the first magnetic core and the second magnetic core. At least one of the first magnetic core and the second magnetic core includes a thin film of a cobalt alloy. The cobalt alloy includes 20-70 atomic percent of cobalt, 20-60 atomic percent of nickel, 12-30 atomic percent of iron and 5-32 atomic percent of palladium.
摘要翻译：公开了一种薄膜磁头，其包括基板，设置在基板上的第一磁芯，与第一磁芯一起形成磁路的第二磁芯，缠绕在磁路中的导体线圈和形成在磁路之间的间隙第一磁芯和第二磁芯的端部。第一磁芯和第二磁芯中的至少一个包括钴合金薄膜。钴合金包括20-70原子％的钴，20-60原子％的镍，12-30原子％的铁和5-32原子百分比的钯。

7. 发明授权

US4044394A Thin film magnetic head with a center tap 失效
标题翻译：薄膜磁头与中心水龙头
公开(公告)号：US4044394A
公开(公告)日：1977-08-23
申请号：US673523
申请日：1976-04-05
申请人： Masanobu Hanazono , Osamu Asai , Kunio Ono
发明人： Masanobu Hanazono , Osamu Asai , Kunio Ono
IPC分类号： G11B5/17 , G11B5/31 , G11B5/20 , G11B5/28
CPC分类号： G11B5/313 , G11B5/3163
摘要： A narrow track width magnetic head can be formed using an integrated circuit formation techniques such as evaporation plating, chemical etching, etc. But, there has been such a problem that it is difficult to provide a center tap in a conventional thin film magnetic head structure including coils of four or more turns. A magnetic head according to the present invention comprising a coil divided into two sections by the center tap, the electrostatic capacitance of each section being substantially the same. The coil may be formed into a precise pattern with ease by photoetching technique. A plurality of sets of conductive films insulated from one another are provided crossing a magnetic core, each set consisting of two conductive films of the same pattern. The alternating layers of the conductive films are connected on the backward of a magnetic gap to provide the two sections of the coil. A center tap is derived from a connection portion of the two sections of the coil and a coil terminal is provided at each of the opposite free ends of the coil. Thus, the thin film magnetic head having a multi-turn coil with a center tap is provided.
摘要翻译：可以使用诸如蒸发镀，化学蚀刻等的集成电路形成技术来形成窄轨道宽度的磁头。但是，存在这样的问题，即难以在传统的薄膜磁头结构中提供中心抽头包括四圈或更多匝的线圈。根据本发明的磁头包括通过中心抽头分成两部分的线圈，每个部分的静电电容基本上相同。线圈可以通过光刻技术容易地形成精确的图案。跨越磁芯设置多个彼此绝缘的导电膜组，每组由相同图案的两个导电膜组成。导电膜的交替层在磁隙的后方连接以提供线圈的两个部分。中心抽头来自线圈的两个部分的连接部分，线圈端子设置在线圈的相对的自由端中的每一个处。因此，提供具有中心抽头的多匝线圈的薄膜磁头。

8. 发明授权

US4003772A Method for preparing thin film integrated circuit 失效
标题翻译：制备薄膜集成电路的方法
公开(公告)号：US4003772A
公开(公告)日：1977-01-18
申请号：US550366
申请日：1975-02-18
申请人： Masanobu Hanazono , Osamu Asai
发明人： Masanobu Hanazono , Osamu Asai
IPC分类号： C09K13/04 , C01F7/02 , C04B41/91 , C23F1/20 , H01L21/308 , H01L21/316 , H01L21/768 , H05K3/46 , H01L21/441
CPC分类号： H01L21/31687 , H01L21/76888
摘要： A thin film integrated circuit consists of a first conductor of aluminum extended in any desired direction on an insulating substrate, an anodized film formed by anodization in a chromic acid solution at positions other than cross-connectional parts on the first conductor, a second conductor cross-connected on the first conductor, and an anodized film formed by anodization in a chromic acid solution on the surface of the second conductor. The thin film integrated circuit is prepared by partially forming an anodized film in a sulfuric acid or oxalic acid solution at cross-connectional parts of a first conductor of aluminum so as not to form any anodized film in a chromic acid solution at the cross-sectional parts of the first conductor of the circuit, masking the partially formed anodized film with a photoresist film, then forming an anodized film by a chromic acid solution, and then removing the photoresist film and the anodized film. After the cross-sectional parts of the first conductor are exposed thereby, a second conductor is formed. For an etching solution for anodized film, which is anodized using the sulfuric acid or oxalic acid solution, a mixed solution consisting of 60 to 40 g/l of chromic acid and 40 to 300 g/l of oxidative acid is used.
摘要翻译：薄膜集成电路包括在绝缘基板上以任何所需方向延伸的铝的第一导体，通过在铬酸溶液中阳极氧化形成的阳极氧化膜，所述阳极氧化膜在第一导体上的交叉连接部分以外的位置处形成，第二导体十字连接在第一导体上，以及通过在第二导体的表面上的铬酸溶液中阳极氧化形成的阳极氧化膜。薄膜集成电路通过在第一铝导体的交叉连接部分部分地形成硫酸或草酸溶液中的阳极氧化膜来制备，以便不在铬酸溶液中在横截面处形成任何阳极氧化膜电路的第一导体的部分，用光致抗蚀剂膜掩蔽部分形成的阳极氧化膜，然后通过铬酸溶液形成阳极氧化膜，然后除去光致抗蚀剂膜和阳极氧化膜。在第一导体的横截面部分被暴露之后，形成第二导体。对于使用硫酸或草酸溶液阳极氧化的阳极氧化膜的蚀刻溶液，使用由60〜40g / l的铬酸和40〜300g / l的氧化酸组成的混合溶液。

9. 发明授权

US3968019A Method of manufacturing low power loss semiconductor device 失效
标题翻译：制造低功耗半导体器件的方法
公开(公告)号：US3968019A
公开(公告)日：1976-07-06
申请号：US560880
申请日：1975-03-21
申请人： Masanobu Hanazono , Osamu Asai , Moriaki Fuyama , Masao Iimura , Hideyuki Yagi , Masahiro Okamura
发明人： Masanobu Hanazono , Osamu Asai , Moriaki Fuyama , Masao Iimura , Hideyuki Yagi , Masahiro Okamura
IPC分类号： H01L29/872 , H01L21/00 , H01L21/263 , H01L29/00 , H01L29/47 , C23C15/00 , H01L29/48
CPC分类号： H01L21/00 , H01L21/2633 , H01L29/00
摘要： By forming a metallic coating on a sufficiently cleaned semiconductor substrate through ion plating, a low power loss and high switching speed semiconductor device is obtained which differs from an ordinary semiconductor device with a diffused junction. In an interface between the metallic coating and the semiconductor substrate, a considerably thin metal-injected layer is formed toward the semiconductor substrate. Schottky barrier devices may be formed by the method of the invention.
摘要翻译：通过在充分清洁的半导体衬底上通过离子电镀形成金属涂层，获得了与具有扩散结的普通半导体器件不同的低功率损耗和高开关速度的半导体器件。在金属涂层和半导体衬底之间的界面中，向半导体衬底形成相当薄的金属注入层。肖特基势垒器件可以通过本发明的方法形成。

10. 发明授权

US5728481A Spin interaction device 失效
标题翻译：自旋交互设备
公开(公告)号：US5728481A
公开(公告)日：1998-03-17
申请号：US467317
申请日：1995-06-06
申请人： Masahiro Kasai , Yuzo Kozono , Yoko Kanke , Toshiyuki Ohno , Masanobu Hanazono
发明人： Masahiro Kasai , Yuzo Kozono , Yoko Kanke , Toshiyuki Ohno , Masanobu Hanazono
IPC分类号： G01H3/00 , G01R29/08 , G01R33/035 , G01R33/06 , G01R33/09 , G11B5/127 , H01F10/32 , H01L39/22 , H01L43/08 , G11B5/66
CPC分类号： B82Y25/00 , G01R33/093 , H01F10/3213 , Y10S428/90 , Y10T428/1121
摘要： A magnetic detecting device is constructed of a substrate, a first magnetic layer formed on the substrate, a first magnetic layer formed on the substrate, an intermediate layer containing an atom indicative of weak spincoupling and formed on the first magnetic film, and a second magnetic layer formed on the intermediate layer. The magnetic detecting device further comprises a unit or supplying a current through the first and second magnetic layers, and a unit for detecting a voltage generated between the first magnetic layer and the second magnetic layer while the current is supplied thereto.
摘要翻译：磁性检测装置由基板，形成在基板上的第一磁性层，形成在基板上的第一磁性层，含有指示弱自旋耦合并形成在第一磁性膜上的原子的中间层构成，第二磁性层层形成在中间层上。磁检测装置还包括一个单元或者提供通过第一和第二磁性层的电流，以及用于检测在向其提供电流时在第一磁性层和第二磁性层之间产生的电压的单元。

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